Datasheet ixth130n20t Datasheet

Preliminary Technical Information

TrenchHV

TM

IXTH130N20T

Power MOSFET

N-Channel Enhancement Mode Avalanche Rated

Symbol Test Conditions Maximum Ratings

V

DSS

V

DGR

V

GSM

I

D25

I

LRMS

I

DM

I

A

E

AS

dv/dt IS≤ IDM, VDD ≤ V

P

d

T

J

T

JM

T

stg

T

L

T

SOLD

M

d

Weight 6g

TJ= 25°C to 175°C 200 V TJ= 25°C to 175°C; RGS = 1MΩ 200 V

Transient ± 30 V

TC= 25°C 130 A Lead Current Limit, RMS 75 A TC= 25°C, pulse width limited by T

JM

320 A

TC= 25°C4A TC= 25°C 1.0 J

≤ 175°C 10 V/ns

DSS, TJ

TC= 25°C 830 W

-55 ... +175 °C 175 °C

-55 ... +175 °C

1.6mm (0.062 in.) from case for 10s 300 °C Plastic body for 10 seconds 260 °C

Mounting torque 1.13/10 Nm/lb.in

V I

D25

R

DSS

DS(on)

= 200V = 130A

≤≤

≤

16m

≤≤

ΩΩ

Ω

ΩΩ

TO-247

G

D

S

G = Gate D = Drain S = Source TAB = Drain

(TAB)

Features

z

Unclamped Inductive Switching (UIS) rated

z

Low package inductance

- easy to drive and to protect

z

175 °C Operating Temperature

Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max.

BV

V

I

GSS

I

DSS

GS(th)

VGS= 0V, ID = 250μA 200 V

VDS= VGS, ID = 1mA 2.5 5.0 V

VGS= ± 20V, VDS = 0V ± 200 nA

VDS= V

DSS

25 μA

VGS= 0V TJ = 150°C 500 μA

R

DS(on)

VGS= 10V, ID = 0.5 • I

, Notes 1 16 mΩ

D25

Advantages

z

Easy to mount

z

Space savings

z

High Power density

Applications

z

DC-DC converters

z

Uninterruptible power supplies (UPS)

z

Switched-mode and resonant-mode power supplies

z

AC motor control

z

High speed power switching applications

z

DC choppers

z

Battery chargers

DS99846(06/07)

IXTH130N20T

Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max.

g

C

t

d(on)

t

r

t

d(off)

t

f

Q

R

fs

iss

oss

rss

g(on)

gs

gd

thJC

thCS

VDS= 10V; ID = 60A, Note 1 70 120 S

8800 pF

VGS = 0V, VDS = 25V, f = 1MHz 970 pF

122 pF

Resistive Switching, 25

VGS = 10V, VDS = 0.5 • V

°°

°C 25 ns

°°

, ID = 0.5 • I

DSS

D25

18 ns

RG = 2.0Ω (External) 57 ns

22 ns

150 nC

VGS= 10V, VDS = 0.5 • V

, ID = 25A 44 nC

DSS

42 nC

0.18 °C/W

0.21 °C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max.

I

S

I

SM

V

SD

t

rr

VGS = 0V 130 A

Pulse width limited by T

JM

320 A

IF = 50A, VGS = 0V, Note 1 1.0 V

IF = 65A, -di/dt = 100A/μs 150 ns

VR = 100V, VGS = 0V

TO-247 Outline

1 2 3

Terminals: 1 - Gate 2 - Drain

Dim. Millimeter Inches

A 4.7 5.3 .185 .209 A A

b 1.0 1.4 .040 .055 b b22.87 3.12 .113 .123

C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177

∅P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC

3 - Source Tab - Drain

Min. Max. Min. Max.

2.2 2.54 .087 .102

1

2.2 2.6 .059 .098

2

1.65 2.13 .065 .084

1

∅ P

e

Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2 %;

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice.

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

IXTH130N20T

Fig. 1. Output Characteristics

@ 25ºC

130 120 110 100

90 80 70 60

- Amperes

D

50

I

40 30 20 10

0

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2

V

GS

8V 7V

VDS - Volts

= 10V

6V

5V

Fig. 3. Output Characteristics

@ 150ºC

130 120 110 100

90 80 70 60

- Amperes

D

50

I

40 30 20 10

0

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6

V

GS

8V 7V

VDS - Volts

= 10V

6V

5V

Fig. 2. Extended Output Characteristics

@ 25ºC

280

V

= 10V

GS

9V

240

8V

200

160

120

- Amperes

D

I

80

40

0

0 2 4 6 8101214161820

7V

6V

5V

VDS - Volts

Fig. 4. R

Normalized to ID = 65A Value

DS(on)

vs. Junc tion Temperature

3.5 V

= 10V

GS

3.0

2.5

2.0

- Normalized

1.5

DS(on)

R

1.0

0.5

-50 -25 0 25 50 75 100 125 150 175

I D = 130A

I D = 65A

TJ - Degrees Centigrade

Fig. 5. R

Normalize d to ID = 65A Value

DS(on)

vs. Drain Current

4.0

V

= 10V

GS

3.5

3.0

2.5

- Normalized

2.0

DS(on)

R

1.5

1.0

0.5 0 40 80 120 160 200 240 280

ID - Amperes

TJ = 175ºC

TJ = 25ºC

Fig. 6. Drain Current v s . Case Temperature

90

80

70

60

50

40

- Amperes

D

I

30

20

10

Exter nal Lead Current Limit

0

-50 -25 0 25 50 75 100 125 150 175

TC - Degrees Centigr ade

IXTH130N20T

s

Fig. 7. Input Admittance

160

140

120

T

= 150ºC

J

100

80

- Amperes

D

I

60

40

20

0

3.4 3.8 4.2 4.6 5 5.4 5.8 6.2 6.6

25ºC

- 40ºC

VGS - Volts

Fig. 9. Forward Voltage Drop of

Int rinsic D iode

300

250

200

150

- Amperes

S

I

100

50

0

0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3

T

J

= 150ºC

TJ = 25ºC

VSD - Volts

Fig. 8. Transconductance

180

160

140

120

100

- Siemens

80

f s

g

60

40

20

0

0 20 40 60 80 100 120 140 160 180

ID - Amperes

T

J

= - 40º C

25ºC

150ºC

Fig. 10. Gate Charge

10

V

9 8 7 6 5

- Volts

GS

4

V

3 2 1 0

0 15 30 45 60 75 90 105 120 135 150

= 100V

DS

I

= 25A

D

I

= 10mA

G

QG - NanoCoulombs

Fig. 11. Capacitance

100,000

f = 1 MHz

10,000

1,000

Capacitance - PicoFarad

100

0 5 10 15 20 25 30 35 40

VDS - Volts

IXYS reserves the right to change limits, test conditions, and dimensions.

Fig. 12. Maximum Transient Thermal

Impedance

1.00

C

iss

C

oss

C

rss

0.10

- ºC / W

(th)JC

Z

0.01

0.00

0.00001 0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

IXTH130N20T

s

Fig. 13. Resistiv e Turn-on

Rise Time vs. Junction Temperature

20

R

19 18 17 16 15 14

- Nanosecond

r

t

13 12 11 10

25 35 45 55 65 75 85 95 105 115 125

I D = 65A

I D = 130A

G

V

GS

V

DS

= 2

= 15V = 100V

TJ - Degrees Centigrade

Fig. 15. Resistive Turn-on

Switching Times vs. Gate Resistance

45

t

40

35

30

25

- Nano second

r

t

20

15

10

r

TJ = 125ºC, VGS = 15V V

DS

2345678910

= 100V

t

- - - -

d(on)

I D = 130A, 65A

RG - Ohms

Fig. 14. Resistiv e Turn-on

Rise Time vs. Drain Current

20

Ω

19 18 17 16 15 14

- Nanose cond

r

t

13 12 11 10

R

= 2

Ω

G

= 15V

V

GS

= 100V

V

DS

30 40 50 60 70 80 90 100 110 120 130

TJ = 25ºC

TJ = 125ºC

ID - Amperes

Fig. 16. Resistiv e Turn-off

Switching Times vs. Junction Temperature

30

29

t

d ( o n )

28

- Nano second

27

26

25

24

23

25 24 23 22 21 20 19 18

- Nanoseconds

f

17

t

16 15 14 13

25 35 45 55 65 75 85 95 105 115 125

t

f

RG = 2Ω, VGS = 15V V

= 100V

DS

I D = 65A

t

d(off)

I D = 130A

- - - -

I D = 130A

TJ - Degrees Centigr ade

80

75

t

d ( o f f )

70

- Nanoseconds

65

60

55

50

Fig. 17. Resistiv e Turn-off

Switching Times vs. Drain Current

28

t

26

24

22

20

18

- Nano second

f

t

16

14

12

30 40 50 60 70 80 90 100 110 120 130

f

RG = 2Ω, VGS = 15V V

= 100V

DS

t

- - - -

d(off)

TJ = 125ºC

TJ = 25ºC

ID - Amperes

90

85

t

d ( o f f )

80

75

- Nano second

70

65

60

55

50

90

80

70

60

50

40

- Nanoseconds

f

t

30

20

10

2345678910

Fig. 18. Resistiv e Turn-off

Switching Times vs. Gate Resistance

t

f

TJ = 125ºC, VGS = 15V V

DS

t

d(off)

= 100V

I D = 65A, 130A

- - - -

RG - Ohms

IXYS REF: T_130N20T(8W) 06-07-07

200

180

160

140

120

100

80

60

40

d ( o f f )

t

- Nanoseconds