Datasheet ixtc280n055t Datasheet

Preliminary Technical Information

TrenchMV

TM

IXTC280N055T

Power MOSFET

(Electrically Isolated Back Surface)

N-Channel Enhancement Mode Avalanche Rated

Symbol Test Conditions Maximum Ratings

V V

V

I

D25

I

LRMS

I

DM

I

AR

E

DSS

DGR

GSM

AS

TJ= 25°C to 175°C55V TJ= 25°C to 175°C; RGS = 1 MΩ 55 V

Transient ± 20 V

TC= 25°C 145 A Package Current Limit, RMS 75 A TC= 25°C, pulse width limited by T

JM

600 A

TC= 25°C40A TC= 25°C 1.5 J

V I

D25

R

DSS

DS(on)

=55 V = 145 A

≤≤

≤ 3.6 m

≤≤

ISOPLUS220 (IXTC) E153432

G

D

S

Isolated back surface

G = Gate D = Drain S = Source

ΩΩ

Ω

ΩΩ

dv/dt I

P

D

T

J

T

JM

T

stg

T

L

T

SOLD

V

ISOL

F

C

Weight 2g

≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ V

S

DSS

3 V/ns

TJ≤ 175°C, RG = 3.3 Ω

TC= 25°C 160 W

-55 ... +175 °C 175 °C

-55 ... +175 °C

1.6 mm (0.062 in.) from case for 10 s 300 °C Plastic body for 10 seconds 260 °C

50/60 Hz, t = 1 minute, I

< 1 mA, RMS 2500 V

ISOL

Mounting force 11..65/2.5..15 N/lb.

Features



Ultra-low On Resistance



Unclamped Inductive Switching (UIS) rated



Low package inductance

- easy to drive and to protect



175 °C Operating Temperature

Advantages



Easy to mount



Space savings



High power density

Applications



Automotive

- Motor Drives

Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max.

BV

V

I

GSS

I

DSS

GS(th)

VGS= 0 V, ID = 250 μA55V

VDS= VGS, ID = 250 μA 2.0 4.0 V

VGS= ± 20 V, VDS = 0 V ± 200 nA

VDS= V

DSS

25 μA

- High Side Switch

- 12V Battery

- ABS Systems



DC/DC Converters and Off-line UPS



Primary- Side Switch



High Current Switching

Applications

VGS= 0 V TJ = 150°C 250 μA

R

DS(on)

VGS= 10 V, ID = 50 A, Notes 1, 2 2.9 3.6 mΩ

DS99629 (11/06)

IXTC280N055T

Symbol Test Conditions Characteristic Values

g

C

t

Q

R

fs

iss

oss

rss

d(on)

r

d(off)

f

g(on)

gs

gd

thJC

thCS

(T

VDS= 10 V; ID = 60 A, Note 1 65 108 S

VGS = 0 V, VDS = 25 V, f = 1 MHz 1450 pF

VGS = 10 V, VDS = 0.5 V

, ID = 50 A 55 ns

DSS

RG = 3.3 Ω (External) 49 ns

VGS= 10 V, VDS = 0.5 V

, ID = 25 A 50 nC

DSS

= 25°C unless otherwise specified)

J

Min. Typ. Max.

9800 pF

320 pF

32 ns

37 ns

200 nC

50 nC

0.96°C/W

0.5 °C/W

Source-Drain Diode Characteristic Values

T

Symbol Test Conditions Min. Typ. Max.

= 25°C unless otherwise specified)

J

ISOPLUS220 (IXTC) Outline

1.Gate 2. Drain

3.Source

Note: Bottom heatsink (Pin 4) is electrically isolated from Pins 1,2, and 3.

I

S

I

SM

V

SD

t

rr

VGS = 0 V 280 A

Pulse width limited by T

JM

600 A

IF = 50 A, VGS = 0 V, Note 1 1.0 V

IF = 25 A, -di/dt = 100 A/μs30ns

VR = 30 V, VGS = 0 V

Notes: 1. Pulse test: t ≤ 300 μs, duty cycle d ≤ 2 %;

2. Drain and Source Kelvin contacts must be located less than 5 mm

from the plastic body.

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a preproduction design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice.

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2 7,071,537

IXTC280N055T

Fig. 1. Output Characteristics

280

240

200

160

- Amperes

120

D

I

80

40

0

0 0.1 0.2 0.3 0.4 0 .5 0 .6 0 .7 0.8 0.9

@ 25ºC

V

GS

9V 8V

VDS - Volts

= 10V

7V

6V

5V

Fig. 3. Output Characteristics

@ 150ºC

280

240

200

160

- Amperes

120

D

I

80

40

V

= 10V

GS

9V 8V

7V

6V

5V

Fig. 2. Extended Output Characteristics

@ 25º C

350

V

= 10V

GS

9V

300

8V

250

200

- Amperes

150

D

I

100

50

0

0 0.5 1 1.5 2 2.5 3 3.5

7V

6V

5V

VDS - Volts

Fig. 4. R

Normaliz ed to ID = 140A Value

DS(on)

vs. Junction Temperature

2.2

V

= 10V

GS

2.0

1.8

1.6

1.4

- Normalized

1.2

DS(on)

R

1.0

0.8

I D = 280A

I D = 140A

0

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6

VDS - Volts

Fig. 5. R

Normalized to ID = 140A Value

DS(on)

vs. Drain Current

2.2

2

1.8

V

= 10V

GS

15V

0 50 100 150 200 250 300 350

- - - -

- Normalized

DS(on)

R

1.6

1.4

1.2

1

0.8

ID - Amperes

TJ = 175ºC

TJ = 25ºC

0.6

-50 -25 0 25 50 75 100 125 150 175

TJ - Degrees Centigrade

Fig. 6. Drain Current vs. Case Temperature

90

External Lead Current Limit

80

70

60

50

40

- Amperes

D

I

30

20

10

0

-50 -25 0 25 50 75 100 125 150 175

TC - Degrees Centigrade

IXTC280N055T

s

Fig. 7. Input Admittance

250

225

200

175

150

125

- Amperes

D

100

I

75

50

25

0

33.5 44.5 55.566.5

T

= 150ºC

J

25ºC

- 40 ºC

VGS - Volts

Fig. 9. Forward Voltage Drop of

Intrinsic Diode

330

300

270

240

210

180

T

= 150ºC

J

150

- Amperes

S

I

120

90

60

30

0

0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3

TJ = 25ºC

VSD - Volts

Fig. 8. Transconductance

160

140

120

100

80

- Siemens

f s

60

g

40

20

0

0 25 50 75 100 125 150 175 200 225 250 275

T

J

= - 40ºC

25ºC

150ºC

ID - Amp ere s

Fig. 10. Gate Charge

10

V

= 27.5V

DS

9

8

7

6

5

- Volts

GS

V

4

3

2

1

0

I

= 25A

D

= 10mA

I

G

0 20 40 60 80 100 120 140 160 180 200

QG - NanoCoulombs

Fig. 12. Maximum Transient Thermal

Impedance

100,000

10,000

1,000

f = 1 MHz

Fig. 11. Capacitance

1.00

C

iss

0.10

C

oss

- ºC / W

(th)JC

Z

Capacitance - PicoFarad

C

rss

100

0 5 10 15 20 25 30 35 40

VDS - Volts

0.01

0.0001 0.001 0.01 0.1 1 10

Pulse W idth - Seconds

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTC280N055T

s

Fig. 13. Resistive Turn-on

Rise Time vs. Junction Temperature

60

R

= 3.3

G

55

50

45

40

35

- Nanosecond

r

t

30

25

20

15

I D = 25A

25 35 45 55 65 75 85 95 105 115 125

I D = 50A

V

= 10V

GS

= 27.5 V

DS

TJ - Degrees Centigrade

Fig. 15. Resistive Turn-on

Switching Times vs. Gate Resistance

200

t

180

160

140

120

100

- Nanoseconds

80

r

t

60

40

20

0

r

TJ = 125ºC, VGS = 10V

V

2 4 6 8 10 12 14 16 18 20

= 27.5 V

DS

t

- - - -

d(on)

RG - Ohms

I D = 50A

I D = 25A

Fig. 14. Resistive Turn-on

Rise Time vs. Drain Current

60

Ω

55

50

R

= 3.3

Ω

G

= 10V

V

GS

= 27.5V

V

DS

24 26 28 30 32 34 36 38 40 42 44 46 48 50

- Nanosecond

r

t

45

40

35

30

25

20

TJ = 25ºC

TJ = 125ºC

ID - Amperes

Fig. 16. Resistive Turn-off

Switching Times vs. Junction Temperature

80

75

70

t

d ( o n )

65

60

- Nanoseconds

55

50

45

40

35

30

57

t

f

55

RG = 3.3Ω, VGS = 10V

53

V

51

49

47

45

- Nanosecond

f

43

t

41

39

37

35

25 35 45 55 65 75 85 95 105 115 125

= 27.5 V

DS

t

d(off)

- - - -

I D = 25A

I D = 50A

TJ - Degrees Centigrade

95

90

85

t

d ( o f f )

80

75

- Nanosecond

70

65

60

55

50

45

40

Fig. 17. Resistive Turn-off

Switching Times vs. Drain Current

57

54

51

t

48

RG = 3.3Ω, VGS = 10V

45

V

42

- Nanoseconds

f

39

t

36

33

30

24 26 28 30 32 34 36 38 40 42 44 46 48 50

f

= 27.5 V

DS

t

d(off)

- - - -

ID - Amperes

TJ = 125ºC

TJ = 25ºC

90

85

80

t

d ( o f f )

75

- Nanoseconds

70

65

60

55

50

45

240

220

200

180

160

140

120

- Nanoseconds

f

t

100

80

60

40

2468101214161820

Fig. 18. Resistive Turn-off

Switching Times vs. Gate Resistance

t

f

TJ = 125ºC, VGS = 10V

V

= 27.5 V

DS

t

d(off)

I D = 25A

- - - -

I D = 50A

RG - Ohms

IXYS REF: T_280N055T (6V) 8-15-06.xls

370

340

310

280

250

220

190

160

130

100

70

t

d ( o f f )

- Nanoseconds