Datasheet ixtc240n055t Datasheet

Preliminary Technical Information

TrenchMV

TM

IXTC240N055T

Power MOSFET

(Electrically Isolated Back Surface)

N-Channel Enhancement Mode Avalanche Rated

Symbol Test Conditions Maximum Ratings

V

DSS

V

DGR

V

GSM

I

D25

I

L

I

DM

I

AR

E

AS

TJ= 25°C to 175°C55V TJ= 25°C to 175°C; RGS = 1 MΩ 55 V

Transient ± 20 V

TC= 25°C 132 A Package Current Limit, RMS 75 A TC= 25°C, pulse width limited by T

JM

650 A

TC= 25°C25A TC= 25°C 500 mJ

V I

D25

R

DSS

DS(on)

=55 V = 132 A

≤≤

4.0 m

≤

≤≤

ISOPLUS240 (IXTC) E153432

G

D

S

Isolated back surface

G = Gate D = Drain S = Source

ΩΩ

Ω

ΩΩ

dv/dt I

≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ V

S

DSS

3 V/ns

TJ≤ 175°C, RG = 5 Ω

P

T T T

T T

V

F

D

J

JM

stg

L

SOLD

ISOL

C

TC= 25°C 150 W

-55 ... +175 °C 175 °C

-55 ... +175 °C

1.6 mm (0.062 in.) from case for 10 s 300 °C Plastic body for 10 seconds 260 °C

50/60 Hz, t = 1 minute, I

< 1 mA, RMS 2500 V

ISOL

Mounting force ISOPLUS240 11..65/2.5..15 N/lb.

Weight 2g

Features



Ultra-low On Resistance



Unclamped Inductive Switching (UIS) rated



Low package inductance

- easy to drive and to protect



175 °C Operating Temperature

Advantages



Easy to mount



Space savings



High power density

Applications



Automotive

- Motor Drives

Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max.

BV

V

I

GSS

I

DSS

GS(th)

VGS= 0 V, ID = 250 μA55V

VDS= VGS, ID = 1 mA 2.0 4.0 V

VGS= ± 20 V, VDS = 0 V ± 200 nA

VDS= V

DSS

5 μA

- High Side Switch

- 12V Battery

- ABS Systems



DC/DC Converters and Off-line UPS



Primary- Side Switch



High Current Switching

Applications

VGS= 0 V TJ = 150°C 250 μA

R

DS(on)

VGS= 10 V, ID = 50 A, Note 1 4.0 mΩ

DS99628(11/06)

IXTC240N055T

Symbol Test Conditions Characteristic Values

g

C

t

Q

R

fs

iss

oss

rss

d(on)

r

d(off)

f

g(on)

gs

gd

thJC

thCS

(T

VDS= 10 V; ID = 60 A, Note 1 80 132 S

VGS = 0 V, VDS = 25 V, f = 1 MHz 1240 pF

VGS = 10 V, VDS = 0.5 V

, ID = 25 A 54 n s

DSS

RG = 5 Ω (External) 63 n s

VGS= 10 V, VDS = 0.5 V

, ID = 25A 32 nC

DSS

= 25°C unless otherwise specified)

J

Min. Typ. Max.

7600 pF

260 pF

40 ns

75 ns

170 nC

48 nC

1.0°C/W

0.25 °CW

Source-Drain Diode Characteristic Values

T

Symbol Test Conditions Min. Typ. Max.

= 25°C unless otherwise specified)

J

ISOPLUS240 (IXTC) Outline

1.Gate 2. Drain

3.Source

Note: Bottom heatsink (Pin 4) is electrically isolated from Pins 1,2, and 3.

I

S

I

SM

V

SD

t

rr

VGS = 0 V 240 A

Pulse width limited by T

JM

650 A

IF = 50 A, VGS = 0 V, Note 1 1.0 V

IF = 25 A, -di/dt = 100 A/μs30ns

VR = 30 V, VGS = 0 V

Notes: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %;

2. Drain and Source Kelvin contacts must be located less than 5 mm from the plastic body.

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a preproduction design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice.

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2 7,071,537

IXTC240N055T

Fig. 1. Output Characteristics

@ 25ºC

200

180

160

140

120

100

- Amperes

80

D

I

60

40

20

0

0 0.10.20.3 0.40.50.60.7

V

GS

9 V 8 V 7 V

VDS - Volts

= 10V

6V

5V

Fig. 3. Output Characteristics

@ 150ºC

200

180

160

140

120

100

- Amperes

80

D

I

60

40

20

0

0 0.2 0.4 0.6 0.8 1 1.2 1.4

V

= 10V

GS

9 V 8 V 7 V

VDS - Vo lts

6V

5V

Fig. 2. Extended Output Characteristics

@ 25ºC

330

V

= 10V

GS

300

270

240

210

180

150

- Amperes

D

I

120

8V

7V

6V

90

60

30

0

0 0.5 1 1.5 2 2 .5 3 3.5 4 4.5 5

5V

VDS - Volts

Fig. 4. R

Norm alized to ID = 120A Value

DS(on)

vs. Junction Temperature

2.2

V

= 10V

GS

2.0

1.8

1.6

1.4

- Normalized

1.2

DS(on)

R

1.0

0.8

0.6

-50 -25 0 25 50 75 100 125 150 175

I D = 240A

I D = 120A

TJ - Degrees Centigrade

Fig. 5. R

Nor m alize d to ID = 120A Value

DS(on)

vs. Drain Current

2.2

2

1.8 V

= 10 V

GS

15V

1.6

- Normalized

1.4

DS(on)

R

1.2

1

0.8

0 40 80 120 160 200 240 280 320

- - - -

ID - Amperes

TJ = 175ºC

TJ = 25ºC

Fig. 6. Drain Current vs. Case Temperature

90

External Lead Current Limit

80

70

60

50

40

- Amperes

D

I

30

20

10

0

-50 -25 0 25 50 75 100 125 150 175

TC - Degrees Centigrade

IXTC240N055T

Fig. 7. Input Admittance

270

240

210

180

150

120

- Amperes

D

I

90

60

30

0

3 3.5 4 4 .5 5 5.5 6 6.5

T

= 150ºC

J

25ºC

- 40ºC

VGS - Vo lts

Fig. 9. Forward Voltage Drop of

Intrin sic Dio de

300

270

240

210

180

150

- Amperes

120

S

I

90

60

30

0

0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3

T

= 150ºC

J

VSD - Vo lts

TJ = 25ºC

Fig. 8. Transconductance

200

T

= - 40ºC

J

180

160

140

120

100

- Siemens

f s

80

g

60

40

20

0

0 40 80 120 160 200 240 280

25ºC

150ºC

ID - Am pere s

Fig. 10. Gate Charge

10

V

= 27.5V

DS

9

8

7

6

5

- Volts

GS

V

4

3

2

1

0

I

= 25A

D

I

= 10 mA

G

0 2 0 40 60 80 100 120 140 160 180

QG - NanoCoulombs

Fig. 11. Capacitance

10,000

C

iss

1,000

C

oss

Capacitance - PicoFarads

C

f = 1 MHz

100

0 5 10 15 20 25 30 35 40

rss

VDS - Vo lts

IXYS reserves the right to change limits, test conditions, and dimensions.

Fig. 12. Maximum Transient Thermal

Impedance

10.00

1.00

- ºC / W

(th)JC

Z

0.10

0.01

0.00001 0.0001 0.001 0.01 0.1 1 10

Pulse W idth - Seconds

IXTC240N055T

s

-

s

Fig. 13. Resistive Turn-on

Rise Time vs. Junction Temperature

57

R

= 5

G

54

51

48

45

42

- Nanosecond

r

t

39

36

33

30

25 35 45 55 65 75 85 95 105 115 125

I D = 25A

I D = 50A

V

GS

= 30V

DS

TJ - Degrees Centigrade

Fig. 15. Resistive Turn-on

Switching Times vs. Gate Resistance

180

t

r

160

TJ = 125ºC, VGS = 10V

V

140

120

100

- Nanoseconds

80

r

t

I D = 50A

60

25 A

40

20

4 6 8 101214161820

= 30V

DS

t

d(on)

- - - -

RG - Ohms

I D = 50A 25 A

Ω

= 10V

Fig. 14. Resistive Turn-on

Rise Time vs. Drain Current

60

57

54

51

R

= 5

Ω

G

V

= 10V

GS

48

V

= 30V

DS

45

42

- Nanosecond

r

t

39

36

33

30

25 30 35 40 45 50

TJ = 25ºC

TJ = 125ºC

ID - Amperes

Fig. 16. Resistive Turn-off

Switching Times vs. Junction Temperature

66

62

t

58

d ( o n )

54

- Nanoseconds

50

46

42

38

34

78

76

74

72

70

68

66

- Nanosecond

f

t

64

62

60

58

25 35 45 55 65 75 85 95 105 115 125

t

f

= 30V

DS

I D = 25A

t

d(off)

- - -

RG = 5Ω, VGS = 10V

V

I D = 50A

TJ - Degrees Centigrade

100

96

92

88

84

80

76

72

68

64

60

d ( o f f )

t

- Nanosecond

Fig. 17. Resistive Turn-off

Switching Times vs. Drain Current

78

76

74

72

70

68

t

RG = 5Ω, VGS = 10V

66

- Nanoseconds

f

V

t

64

62

60

58

24 28 32 36 40 44 48

f

= 30V

DS

t

d(off)

- - - -

TJ = 25ºC, 125ºC

100

96

92

88

84

80

76

72

68

64

60

d ( o f f )

t

- Nanoseconds

ID - Amperes

225

200

175

150

125

- Nanoseconds

f

t

100

75

50

4 6 8 101214161820

Fig. 18. Resistive Turn-off

Switching Times vs. Gate Resistance

t

f

TJ = 125ºC, VGS = 10V

= 30V

V

DS

d(off)

- - - -

I D = 25A

I D = 50A

RG - Ohms

IXYS REF: T_240N055T (61) 11-16-06-B.xls

340

300

260

220

180

140

100

60

d ( o f f )

t

- Nanoseconds