Datasheet ixtc220n075t Datasheet

Preliminary Technical Information

TrenchMV

TM

IXTC220N075T

Power MOSFET

(Electrically Isolated Back Surface)

N-Channel Enhancement Mode Avalanche Rated

Symbol Test Conditions Maximum Ratings

V V

V

I

D25

I

LRMS

I

DM

I

AR

E

DSS

DGR

GSM

AS

TJ= 25°C to 175°C75V TJ= 25°C to 175°C; RGS = 1 MΩ 75 V

Transient ± 20 V

TC= 25°C 115 A Package Current Limit, RMS 75 A TC= 25°C, pulse width limited by T

JM

600 A

TC= 25°C25A TC= 25°C 1.0 J

V I

D25

R

DSS

DS(on)

=75 V = 115 A

≤≤

≤ 5.0 m

≤≤

ISOPLUS220 (IXTC) E153432

G

D

S

Isolated back surface

G = Gate D = Drain S = Source

ΩΩ

Ω

ΩΩ

dv/dt I

≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ V

S

DSS

3 V/ns

TJ≤ 175°C, RG = 3.3 Ω

Features

P

T T T

T T

V

F

D

J

JM

stg

L

SOLD

ISOL

C

TC= 25°C 150 W

-55 ... +175 °C 175 °C

-55 ... +175 °C

1.6 mm (0.062 in.) from case for 10 s 300 °C Plastic body for 10 seconds 260 °C

50/60 Hz, t = 1 minute, I

< 1 mA, RMS 2500 V

ISOL

Mounting force 11..65/2.5..15 N/lb.



Ultra-low On Resistance



Unclamped Inductive Switching (UIS) rated



Low package inductance

- easy to drive and to protect



175 °C Operating Temperature

Advantages



Easy to mount



Space savings



High power density

Weight 2g

Applications



Automotive

- Motor Drives

Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max.

BV

V

I

GSS

I

DSS

GS(th)

VGS= 0 V, ID = 250 μA75V

VDS= VGS, ID = 250 μA 2.0 4.0 V

VGS= ± 20 V, VDS = 0 V ± 200 nA

VDS= V

DSS

5 μA

- 42V Power Bus

- ABS Systems



DC/DC Converters and Off-line UPS



Primary Switch for 24V and 48V

Systems



High Current Switching

Applications

VGS= 0 V TJ = 150°C 250 μA

R

DS(on)

VGS= 10 V, ID = 25 A, Notes 1, 2 4.3 5.0 mΩ

DS99636 (11/06)

IXTC220N075T

Symbol Test Conditions Characteristic Values

g

C

t

Q

R

fs

iss

oss

rss

d(on)

r

d(off)

f

g(on)

gd

thJC

thCS

(T

VDS= 10 V; ID = 60 A, Note 1 75 120 S

VGS = 0 V, VDS = 25 V, f = 1 MHz 1100 pF

VGS = 10 V, VDS = 0.5 V

DSS

RG = 3.3 Ω (External) 55 ns

gs

VGS= 10 V, VDS = 0.5 V

DSS

= 25°C unless otherwise specified)

J

Min. Typ. Max.

7700 pF

230 pF

29 ns

, ID = 25 A 65 ns

47 ns

165 nC

, ID = 25 A 40 nC

50 nC

1.0°C/W

0.5 °C/W

Source-Drain Diode Characteristic Values

T

Symbol Test Conditions Min. Typ. Max.

= 25°C unless otherwise specified)

J

ISOPLUS220 (IXTC) Outline

1.Gate 2. Drain

3.Source

Note: Bottom heatsink (Pin 4) is electrically isolated from Pins 1,2, and 3.

I

S

I

SM

V

SD

t

rr

VGS = 0 V 220 A

Pulse width limited by T

JM

600 A

IF = 25 A, VGS = 0 V, Note 1 1.0 V

IF = 25 A, -di/dt = 100 A/μs50ns

VR = 40 V, VGS = 0 V

Notes: 1. Pulse test: t ≤ 300 μs, duty cycle d ≤ 2 %;

2. Drain and Source Kelvin contacts must be located less than 5 mm

from the plastic body.

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a preproduction design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice.

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2 7,071,537

IXTC220N075T

Fig. 1. Output Characteristics

220

200

180

160

140

120

100

- Amperes

D

I

80

60

40

20

0

0 0.1 0.2 0.3 0.4 0 .5 0.6 0.7 0 .8 0.9 1 1.1

@ 25ºC

V

GS

8V 7V

VDS - Volts

= 10V

6V

5V

Fig. 3. Output Characteristics

@ 150ºC

220

200

180

160

140

120

100

- Amperes

D

I

80

60

40

20

0

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2

V 8V

7V

VDS - Volts

GS

= 10V

6V

5V

Fig. 2. Extended Output Characteristics

@ 25º C

300

V

= 10V

GS

270

240

210

180

150

- Amperes

D

120

I

90

60

30

8V 7V

6V

5V

0

00.511.522.533.544.5

VDS - Volts

Fig. 4. R

Normaliz ed to ID = 110A Value

DS(on)

vs. Junction Temperature

2.4

V

2.2

2

1.8

1.6

- Normalized

1.4

DS(on)

1.2

R

1

0.8

0.6

-50 -25 0 25 50 75 100 125 150 175

GS

= 10V

TJ - Degrees Centigrade

I D = 220A

I D = 110A

Fig. 5. R

Normalized to ID = 110A Value

DS(on)

vs. Drain Current

2.6

2.4

2.2

2

V

= 10V

GS

15 V

0 30 60 90 120 150 180 210 240 270 300

- - - - -

- Normalized

DS(on)

R

1.8

1.6

1.4

1.2

1

0.8

0.6

ID - Amperes

TJ = 175ºC

TJ = 25ºC

Fig. 6. Drain Current vs. Case Temperature

90

External Le ad Current Li mi t

80

70

60

50

40

- Amperes

D

I

30

20

10

0

-50 -25 0 25 50 75 100 125 150 175

TC - Degrees Centigrade

IXTC220N075T

Fig. 7. Input Admittance

220

200

180

160

140

120

100

- Amperes

D

I

80

60

40

20

0

33.544.555.56

T

= 150ºC

J

25ºC

- 40ºC

VGS - Vo lts

Fig. 9. Forward Voltage Drop of

Intrin sic D iode

270

240

210

180

150

120

- Amperes

S

I

90

60

30

0

0.4 0.5 0 .6 0 .7 0.8 0.9 1 1 .1 1.2 1 .3

T

= 150ºC

J

VSD - Vo lts

TJ = 25ºC

Fig. 8. Transconductance

180

T

= - 40ºC

J

160

140

120

100

- Siemens

80

f s

g

60

40

20

0

0 20 40 60 80 100 120 140 160 180 200 220

25ºC

150ºC

ID - Amperes

Fig. 10. Gate Charge

10

V

= 37.5V

DS

= 25A

I

D

= 10mA

I

G

0 20 40 60 80 100 120 140 160 180

QG - NanoCo ulom bs

- Volts

GS

V

9

8

7

6

5

4

3

2

1

0

Fig. 11. Capacitance

10,000

C

iss

1,000

C

oss

Capacitance - PicoFarads

C

f = 1 MHz

100

0 5 10 15 20 25 30 35 40

rss

VDS - Vo lts

IXYS reserves the right to change limits, test conditions, and dimensions.

Fig. 12. Maximum Transient Thermal

Impedance

10.00

1.00

- ºC / W

(th)JC

Z

0.10

0.01

0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

IXTC220N075T

Fig. 13. Resistive Turn-on

Rise Time vs. Junction Temperature

70

R

V

= 3.3

G

= 10V

GS

= 37 .5V

DS

65

60

55

50

45

40

- Nanoseconds

r

t

35

30

25

20

25 35 45 55 65 75 85 95 105 115 125

I D = 50A

I D = 25A

TJ - Degrees Centigrade

Fig. 15. Resistive Turn-on

Switching Times vs. Gate Resistance

75

t

r

70

TJ = 125ºC, VGS = 10V

65

V

= 37.5V

DS

60

55

50

45

- Nanoseconds

r

t

40

35

30

25

2 4 6 8 101214 161820

d(on)

I D = 50A

- - - -

I D = 25A

RG - Ohm s

Fig. 14. Resistive Turn-on

Rise Time vs. Drain Current

75

Ω

70

65

60

R

= 3.3

Ω

G

55

50

45

- Nanoseconds

40

r

t

35

30

25

20

V

= 10V

GS

V

= 37.5V

DS

24 26 28 30 32 34 36 38 40 42 44 46 48 50

TJ = 25ºC

TJ = 125ºC

ID - Amperes

Fig. 16. Resistive Turn-off

Switching Times vs. Junction Temperature

220

200

180

160

140

120

100

80

60

40

20

t

d ( o n )

- Nanoseconds

48.5

t

48.0 RG = 3.3Ω, VGS = 10V

V

47.5

47.0

46.5

46.0

- Nanoseconds

f

45.5

t

45.0

44.5

44.0

25 35 45 55 65 75 85 95 105 115 125

f

= 37.5V

DS

t

d(off)

- - - -

I D = 25A

I D = 50A

TJ - Degrees Centigrade

84

80

t

76

d ( o f f )

72

- Nanoseconds

68

64

60

56

52

48

Fig. 17. Resistive Turn-off

Switching Times vs. Drain Current

49

48

47

46

- Nanoseconds

f

t

45

44

24 26 28 30 32 34 36 38 40 42 44 46 48 50

ID - Amperes

t

f

RG = 3.3Ω, VGS = 10V

V

= 37.5V

DS

TJ = 125ºC

TJ = 25ºC

d(off)

- - - -

Fig. 18. Resistive Turn-off

Switching Times vs. Gate Resistance

95

90

85

t

d ( o f f )

80

75

- Nanoseconds

70

65

60

55

50

45

210

t

f

190

TJ = 125ºC, VGS = 10V

V

170

150

130

110

- Nanoseconds

f

90

t

70

50

30

2 4 6 8 10 12 14 16 18 20

= 37.5V

DS

t

d(off)

- - - -

I D = 25A

RG - Ohm s

IXYS REF: T_220N075T (61) 8-31-06-A.xls

I D = 50A

340

310

280

250

220

190

160

130

100

70

d ( o f f )

t

- Nanoseconds