Page 1
Advance Technical Information
High Voltage
IXTH6N150
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
dv/dt IS≤ IDM, VDD ≤ V
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight 6 g
TJ= 25°C to 150°C 1500 V
TJ= 25°C to 150°C, RGS = 1MΩ 1500 V
Continuous ±20 V
Transient ±30 V
TC= 25°C6A
TC= 25°C, Pulse Width Limited by T
JM
24 A
TC= 25°C3A
TC= 25°C 500 mJ
≤ 150°C 5 V/ns
DSS,TJ
TC= 25°C 540 W
- 55 ... +150 °C
150 °C
- 55 ... +150 °C
1.6mm (0.062 in.) from Case for 10s 300 °C
Plastic Body for 10s 260 °C
Mounting Torque 1.13 / 10 Nm/lb.in.
V
I
R
D25
DSS
DS(on)
= 1500V
=6A
≤≤
≤ 3.5
≤≤
ΩΩ
Ω
ΩΩ
TO-247
G
D
S
Tab
G = Gate D = Drain
S = Source Tab = Drain
Features
z
International Standard Package
z
Fast Intrinsic Diode
z
Avalanche Rated
z
Molding Epoxies meet UL 94 V-0
Flammability Classification
Advantages
z
Easy to Mount
z
Space Savings
z
High Power Density
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BV
V
I
GSS
I
DSS
DSS
GS(th)
VGS= 0V, ID = 250μA 1500 V
VDS= VGS, ID = 250μA 3.0 5.0 V
VGS= ±20V, VDS = 0V ±100 nA
VDS= V
, VGS = 0V 25 μA
DSS
TJ = 125°C 250 μA
R
DS(on)
© 2010 IXYS CORPORATION, All Rights Reserved
VGS= 10V, ID = 0.5 • I
, Note 1 3.5 Ω
D25
Applications
z
High Voltage Power Supplies
z
Capacitor Discharge Applications
z
Pulse Circuits
DS100233(01/10)
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IXTH6N150
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
g
C
C
C
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
R
R
fs
iss
oss
rss
g(on)
gs
gd
thJC
thCS
VDS = 20V, ID = 0.5 • I
, Note 1 4.0 6.5 mS
D25
2230 pF
VGS = 0V, VDS = 25V, f = 1MHz 170 pF
64 pF
Resistive Switching Times
= 10V, VDS = 0.5 • V
V
GS
DSS
RG = 3Ω (External)
, ID = 0.5 • I
D25
22 ns
20 ns
50 ns
38 ns
67 nC
VGS = 10V, VDS = 0.5 • V
, ID = 0.5 • I
DSS
D25
12 nC
36 nC
0.23 °C/W
0.21 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
I
S
I
SM
V
SD
t
rr
I
RM
Q
RM
VGS = 0V 6 A
Repetitive, Pulse Width Limited by T
JM
24 A
IF = 6A, VGS = 0V, Note 1 1.3 V
= 3A, -di/dt = 100A/μs
I
F
1.5 μs
12 A
VR = 100V, VGS = 0V
9 μC
TO-247 (IXTH) Outline
1 2 3
e
Terminals: 1 - Gate 2 - Drain
Dim. Millimeter Inches
3 - Source
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
2.2 2.54 .087 .102
A
1
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b
1.65 2.13 .065 .084
1
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
∅ P
Note: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Page 3
IXTH6N150
V
V6V
V
V
V
V
Fig. 1. Ou tput Char acter i st i cs @ TJ = 25ºC
6
5
4
3
- Amperes
D
I
2
1
0
0 2 4 6 8 1012141618
VDS - Volts
V
= 10V
GS
7
5
Fig. 3. Ou tp ut Character i stics @ TJ = 125ºC
6
5
4
3
- Amperes
D
I
2
1
V
= 10V
GS
7V
6V
5
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
10
9
8
7
6
5
- Amperes
4
D
I
3
2
1
0
0 5 10 15 20 25 30 35
VDS - Volts
Fig. 4. R
Normalized to ID = 3A Value vs.
DS(on)
V
= 10V
GS
7
6
5
Junction Temperature
3.4
V
GS
= 10V
I D = 6A
I D = 3A
- Normalized
DS(on)
R
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0
0 5 10 15 20 25 30 35 40
VDS - Volts
Fig. 5. R
Normalized to ID = 3A Value vs.
DS(on)
Drain Current
2.8
V
= 10V
GS
2.6
2.4
2.2
2.0
1.8
- Normalized
1.6
DS(on)
1.4
R
1.2
1.0
0.8
012345678910
TJ = 125ºC
TJ = 25ºC
ID - Amperes
© 2010 IXYS CORPORATION, All Rights Reserved
0.2
-50 -25 0 25 50 75 100 125 150
TJ - Degrees Centigrade
Fig. 6. Maximum Drain Curren t vs.
Case T emper atu r e
7
6
5
4
3
- Amperes
D
I
2
1
0
-50-250 255075100125150
TC - Degrees Centigrade
Page 4
IXTH6N150
Fig. 7. Input Admittance
9
8
7
6
5
4
- Amperes
D
I
3
2
1
0
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
T
= 125ºC
J
25ºC
- 40ºC
VGS - Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
20
18
16
14
12
10
- Amperes
S
I
8
T
6
4
2
0
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
= 125ºC
J
VSD - Volts
TJ = 25ºC
Fig. 8. Transconductance
12
T
= - 40ºC
J
10
8
6
- Siemens
f s
g
4
2
0
0123456789
25ºC
125ºC
ID - Amperes
Fig. 10. Gate Charge
10
9
V
= 750V
DS
= 3A
I
D
8
I
= 10mA
G
7
6
- Volts
5
GS
V
4
3
2
1
0
0 10203040506070
QG - NanoCou lombs
Fig. 11. Capacitance
10,000
= 1 MHz
f
C
1,000
100
Capacitance - PicoFarads
10
0 5 10 15 20 25 30 35 40
iss
C
oss
C
rss
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Fig. 12. Forward-Bias Safe Operating Area
100
R
Limit
DS(on)
10
- Amperes
D
I
1
TJ = 150ºC
= 25ºC
T
C
Single Pulse
0.1
10 100 1,000 10,000
DC
VDS - Volt s
25µs
100µs
1ms
10ms
Page 5
IXTH6N150
Fig. 13. Maximum Tr an si en t Thermal Imped an ce
1.000
0.100
- ºC / W
(th)JC
Z
0.010
0.001
0.00001 0.0001 0.001 0.01 0.1 1
Pulse Width - Second
© 2010 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_6N150 (5P)1-19-10
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