Page 1
PolarHV
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTQ 44N50P
V
DSS
I
D25
R
DS(on)
= 500 V
= 44 A
≤≤
≤ 140 m
≤≤
ΩΩ
Ω
ΩΩ
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt I
TJ= 25° C to 150° C 500 V
TJ= 25° C to 150° C; RGS = 1 MΩ 500 V
Continuous ±30 V
Transient ±40 V
TC= 25° C44A
TC= 25° C, pulse width limited by T
JM
110 A
TC= 25° C44A
TC= 25° C55mJ
TC= 25° C 1.7 J
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
S
, 10 V/ns
DSS
TO-3P (IXTQ)
G
TJ≤ 150° C, RG = 10 Ω
P
T
T
T
T
T
M
D
J
JM
stg
L
SOLD
d
TC= 25° C 650 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
1.6 mm (0.062 in.) from case for 10 s 300 °C
Plastic body for 10 s 260 °C
Mounting torque(TO-247) 1.13/10 Nm/lb.in.
Features
l
International standard packages
l
Unclamped Inductive Switching (UIS)
rated
l
Low package inductance
- easy to drive and to protect
Weight 6g
D
S
G = Gate D = Drain
S = Source TAB = Drain
(TAB)
Symbol Test Conditions Characteristic Values
(TJ = 25° C, unless otherwise specified) Min. Typ. Max.
BV
V
I
GSS
I
DSS
DSS
GS(th)
VGS= 0 V, ID = 250µA 500 V
VDS= VGS, ID = 250µA 3.0 5.0 V
VGS= ±30 VDC, VDS = 0 ±10 nA
VDS= V
DSS
25 µA
VGS= 0 V TJ = 125° C 250 µA
R
DS(on)
VGS= 10 V, ID = 0.5 I
D25
140 mΩ
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 2006 IXYS All rights reserved
Advantages
l
Easy to mount
l
Space savings
l
High power density
DS99372E(03/06)
Page 2
IXTQ 44N50P
Symbol Test Conditions Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min. Typ. Max.
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCS
VDS= 20 V; ID = 0.5 I
, pulse test 20 32 S
D25
5440 pF
VGS = 0 V, VDS = 25 V, f = 1 MHz 639 pF
40 pF
25 ns
VGS = 10 V, VDS = 0.5 V
DSS
, ID = I
D25
27 ns
RG = 3 Ω (External) 75 ns
21 ns
98 nC
VGS= 10 V, VDS = 0.5 V
, ID = 0.5 I
DSS
D25
35 nC
30 nC
0.19° C/W
(TO-3P) 0.21 ° C/W
Source-Drain Diode Characteristic Values
(T
Symbol Test Conditions Min. Typ. Max.
= 25° C, unless otherwise specified)
J
TO-3P (IXTQ) Outline
I
S
I
SM
V
SD
VGS = 0 V 44 A
Repetitive 110 A
IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
t
rr
IF = 22 A 400 ns
-di/dt = 100 A/µs
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
Page 3
IXTQ 44N50P
Fig. 1. Output Characteristics
@ 25ºC
45
40
35
30
25
20
- Amperes
D
I
15
10
5
0
01234567
VDS - Volts
V
= 10V
GS
7V
6V
5V
Fig. 3. Output Characteristics
@ 125ºC
- Amperes
I
45
40
35
30
25
20
D
15
10
5
V
= 10V
GS
7V
6V
5V
Fig. 2. Extended Output Characteristics
@ 25ºC
100
V
= 10V
GS
90
80
70
60
50
- Amperes
40
D
I
30
20
10
0
0 3 6 9 12 15 18 21 24 27 30
8V
7V
6V
5V
VDS - Volts
Fig. 4. R
Normalized to ID = 22A Value
DS(on)
vs. Junction Temperature
3.2
V
= 10V
GS
2.8
2.4
- Normaliz ed
DS(on)
R
2
1.6
1.2
0.8
I D = 44A
I D = 22A
0
0 2 4 6 8 10 12 14 16
Fig. 5. R
Norm a lized to ID = 22A Value
DS(on)
vs. Drain Current
3.2
3.0
V
= 10V
GS
2.8
2.6
2.4
2.2
2.0
- Normalized
1.8
1.6
DS(on)
R
1.4
1.2
1.0
0.8
0 1020 30405060708090100
ID - Am pere s
© 2006 IXYS All rights reserved
VDS - Volts
TJ = 125ºC
TJ = 25ºC
0.4
-50 -25 0 25 50 75 100 125 150
TJ - Degrees Centigrade
Fig. 6. Maximum Drain Current vs.
Case Temperature
50
45
40
35
30
25
- Amperes
20
D
I
15
10
5
0
-50 -25 0 25 50 75 100 125 150
TC - Degrees Centigrade
Page 4
IXTQ 44N50P
Fig. 7. Input Admittance
65
60
55
50
45
40
35
30
- Amperes
D
25
I
20
15
10
5
0
3.544.555.566.5
T
= 125ºC
J
25ºC
- 40ºC
VGS - Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
140
120
100
80
T
= 125ºC
J
60
- Amperes
S
I
40
20
0
0.4 0.5 0.6 0.7 0.8 0.9 1 1 .1 1 .2
TJ = 25ºC
VSD - Volts
Fig. 8. Transconductance
60
55
50
45
T
= - 40ºC
J
40
25ºC
35
125 ºC
30
- Siemens
25
f s
g
20
15
10
5
0
0 10203040506070
ID - Am pere s
Fig. 10. Gate Charge
10
V
= 250V
DS
9
8
7
6
5
- Volts
GS
V
4
3
2
1
0
I
= 22A
D
I
= 10 mA
G
0 1020 3040506070 8090100
QG - NanoC oulom bs
Fig. 11. Capacitance
10,000
C
iss
1,000
C
oss
100
Capacitance - PicoFarads
C
f = 1 MHz
10
0 5 10 15 20 25 30 35 40
rss
VDS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
Fig. 12. Forward-Bias Safe Operating Area
1,000
TJ = 150ºC
T
R
Limit
DS(on)
100
- Amperes
D
I
10
DC
1
10 100 1000
VDS - Vo lts
= 25ºC
C
25µs
100µs
1ms
10ms
Page 5
IXTQ 44N50P
Fig. 13. Maximum Transient Thermal Resistance
1.00
0.10
- ºC / W
(th)JC
R
0.01
0.0001 0.001 0.01 0.1 1 10
Puls e W idth - Se conds
© 2006 IXYS All rights reserved
IXYS REF: T_44N50P (8J) 03-21-06-B.xls
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