Page 1
V
DSS
I
D25
R
DS(on)
MegaMOSTMFET
IXTH / IXTM 11N80 800 V 11 A 0.95
IXTH / IXTM 13N80 800 V 13 A 0.80
N-Channel Enhancement Mode
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
P
D
T
J
T
JM
T
stg
M
d
Weight TO-204 = 18 g, TO-247 = 6 g
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
TJ= 25°C to 150°C 800 V
TJ= 25°C to 150°C; RGS = 1 MΩ 800 V
Continuous ±20 V
Transient ±30 V
TC= 25°C 11N80 11 A
13N80 13 A
TC= 25°C, pulse width limited by TJM11N80 44 A
13N80 52 A
TC= 25°C 300 W
-55 ... +150 °C
150 ° C
-55 ... +150 °C
Mounting torque 1.13/10 Nm/lb.in.
TO-247 AD (IXTH)
D (TAB)
TO-204 AA (IXTM)
G
G = Gate, D = Drain,
S = Source, TAB = Drain
Features
●
International standard packages
●
Low R
●
Rugged polysilicon gate cell structure
●
Low package inductance (< 5 nH)
HDMOSTM process
DS (on)
- easy to drive and to protect
●
Fast switching times
Ω Ω
Ω
Ω Ω
ΩΩ
Ω
ΩΩ
Symbol Test Conditions Characteristic Values
= 25°C, unless otherwise specified)
(T
J
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: 408-982-0700 Fax: 408-496-0670
VGS= 0 V, ID = 3 mA 800 V
VDS= VGS, ID = 250 µA 2 4.5 V
VGS= ±20 VDC, VDS = 0 ±100 nA
VDS= 0.8 • V
= 0 V TJ = 125°C1mA
V
GS
DSS
VGS= 10 V, ID = 0.5 I
Pulse test, t ≤ 300 µ s, 13N80 0.80 Ω
TJ = 25°C 250 µA
D25
min. typ. max.
11N80 0.95 Ω
Applications
●
Switch-mode and resonant-mode
power supplies
●
Motor controls
●
Uninterruptible Power Supplies (UPS)
●
DC choppers
Advantages
●
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
●
Space savings
●
High power density
915380F (5/96)
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: +49-6206-5030 Fax: +49-6206-503629
IXYS Semiconductor
Page 2
IXTH 11N80 IXTH 13N80
IXTM 11N80 IXTM 13N80
Symbol Test Conditions Characteristic Values
= 25°C, unless otherwise specified)
(T
g
C
C
C
t
t
r
t
d(off)
t
f
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
g(on)
gs
gd
thJC
thCK
J
VDS= 10 V; ID = 0.5 • I
, pulse test 8 14 S
D25
VGS= 0 V, VDS = 25 V, f = 1 MHz 310 pF
VGS= 10 V, VDS = 0.5 • V
, ID = 0.5 I
DSS
RG = 2 Ω, (External) 63 100 ns
VGS= 10 V, VDS = 0.5 • V
, ID = 0.5 I
DSS
min. typ. max.
4500 pF
65 pF
20 50 ns
D25
33 50 ns
32 50 ns
145 170 nC
D25
30 45 nC
55 80 nC
0.42 K/W
0.25 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
VGS= 0 V 11N80 11 A
13N80 13 A
TO-247 AD (IXTH) Outline
1 2 3
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
2.2 2.54 .087 .102
1
A
2.2 2.6 .059 .098
2
b 1.0 1.4 .040 .055
1.65 2.13 .065 .084
b
1
b
2.87 3.12 .113 .123
2
C .4 . 8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0 .225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
I
SM
V
SD
t
rr
Repetitive; 11N80 44 A
pulse width limited by T
13N80 52 A
JM
IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IF = IS, -di/dt = 100 A/µs, VR = 100 V 800 ns
TO-204AA (IXTM) Outline
Pins 1 - Gate 2 - Source
Case - Drain
Dim. Millimeter Inches
Min. Max. Min. Max.
A 6.4 11.4 .250 .450
A1 3.42 .135
∅b .97 1.09 .038 .043
∅D 22.22 .875
e 10.67 11.17 .420 .440
e1 5.21 5.71 .205 .225
L 7.93 .312
∅p 3.84 4.19 .151 .165
∅p1 3.84 4.19 .151 .165
q 30.15 BSC 1.187 BSC
R 13.33 .525
R1 4.77 .188
s 16.64 17.14 .655 .675
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
Page 3
IXTH 11N80 IXTH 13N80
IXTM 11N80 IXTM 13N80
Fig. 1 Output Characteristics Fig. 2 Input Admittance
- Amperes
D
I
1.40
1.35
1.30
1.25
1.20
1.15
- Ohms
1.10
DS(on)
R
1.05
1.00
0.95
0.90
18
16
14
12
10
8
6
4
2
0
024681012
VDS - Volts
Fig. 3 R
= 25°C
T
J
02468101214161820222426
vs. Drain Current Fig. 4 Temperature Dependence
DS(on)
V
= 10V
GS
18
TJ = 25°C
16
V
= 10V
DS
14
12
10
8
- Amperes
D
I
6
4
2
0
012345678910
VGS - Volts
of Drain to Source Resistance
2.50
2.25
2.00
1.75
1.50
- Normalized
1.25
DS(o n)
1.00
R
0.75
0.50
-50 -25 0 25 50 7 5 100 125 150
ID - Amperes
Fig. 5 Drain Current vs. Fig. 6 Temperature Dependence of
Case Temperature Breakdown and Threshold Voltage
18
16
14
12
10
8
- Amperes
D
I
6
4
2
0
-50 -25 0 25 50 75 100 125 150
TC - Degrees C
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: 408-982-0700 Fax: 408-496-0670
TJ - Degrees C
1.2
1.1
1.0
0.9
- Normalized
0.8
G(th)
0.7
V
GS(th)
BV/V
0.6
0.5
-50 -25 0 25 50 75 100 125 150
TJ - Degrees C
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: +49-6206-5030 Fax: +49-6206-503629
IXYS Semiconductor
Page 4
IXTH 11N80 IXTH 13N80
IXTM 11N80 IXTM 13N80
Fig.7 Gate Charge Characteristic Curve Fig.8 Forward Bias Safe Operating Area
10
VDS = 400V
8
ID = 13A
IG = 10mA
6
- Volts
GE
4
V
2
0
0 25 50 75 100 125 150
Gate Charge - nCoulombs
Fig.9 Capacitance Curves Fig.10Source Current vs. Source
4500
4000
3500
3000
2500
2000
1500
Capacitance - pF
1000
500
0
0 5 10 15 20 25
C
iss
f = 1 MHz
V
= 25V
DS
C
oss
C
rss
Limited by R
DS(on)
10
- Amperes
D
1
I
0.1
1 10 100 1000
VDS - Volts
to Drain Voltage
18
16
14
12
10
8
- Amperes
D
I
6
4
2
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
TJ = 125°C
TJ = 25°C
10µs
100µs
1ms
10ms
100ms
VCE - Volts
VSD - Volts
Fig.11 Transient Thermal Impedance
1
D=0.5
0.1
D=0.2
D=0.1
D=0.05
D=0.02
0.01
D=0.01
Thermal Response - K/W
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
Single Pulse
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
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