Datasheet ixtc220n055t Datasheet

Preliminary Technical Information

TrenchMV

TM

IXTC220N055T

Power MOSFET

(Electrically Isolated Back Surface)

N-Channel Enhancement Mode Avalanche Rated

Symbol Test Conditions Maximum Ratings

V V

V

I

D25

I

LRMS

I

DM

I

AR

E

DSS

DGR

GSM

AS

TJ= 25°C to 175°C55V TJ= 25°C to 175°C; RGS = 1 MΩ 55 V

Transient ± 20 V

TC= 25°C 130 A Package Current Limit, RMS 75 A TC= 25°C, pulse width limited by T

JM

600 A

TC= 25°C25A TC= 25°C 500 mJ

V I

D25

R

DSS

DS(on)

=55 V = 130 A

≤≤

4.4 m

≤

≤≤

ISOPLUS220 (IXTC) E153432

G

D

S

Isolated back surface

G = Gate D = Drain S = Source

ΩΩ

Ω

ΩΩ

dv/dt I

P

D

T

J

T

JM

T

stg

T

L

T

SOLD

V

ISOL

F

C

Weight 2g

≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ V

S

DSS

3 V/ns

TJ≤ 175°C, RG = 5 Ω

TC= 25°C 150 W

-55 ... +175 °C 175 °C

-55 ... +175 °C

1.6 mm (0.062 in.) from case for 10 s 300 °C Plastic body for 10 seconds 260 °C

50/60 Hz, t = 1 minute, I

< 1 mA, RMS 2500 V

ISOL

Mounting force 11..65/2.5..15 N/lb.

Features



Ultra-low On Resistance



Unclamped Inductive Switching (UIS) rated



Low package inductance

- easy to drive and to protect



175 °C Operating Temperature

Advantages



Easy to mount



Space savings



High power density

Applications



Automotive

- Motor Drives

Symbol Test Conditions Characteristic Values

(TJ = 25°C unless otherwise specified) Min. Typ. Max.

- High Side Switch

- 12V Battery

- ABS Systems

BV

V

I

GSS

I

DSS

GS(th)

VGS= 0 V, ID = 250 μA55V

VDS= VGS, ID = 250 μA 2.0 4.0 V

VGS= ± 20 V, VDS = 0 V ± 200 nA

VDS= V

DSS

5 μA



DC/DC Converters and Off-line UPS



Primary- Side Switch



High Current Switching

Applications

VGS= 0 V TJ = 150°C 250 μA

R

DS(on)

VGS= 10 V, ID = 25 A, Note 1 3.4 4.4 mΩ

DS99674(11/06)

IXTC220N055T

Symbol Test Conditions Characteristic Values

g

C

t

d(on)

t

r

t

d(off)

t

f

Q

R

fs

iss

oss

rss

g(on)

gs

gd

thJC

thCS

(T

VDS = 10 V, ID = 60 A, Note 1 75 120 S

VGS = 0 V, VDS = 25 V, f = 1 MHz 1270 pF

VGS = 10 V, VDS = 0.5 V

, ID = 25 A 62 ns

DSS

RG = 5 Ω (External) 53 ns

VGS= 10 V, VDS = 0.5 V

, ID = 25 A 42 nC

DSS

= 25°C unless otherwise specified)

J

Min. Typ. Max.

7200 pF

285 pF

36 ns

53 ns

158 nC

46 nC

1.0°C/W

0.25 °C/W

Source-Drain Diode Characteristic Values

T

Symbol Test Conditions Min. Typ. Max.

= 25°C unless otherwise specified)

J

ISOPLUS220 (IXTC) Outline

1.Gate 2. Drain

3.Source

Note: Bottom heatsink (Pin 4) is electrically isolated from Pins 1,2, and 3.

I

S

I

SM

V

SD

t

rr

VGS = 0 V 220 A

Pulse width limited by T

JM

600 A

IF = 25 A, VGS = 0 V, Note 1 1.0 V

IF = 25 A, -di/dt = 100 A/μs30ns

VR = 30 V, VGS = 0 V

Notes: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %;

2. Drain and Source Kelvin contacts must be located less than 5 mm from the plastic body.

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a preproduction design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice.

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2 7,071,537

IXTC220N055T

Fig. 1. Output Characteristics

@ 25ºC

220

200

180

160

140

120

100

- Amperes

D

I

80

60

40

20

0

0 0.1 0.2 0 .3 0 .4 0.5 0.6 0.7 0.8

V 9V

8V

VDS - Volts

= 10V

GS

7V

6V

5V

Fig. 3. Output Characteristics

@ 150ºC

200

180

160

140

120

100

- Amperes

D

80

I

60

40

20

0

0 0.2 0.4 0.6 0.8 1 1.2 1.4

V

= 10V

GS

9 V 8 V 7 V

VDS - Volts

6V

5V

Fig. 2. Extended Output Characteristics

@ 25ºC

320

V

= 10V

GS

9V

280

8V

240

200

160

- Amperes

D

I

120

80

40

0

00.511.52 2.533.544.5

7V

6V

5V

VDS - Volts

Fig. 4. R

Normaliz ed to ID = 110A Value

DS(on)

vs. Junction Temperature

2.2

V

= 10V

GS

2.0

1.8

1.6

1.4

- Normalized

1.2

DS(on)

R

1.0

0.8

0.6

-50 -25 0 25 50 75 100 125 150 175

I D = 220A

I D = 110A

TJ - Degrees Centigrade

Fig. 5. R

Normaliz ed to ID = 110A Value

DS(on)

vs. Drain Current

2.2

2

1.8

1.6 V

= 10V

GS

- Normalized

1.4

DS(on)

R

1.2

1

0.8

15V

0 40 80 120 160 200 240 280 320

- - - -

ID - Amp ere s

TJ = 175ºC

TJ = 25ºC

Fig. 6. Drain Current vs. Case Temperature

90

External Lead Current Limit

80

70

60

50

40

- Amperes

D

I

30

20

10

0

-50 -25 0 25 50 75 100 125 150 175

TC - Degrees Centigrade

IXTC220N055T

s

Fig. 7. Input Admittance

270

240

210

180

150

120

- Amperes

D

I

90

60

30

0

3.5 4 4.5 5 5.5 6 6.5

T

= 125ºC

J

25 ºC

-40ºC

VGS - Volts

Fig. 9. Forward Voltage Drop of

Intrinsic Diode

300

270

240

210

180

150

- Amperes

S

120

I

90

60

30

0

0.4 0.5 0.6 0.7 0 .8 0.9 1 1.1 1.2 1.3

T

= 150ºC

J

VSD - Volts

TJ = 25ºC

Fig. 8. Transconductance

180

160

140

120

100

- Siemens

80

f s

g

60

40

20

0

0 30 60 90 120 150 180 210 240 270

T

J

= - 40ºC

25ºC

150ºC

ID - Amp eres

Fig. 10. Gate Charge

10

V

= 27.5V

DS

9

8

7

6

5

- Volts

GS

V

4

3

2

1

0

= 25A

I

D

I

= 10mA

G

0 20 40 60 80 100 120 140 160

QG - NanoCoulombs

10,000

1,000

Fig. 11. Capacitance

C

iss

C

oss

10.00

1.00

- ºC / W

(th)JC

Z

0.10

Fig. 12. Maximum Transient Thermal

Impedance

Capacitance - PicoFarad

C

f = 1 MHz

100

0 5 10 15 20 25 30 35 40

VDS - Volts

rss

0.01

0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

IXYS reserves the right to change limits, test conditions, and dimensions.

s

IXTC220N055T

Fig. 13. Resistive Turn-on

Rise Time vs. Junction Temperature

75

R

V

= 5

G

= 10V

GS

= 30V

DS

70

65

60

55

50

45

- Nanosecond

r

40

t

35

I D = 25A

30

25

20

25 35 45 55 65 75 85 95 105 115 125

I D = 50A

TJ - Degrees Centigrade

Fig. 15. Resistive Turn-on

Switching Times vs. Gate Resistance

160

t

140

120

100

80

- Nanoseconds

r

t

60

40

20

r

TJ = 125ºC, VGS = 10V

V

4 6 8 10 12 14 16 18 20

t

= 30V

DS

I D = 50A, 25A

- - - -

d(on)

RG - Ohms

Fig. 14. Resistive Turn-on

Rise Time vs. Drain Current

75

Ω

70

65

60

R

= 5

Ω

G

55

50

45

- Nanosecond

r

t

40

35

30

25

V

= 10V

GS

= 30V

V

DS

25 30 35 40 45 50

TJ = 25ºC

TJ = 125ºC

ID - Amperes

Fig. 16. Resistive Turn-off Switch-

ing Times vs. Junction Temperature

65

60

t

d ( o n )

55

- Nanoseconds

50

45

40

35

30

65

63

61

59

57

55

53

- Nanosecond

f

t

51

49

47

45

25 35 45 55 65 75 85 95 105 115 125

I D = 25A, 50A

I D = 50A, 25A

t

f

= 30V

DS

t

d(off)

RG = 5Ω, VGS = 10V

V

TJ - Degrees Centigrade

- - - -

90

86

82

t

d ( o f f )

78

74

- Nanosecond

70

66

62

58

54

50

Fig. 17. Resistive Turn-off

Switching Times vs. Drain Current

64

62

60

t

f

58

RG = 5Ω, VGS = 10V

V

56

54

- Nanoseconds

f

52

t

50

48

46

24 28 32 36 40 44 48

= 30V

DS

t

d(off)

- - - -

TJ = 125ºC

TJ = 25ºC

ID - Amperes

84

80

76

t

d ( o f f )

72

- Nanoseconds

68

64

60

56

52

48

190

170

150

130

110

- Nanoseconds

f

t

90

70

50

4 6 8 101214161820

Fig. 18. Resistive Turn-off

Switching Times vs. Gate Resistance

t

f

TJ = 125ºC, VGS = 10V

V

= 30V

DS

t

- - - -

d(off)

I D = 25A

RG - Ohms

I D = 50A

IXYS REF: T_220N055T(5V) 8-29-06-A.XLS

260

230

200

170

140

110

80

50

t

d ( o f f )

- Nanoseconds