Page 1
PolarHT
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTK 180N15P
V
I
D25
R
DSS
DS(on)
= 150 V
= 180 A
≤≤
≤ 10 m
≤≤
ΩΩ
Ω
ΩΩ
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
DSS
V
GSM
I
D25
I
D(RMS)
I
DM
I
AR
E
AR
E
AS
dv/dt I
TJ= 25° C to 175° C 100 V
TJ= 25° C to 175° C; RGS = 1 MΩ 100 V
Continuous ±20 V
Transient ±30 V
TC= 25° C 180 A
External lead current limit 75 A
TC= 25° C, pulse width limited by T
JM
380 A
TC= 25° C60A
TC= 25° C 100 mJ
TC= 25° C4J
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
S
, 10 V/ns
DSS
TJ≤ 150° C, RG = 4 Ω
P
T
T
T
T
T
M
D
J
JM
stg
L
SOLD
d
TC= 25° C 800 W
-55 ... +175 °C
175 °C
-55 ... +150 °C
1.6 mm (0.062 in.) from case for 10 s 300 ° C
Plastic body for 10 s 260 ° C
Mounting torque 1.13/10 Nm/lb.in.
Weight 10 g
Symbol Test Conditions Characteristic Values
(TJ = 25° C, unless otherwise specified) Min. Typ. Max.
BV
V
I
GSS
I
DSS
DSS
GS(th)
VGS= 0 V, ID = 250 µA 150 V
VDS= VGS, ID = 500µA 2.5 5.0 V
VGS= ±20 VDC, VDS = 0 ±200 nA
VDS= V
DSS
25 µA
VGS= 0 V TJ = 150° C 250 µA
TO-264 (IXTK)
G
D
S
G = Gate D = Drain
S = Source TAB = Drain
(TAB)
Features
l
International standard package
l
Unclamped Inductive Switching (UIS)
rated
l
Low package inductance
- easy to drive and to protect
Advantages
l
Easy to mount
l
Space savings
l
High power density
R
DS(on)
VGS= 10 V, ID = 0.5 I
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 2005 IXYS All rights reserved
D25
10 m Ω
DS99297E(12/05)
Page 2
IXTK 180N15P
Symbol Test Conditions Characteristic Values
= 25° C, unless otherwise specified)
J
Min. Typ. Max.
7000 pF
515 pF
30 ns
36 ns
240 nC
D25
55 nC
140 nC
0.18° C/W
0.15 ° C/W
g
C
C
C
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
R
R
fs
iss
oss
rss
g(on)
gs
gd
thJC
thCS
(T
VDS= 10 V; ID = 0.5 I
, pulse test 55 86 S
D25
VGS = 0 V, VDS = 25 V, f = 1 MHz 2250 pF
VGS = 10 V, VDS = 0.5 V
, ID = 60 A 32 ns
DSS
RG = 3.3 Ω (External) 150 ns
VGS= 10 V, VDS = 0.5 V
, ID = 0.5 I
DSS
Source-Drain Diode Characteristic Values
(T
Symbol Test Conditions Min. Typ. Max.
I
S
I
SM
V
SD
VGS = 0 V 180 A
Repetitive 380 A
IF = IS, VGS = 0 V, 1.5 V
= 25° C, unless otherwise specified)
J
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
TO-264 (IXTK) Outline
Millimeter Inches
Dim.
Min. Max. Min. Max.
A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072
t
rr
Q
RM
IF = 25 A, -di/dt = 100 A/µs 150 ns
VR = 100 V, VGS = 0 V 2.3 µC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
Page 3
IXTK 180N15P
d
d
Fig. 1. Output Char acteristics
º
@ 25
C
180
160
140
120
100
80
- Amperes
D
I
60
40
20
0
0 0.4 0.8 1.2 1.6 2
V
- Volts
D S
V
= 10V
GS
Fig. 3. Output Char acteristics
º
180
@ 150
160
140
120
100
80
- Amperes
D
I
60
40
20
0
0 0.5 1 1.5 2 2.5 3 3.5 4
V
D S
C
V
GS
9V
- Volts
= 10V
6V
5V
7V
Fig. 2. Exte nde d Output Char acteristics
º
@ 25
C
320
V
= 10V
GS
9V
8V
7V
6
280
240
200
160
- Amperes
120
D
I
80
40
0
012345678910
Fig . 4. R
DS(on
9V
8V
7V
6V
V
- Volts
D S
Norm alize d to 0.5 I
)
D25
Value vs . Junction Te m pe r atur e
2.8
2.6
VGS = 10V
2.4
8
2.2
2
I
= 180A
1.8
- Normalize
1.6
1.4
D S ( o n )
1.2
R
1
0.8
0.6
-50 -25 0 25 50 75 100 125 150 175
T
J
D
ID = 90A
- Degrees Centigrade
Fig . 5. R
Nor m alized to 0.5 I
DS(on)
D25
Value vs. Drain Cur r e nt
3.4
3.1
2.8
2.5
2.2
- Normalize
1.9
1.6
D S ( o n )
R
1.3
1
0.7
0 50 100 150 200 250 300 350
VGS = 15V
TJ = 175ºC
VGS = 10V
TJ = 25ºC
90
80
70
60
50
40
- Amperes
D
I
30
20
10
0
-50 -25 0 25 50 75 100 125 150 175
I D - Amperes
Fig. 6. Drain Current vs . Cas e
Tem perature
External Lead Current Lim it
T
- Degrees Centigrade
C
© 2005 IXYS All rights reserved
Page 4
IXTK 180N15P
Fig. 7. Input Admittance
250
225
200
175
150
125
- Amperes
100
D
I
75
TJ = 150ºC
25
50
-40
25
0
4 4 .5 5 5.5 6 6.5 7 7.5 8 8.5 9
º
C
º
C
V
- Volts
G S
Fig. 9. Sour ce Cur re nt vs .
Source-To-Drain Voltage
350
300
250
200
150
- Amperes
S
I
T
100
50
0
0.30.50.70.91.11.31.5
= 150ºC
J
V
S D
T
J
- Volts
= 25ºC
Fig. 8. Transconductance
120
TJ = -40ºC
100
80
60
25
150
º
C
º
C
- Siemens
f s
40
g
20
0
0 25 50 75 100 125 150 175 200 225 250
I
- Amperes
D
Fig. 10. Gate Charge
10
9
V
= 75V
DS
= 90A
I
D
8
7
6
5
- Volts
G S
4
V
3
2
1
0
= 10mA
I
G
0 25 50 75 100 125 150 175 200 225 250
Q G - nanoCoulombs
Fig. 11. Capacitance
100,000
f = 1MHz
C
10,000
1,000
is
C
os
C
rs
Capacit ance - picoFarads
100
0 5 10 15 20 25 30 35 40
VDS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
Fig. 12. Forw ard-Bias
Safe Operating Area
1000
R
Limit
DS(on)
100
- Amperes
D
I
TJ = 175ºC
T
= 25ºC
C
10
1 10 100 1000
V
DC
D S
- Volts
25µs
100µs
1ms
10ms
Page 5
IXTK 180N15P
Fig. 13. M axim um Tran s ie n t The rm al Res istance
1.00
0.10
ºC / W
-
( t h ) J C
0.01
R
0.00
0.1 1 10 100 1000
Pulse Width - millis econds
© 2005 IXYS All rights reserved
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