Page 1
PolarHT
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTH 88N30P
IXTK 88N30P
IXTQ 88N30P
IXTT 88N30P
V
DSS
I
D25
R
DS(on)
TO-247 (IXTH)
= 300 V
= 88 A
≤≤
≤ 40 m
≤≤
ΩΩ
Ω
ΩΩ
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
D(RMS)
I
DM
I
AR
E
AR
E
AS
dv/dt I
TJ= 25° C to 150° C 300 V
TJ= 25° C to 150° C; RGS = 1 MΩ 300 V
Continuous ±20 V
Transient ±30 V
TC= 25° C88A
External lead current limit 75 A
TC= 25° C, pulse width limited by T
JM
220 A
TC= 25° C60A
TC= 25° C60mJ
TC= 25° C 2.0 J
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
S
DSS
10 V/ns
TJ≤ 150° C, RG = 4 Ω
P
T
T
T
T
T
M
D
J
JM
stg
L
SOLD
d
TC= 25° C 600 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
1.6 mm (0.062 in.) from case for 10 s 300 °C
Plastic body for 10 s 260 °C
Mounting torque 1.13/10 Nm/lb.in.
Weight TO-247 6.0 g
TO-264 10 g
TO-3P & TO-268 5.5 g
G
D
TO-264 (IXTK)
G
D
TO-3P (IXTQ)
G
D
S
TO-268 (IXTT)
G
D (TAB)
S
S
D (TAB)
(TAB)
S
D (TAB)
Symbol Test Conditions Characteristic Values
(TJ = 25° C, unless otherwise specified) Min. Typ. Max.
BV
V
I
GSS
I
DSS
DSS
GS(th)
VGS= 0 V, ID = 250 µA 300 V
VDS= VGS, ID = 250µA 2.5 5.0 V
VGS= ±20 VDC, VDS = 0 ±100 nA
VDS= V
DSS
100 µA
VGS= 0 V TJ = 125° C1mA
R
DS(on)
VGS= 10 V, ID = 0.5 I
D25
40 m Ω
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 2006 IXYS All rights reserved
G = Gate D = Drain
S = Source TAB = Drain
Features
l
International standard package
l
Unclamped Inductive Switching (UIS)
rated
l
Low package inductance
- easy to drive and to protect
Advantages
l
Easy to mount
l
Space savings
l
High power density
DS99129E(12/05)
Page 2
IXTH 88N30P IXTK 88N30P
IXTQ 88N30P IXTT 88N30P
Symbol Test Conditions Characteristic Values
(T
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
R
TO-264 0.15 ° C/W
thCS
VDS= 10 V; ID = 0.5 I
, pulse test 45 60 S
D25
VGS = 0 V, VDS = 25 V, f = 1 MHz 950 pF
VGS = 10 V, VDS = 0.5 V
, ID = 60 A 24 ns
DSS
RG = 3.3 Ω (External) 96 ns
VGS= 10 V, VDS = 0.5 V
, ID = 0.5 I
DSS
TO-247 and TO-3P 0.21 ° C/W
= 25° C unless otherwise specified)
J
Min. Typ. Max.
6300 pF
190 pF
25 ns
25 ns
180 nC
D25
44 nC
90 nC
0.21° C/W
Source-Drain Diode Characteristic Values
(T
Symbol Test Conditions Min. Typ. Max.
I
S
I
SM
V
SD
VGS = 0 V 88 A
Repetitive 220 A
IF = IS, VGS = 0 V, 1.5 V
= 25° C, unless otherwise specified)
J
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
t
rr
Q
RM
IF = 25 A, -di/dt = 100 A/µs 250 ns
VR = 100 V, VGS = 0 V 3.3 µC
Characteristic Curves
Fig. 1. Output Characteristics
º
@ 25
= 10V
7V
6V
5V
- Volts
C
90
V
80
70
60
50
40
- Amperes
D
I
30
20
10
0
00.511.5 22.533.54
GS
9V
8V
V
D S
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2
Fig. 2. Extended Output Characteristics
@ 25
º
V
8V
7V
6V
5V
D S
C
- Volts
200
V
= 10V
GS
180
160
140
120
100
80
- Amperes
D
I
60
40
20
0
02468101214161820
9V
Page 3
IXTH 88N30P IXTK 88N30P
IXTQ 88N30P IXTT 88N30P
Fig. 3. Output Characte ristics
º
@ 125
90
80
70
60
50
40
- Amperes
D
I
30
20
10
0
0123456789
V
GS
9V
8V
V
Fig . 5. R
3.4
3.2
2.8
2.6
2.4
2.2
- Normalized
1.8
1.6
D S ( on)
1.4
R
1.2
0.8
VGS = 10V
3
2
1
0 20 40 60 80 100 120 140 160 180 200
0.5 I
DS(on)
D25
C
= 10V
7V
6V
5V
- Volts
D S
Norm alize d to
Value vs . I
T
= 125ºC
J
D
TJ = 25ºC
I D - Amperes
Fig . 4. R
Norm alize d to 0.5 I
DS(on
)
Value vs . Junction Te m pe r atur e
3
2.8
2.6
2.4
2.2
1.8
1.6
- Normalized
1.4
1.2
D S ( on)
R
0.8
0.6
0.4
VGS = 10V
2
I
= 88A
D
ID = 44A
1
-50 -25 0 25 50 75 100 125 150
T
- Degrees Centigrade
J
Fig. 6. Drain Cur r e nt vs . Cas e
Tem pe rature
90
External Lead Current Lim it
80
70
60
50
40
- Amperes
D
I
30
20
10
0
-50 -25 0 25 50 75 100 125 150
T
- Degrees Centigrade
C
D25
Fig. 7. Input Admittance
160
140
120
100
80
- Amperes
D
60
I
40
20
0
4 4.5 5 5.5 6 6.5 7 7.5 8
© 2006 IXYS All rights reserved
TJ = 125ºC
25ºC
-40ºC
V
G S
- Volts
Fig. 8. Transconductance
100
90
TJ = -40ºC
80
25ºC
70
125ºC
60
50
- Siemens
40
f s
g
30
20
10
0
0 20 40 60 80 100 120 140 160 180
I
- Amperes
D
Page 4
IXTH 88N30P IXTK 88N30P
IXTQ 88N30P IXTT 88N30P
Fig. 9. Source Current vs.
Sour ce -To -Drain V oltage
280
240
200
160
120
- Amperes
S
I
80
40
0
0.4 0.6 0.8 1 1.2 1.4 1.6
T
= 125ºC
J
V
- Volts
S D
T
J
= 25ºC
Fig. 11. Capacitance
10000
C
iss
Fig. 10. Gate Charge
10
V
DS
= 44A
I
D
= 10mA
I
G
= 150V
9
8
7
6
5
- Volts
G S
4
V
3
2
1
0
0 20 40 60 80 100 120 140 160 180
Q G - nanoCoulombs
Fig . 12. Fo r w ard- Bias
Safe Ope rat in g Ar e a
1000
Limit
DS(on)
100
100µs
TJ = 150ºC
= 25ºCR
T
C
25µs
1000
Capacitance - picoFarads
100
f = 1MHz
0 5 10 15 20 25 30 35 40
V
- Volts
D S
Fig. 13. Maximum Transient Thermal Resistance
1.00
ºC / W
-
0.10
(th) J C
R
C
oss
- Amperes
D
I
10
C
rss
1
10 100 1000
DC
10ms
V
D S
1ms
- Volts
0.01
1 10 100 1000
Puls e Width - milliseconds
IXYS reserves the right to change limits, test conditions, and dimensions.
Page 5
IXTH 88N30P IXTK 88N30P
IXTQ 88N30P IXTT 88N30P
TO-247 (IXTH) Outline
1 2 3
Terminals:
1. Gate 2,4. Drain
3. Source
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
2.2 2.54 .087 .102
A
1
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
1.65 2.13 .065 .084
b
1
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
TO-3P (IXTQ) Outline
TO-268 (IXTT) Outline
Terminals:
1. Gate 2,4. Drain
3. Source
TO-264 (IXTK) Outline
© 2006 IXYS All rights reserved
Loading...