Page 1
Preliminary Technical Information
Linear Power MOSFET
With Extended FBSOA
IXTN46N50L V
D
N-Channel Enhancement Mode
G
S
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
P
D
T
J
T
JM
T
stg
V
ISOL
M
d
Terminal connection torque 1.3/11.5 Nm/lb.in.
Weight 30 g
TJ= 25°C to 150°C 500 V
TJ= 25°C to 150°C; RGS = 1 MΩ 500 V
Continuous ±30 V
Transient ±40 V
TC= 25°C 46 A
TC= 25°C, pulse width limited by TJM 100 A
TC= 25°C 46 A
TC= 25°C 60 mJ
TC= 25°C 1.5 J
TC= 25°C 700 W
-55 to +150 °C
150 °C
-55 to +150 °C
50/60 Hz, RMS, T = 1 min 2500 V~
I
≤ 1 mA, T = 1 s 3000 V~
ISOL
Mounting torque for Base Plate 1.5/13 Nm/lb.in.
S
DSS
I
D25
R
DS(on)
miniBLOC, SOT-227 B (IXTN)
E153432
G = Gate D = Drain
S = Source
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
Features
= 500 V
= 46 A
≤≤
≤ 0.16
≤≤
S
G
S
D
ΩΩ
Ω
ΩΩ
• Designed for linear operation
• International standard package
• Molding epoxy meets UL94 V-0
flammability classification
• miniBLOC with Aluminium nitride
isolation
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
© 2007 IXYS CORPORATION, All rights reserved
VGS= 0 V, ID = 1 mA 500 V
VDS= VGS, ID = 250 μA36V
VGS= ±30 V, VDS = 0 V ±200 nA
VDS= V
VGS= 0 V TJ = 125°C1mA
VGS= 20 V, ID = 0.5 I
Note 1
DSS
D25
TJ = 25°C50μA
0.16 Ω
Applications
• Programmable loads
• Current regulators
• DC-DC converters
• Battery chargers
• DC choppers
• Temperature and lighting controls
Advantages
• Easy to mount
• Space savings
• High power density
DS99399A(03/07)
Page 2
IXTN46N50L
Symbol Test Conditions Characteristic Values
= 25°C, unless otherwise specified)
(T
J
Min. Typ. Max.
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCS
VDS= 10 V; ID = 0.5 • I
, Note 1 7 10 13 S
D25
7000 pF
VGS= 0 V, VDS = 25 V, f = 1 MHz 900 pF
170 pF
40 ns
VGS= 15 V, VDS = 0.5 • V
, ID = 0.5 • I
DSS
D25
50 ns
RG= 2 Ω (External), 80 ns
42 ns
260 nC
VGS= 15 V, VDS = 0.5 • V
, ID = 0.5 • I
DSS
D25
85 nC
125 nC
0.18 °C/W
0.05 °C/W
Safe Operating Area Specification
Symbol Test Conditions Min. Typ. Max.
SOT-227B (IXTN) Outline
(M4 screws (4x) supplied)
SOA VDS = 400 V, ID = 0.6 A, TC = 90°C 240 W
Source-Drain Diode Characteristic Values
= 25°C, unless otherwise specified)
(T
Symbol Test Conditions Min. Typ. Max.
I
S
I
SM
V
SD
t
rr
VGS= 0 V 46 A
Repetitive; pulse width limited by T
IF = IS, VGS = 0 V, 1.5 V
Note 1
IF = IS, -dt/dt = 100 A/μs, VR = 100 V 600 ns
J
JM
100 A
Note 1: Pulse test, t < 300 μs, duty cycle, d ≤ 2 %
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from data gathered during objective characterizations of preliminary engineering lots; but
also may yet contain some information supplied during a pre-production design evaluation. IXYS
reserves the right to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Page 3
IXTN46N50L
V
Fig. 1. Output Characteristics
@ 25ºC
50
45
40
35
30
25
- A mperes
20
D
I
15
10
5
0
0123456789
V
= 20V
GS
18V
16V
V
- Volts
D S
Fig. 3. Output Characteristics
@ 125ºC
50
45
40
35
30
25
- A mpe res
20
D
I
15
10
5
0
024681012141618
V
= 20V
GS
18V
16V
V
- Volts
D S
14 V
12 V
10 V
9V
8V
7V
14V
12 V
10V
9V
8V
7V
Fig. 2. Extended Output Characteristics
@ 25ºC
100
90
80
70
60
50
40
- A mpe res
D
I
30
20
10
0
0 3 6 9 12 15 18 21 24 27 30
Fig. 4. R
V
= 20V
GS
18V
V
- Volts
D S
Normalized to 0.5 I
DS(on)
16V
14V
12V
10V
9V
8V
D25
vs. Junction Temperature
3.1
2.8
2.5
2.2
1.9
1.6
- Normalized
1.3
D S (on)
R
1.0
0.7
0.4
VGS = 20V
ID = 46A
ID = 23A
-50-250 255075100125150
TJ - Degrees Centigrade
alue
Fig. 5. R
0.5 I
3.0
- Normalized
R
2.8
2.6
2.4
2.2
2.0
1.8
1.6
D S (on)
1.4
1.2
1.0
0.8
VGS = 20V
0 20406080100120
Normalized to
DS(on)
Value vs. I
D25
TJ = 125ºC
D
TJ = 25ºC
I D - Amperes
50
45
40
35
30
25
- A mperes
20
D
I
15
10
5
0
-50-250 255075100125150
Fig. 6. Drain Current vs. Case
Tempe rature
TC - Degrees Centigrade
© 2007 IXYS CORPORATION, All rights reserved
Page 4
IXTN46N50L
Fig. 7. Input Admittance
70
60
50
40
30
- A mpe res
D
I
20
10
0
TJ = 125ºC
25ºC
-40ºC
56789101112131415
V
- Volts
G S
Fig. 9. Source Current vs.
Source-To-Drain Voltage
70
60
50
40
30
- A mpe res
S
I
20
10
TJ = 125ºC
TJ = 25ºC
Fig. 8. Transconductance
20
18
16
14
12
10
- Siemens
8
f s
g
6
4
2
0
0 10203040506070
TJ = -40º C
25ºC
125ºC
I D - Amperes
Fig. 10. Gate Charge
16
V
= 250V
14
12
10
- V o lts
G S
V
DS
I
= 23A
D
I
= 10m A
G
8
6
4
2
0
0.5 0.6 0.7 0. 8 0.9 1
V
- Volts
S D
Fig. 11. Capacitance
10000
C
iss
C
1000
oss
Capacitance - pF
C
rss
f = 1MHz
100
0 5 10 15 20 25 30 35 40
V
- Volts
D S
IXYS reserves the right to change limits, test conditions, and dimensions.
0
0 30 60 90 120 150 180 210 240 270
Q G - nanoCoulombs
Page 5
IXTN46N50L
Fig. 12. Forward-Bias Safe
Operating Area @ T
1000
R
Limit
DS
(on)
100
10
- Amperes
D
I
1
0.1
10 100 1000
V
D S
- Volts
= 25ºC
C
DC
TJ = 150ºC
Fig. 14. Maximum Transient Thermal Impedance
1.000
25µs
100µs
1ms
10ms
Fig. 13. Forw ard-Bias Safe
Operating Area @ T
1000
R
Limit
DS
(on)
100
10
- Amperes
D
I
1
0.1
10 100 1000
V
D S
- Volts
= 90ºC
C
DC
TJ = 150ºC
25µs
100µs
1ms
10ms
(ºC/W)
-
Z
0.100
(th) J C
0.010
0.001
0.1 1 10 100 1000
Pulse Width - milliseconds
© 2007 IXYS CORPORATION, All rights reserved
IXYS REF: T_46N50L (8L) 4-05-07-A.xls
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