Page 1
PolarHT
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTQ 200N06P
V
I
D25
R
DSS
DS(on)
=60V
= 200 A
≤≤
≤ 6.0 m
≤≤
ΩΩ
Ω
ΩΩ
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
D(RMS)
I
DM
I
AR
E
AR
E
AS
dv/dt I
TJ= 25° C to 175° C60V
TJ= 25° C to 175° C; RGS = 1 MΩ 60 V
Transient ±30 V
Continuous ±20 V
TC= 25° C 200 A
External lead current limit 75 A
TC= 25° C, pulse width limited by T
JM
400 A
TC= 25° C60A
TC= 25° C80mJ
TC= 25° C 4.0 J
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
S
, 10 V/ns
DSS
TJ≤ 150° C, RG = 4 Ω
P
T
T
T
T
T
M
D
J
JM
stg
L
SOLD
d
TC= 25° C 714 W
-55 ... +175 °C
175 °C
-55 ... +150 °C
1.6 mm (0.062 in.) from case for 10 s 300 ° C
Plastic body for 10 s 260 ° C
Mounting torque (TO-3P) 1.13/10 Nm/lb.in.
Weight TO-3P 5.5 g
TO-3P (IXTQ)
G
D
S
G = Gate D = Drain
S = Source TAB = Drain
(TAB)
Features
l
International standard package
l
Unclamped Inductive Switching (UIS)
rated
l
Low package inductance
- easy to drive and to protect
Advantages
Symbol Test Conditions Characteristic Values
(TJ = 25° C, unless otherwise specified) Min. Typ. Max.
BV
V
I
GSS
I
DSS
DSS
GS(th)
VGS= 0 V, ID = 250 µA60V
VDS= VGS, ID = 250µA 2.5 5.0 V
VGS= ±20 VDC, VDS = 0 ±100 nA
VDS= V
DSS
25 µA
VGS= 0 V TJ = 150° C 250 µA
R
DS(on)
VGS= 10 V, ID = 60A 6.0 m Ω
V
= 15 V, ID = 400A 5.0 m Ω
GS
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 2006 IXYS All rights reserved
l
Easy to mount
l
Space savings
l
High power density
DS99273E(12/05)
Page 2
IXTQ 200N06P
Symbol Test Conditions Characteristic Values
= 25° C, unless otherwise specified)
J
Min. Typ. Max.
5400 pF
1360 pF
35 ns
40 ns
200 nC
D25
37 nC
110 nC
0.21° C/W
0.21 ° C/W
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCS
(T
VDS= 10 V; ID = 60A, pulse test 45 65 S
VGS = 0 V, VDS = 25 V, f = 1 MHz 3550 pF
VGS = 10 V, VDS = 0.5 V
, ID = 60 A 60 ns
DSS
RG = 3.3 Ω (External) 90 ns
VGS= 10 V, VDS = 0.5 V
, ID = 0.5 I
DSS
Source-Drain Diode Characteristic Values
(T
Symbol Test Conditions Min. Typ. Max.
= 25° C, unless otherwise specified)
J
TO-3P (IXTQ) Outline
I
S
I
SM
V
SD
VGS = 0 V 200 A
Repetitive 400 A
IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
t
rr
Q
RM
IF = 25 A, -di/dt = 100 A/µs90ns
VR = 30 V, VGS = 0 V 1.0 µC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
Page 3
IXTQ 200N06P
d
d
Fig. 1. Output Char acteristics
º
C
@ 25
200
175
150
125
100
- Amperes
D
75
I
50
25
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4
V
GS
9V
8V
V
- Volts
D S
= 10V
7V
6V
5V
Fig. 3. Output Character istics
º
= 10V
C
8V
200
175
150
@ 150
V
GS
9V
Fig. 2. Exte nded Output Character istics
º
C
@ 25
350
V
= 10V
GS
300
250
200
150
- Amperes
D
I
100
50
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Fig . 4. R
V
D S
Norm alize d to 0.5 I
DS(on
)
9V
8V
7V
6V
5V
- Volts
Value vs . Junction Te m pe r atur e
2.2
VGS = 10V
2
1.8
D25
125
100
- Amperes
D
75
I
50
25
0
0 0.4 0.8 1.2 1.6 2 2.4 2.8
Fig . 5. R
V
- Volts
D S
Norm alize d to 0.5 I
DS(on)
7V
6V
5V
Value vs . Drain Cur r e nt
2.4
2.2
2
1.8
1.6
- Normalize
1.4
VGS = 15V
1.2
D S ( o n )
R
1
0.8
0.6
0 50 100 150 200 250 300 350
TJ = 175ºC
VGS = 10V
I D - Amperes
D25
TJ = 25ºC
1.6
1.4
- Normalize
1.2
D S ( o n )
1
R
0.8
0.6
-50 -25 0 25 50 75 100 125 150 175
T
J
I
= 200A
D
ID = 100A
- Degrees Centigrade
Fig. 6. Drain Curre nt vs . Cas e
Tem perature
90
External-Lead Current Limit
80
70
60
50
40
- Amperes
D
I
30
20
10
0
-50 -25 0 25 50 75 100 125 150 175
T
- Degrees Centigrade
C
© 2006 IXYS All rights reserved
Page 4
IXTQ 200N06P
Fig. 7. Input Admittance
225
200
175
150
125
100
- Amperes
D
I
75
50
25
0
2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
TJ = 150ºC
25
-40
º
º
C
C
V
G S
- Volts
Fig. 9. Sour ce Cur r e nt vs .
Source-To-Drain Voltage
350
300
250
200
150
- Amperes
S
I
100
T
= 150ºC
J
50
0
0.4 0. 6 0.8 1 1.2 1.4 1.6
V
T
S D
= 25ºC
J
- Volts
Fig. 8. Transconductance
100
90
80
70
60
50
- Siemens
40
f s
g
30
20
10
0
0 25 50 75 100 125 150 175 200 225 250
TJ = -40ºC
25
150
I
- Amperes
D
º
C
º
C
Fig. 10. Gate Charge
10
V
= 50V
9
8
7
6
5
- Volts
G S
4
V
3
2
1
0
DS
= 100A
I
D
= 10m A
I
G
0 25 50 75 100 125 150 175 200
Q G - nanoCoulombs
Fig. 11. Capacitance
100,000
f = 1MHz
10,000
1,000
Capacitance - pic oFar ads
100
0 5 10 15 20 25 30 35 40
C
iss
C
oss
C
rss
VDS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
Fig. 12. Forw ard-Bias
Safe Operating Area
1000
R
Limit
DS(on)
100µs
1ms
100
- Amperes
D
I
TJ = 175ºC
= 25ºC
T
C
10
110100
DC
V
D S
10ms
- Volts
Page 5
IXTQ 200N06P
Fig . 13. M axim um Trans ient Th e rm al Re s istance
1.00
0.10
ºC / W
-
( t h ) J C
0.01
R
0.00
0.1 1 10 100 1000
Pu ls e W id t h - millis e c onds
© 2006 IXYS All rights reserved
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