Page 1
Power MOSFET, Avalanche Rated
High Voltage
Preliminary Data Sheet
IXTH 12N120
V
DSS
I
D (cont)
R
DS(on)
= 1200 V
= 12 A
= 1.4
Ω Ω
Ω
Ω Ω
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
P
D
T
J
T
JM
T
stg
M
d
TJ= 25°C to 150°C 1200 V
TJ= 25°C to 150°C; RGS = 1 MΩ 1200 V
Continuous ±30 V
Transient ±40 V
TC= 25°C12A
TC= 25°C, pulse width limited by T
JM
48 A
12 A
TC= 25°C30mJ
TC= 25°C 1.0 J
TC= 25°C 500 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
Mounting torque 1.13/10 Nm/lb.in.
Weight 6g
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
TO-247 AD
G = Gate, D = Drain,
S = Source, TAB = Drain
Features
z
International standard package
JEDEC TO-247 AD
z
Low R
z
Rugged polysilicon gate cell structure
z
Fast switching times
HDMOSTM process
DS (on)
D (TAB)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
© 2004 IXYS All rights reserved
VGS= 0 V, ID = 1 mA 1200 V
VDS= VGS, ID = 250 µA35V
VGS= ±30 VDC, VDS = 0 ±100 nA
VDS= V
VGS= 0 V TJ = 125°C3mA
DSS
VGS= 10 V, ID = 0.5 • I
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
TJ = 25°C25µA
D25
1.4 Ω
Applications
z
Switch-mode and resonant-mode
power supplies
z
Motor controls
z
Uninterruptible Power Supplies (UPS)
z
DC choppers
Advantages
z
Easy to mount with 1 screw
(isolated mounting screw hole)
z
Space savings
z
High power density
DS98937E(04/04)
Page 2
IXTH 12N120
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
VDS= 20 V; ID = 0.5 I
VGS= 0 V, VDS = 25 V, f = 1 MHz 280 pF
VGS= 10 V, VDS = 0.5 • V
RG = 1.5 Ω (External) 35 ns
VGS= 10 V, VDS = 0.5 • V
, pulse test 6 10 S
D25
3400 pF
105 pF
24 ns
DSS
, 0.5 I
D25
25 ns
17 ns
95 nC
, ID = 0.5 I
DSS
D25
22 nC
50 nC
0.25 K/W
0.25 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
I
SM
V
SD
VGS= 0 V 12 A
Repetitive; pulse width limited by T
JM
48 A
IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
TO-247 AD Outline
1 2 3
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
2.2 2.54 .087 .102
A
1
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b
1.65 2.13 .065 .084
1
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
t
rr
IF = IS, -di/dt = 100 A/µs, VR = 100 V 850 ns
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 6,683,344
Page 3
d
d
IXTH 12N120
Fig. 1. Output Characte ristics
@ 25
º
12
11
10
9
8
7
6
5
- Amperes
D
I
4
3
2
1
0
024681012141618
V
GS
8V
7.5V
V
D S
= 10V
- Volts
C
7V
6.5V
6V
Fig. 3. Output Characte ristics
@ 125
12
11
10
9
8
7
6
- Amperes
5
D
I
4
3
2
1
0
0 4 8 1216202428323640
V
8V
7V
V
GS
D S
C
º
= 10V
- Volts
6.5V
6V
5.5V
5V
Fig. 2. Exte nde d Output Characte r is tics
@ 25
º
20
18
16
14
12
10
8
- Amperes
D
I
6
4
2
0
0 3 6 9 12 15 18 21 24 27 30
Fig . 4. R
DS(on
)
C
V
= 10V
GS
8V
V
- Volts
D S
Nor m alized to 0.5 I
Value vs. Junction Tem perature
3.1
- Normalize
D S ( o n )
R
2.8
2.5
2.2
1.9
1.6
1.3
0.7
0.4
VGS = 10V
I
= 12A
D
I
= 6A
D
1
-50 -25 0 25 50 75 100 125 150
T
- Degrees Centigrade
J
6.5V
7V
6.5V
6V
D25
Fig . 5. R
0.5 I
2.8
2.6
VGS = 10V
2.4
2.2
2
1.8
- Normalize
1.6
1.4
D S ( o n )
R
1.2
1
0.8
0 2 4 6 8 101214161820
Norm alized to
DS(on)
Value vs. I
D25
T
= 125ºC
J
T
J
I D - Amperes
= 25ºC
Fig. 6. Drain Current vs. Cas e
D
14
12
10
8
6
- Amperes
D
I
4
2
0
-50 -25 0 25 50 75 100 125 150
Tem pe rature
T
- Degrees Centigrade
C
© 2004 IXYS All rights reserved
Page 4
IXTH 12N120
W
Fig. 7. Input Admittance
16
14
12
10
8
- Amperes
D
6
I
4
2
0
4.555.566.577.5
TJ = 125ºC
25ºC
-40ºC
V
G S
- Volts
Fig. 9. Source Cur r e nt vs .
Source-To-Drain Voltage
36
33
30
27
24
21
18
- Amperes
15
S
I
12
9
6
3
0
0.40.50.60.70.80.9 1
T
= 125ºC
J
V
S D
- Volts
T
J
= 25ºC
Fig. 8. Transconductance
20
18
16
14
12
10
- Siemens
8
f s
g
6
4
2
0
TJ = -40ºC
25ºC
125ºC
024681012141618
I
- Amperes
D
Fig. 10. Gate Charge
10
9
V
= 600V
DS
8
7
6
5
- Volts
G S
4
V
3
2
1
0
= 6A
I
D
= 10m A
I
G
0 1020 304050607080 90100
Q G - nanoCoulombs
Fig. 11. Capacitance
10000
f = 1MHz
C
iss
1000
C
oss
100
C
Capacitance - picoFar ads
10
0 5 10 15 20 25 30 35 40
V
- Volts
D S
rss
IXYS reserves the right to change limits, test conditions, and dimensions.
Fig. 12. Maximum Transient Thermal
Resistance
1.00
C /
º
-
0.10
( t h ) J C
R
0.01
1 10 100 1000
Pulse Width - milliseconds
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