Page 1
PolarHT
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTK 102N30P
V
I
D25
R
DSS
DS(on)
= 300 V
= 102 A
≤≤
≤ 33 m
≤≤
ΩΩ
Ω
ΩΩ
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
D(RMS)
I
DM
I
AR
E
AR
E
AS
dv/dt I
TJ= 25° C to 150° C 300 V
TJ= 25° C to 150° C; RGS = 1 MΩ 300 V
Continuous ±20 V
Transient ±30 V
TC= 25° C 102 A
External lead current limit 75 A
TC= 25° C, pulse width limited by T
JM
250 A
TC= 25° C60A
TC= 25° C60mJ
TC= 25° C 2.5 J
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
S
, 10 V/ns
DSS
TJ≤ 150° C, RG = 4 Ω
P
T
T
T
T
T
M
D
J
JM
stg
L
SOLD
d
TC= 25° C 700 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
1.6 mm (0.062 in.) from case for 10 s 300 ° C
Plastic body for 10 s 260 ° C
Mounting torque 1.13/10 Nm/lb.in.
Weight TO-264 10 g
TO-264 (IXTK)
G
D
S
G = Gate D = Drain
S = Source TAB = Drain
(TAB)
Features
l
International standard package
l
Unclamped Inductive Switching (UIS)
rated
l
Low package inductance
- easy to drive and to protect
Advantages
l
Easy to mount
l
Space savings
l
High power density
Symbol Test Conditions Characteristic Values
(TJ = 25° C, unless otherwise specified) Min. Typ. Max.
BV
V
I
GSS
I
DSS
DSS
GS(th)
VGS= 0 V, ID = 250 µA 300 V
VDS= VGS, ID = 500µA 2.5 5.0 V
VGS= ±20 VDC, VDS = 0 ±200 nA
VDS= V
DSS
25 µA
VGS= 0 V TJ = 125° C 250 µA
R
DS(on)
VGS= 10 V, ID = 0.5 I
D25
33 m Ω
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 2006 IXYS All rights reserved
DS99130E(12/05)
Page 2
IXTK 102N30P
Symbol Test Conditions Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min. Typ. Max.
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCS
VDS= 10 V; ID = 0.5 I
, pulse test 45 57 S
D25
7500 pF
VGS = 0 V, VDS = 25 V, f = 1 MHz 1150 pF
230 pF
30 ns
VGS = 10 V, VDS = 0.5 V
, ID = 60 A 28 ns
DSS
RG = 3.3 Ω (External) 130 ns
30 ns
224 nC
VGS= 10 V, VDS = 0.5 V
, ID = 0.5 I
DSS
D25
50 nC
110 nC
0.18° C/W
0.15 ° C/W
Source-Drain Diode Characteristic Values
(T
Symbol Test Conditions Min. Typ. Max.
= 25° C, unless otherwise specified)
J
TO-264 (IXTK) Outline
I
S
I
SM
V
SD
VGS = 0 V 102 A
Repetitive 250 A
IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
t
rr
Q
RM
IF = 25 A, -di/dt = 100 A/µs 250 ns
VR = 100 V, V
= 0 V 3.3 µC
GS
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
Page 3
IXTK 102N30P
Fig. 1. Output Char acte ris tics
º
C
@ 25
110
100
90
80
70
60
50
- Amperes
40
D
I
30
20
10
0
00.511.522.533.54
V
= 10V
GS
9V
8V
7V
6V
5V
VDS - Volts
Fig. 3. Output Char acte ris tics
º
= 10V
C
7V
6V
5V
@ 125
110
100
90
80
70
60
50
- Amperes
D
40
I
30
20
10
0
0123456789
V
GS
9V
8V
VDS - Volts
Fig. 2. Extended Output Ch aracte r is tics
º
@ 25
C
250
V
= 10V
GS
225
200
175
150
125
100
- Amperes
D
I
75
50
25
0
02468101214161820
Fig . 4. R
9V
DS(on
8V
7V
6V
5V
VDS - Volts
Norm alized to 0.5 I
)
Value vs . Junction Te m per atur e
2.8
2.6
2.4
2.2
1.8
1.6
- Normalized
1.4
1.2
DS( on)
R
0.8
0.6
0.4
VGS = 10V
2
I
= 102A
D
ID = 51A
1
-50 -25 0 25 50 75 100 125 150
T
- Degrees Centigrade
J
D25
Fig . 5. R
DS(on)
0.5 I
2.6
2.4
2.2
T
= 125ºC
2
1.8
1.6
- Normaliz ed
1.4
DS(on)
R
1.2
1
0.8
0 25 50 75 100 125 150 175 200 225 250
J
© 2006 IXYS All rights reserved
Norm alized to
Value vs . I
D25
TJ = 25ºC
ID - Amperes
D
VGS = 10V
Fig. 6. Drain Cur r e n t vs . Case
Tem perature
90
External Lead Current Limit
80
70
60
50
40
- Amperes
D
I
30
20
10
0
-50 -25 0 25 50 75 100 125 150
T
- Degrees Centigrade
C
Page 4
IXTK 102N30P
Fig. 7. Input Admittance
150
125
100
75
- Amperes
D
I
50
25
0
3.5 4 4.5 5 5.5 6 6.5 7 7.5
TJ = 125ºC
25ºC
-40ºC
VGS - Volts
Fig. 9. Sour ce Cu r r e nt vs .
Source-To-Drain Voltage
300
250
200
150
- Amperes
S
I
100
50
0
0.4 0.6 0.8 1 1.2 1.4
T
= 125ºC
J
T
J
= 25ºC
VSD - Volts
Fig. 8. Transconductance
100
90
80
TJ = -40ºC
70
25ºC
125ºC
60
50
- Siemens
40
fs
g
30
20
10
0
0 25 50 75 100 125 150 175 200
I
- Amperes
D
Fig. 10. Gate Char ge
10
V
= 150V
DS
9
I
= 51A
D
8
I
= 10m A
G
7
6
5
- Volts
G S
4
V
3
2
1
0
0 25 50 75 100 125 150 175 200 225
QG - nanoCoulombs
Fig. 11. Capacitance
10000
C
iss
1000
C
oss
Capacitance - picoFarads
100
f = 1MHz
C
rss
0 5 10 15 20 25 30 35 40
VDS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
Fig . 12. Fo r w ar d - Bias
Safe Operating Area
1000
R
Limit
DS(on)
100
- Amperes
D
I
10
1
10 100 1000
DC
TJ = 150ºC
T
25µs
100µs
1ms
10ms
VDS - Volts
= 25ºC
C
Page 5
1.00
ºC/W
-
0.10
IXTK 102N30P
Fig. 13. Maxim um Transie nt The rm al Res is tance
(th)JC
R
0.01
1 10 100 1000
Puls e Width - millis ec onds
© 2006 IXYS All rights reserved
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