Page 1
Preliminary Technical Information
TrenchT2TM Power
IXTH260N055T2
MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GSM
I
D25
I
LRMS
I
DM
I
A
E
AS
P
D
T
J
T
JM
T
stg
T
L
T
sold
M
d
Weight 6 g
TJ= 25°C to 175°C55 V
TJ= 25°C to 175°C, RGS = 1MΩ 55 V
Transient ± 20 V
TC= 25°C 260 A
Lead Current Limit, RMS 160 A
TC= 25°C, pulse width limited by T
JM
780 A
TC= 25°C 100 A
TC= 25°C 600 mJ
TC= 25°C 480 W
-55 ... +175 °C
175 °C
-55 ... +175 °C
1.6mm (0.062in.) from case for 10s 300 °C
Plastic body for 10 seconds 260 °C
Mounting torque 1.13 / 10 Nm/lb.in.
V
I
R
D25
DSS
DS(on)
= 55V
= 260A
≤≤
3.3m
≤
≤≤
ΩΩ
Ω
ΩΩ
TO-247
G
D
S
(TAB)
G = Gate D = Drain
S = Source TAB = Drain
Features
z
International standard package
z
175°C Operating Temperature
z
High current handling capability
z
Avalanche rated
z
Low R
DS(on)
Advantages
z
Easy to mount
z
Space savings
z
High power density
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
BV
V
I
GSS
I
DSS
DSS
GS(th)
VGS= 0V, ID = 250μA 55 V
VDS= VGS, ID = 250μA 2.0 4.0 V
VGS= ± 20V, VDS = 0V ±200 nA
VDS= V
DSS
5 μA
VGS= 0V TJ = 150°C 150 μA
R
DS(on)
© 2008 IXYS CORPORATION, All rights reserved
VGS= 10V, ID = 50A, Notes 1, 2 3.3 mΩ
Applications
z
Automotive
- Motor Drives
- 12V Battery
- ABS Systems
z
DC/DC Converters and Off-line UPS
z
Primary- Side Switch
z
High Current Switching Applications
DS100078(11/08)
Page 2
IXTH260N055T2
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
g
V
fs
C
iss
VGS = 0V, VDS = 25V, f = 1MHz 1460 pF
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
V
Q
gs
Q
gd
R
thJC
R
thCH
= 10V, ID = 60A, Note 1 55 94 S
DS
10.8 n F
215 p F
20 ns
Resistive Switching Times
27 ns
VGS = 10V, VDS = 0.5 • V
36 ns
R
= 2Ω (External)
G
24 ns
, ID = 100A
DSS
140 nC
= 10V, VDS = 0.5 • V
GS
, ID = 0.5 • I
DSS
D25
52 nC
32 nC
0.31 °C/W
0.21 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
IS VGS = 0V 260 A
ISM Repetitive, Pulse width limited by T
JM
1000 A
VSD IF = 100A, VGS = 0V, Note 1 1.3 V
TO-247 (IXTH) Outline
1 2 3
e
Terminals: 1 - Gate 2 - Drain
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
2.2 2.54 .087 .102
A
1
A
2.2 2.6 .059 .098
2
b 1.0 1.4 .040 .055
b
1.65 2.13 .065 .084
1
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
∅ P
t
rr
I
RM
Q
RM
60 ns
= 130A, VGS = 0V
I
F
-di/dt = 100A/μs
V
= 27V
R
102 nC
3.4
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Page 3
IXTH260N055T2
V5V6V
Fig. 1. Output Characteristics
@ 25ºC
260
240
220
200
180
160
140
120
- Amperes
D
100
I
80
60
40
20
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
V
= 15V
GS
10V
9V
8V
VDS - Volts
7V
6V
5V
Fig. 3. Output Characteristics
@ 150ºC
260
240
220
200
180
160
140
120
- Amperes
D
100
I
80
60
40
20
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V
= 15V
GS
10V
9V
8V
VDS - Volts
7
Fig. 2. Extended Output Characteristics
@ 25ºC
350
V
= 15V
GS
10V
300
9V
250
200
150
- Amperes
D
I
100
50
0
0.0 0. 4 0.8 1.2 1.6 2. 0 2.4 2.8 3.2 3. 6
8V
7V
6V
5V
VDS - Volts
Fig. 4. R
Normalized to ID = 130A Value
DS(on)
vs. Juncti o n Tem perature
2.2
V
= 10V
2.0
1.8
1.6
1.4
- Normalized
1.2
DS(on)
R
1.0
0.8
0.6
GS
I D = 260A
I D = 130A
-50 -25 0 25 50 75 100 125 150 175
TJ - De grees Centigrade
Fig. 5. R
2.2
2.1
2.0
1.9
1.8
1.7
1.6
1.5
- Normalized
1.4
1.3
DS(on)
R
1.2
1.1
1.0
0.9
0.8
V
= 10V
GS
15V
0 50 100 150 200 250 300 350
Normalized to ID = 130A Value
DS(on)
vs. Drain Current
- - - -
ID - Amperes
TJ = 175ºC
TJ = 25ºC
Fig. 6. Drain Current vs. Case Temperature
180
160
140
120
100
80
- Amperes
D
I
60
40
20
0
External Lead Current Limit
-50 -25 0 25 50 75 100 125 150 175 200
TC - Degrees Centigrade
© 2008 IXYS CORPORATION, All rights reserved
Page 4
IXTH260N055T2
Fig. 7. Input Admittance
200
180
160
140
120
100
- Amperes
80
D
I
60
40
20
0
3.0 3.5 4. 0 4.5 5.0 5.5 6.0 6.5
T
= 150ºC
J
25ºC
- 40ºC
VGS - Volts
Fig. 9. Forward Voltage Drop of
Intrinsi c Di o d e
360
320
280
240
200
160
- Amperes
S
I
120
80
40
0
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
T
= 150ºC
J
VSD - Volts
T
J
= 25ºC
Fig. 8. Transconductance
140
120
100
80
- Siemens
60
f s
g
40
20
0
0 20 40 60 80 100 120 140 160 180 200 220
T
= - 40ºC
J
ID - Amperes
25ºC
150ºC
Fig. 10. Gate Charge
10
V
= 28V
DS
9
I
= 130A
D
8
I
= 10mA
G
7
6
5
- Volts
GS
4
V
3
2
1
0
0 102030405060708090100110120130140
QG - NanoCoulombs
Fig. 11. Capacitance
100,000
= 1 MHz
f
C
10,000
1,000
iss
C
oss
Capacitance - PicoFarads
C
rss
100
0 5 10 15 20 25 30 35 40
VDS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
Fig. 12. Forward-Bias Safe Operating Area
1,000
- Amperes
D
I
R
Limit
DS(on)
100
External Lead Current Limit
10
TJ = 175ºC
T
= 25ºC
C
Single Pulse
1
1 10 100
VDS - Volts
IXYS REF: T_260N055T2(V6)12-15-08-B
25µs
100µs
1ms
10ms
100ms
DC
Page 5
IXTH260N055T2
Fig. 13. R esi stive Turn-on
Rise Ti me vs. Junction Temperatu r e
40
38
36
34
32
- Nanoseconds
r
t
30
28
26
24
22
20
18
16
14
12
I D = 200A
I D = 100A
25 35 45 55 65 75 85 95 105 115 125
R
V
V
= 2Ω
G
= 10V
GS
= 28V
DS
TJ - Degrees Centigrade
Fig. 15. R esi stive Turn-on
Switching Times vs. Gate Resi stance
160
140
120
100
t
r
TJ = 125ºC, VGS = 10V
= 28V
V
DS
I D = 200A, 100A
80
t
d(on)
- - - -
Fig. 14. R esi stive Turn-on
Rise Time vs. Drain Current
32
R
= 2Ω
V
V
G
= 10V
GS
= 28V
DS
- Nanoseconds
r
t
31
30
29
28
27
26
25
24
TJ = 125ºC
TJ = 25ºC
40 60 80 100 120 140 160 180 200
ID - Amperes
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
90
80
t
70
d(on)
- Nanoseconds
60
50
55
t
50
45
40
35
f
RG = 2Ω, VGS = 10V
= 28V
V
DS
I D = 200A, 100A
t
d(off)
- - - -
60
55
50
t
d(off)
45
- Nanoseconds
40
60
- Nanoseconds
r
t
40
20
0
2 4 6 8 10 12 14 16
RG - Ohms
Fig. 17. R esisti ve Turn-off
Switching Times vs. Drain Current
44
t
40
36
32
28
24
- Nanoseconds
f
20
t
16
12
8
40 60 80 100 120 140 160 180 200
f
RG = 2Ω, VGS = 10V
= 28V
V
DS
TJ = 125ºC
TJ = 25ºC
ID - Amperes
t
d(off)
- - - -
40
30
20
10
30
- Nanoseconds
f
t
25
20
15
25 35 45 55 65 75 85 95 105 115 125
35
30
25
20
TJ - Degrees Centigrade
Fig. 18. R esi stive Turn-off
Switching Times vs. Gate Resi stance
65
60
55
t
d(off)
50
- Nanoseconds
45
40
35
30
25
20
275
t
250
225
200
175
150
125
- Nanoseconds
100
f
t
75
50
25
0
f
TJ = 125ºC, VGS = 10V
= 28V
V
DS
I D = 100A, 200A
2 4 6 8 10 12 14 16
t
d(off)
- - - -
RG - Ohms
240
220
200
180
160
140
120
100
80
60
40
20
t
d(off)
- Nanoseconds
© 2008 IXYS CORPORATION, All rights reserved
Page 6
IXTH260N055T2
Fig. 19. Maxim u m T r ansi en t Thermal Impedance
1.000
0.100
- ºC / W
(th)JC
Z
0.010
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: T_260N055T2(V6)12-15-08-B
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