Page 1
Advance Technical Information
PolarP2
TM
IXTQ470P2
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
dv/dt IS≤ IDM, VDD ≤ V
PD TC= 25°C 830 W
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight 5.5 g
TJ= 25°C to 150°C 500 V
TJ= 25°C to 150°C, RGS = 1MΩ 500 V
Continuous ± 30 V
Transient ± 40 V
TC= 25°C42A
TC= 25°C, Pulse Width Limited by T
JM
126 A
TC= 25°C42A
TC= 25°C 1.3 J
≤ 150°C 10 V/ns
DSS,TJ
-55 ... +150 °C
150 °C
-55 ... +150 °C
Maximum Lead Temperature for Soldering 300 °C
Plastic Body for 10s 260 °C
Mounting Torque 1.13/10 Nm/lb.in.
V
DSS
I
D25
R
DS(on)
t
rr(typ)
= 500V
= 42A
≤≤
≤ 145m
≤≤
= 400ns
TO-3P
G
D
S
Tab
G = Gate D = Drain
S = Source Tab = Drain
Features
z
Avalanche Rated
z
Fast Intrinsic Diode
z
Dynamic dv/dt Rated
z
Low Package Inductance
Advantages
z
High Power Density
z
Easy to Mount
z
Space Savings
ΩΩ
Ω
ΩΩ
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BV
V
I
GSS
I
DSS
DSS
GS(th)
VGS= 0V, ID = 250μA 500 V
VDS= VGS, ID = 250μA 2.5 4.5 V
VGS= ± 30V, VDS = 0V ± 100 nA
VDS= V
, VGS= 0V 5 μA
DSS
TJ = 125°C 50 μA
R
DS(on)
© 2010 IXYS CORPORATION, All Rights Reserved
VGS= 10V, ID = 0.5 • I
, Note 1 145 mΩ
D25
Applications
z
Switch-Mode and Resonant-Mode
Power Supplies
z
DC-DC Converters
z
Laser Drivers
z
AC and DC Motor Drives
z
Robotics and Servo Controls
DS100248(03/10)
Page 2
IXTQ470P2
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCS
VDS= 20V, ID = 0.5 • I
, Note 1 23 36 S
D25
5400 pF
VGS = 0V, VDS = 25V, f = 1MHz 545 pF
44 pF
Resistive Switching Times
= 10V, VDS = 0.5 • V
V
GS
DSS
RG = 3Ω (External)
12 ns
, ID = 0.5 • I
42 ns
D25
9 ns
23 ns
88 nC
VGS= 10V, VDS = 0.5 • V
, ID = 0.5 • I
DSS
D25
30 nC
31 nC
0.15 °C/W
0.25 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
TO-3P (IXTQ) Outline
Pins: 1 - Gate 2 - Drain
3 - Source 4 - Drain
I
S
I
SM
V
SD
t
rr
VGS = 0V 42 A
Repetitive, Pulse Width Limited by T
JM
168 A
IF = IS, VGS = 0V, Note 1 1.5 V
I
= 21A, -di/dt = 100A/μs
F
400 ns
VR = 100V, VGS = 0V
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Loading...