Page 1
查询6N80供应商
Standard
Power MOSFET
N-Channel Enhancement Mode
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
P
D
T
J
T
JM
T
stg
M
d
Weight TO-204 = 18 g, TO-247 = 6 g
TJ= 25°C to 150°C 800 V
TJ= 25°C to 150°C; RGS = 1 MΩ 800 V
Continuous ±20 V
Transient ±30 V
TC= 25°C6A
TC= 25°C, pulse width limited by T
JM
TC= 25°C 180 W
Mounting torque 1.13/10 Nm/lb.in.
IXTH/IXTM 6 N80 800 V 6 A 1.8
IXTH/IXTM 6 N80A 800 V 6 A 1.4
24 A
-55 ... +150 °C
150 °C
-55 ... +150 °C
V
DSS
I
D25
TO-247 AD (IXTH)
TO-204 AA (IXTM)
G
G = Gate, D = Drain,
S = Source, TAB = Drain
R
DS(on)
Ω Ω
Ω
Ω Ω
ΩΩ
Ω
ΩΩ
D (TAB)
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
VGS= 0 V, ID = 3 mA 800 V
VDS= VGS, ID = 250 µA 2 4.5 V
VGS= ±20 VDC, VDS = 0 ±100 nA
VDS= 0.8 • V
V
= 0 V TJ = 125°C1mA
GS
VGS= 10 V, ID = 0.5 I
DSS
J
TJ = 25°C 250 µA
6N80 1.8 Ω
D25
6N80A 1.4 Ω
min. typ. max.
Pulse test, t ≤ 300 µ s, duty cycle d ≤ 2 %
Features
●
International standard packages
●
Low R
●
Rugged polysilicon gate cell structure
●
Low package inductance (< 5 nH)
HDMOSTM process
DS (on)
- easy to drive and to protect
●
Fast switching times
Applications
●
Switch-mode and resonant-mode
power supplies
●
Motor controls
●
Uninterruptible Power Supplies (UPS)
●
DC choppers
Advantages
●
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
●
Space savings
●
High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: 408-982-0700 Fax: 408-496-0670
91542E(5/96)
IXYS Semiconductor
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: +49-6206-5030 Fax: +49-6206-503629
Page 2
IXTH 6N80 IXTH 6N80A
IXTM 6N80 IXTM 6N80A
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
J
VDS= 10 V; ID = 0.5 • I
, pulse test 4 6 S
D25
VGS= 0 V, VDS = 25 V, f = 1 MHz 250 pF
VGS= 10 V, VDS = 0.5 • V
, ID = 0.5 I
DSS
RG = 2 Ω, (External) 100 200 ns
VGS= 10 V, VDS = 0.5 • V
, ID = 0.5 I
DSS
min. typ. max.
2800 pF
100 pF
35 100 ns
D25
40 110 ns
60 100 ns
110 130 nC
D25
15 30 nC
50 70 nC
0.7 K/W
0.25 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
I
SM
V
SD
VGS= 0 V 6 A
Repetitive; pulse width limited by T
JM
24 A
IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
TO-247 AD (IXTH) Outline
1 2 3
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
2.2 2.54 .087 .102
1
A
2.2 2.6 .059 .098
2
b 1.0 1.4 .040 .055
b
1.65 2.13 .065 .084
1
2.87 3.12 .113 .123
b
2
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0 .232 0 .252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
TO-204AA (IXTM) Outline
t
rr
IF = IS, -di/dt = 100 A/µs, VR = 100 V 900 ns
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
Pins 1 - Gate 2 - Source
Case - Drain
Dim. Millimeter Inches
Min. Max. Min. Max.
A 6.4 11.4 .250 .450
A1 3.42 .135
∅b .97 1.09 .038 .043
∅D 22.22 .875
e 10.67 11.17 .420 .440
e1 5.21 5.71 .205 .225
L 7.93 .312
∅p 3.84 4.19 .151 .165
∅p1 3.84 4.19 .151 .165
q 30.15 BSC 1.187 BSC
R 13.33 .525
R1 4.77 .188
s 16.64 17.14 .655 .675
Page 3
IXTH 6N80 IXTH 6N80A
IXTM 6N80 IXTM 6N80A
Fig. 1 Output Characteristics Fig. 2 Input Admittance
- Amperes
D
I
9
8
7
6
5
4
3
2
1
0
TJ = 25°C
V
= 10V
GS
0 5 10 15 20 25 30
VDS - Volts
Fig. 3 R
vs. Drain Current Fig. 4 Temperature Dependence
DS(on)
3.0
TJ = 25°C
2.8
2.6
2.4
- Ohms
DS(on)
2.2
R
V
GS
= 10V
VGS = 15V
2.0
1.8
0246810
7V
6V
9
8
7
6
- Amperes
D
I
5
4
3
TJ = 25°C
2
1
0
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5
VGS - Volts
of Drain to Source Resistance
2.50
2.25
2.00
1.75
1.50
- Normalized
1.25
DS(on)
1.00
R
0.75
0.50
-50 -25 0 25 50 75 100 125 150
ID = 2.5A
ID - Amperes
Fig. 5 Drain Current vs. Fig. 6 Temperature Dependence of
Case Temperature Breakdown and Threshold Voltage
7
6
5
4
3
- Amperes
D
I
2
1
0
-50 -25 0 25 50 75 100 125 150
TC - Degrees C
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: 408-982-0700 Fax: 408-496-0670
6N80A
6N80
TJ - Degrees C
1.2
BV
CES
1.1
1.0
0.9
- Normalized
0.8
G(th)
0.7
BV/V
0.6
0.5
-50 -25 0 25 50 75 100 125 150
TJ - Degrees C
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: +49-6206-5030 Fax: +49-6206-503629
V
GS(th)
IXYS Semiconductor
Page 4
IXTH 6N80 IXTH 6N80A
IXTM 6N80 IXTM 6N80A
Fig.7 Gate Charge Characteristic Curve Fig.8 Forward Bias Safe Operating Area
10
VDS = 500V
9
8
ID = 3.0A
IG = 10mA
10
Limited by R
DS(on)
7
6
5
- Volts
GE
V
4
3
- Amperes
D
I
1
2
1
0
01020304050607080
Gate Charge - nCoulombs
0.1
1 10 100 1000
VDS - Volts
Fig.9 Capacitance Curves Fig.10Source Current vs. Source
to Drain Voltage
Capac itan ce - pF
2750
2500
C
iss
2250
2000
1750
1500
f = 1 MHz
V
= 25V
DS
1250
1000
750
500
250
0
C
oss
C
rss
0 5 10 15 20 25
9
8
7
6
5
- Amperes
D
I
4
3
T
= 125°C
J
2
1
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
10us
100us
1ms
10m s
100ms
TJ = 25°C
VCE - Volts
Fig.11 Transient Thermal Impedance
1
D=0.5
D=0.2
0.1
D=0.1
D=0.05
D=0.02
D=0.01
0.01
Single Pulse
Thermal Response - K/W
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10
Time - Seconds
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
VDS - Volts
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