Page 1
Preliminary Technical Information
PolarHV
TM
IXTP 10N60PM
Power MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode
Avalanche Rated
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
TJ= 25°C to 175°C 600 V
TJ= 25°C to 175°C; RGS = 1 MΩ 600 V
Continuous ±30 V
Transient ±40 V
TC= 25°C5A
TC= 25°C, pulse width limited by T
TC= 25°C10A
TC= 25°C20mJ
TC= 25°C 500 mJ
JM
30 A
V
DSS
I
D25
R
DS(on)
OVERMOLDED TO-220
(IXTP...M) OUTLINE
G
= 600 V
= 5 A
≤≤
740 m
≤
≤≤
D
S
G = Gate D = Drain
S = Source
ΩΩ
Ω
ΩΩ
Isolated Tab
dv/dt I
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight 4g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
BV
DSS
V
GS(th)
I
GSS
I
DSS
≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ V
S
TJ≤ 150°C, RG = 10 Ω
TC= 25°C50W
1.6 mm (0.062 in.) from case for 10 s 300 °C
Plastic body for 10 s 260 °C
Mounting torque 1.13/10 Nm/lb.in.
VGS= 0 V, ID = 250 μA 600 V
VDS= VGS, ID = 100μA 3.0 5.0 V
VGS= ±30 VDC, VDS = 0 ±100 nA
VDS= V
VGS= 0 V TJ = 125°C50μA
DSS
, 10 V/ns
DSS
-55 ... +150 °C
150 °C
-55 ... +150 °C
5 μA
Features
z
Plastic overmolded tab for electrical
isolation
z
International standard package
z
Unclamped Inductive Switching (UIS)
rated
z
Low package inductance
- easy to drive and to protect
Advantages
z
Easy to mount
z
Space savings
z
High power density
R
DS(on)
© 2006 IXYS All rights reserved
VGS= 10 V, ID = 5 A 740 mΩ
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
DS99450E(04/06)
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IXTP 10N60PM
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
g
C
C
C
t
t
t
t
Q
Q
Q
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJS
VDS= 10 V; ID = 5 A, pulse test 6 11 S
1610 pF
VGS = 0 V, VDS = 25 V, f = 1 MHz 165 pF
14 pF
20 ns
VGS = 10 V, VDS = 0.5 V
, ID = 10 A 24 ns
DSS
RG = 10 Ω (External) 55 ns
18 ns
32 nC
VGS= 10 V, VDS = 0.5 V
, ID = 5 A 11 nC
DSS
10 nC
2.5 °C/W
Source-Drain Diode Characteristic Values
(T
Symbol Test Conditions Min. Typ. Max.
= 25°C, unless otherwise specified)
J
ISOLATED TO-220 (IXTP...M)
123
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
I
S
I
SM
V
SD
VGS = 0 V 10 A
Repetitive 30 A
IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
t
rr
IF = 9 A, -di/dt = 100 A/μs 500 ns
VR = 100V
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from data gathered during objective characterizations of preliminary engineering lots; but
also may yet contain some information supplied during a pre-production design evaluation. IXYS
reserves the right to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
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