Page 1
PolarHT
TM
IXTK 120N25P
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
D(RMS)
I
DM
I
AR
E
AR
E
AS
TJ= 25° C to 175° C 250 V
TJ= 25° C to 175° C; RGS = 1 MΩ 250 V
Continuous ±20 V
Transient ±30 V
TC= 25° C 120 A
External lead current limit 75 A
TC= 25° C, pulse width limited by T
JM
300 A
TC= 25° C60A
TC= 25° C60mJ
TC= 25° C 2.5 J
V
I
D25
R
DSS
DS(on)
= 250 V
= 120 A
≤≤
≤ 24 m
≤≤
TO-264 (IXTK)
G
D
S
G = Gate D = Drain
S = Source TAB = Drain
(TAB)
ΩΩ
Ω
ΩΩ
dv/dt I
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
S
, 10 V/ns
DSS
TJ≤ 150° C, RG = 4 Ω
P
T
T
T
T
T
M
D
J
JM
stg
L
SOLD
d
TC= 25° C 700 W
-55 ... +175 °C
175 °C
-55 ... +150 °C
1.6 mm (0.062 in.) from case for 10 s 300 ° C
Plastic body for 10 s 260 ° C
Mounting torque 1.13/10 Nm/lb.in.
Weight 10 g
Symbol Test Conditions Characteristic Values
(TJ = 25° C, unless otherwise specified) Min. Typ. Max.
BV
V
I
GSS
I
DSS
DSS
GS(th)
VGS= 0 V, ID = 250 µA 250 V
VDS= VGS, ID = 500µA 2.5 5.0 V
VGS= ±20 VDC, VDS = 0 ±200 nA
VDS= V
DSS
25 µA
VGS= 0 V TJ = 125° C 250 µA
R
DS(on)
VGS= 10 V, ID = 0.5 I
D25
19 24 m Ω
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Features
l
International standard package
l
Unclamped Inductive Switching (UIS)
rated
l
Low package inductance
- easy to drive and to protect
Advantages
l
Easy to mount
l
Space savings
l
High power density
© 2006 IXYS All rights reserved
DS99175E(12/05)
Page 2
IXTK 120N25P
Symbol Test Conditions Characteristic Values
= 25° C, unless otherwise specified)
J
Min. Typ. Max.
8000 pF
220 pF
30 ns
33 ns
185 nC
D25
50 nC
80 nC
0.18°C/W
0.15 °C/W
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCS
(T
VDS= 10 V; ID = 0.5 I
, pulse test 50 70 S
D25
VGS = 0 V, VDS = 25 V, f = 1 MHz 1300 pF
VGS = 10 V, VDS = 0.5 V
, ID = 60 A 33 ns
DSS
RG = 3.3 Ω (External) 130 ns
VGS= 10 V, VDS = 0.5 V
, ID = 0.5 I
DSS
Source-Drain Diode Characteristic Values
(T
Symbol Test Conditions Min. Typ. Max.
I
S
I
SM
V
SD
VGS = 0 V 120 A
Repetitive 300 A
IF = IS, VGS = 0 V, 1.5 V
= 25° C, unless otherwise specified)
J
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
TO-264 (IXTK) Outline
Dim.
Millimeter Inches
Min. Max. Min. Max.
A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072
t
rr
Q
RM
IF = 25 A, -di/dt = 100 A/µs 200 ns
VR = 100 V, VGS = 0 V 3.0 µC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
Page 3
IXTK 120N25P
d
d
Fig. 1. Output Char acteristics
º
C
@ 25
120
110
100
90
80
70
60
50
- Amperes
D
I
40
30
20
10
0
00.511.522.533.5
V
GS
9V
V
- Volts
D S
= 10V
8V
7V
6V
Fig. 3. Output Character istics
º
V
= 10V
GS
9V
- Volts
D S
C
8V
7V
6V
5V
@ 150
120
110
100
90
80
70
60
- Amperes
50
D
I
40
30
20
10
0
012345678
V
Fig. 2. Exte nded Output Character istics
º
C
@ 25
250
V
= 10V
GS
225
200
175
150
125
100
- Amperes
D
I
75
50
25
0
02468101214161820
Fig . 4. R
9V
8V
7V
6V
V
- Volts
D S
Norm alize d to 0.5 I
DS(on
)
Value vs . Junction Te m pe r atur e
2.8
VGS = 10V
I
= 120A
D
ID = 60A
1
-50 -25 0 25 50 75 100 125 150
T
- Degrees Centigrade
J
- Normalize
D S ( o n )
R
2.5
2.2
1.9
1.6
1.3
0.7
0.4
D25
Fig . 5. R
Value vs . Drain Cur r e nt
3.8
3.4
3
2.6
2.2
- Normalize
1.8
D S ( o n )
VGS = 15V
1.4
R
1
0.6
0 30 60 90 120 150 180 210 240 270
Norm alize d to 0.5 I
DS(on)
I D - Amperes
D25
TJ = 150ºC
VGS = 10V
TJ = 25ºC
Fig. 6. Drain Curre nt vs . Cas e
Tem perature
90
External Lead Current Limit
80
70
60
50
40
- Amperes
D
I
30
20
10
0
-50 -25 0 25 50 75 100 125 150
T
- Degrees Centigrade
C
© 2006 IXYS All rights reserved
Page 4
IXTK 120N25P
Fig. 7. Input Admittance
210
180
150
120
90
- Amperes
D
I
60
30
0
TJ = 150ºC
º
25
-40
44.5 55.5 66.5 77.5 88.5
C
º
C
V
- Volts
G S
Fig. 9. Sour ce Cur r e n t vs .
Source-To-Drain Voltage
350
300
250
200
150
- Amperes
S
I
100
50
0
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
T
= 150ºC
J
V
S D
T
J
- Volts
= 25ºC
Fig. 8. Transconductance
110
TJ = -40ºC
100
90
80
70
60
50
- Siemens
f s
40
g
30
20
10
0
0 30 60 90 120 150 180 210
25
150
º
C
º
C
I
- A mperes
D
Fig. 10. Gate Ch ar g e
10
V
DS
= 60A
I
D
= 10m A
I
G
= 125V
9
8
7
6
5
- Volts
G S
4
V
3
2
1
0
0 20 40 60 80 100 120 140 160 180 200
Q G - nanoCoulombs
Fig. 11. Capacitance
10000
C
iss
1000
Capacitanc e - picoFarads
100
f = 1MHz
0 5 10 15 20 25 30 35 40
C
oss
C
rss
VDS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
Fig . 12. Fo r w ard - Bias
Safe Operating Area
1000
R
Limit
DS(on)
100
- Amperes
D
I
10
TJ = 175ºC
= 25ºC
T
C
1
10 100 1000
DC
V
D S
- Volts
25µs
100µs
1ms
10ms
Page 5
1.00
0.10
ºC / W
-
( t h ) J C
0.01
R
0.00
IXTK 120N25P
Fig. 13. M axim um Trans ient Th e r m al Res istance
0.1 1 10 100 1000
Pu ls e W id th - millis e c o n d s
© 2006 IXYS All rights reserved
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