Page 1
High Voltage
Power MOSFETs
IXTH 3N120
V
I
DSS
D25
=1200 V
=3 A
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt
Preliminary Data Sheet
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt I
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight 6 g
T
= 25°C to 150°C 3N120 1200 V
J
T
= 25°C to 150°C; RGS = 1 MΩ 3N120 1200 V
J
3N110 1100 V
3N110 1100 V
Continuous ±20 V
Transient ±30 V
T
= 25°C3A
C
T
= 25°C, pulse width limited by T
C
T
= 25°C3A
C
T
= 25°C 20mJ
C
JM
12 A
700 mJ
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
S
T
≤ 150°C, RG = 2 Ω
J
T
= 25°C 150 W
C
, 5 V/ns
DSS
-55 to +150 °C
150 °C
-55 to +150 °C
1.6 mm (0.063 in) from case for 10 s 300 °C
Mounting torque 1.13/10 Nm/lb.in.
V
DS(on)
= 4.5 Ω
TO-247
G
D
S
D (TAB)
G = Gate D = Drain
S = Source TAB = Drain
Features
z
International standard packages
z
Low R
z
DS (on)
Rated for unclamped Inductive load
Switching (UIS)
z
Molding epoxies meet UL 94 V-0
flammability classification
Advantages
z
Easy to mount
z
Space savings
z
High power density
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
© 2003 IXYS All rights reserved
VGS= 0 V, ID = 1 mA 1200 V
VDS= VGS, I
V
= ±20 V
GS
VDS= 0.8 V
VGS= 0 V T
= 250 µA 2.5 4.5 V
D
DC
DSS
VGS= 10 V, ID = 0.5 I
Note 1
J
, V
= 0 ±100 nA
DS
T
= 25°C25µA
J
= 125°C1mA
J
D25
min. typ. max.
4.5 Ω
DS99025(03/03)
Page 2
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
J
min. typ. max.
IXTH 3N120
TO-247 AD Outline
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
VDS= 10 V; ID = 0.5 • I
, Note 1 1.5 2.2 S
D25
1050 1300 pF
VGS= 0 V, VDS = 25 V, f = 1 MHz 100 125 pF
25 50 pF
17 ns
VGS= 10 V, VDS = 0.5 • V
R
= 4.7 Ω (External), 32 ns
G
, ID = 0.5 • I
DSS
D25
15 ns
18 ns
39 nC
VGS= 10 V, VDS = 0.5 • V
, ID = 0.5 • I
DSS
D25
9nC
22 nC
0.25 K/W
0.8 K/W
Source-Drain Diode Characteristic Values
(T
= 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
I
SM
VGS= 0 V 3 A
Repetitive; pulse width limited by T
J
JM
12 A
1 2 3
Terminals: 1 - Gate 2 - Drain
Dim. Millimeter Inches
3 - Source Tab - Drain
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
2.2 2.54 .087 .102
A
1
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b
1.65 2.13 .065 .084
1
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
V
SD
t
rr
IF = IS, VGS = 0 V, Note 1 1.5 V
IF = I
, -di/dt = 100 A/µs, V
S
= 100 V 700 ns
R
Notes: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
Page 3
IXTH 3N120
5
4
3
TJ = 25OC
V
= 9V
GS
8V
7V
6V
4.0
3.5
3.0
2.5
= 125OC
T
J
V
= 9V
GS
8V
7V
6V
2.0
2
- Amperes
D
I
1
0
02468101214161820
VDS - Volts
5V
- Amperes
1.5
D
I
1.0
0.5
0.0
036912151821242730
VDS - Volts
Fig.1 Output Characteristics @ Tj = 25°C Fig. 2 Output Characteristics @ Tj = 125°C
- Normalized
DS(ON)
R
2.50
2.25
2.00
1.75
1.50
1.25
1.00
VGS = 10V
= 125OC
T
J
TJ = 25OC
2.8
= 10V
V
GS
2.5
2.2
1.9
ID = 3A
- Normalized
ID =1.5A
1.6
DS(ON)
R
1.3
5V
4V
0.75
012345
ID - Amperes
Fig. 3 R
vs. Drain Current Fig. 4 Temperature Dependence of Drain
DS(on)
1.0
25 50 75 100 125 150
TJ - Degrees C
to Source Resistance
4.0
3.5
3.0
2.5
2.0
- Amperes
1.5
D
I
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
TC - Degrees C
3.0
2.5
2.0
1.5
- Amperes
D
1.0
I
TJ = 125oC
0.5
0.0
3.5 4.0 4.5 5.0 5.5 6.0
VGS - Volts
TJ = 25oC
Fig. 5 Drain Current vs. Case Temperature Fig. 6 Drain Current vs Gate Source Voltage
© 2003 IXYS All rights reserved
Page 4
IXTH 3N120
12
10
V
I
= 600V
DS
= 1.5A
D
1000
8
6
- Volts
GS
V
4
100
Capacitance - pF
2
0
0 102030405060
10
0 5 10 15 20 25 30 35 40
Gate Charge - nC
Fig. 7 Gate Charge Characteristic Curve Fig. 8 Capacitance Curves
5
= 0V
V
GS
4
3
TJ = 125OC
2
- Amperes
D
I
T
J
= 25OC
Ciss
Coss
Crss
VDS - Volts
f = 1MHz
1
0
0.2 0.4 0.6 0.8 1.0
VSD - Volts
Fig. 9 Drain Current vs Drain to Source Voltage
1.00
0.10
- K/W
JC
0.01
R(th)
0.00
10
-4
10
-3
10
-2
10
-1
Pulse Width - Seconds
Fig.10 Transient Thermal Impedance
10
0
Single Pulse
10
1
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
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