Page 1
Advance Technical Information
Linear L2TM Power
IXTN110N20L2
MOSFET w/Extended
FBSOA
N-Channel Enhancement Mode
Guaranteed FBSOA
Avalanche Rated
Symbol Test Conditions Maximum Ratings
T
V
DSS
V
T
DGR
Continuous ±20 V
V
GSS
V
Transient ±30 V
GSM
T
I
D25
IDM T
T
I
A
EAS T
PD T
T
-55 ... +150 °C
J
TJM 150 °C
T
-55 ... +150 °C
stg
T
1.6mm (0.062 in.) from Case for 10s 300 °C
L
T
Plastic Body for 10s 260 °C
SOLD
V
50/60 Hz, RMS t = 1 Minute 2500 V~
ISOL
Mounting Torque 1.5/13 Nm/lb.in.
M
d
Weight 30 g
= 25°C to 150°C 200 V
J
= 25°C to 150°C, RGS = 1MΩ 200 V
J
= 25°C 100 A
C
= 25°C, Pulse Width Limited by TJM 275 A
C
= 25°C 55 A
C
= 25°C 5 J
C
= 25°C 735 W
C
I
≤ 1mA t = 1 Second 3000 V~
ISOL
Terminal Connection Torque 1.3/11.5 Nm/lb.in.
V
= 200V
DSS
I
= 100A
D25
R
DS(on)
miniBLOC, SOT-227
E153432
G = Gate D = Drain
S = Source
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
(Gate Return) Terminal.
Features
≤≤
≤ 24m
≤≤
S
G
ΩΩ
Ω
ΩΩ
S
D
• Designed for Linear Operation
• International Standard Package
Guaranteed FBSOA at 75°C
• Avalanche Rated
• Molding Epoxy Meets UL94 V-0
Flammability Classification
• MiniBLOC with Aluminium Nitride
Isolation
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BV
V
DSS
V
V
GS(th)
I
V
GSS
I
V
DSS
R
V
DS(on)
© 2009 IXYS CORPORATION, All Rights Reserved
= 0V, ID = 1mA 200 V
GS
= VGS, ID = 3mA 2.0 4.5 V
DS
= ±20V, VDS = 0V ±200 nA
GS
= V
DS
TJ = 125°C 2.5 mA
= 10V, ID = 55A, Note 1 24 mΩ
GS
= 0V 50 μA
DSS, VGS
Applications
• Programmable Loads
• Current Regulators
• DC-DC Converters
• Battery Chargers
• DC Choppers
• Temperature and Lighting Controls
Advantages
• Easy to Mount
• Space Savings
• High Power Density
DS100196(9/09)
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IXTN110N20L2
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs V
C
23 nF
iss
C
V
oss
C
320 pF
rss
t
40 ns
d(on)
t
100 ns
r
t
33 ns
d(off)
tf 135 ns
500 nC
Q
g(on)
Q
V
gs
= 10V, ID = 55A, Note 1 55 75 95 S
DS
= 0V, VDS = 25V, f = 1MHz 2160 pF
GS
Resistive Switching Times
V
= 10V, VDS = 0.5 • V
GS
R
= 1Ω (External)
G
= 10V, VDS = 0.5 • V
GS
, ID = 55A
DSS
, ID = 55A 110 nC
DSS
Qgd 182 nC
R
0.17 °C/W
thJC
R
0.05 °C/W
thCS
Safe-Operating-Area Specification
Symbol Test Conditions Characteristic Values
Min. Typ. Max.
SOA V
= 200V, ID = 1.75A, TC = 75°C , Tp = 3s 350 W
DS
SOT-227B (IXTN) Outline
(M4 screws (4x) supplied)
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
IS V
= 0V 110 A
GS
ISM Repetitive, Pulse Width Limited by TJM 440 A
VSD I
trr 420 ns
IRM 39 A
QRM 8.3 μC
= 55A, VGS = 0V, Note 1 1.35 V
F
I
= 55A, -di/dt = 100A/μs,
F
V
100V, VGS = 0V
R =
Note 1. Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Page 3
IXTN110N20L2
V
V
V5V
V6V8V
V5V
V
V
Fig. 1. Outp ut C h aracteristics
= 25ºC
@ T
120
100
80
60
- Amperes
D
I
40
20
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V
= 20V
GS
14V
12V
10V
8V
J
6.5
6
4
VDS - Volts
Fig. 3. Output Characteristics
= 125ºC
@ T
J
V
= 20V
GS
12V
10V
8V
6V
5
- Amperes
D
I
120
100
80
60
40
Fig. 2. Extended Output Characteristics
= 25ºC
@ T
280
240
200
160
120
- Amperes
D
I
80
40
0
0 2 4 6 8 10 12 14 16 18 20
3.2
2.8
2.4
2.0
- Normalized
1.6
DS(on)
R
1.2
Fig. 4. R
V
= 10V
GS
V
= 20V
GS
14V
12V
10V
DS(on)
Junction Temperature
J
6.5
4
VDS - Volts
Normali zed to ID = 55A Value vs.
I D = 110A
I D = 55A
20
4
0
01234567
VDS - Volts
Fig. 5. R
Normalized to ID = 55A Value vs.
DS(on)
Drain Current
4.0
V
= 10V
GS
3.5
3.0
2.5
- Normalized
2.0
DS(on)
R
1.5
1.0
0.5
0 20 40 60 80 100 120 140 160 180 200 220 240 260
ID - Amperes
TJ = 125ºC
TJ = 25ºC
0.8
0.4
-50 -25 0 25 50 75 100 125 150
TJ - Degrees Cen tigrade
Fig. 6. Maximum Drain Cur rent vs.
Case Temp erature
120
100
80
60
- Amperes
D
I
40
20
0
-50 -25 0 25 50 75 100 125 150
TC - Degrees Centigrade
© 2009 IXYS CORPORATION, All Rights Reserved
Page 4
IXTN110N20L2
Fig. 7. Input Admittance
160
140
120
100
80
- Amperes
D
I
60
40
20
0
3.54.04.55.05.56.06.57.0
T
= 125ºC
J
25ºC
- 40ºC
VGS - Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
320
280
240
200
Fig. 8. T r anscond uctance
140
T
= - 40ºC
120
100
80
- Siemens
60
f s
g
40
20
0
0 20406080100120140160
J
25ºC
125ºC
ID - Am peres
Fig. 10. Gate Charge
16
V
= 100V
DS
14
I
= 55A
D
I
= 10mA
G
12
10
160
- Amperes
S
I
120
T
= 125ºC
80
40
0
0.30.40.50.60.70.80.91.01.11.21.31.41.5
J
TJ = 25ºC
VSD - Volts
Fig. 11. Capacitance
100,000
= 1 MHz
f
C
10,000
1,000
iss
C
oss
Capacitance - PicoFarads
C
rss
100
0 5 10 15 20 25 30 35 40
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
8
- Volts
GS
V
6
4
2
0
0 100 200 300 400 500 600 700 800
QG - NanoCoulombs
Fig. 12. Maximum Transient Thermal Impedance
1.000
0.100
- ºC / W
(th)JC
Z
0.010
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Page 5
IXTN110N20L2
Fig. 1 3. F o r ward-Bi as Safe Operatin g Area
@ T
= 25ºC
C
1,000
R
Limit
DS(on)
100
- Amperes
D
I
10
TJ = 150ºC
= 25ºC
T
C
Single Pulse
1
1 10 100 1,000
VDS - Volts
25µs
100µs
1ms
10ms
100ms
DC
Fig. 14. Forward-Bias Safe Operating Area
@ T
= 75ºC
C
1,000
R
Limit
DS(on)
100
- Amperes
D
I
10
TJ = 150ºC
= 75ºC
T
C
Single Pulse
1
1 10 100 1,000
VDS - Vol ts
25µs
100µs
1ms
10ms
100ms
DC
DC
© 2009 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_110N20L2(9R)9-16-09
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