Datasheet ixtf03n400 Datasheet

Advance Technical Information

High Voltage

IXTF03N400

Power MOSFET

( Electrically Isolated Tab)

N-Channel Enhancement Mode

Symbol Test Conditions Maximum Ratings

V

DSS

V

DGR

V

GSS

V

GSM

I

D25

I

DM

P

D

T

J

T

JM

T

stg

T

L

T

SOLD

F

C

V

ISOL

Weight 5 g

TJ= 25°C to 150°C 4000 V

TJ= 25°C to 150°C, RGS = 1MΩ 4000 V

Continuous ±20 V

Transient ±30 V

TC= 25°C 300 mA

TC= 25°C, Pulse Width Limited by T

JM

800 mA

TC= 25°C70W

- 55 ... +150 °C 150 °C

- 55 ... +150 °C

1.6mm (0.062 in.) from case for 10s 300 °C Plastic Body for 10s 260 °C

Mounting Force 20..120 / 4.5..27 N/lb.

50/60Hz, 1 Minute 4000 V~

V I

D25

R

ISOPLUS i4-Pak

1 = Gate 5 = Drain 2 = Source

= 4000V

DSS

= 300mA

≤ ≤

≤

DS(on)

1

2

≤ ≤

5

300

TM

Isolated Tab

ΩΩ

Ω

ΩΩ

Features

z

Silicon Chip on Direct-Copper Bond (DCB) Substrate

z

Isolated Mounting Surface

z

4000V Electrical Isolation

z

Molding Epoxies meet UL 94 V-0 Flammability Classification

Symbol Test Conditions Characteristic Values (TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

BV

V

I

GSS

I

DSS

GS(th)

VGS= 0V, ID = 250μA 4000 V

VDS= VGS, ID = 250μA 2.0 4.0 V

VGS= ±20V, VDS = 0V ±100 nA

VDS= V

, VGS= 0V 10 μA

DSS

Note 2, TJ = 125°C 750 μA

R

DS(on)

VGS= 10V, ID = 0.5 • I

, Note 1 300 Ω

D25

Advantages

z

Easy to Mount

z

Space Savings

z

High Power Density

Applications

z

High Voltage Power Supplies

z

Capacitor Discharge

z

Pulse Circuits

DS100117A(11/09)

IXTF03N400

Symbol Test Conditions Characteristic Values (TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

g

C

t

d(on)

t

r

t

d(off)

t

f

Q

R

fs

iss

oss

rss

g(on)

gs

gd

thJC

thCS

VDS = 50V, ID = 100mA, Note 1 110 180 mS

435 pF

VGS = 0V, VDS = 25V, f = 1MHz 19 pF

6 pF

Resistive Switching Times

VGS = 10V, VDS = 250V, ID = 150mA

17 ns

16 ns

86 ns

= 50Ω (External)

R

G

58 ns

16.3 nC

VGS = 10V, VDS = 1kV, ID = 0.5 • I

D25

1.9 nC

8.8 nC

1.78 °C/W

0.15 °C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values (TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

ISOPLUS i4-PakTM (HV) Outline

Pin 1 = Gate

PIN 1 = Gate

Pin 2 = Source

PIN 2 = Source

Pin 3 = Drain

PIN 3 = Drain

Tab 4 = Isolated

TAP 4 = Electically Isolated 4000V

I

S

I

SM

V

SD

t

rr

VGS = 0V 300 mA

Repetitive, Pulse Width Limited by T

JM

1.2 A

IF = 300mA, VGS = 0V, Note 1 3.0 V

IF = 1A, -di/dt = 100A/μs, VR = 200V 2.8 μs

Notes: 1. Pulse test, t < 300μs, duty cycle, d < 2%.

2. Device must be heatsunk for high-temperature leakage current measurements to avoid thermal runaway.

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice.

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

IXTF03N400

Fig. 1 . Ou tp u t C haracteristi cs @ TJ = 25ºC

300

250

200

150

- MilliAmperes

D

I

100

50

0

0102030405060708090

VDS - Volts

V

= 10V

GS

6V

5V

4V

Fig. 3 . Ou tp u t C haracteristi cs @ TJ = 125ºC

300

V

= 10V

GS

250

200

150

- MilliAmperes

D

I

100

6V

5V

4V

Fig. 2. Exten ded Outpu t C h ar ac ter i sti cs @ TJ = 25ºC

700

600

500

400

300

- MilliAmperes

D

I

200

100

0

0 50 100 150 200 250 300 350 400

Fig. 4. R

DS(on)

V

= 10V

GS

6V

5V

4V

VDS - Vol ts

Normalized to ID = 150m A Val u e vs.

Junction Temperature

3.0 V

= 10V

GS

2.6

2.2

I D = 300mA

I D = 150mA

- Normalized

DS(on)

R

1.8

1.4

1.0

50

3V

0

0 20 40 60 80 100 120 140 160 180 200

VDS - Volts

Fig. 5. R

Normalized to ID = 150m A Val u e vs.

DS(on)

Drain Current

2.8 V

= 10V

GS

2.6

2.4

2.2

2.0

1.8

- Normalized

1.6

DS(on)

R

1.4

1.2

1.0

0.8

0 100 200 300 400 500 600

ID - Mil liAmp ere s

TJ = 125ºC

TJ = 25ºC

0.6

0.2

-50 -25 0 25 50 75 100 125 150

TJ - Degrees Centigrade

Fig. 6. Maximum Drain Current vs.

Case T emper atu r e

350

300

250

200

150

- MilliAmperes

D

I

100

50

0

-50 -25 0 25 50 75 100 125 150

TC - Degrees Centigrade

IXTF03N400

Fig. 7. Input Admittance

350

300

250

200

150

- MilliAmperes

D

I

100

50

0

2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0

T

= 125ºC

J

25ºC

- 40ºC

VGS - Volts

Fig. 9. Forward Voltage Drop of

Intrinsic Diode

900

800

700

600

500

400

- MilliAmperes

S

I

300

200

100

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

T

J

= 125ºC

TJ = 25ºC

VSD - Volts

Fig. 8. Transconductance

400

T

= - 40ºC

350

300

250

200

- MilliSiemens

150

f s

g

100

50

0

0 50 100 150 200 250 300

J

25ºC

125ºC

ID - Mill iAmpe re s

Fig. 10. Gate Charge

10

V

= 1000V

DS

9

I

= 150mA

D

8

I

= 1mA

G

7 6 5

- Volt s

GS

V

4 3 2 1 0

Fig. 12. Maximum Tr ansient Thermal Impedance

0 2 4 6 81012141618

10.0

QG - NanoCoulombs

Fig. 11. Cap aci tan ce

1,000

C

iss

100

C

oss

10

Capacita nce - PicoFarad s

f = 1 MHz

1

0 5 10 15 20 25 30 35 40

C

rss

VDS - Volts

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

Fig. 12. Maximum Tr ansient Thermal Impedan c e

3.0

1.0

- ºC / W

(th)JC

Z

0.1

0.00001 0.0001 0.001 0.01 0.1 1 10

adad

Pulse Width - Seconds

IXYS REF: T_03N400(3P)10-27-09