Datasheet IXTQ50N20P Specification

PolarHT

TM

Power MOSFET

IXTA50N20P IXTP50N20P IXTQ50N20P

N-Channel Enhancement Mode Avalanche Rated

Symbol Test Conditions Maximum Ratings

V

DSS

V

DGR

V

GSS

V

GSM

I

D25

I

DM

I

A

E

AS

dV/dt IS≤ IDM, VDD ≤ V

P

D

T

J

T

JM

T

stg

T

L

T

SOLD

M

d

Weight TO-263 2.5 g

TJ= 25°C to 175°C 200 V

TJ= 25°C to 175°C, RGS = 1MΩ 200 V

Continuous ±20 V

Transient ±30 V

TC= 25°C 50A

TC= 25°C, pulse width limited by T

TC= 25°C 50A

TC= 25°C1J

, TJ ≤ 175°C 10 V/ns

DSS

TC= 25°C 360 W

1.6mm (0.062 in.) from case for 10s 300 °C Plastic body for 10s 260 °C

Mounting torque (TO-3P,TO-220) 1.13/10 Nm/lb.in.

TO-220 3.0 g TO-3P 5.5 g

JM

- 55 ... +175 °C

120 A

175 °C

V

DSS

I

D25

R

DS(on)

TO-263 (IXTA)

TO-220 (IXTP)

TO-3P (IXTQ)

G

G = Gate D = Drain S = Source TAB = Drain

= 200V = 50A

≤≤

≤ 60m

≤≤

G

D

S

G

S

ΩΩ

Ω

ΩΩ

(TAB)

Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max.

BV

DSS

V

GS(th)

I

GSS

I

DSS

R

DS(on)

VGS= 0V, ID = 250μA 200 V

VDS= VGS, ID = 250μA 2.5 5.0 V

VGS= ±20V, VDS = 0V ±100 nA

VDS= V VGS= 0V TJ = 150°C 250 μA

VGS= 10V, ID = 0.5 • I

DSS

, Note 1 60 mΩ

D25

25 μA

Features

• International standard packages

• Unclamped Inductive Switching (UIS)

rated

• Low package inductance

- easy to drive and to protect

Advantages

• Easy to mount

• Space savings

• High power density

DS99156F(07/08)

IXTA50N20P IXTP50N20P

IXTQ50N20P

Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max.

g

C

t

d(on)

t

r

t

d(off)

t

f

Q

R

fs

iss

oss

rss

g(on)

gs

gd

thJC

thCS

VDS = 10V, ID = 0.5 • I

, Note 1 12 23 S

D25

2720 pF

VGS = 0V, VDS = 25V, f = 1MHz 490 pF

105 pF

Resistive Switching Times

26 ns

35 ns

= 10V, VDS = 0.5 • V

V

GS

RG = 10Ω (External)

, ID = 0.5 • I

DSS

D25

70 ns

30 ns

70 nC

VGS = 10V, VDS = 0.5 • V

, ID = 0.5 • I

DSS

D25

17 nC

37 nC

0.42 °C/W

(TO-3P) 0.21 °C/W

(TO-220) 0.25 °C/W

Source-Drain Diode

TO-3P (IXTQ) Outline

Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max.

I

S

I

SM

V

SD

t

rr

Q

RM

VGS = 0V 50 A

Repetitive, pulse width limited by T

JM

120 A

IF = 50A, VGS = 0V, Note 1 1.5 V

IF = 25A, -di/dt = 100A/μs V

= 100V, VGS = 0V

R

150 ns

2.0 μC

Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.

TO-263 (IXTA) Outline

TO-220 (IXTP) Outline

Pins: 1 - Gate 2 - Drain

3 - Source 4 - Drain

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Fig. 1. Output Characteristics

V

@ 25

C

º

50 45 40 35 30 25

- Ampere s

20

D

I

15 10

5 0

0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6

V

D S

GS

= 10V

- Vol ts

9V

8V

7V

6V

IXTA50N20P IXTP50N20P

IXTQ50N20P

Fig. 2. Exte nded Output Characteri stics

@ 25

C

º

100

V

= 10V

90 80 70 60 50 40

- Ampe res

D

I

30 20 10

0

GS

9V

8V

7V

6V

02468101214161820

V

- Vol t s

D S

Fig. 3. Output Chara cteri stics

@ 150

50

V

45 40 35 30 25

- Amperes

20

D

I

15 10

5 0

012345678

GS

9V

V

Fig. 5. R

Normalized to ID = 25A Value

DS(on)

D S

C

º

= 10V

- Vol ts

8V

7V

6V

5V

vs. Drain Current

4.2

- No rmalized

D S ( o n )

R

3.8

3.4

2.6

2.2

1.8

1.4

0.6

V

= 10V

GS

3

1

0 102030405060708090100

TJ = 175ºC

TJ = 125ºC

TJ = 25ºC

I D - Am pere s

Fig. 4. R

Normalized to ID = 25A

)

DS(on

vs. Junction Temperature

3.2

- No rmalized

D S ( o n )

R

3.0

2.8

2.6

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

V

= 10V

GS

I

= 50A

D

-50 -25 0 25 50 75 100 125 150 175

T

- Degrees Cent i grade

J

Fi g . 6. Drain Cu r r en t vs. Case

Temperature

55 50 45 40 35 30 25

- Ampe res

D

20

I

15 10

5 0

-50 -25 0 25 50 75 100 125 150 175

T

- Degrees Centigrade

C

I

D

= 25A

alue

IXTA50N20P IXTP50N20P

IXTQ50N20P

Fig. 7. I nput Admi ttance

90 80 70 60 50 40

- Amperes

D

I

30 20 10

0

45678910

TJ = 150ºC

25ºC

- 40ºC

V

G S

- Vol ts

Fig. 9. S ource Curre nt vs.

Source-T o -Dr ain V o ltag e

150

125

100

75

- Amperes

S

I

50

25

0

0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5

T

= 150º C

J

V

S D

T

- Vol ts

= 25ºC

J

Fig. 8. Transconductance

36 32 28 24 20 16

- Siemens

f s

12

g

8 4 0

0 102030405060708090100110120

TJ = - 40ºC

25ºC

150ºC

I

- Am pere s

D

Fig. 10. Gate Charge

10

9

V

= 100V

DS

8

I

= 25A

D

7

I

= 10mA

G

6 5

- Volts

G S

4

V

3 2 1 0

0 10203040506070

Q G - nanoCoulombs

Fig. 11. Capacita nce

10000

C

1000

100

Capacitance - picoFarads

f = 1MHz

10

0 5 10 15 20 25 30 35 40

V

- Volts

D S

iss

C

oss

C

rss

IXYS reserves the right to change limits, test conditions, and dimensions.

Fig. 12. Forwa rd-Bia s

Safe Operating Area

1000

T

J

R

100

- Amp eres

D

I

10

1

10 100 1000

DS(ON)

Limit

DC

V

D S

- Vol ts

T

C

Single Pulse

25µs

100µs

1ms

10ms

= 175ºC

= 25ºC

C / W

º

-

IXTA50N20P IXTP50N20P

IXTQ50N20P

Fig. 13. M aximum Transient Thermal Impe dance

1.00

0.10

( t h ) J C

Z

0.01

0.1 1 10 100 1000

Pulse Width - milliseconds

IXYS REF: T_50N20P(5S)7-31-08-F