Page 1
Preliminary Technical Information
PolarHV
TM
Power MOSFET
(Electrically Isolated Tab)
IXTP 8N50PM
V
I
D25
R
N-Channel Enhancement Mode
Avalanche Rated
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt I
TJ= 25° C to 150° C 500 V
TJ= 25° C to 150° C; RGS = 1 MΩ 500 V
Continuous ± 30 V
Transient ± 40 V
TC= 25° C4A
TC= 25° C, pulse width limited by T
JM
14 A
TC= 25° C8A
TC= 25° C20mJ
TC= 25° C 400 mJ
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
S
, 10 V/ns
DSS
TJ≤ 150° C, RG = 18 Ω
P
T
T
T
T
T
M
D
J
JM
stg
L
SOLD
d
TC= 25° C41W
-55 ... +150 °C
150 °C
-55 ... +150 °C
1.6 mm (0.062 in.) from case for 10 s 300 °C
Plastic body for 10 s 260 °C
Mounting torque 1.13/10 Nm/lb.in.
Weight 4g
OVERMOLDED TO-220
(IXTP...M) OUTLINE
Features
l
Plastic overmolded tab for electrical
isolation
l
International standard package
l
Unclamped Inductive Switching (UIS)
rated
l
Low package inductance
- easy to drive and to protect
DSS
= 500 V
= 4 A
≤≤
≤ 0.8
DS(on)
G
G = Gate D = Drain
S = Source
≤≤
Isolated Tab
D
S
ΩΩ
Ω
ΩΩ
Symbol Test Conditions Characteristic Values
(TJ = 25° C, unless otherwise specified) Min. Typ. Max.
BV
V
I
GSS
I
DSS
DSS
GS(th)
VGS= 0 V, ID = 250 µA 500 V
VDS= VGS, ID = 250µA 3.0 5.5 V
VGS= ±30 VDC, VDS = 0 ±100 nA
VDS= V
DSS
5 µA
VGS= 0 V TJ = 125° C50µA
R
DS(on)
VGS= 10 V, ID = 4 A 0.8 Ω
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 2006 IXYS All rights reserved
Advantages
l
Easy to mount
l
Space savings
l
High power density
DS99582E(04/06)
Page 2
IXTP 8N50PM
Symbol Test Conditions Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min. Typ. Max.
g
C
C
C
t
t
t
t
Q
Q
Q
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJS
VDS= 10 V; ID = 4 A 5 8 S
1050 pF
VGS = 0 V, VDS = 25 V, f = 1 MHz 120 pF
12 pF
22 ns
VGS = 10 V, VDS = 0.5 V
, ID = 8 A 28 ns
DSS
RG = 18 Ω (External) 65 ns
23 ns
20 nC
VGS= 10 V, VDS = 0.5 V
, ID = 4 A 7 nC
DSS
7nC
3.0 ° C/W
Source-Drain Diode Characteristic Values
(TJ = 25° C, unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
ISOLATED TO-220 (IXTP...M)
123
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
I
S
I
SM
V
SD
VGS = 0 V 8 A
Repetitive 14 A
IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
t
rr
IF = 3 A, VGS = 0 V, VR = 100 V 400 ns
-di/dt = 100 A/µs
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered
are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production
design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
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