Page 1
PolarHT
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTQ 150N06P
V
I
D25
R
DSS
DS(on)
= 60 V
= 150 A
≤≤
≤ 10 m
≤≤
ΩΩ
Ω
ΩΩ
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DRMS
I
DM
I
AR
E
AR
E
AS
dv/dt I
TJ= 25° C to 175° C60V
TJ= 25° C to 175° C; RGS = 1 MΩ 60 V
Continuous ±20 V
Transient ±30 V
TC= 25° C 150 A
External lead current limit 75 A
TC= 25° C, pulse width limited by T
JM
280 A
TC= 25° C60A
TC= 25° C60mJ
TC= 25° C 2.5 J
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
S
, 10 V/ns
DSS
TJ≤ 150° C, RG = 10 Ω
P
T
T
T
T
T
M
D
J
JM
stg
L
SOLD
d
TC= 25° C 480 W
-55 ... +175 °C
175 °C
-55 ... +150 °C
1.6 mm (0.062 in.) from case for 10 s 300 ° C
Plastic body for 10 s 260 ° C
Mounting torque 1.13/10 Nm/lb.in.
Weight 5.5 g
Symbol Test Conditions Characteristic Values
(TJ = 25° C, unless otherwise specified) Min. Typ. Max.
TO-3P (IXTQ)
G
D
S
G = Gate D = Drain
S = Source TAB = Drain
(TAB)
Features
l
International standard package
l
Unclamped Inductive Switching (UIS)
rated
l
Low package inductance
- easy to drive and to protect
Advantages
l
Easy to mount
l
Space savings
l
High power density
BV
V
I
GSS
I
DSS
DSS
GS(th)
VGS= 0 V, ID = 250 µA60V
VDS= VGS, ID = 250µA 2.5 5.0 V
VGS= ±20 VDC, VDS = 0 ±100 nA
VDS= V
DSS
VGS= 0 V TJ = 150° C 250 µA
R
DS(on)
VGS= 10 V, ID = 0.5 I
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 2006 IXYS All rights reserved
D25
25 µA
810mΩ
DS99254E(12/05)
Page 2
IXTQ 150N06P
Symbol Test Conditions Characteristic Values
= 25° C, unless otherwise specified)
J
Min. Typ. Max.
3000 pF
850 pF
27 ns
D25
53 ns
45 ns
118 nC
D25
30 nC
55 nC
0.31° C/W
0.21 ° C/W
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCS
(T
VDS= 10 V; ID = 0.5 I
, pulse test 32 50 S
D25
VGS = 0 V, VDS = 25 V, f = 1 MHz 2100 pF
VGS = 10 V, VDS = 0.5 V
DSS
, ID = I
RG = 10 Ω (External) 66 ns
VGS= 10 V, VDS = 0.5 V
, ID = 0.5 I
DSS
Source-Drain Diode Characteristic Values
(T
Symbol Test Conditions Min. Typ. Max.
= 25° C, unless otherwise specified)
J
TO-3P (IXTQ) Outline
I
S
I
SM
V
SD
VGS = 0 V 150 A
Repetitive 280 A
IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
t
rr
Q
RM
IF = 25 A, -di/dt = 100 A/µs90ns
VR = 30 V, VGS = 0 V 2.0 µC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
Page 3
IXTQ 150N06P
d
Fig. 1. Output Characteristics
º
@ 25
C
160
V
= 10V
140
120
100
80
- Amperes
D
60
I
40
20
0
0 0.2 0.4 0. 6 0.8 1 1.2 1.4 1.6 1.8 2
GS
9V
V
- Volts
D S
8V
7V
6V
5V
Fig. 3. Output Characteristics
º
@ 150
160
140
120
100
80
- Amperes
D
60
I
40
20
0
00.511.522.533.54
V
= 10V
GS
9V
V
D S
C
8V
7V
6V
5V
- Volts
Fig. 2. Extende d Output Characteristics
º
@ 25
C
300
V
= 10V
GS
270
240
210
180
150
120
- Amperes
D
I
90
60
30
0
012345678910
V
- Volts
D S
Fig . 4. R
Nor m aliz e d to 0.5 I
DS(on
)
Value vs. Junction Tem pe rature
2.4
2.2
1.8
1.6
- Normalized
1.4
1.2
D S ( o n )
R
0.8
0.6
VGS = 10V
2
I
= 150A
D
ID = 75A
1
-50 -25 0 25 50 75 100 125 150 175
T
- Degrees Centigrade
J
9V
8V
7V
6V
5V
D25
Fig . 5. R
Value vs. Drain Curr e nt
2.8
2.6
2.4
2.2
2
1.8
- Normalize
1.6
1.4
D S ( o n )
R
VGS = 15V
1.2
1
0.8
0.6
0 25 50 75 100 125 150 175 200 225 250
Norm alized to 0.5 I
DS(on)
VGS = 10V
I D - Amperes
D25
TJ = 175ºC
TJ = 25ºC
Fig. 6. Drain Current vs. Case
Tem perature
90
External Lead Current Lim it
80
70
60
50
40
- Amperes
D
I
30
20
10
0
-50 -25 0 25 50 75 100 125 150 175
T
- Degrees Centigrade
C
© 2006 IXYS All rights reserved
Page 4
IXTQ 150N06P
Fig. 7. Input Admittance
275
250
225
200
175
150
125
- Amperes
D
100
I
75
50
25
0
3456 78910
V
G S
TJ = -40ºC
25
150
- Volts
º
C
º
C
Fig. 9. Sour ce Current vs.
Source-To-Drain Voltage
300
250
200
150
- Amperes
S
I
100
T
= 150ºC
J
50
T
= 25ºC
J
0
0.4 0.6 0.8 1 1. 2 1.4 1.6
V
S D
- Volts
Fig. 8. Transconductance
70
60
50
40
- Siemens
30
f s
g
20
10
0
0 50 100 150 200 250 300
I
- Amperes
D
TJ = -40ºC
25
150
Fig. 10. Gate Char ge
10
V
= 30V
DS
9
8
7
6
5
- Volts
G S
4
V
3
2
1
0
= 75A
I
D
I
= 10m A
G
0 20406080100120
Q G - nanoCoulombs
º
C
º
C
Fig. 11. Capacitance
10000
C
iss
C
1000
Capacitance - picoFarads
100
f = 1MHz
0 5 10 15 20 25 30 35 40
oss
C
rss
VDS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
Fig. 12. Forw ard-Bias
Safe Operating Area
1000
R
Limit
DS(on)
100
- Amperes
D
I
V
D S
DC
- Volts
TJ = 175ºC
= 25ºC
T
C
10
110100
25µs
100µs
1ms
10ms
Page 5
IXTQ 150N06P
Fig. 13. M axim um Tran s ient The rm al Res istance
1.00
ºC / W
-
0.10
( t h ) J C
R
0.01
0.1 1 10 100 1000
Pu ls e W id t h - m illis e c onds
© 2006 IXYS All rights reserved
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