Datasheet ixtc160n10t Datasheet

Preliminary Technical Information

TrenchMV

TM

IXTC160N10T

Power MOSFET

(Electrically Isolated Back Surface)

N-Channel Enhancement Mode Avalanche Rated

Symbol Test Conditions Maximum Ratings

V

DSS

V

DGR

V

GSM

I

D25

I

L

I

DM

I

AR

E

AS

TJ= 25°C to 175°C 100 V TJ= 25°C to 175°C; RGS = 1 MΩ 100 V

Transient ± 20 V

TC= 25°C83A Package Current Limit, RMS 75 A TC= 25°C, pulse width limited by T

JM

430 A

TC= 25°C25A TC= 25°C 500 mJ

V I

D25

R

DSS

DS(on)

= 100 V =83 A

≤≤

≤ 7.5 m

≤≤

ISOPLUS220 (IXTC) E153432

G

D

S

Isolated back surface

G = Gate D = Drain S = Source

ΩΩ

Ω

ΩΩ

dv/dt I

P

D

T

J

T

JM

T

stg

T

L

T

SOLD

V

ISOL

F

C

Weight 2g

≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ V

S

DSS

3 V/ns

TJ≤ 175°C, RG = 5 Ω

TC= 25°C 140 W

-55 ... +175 °C 175 °C

-55 ... +175 °C

1.6 mm (0.062 in.) from case for 10 s 300 °C Plastic body for 10 seconds 260 °C

50/60 Hz, t = 1 minute, I

< 1 mA, RMS 2500 V

ISOL

Mounting force 11..65/2.5..15 N/lb.

Features



Ultra-low On Resistance



Unclamped Inductive Switching (UIS) rated



Low package inductance

- easy to drive and to protect



175 °C Operating Temperature

Advantages



Easy to mount



Space savings



High power density

Applications



Automotive

- Motor Drives

- 42V Power Bus

Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max.

BV

V

I

GSS

I

DSS

GS(th)

VGS= 0 V, ID = 250 μA 100 V

VDS= VGS, ID = 250 μA 2.5 4.5 V

VGS= ± 20 V, VDS = 0 V ± 200 nA

VDS= V

DSS

5 μA

VGS= 0 V TJ = 150°C 250 μA

- ABS Systems



DC/DC Converters and Off-line UPS



Primary Switch for 24V and 48V

Systems



Distributed Power Architechtures



Electronic Valve Train Systems



High Current Switching

Applications



High Voltage Synchronous Recifier

and VRMs

R

DS(on)

VGS= 10 V, ID = 25 A, Notes 1, 2 6.5 7.5 mΩ

DS99677(11/06)

IXTC160N10T

Symbol Test Conditions Characteristic Values

g

C

t

d(on)

t

r

t

d(off)

t

f

Q

R

fs

iss

oss

rss

g(on)

gs

gd

thJC

thCS

(T

VDS= 10 V; ID = 60 A, Note 1 65 102 S

VGS = 0 V, VDS = 25 V, f = 1 MHz 880 pF

VGS = 10 V, VDS = 0.5 V

, ID = 25 A 61 ns

DSS

RG = 5 Ω (External) 49 ns

VGS= 10 V, VDS = 0.5 V

, ID = 25 A 37 nC

DSS

= 25°C unless otherwise specified)

J

Min. Typ. Max.

6600 pF

135 pF

33 ns

42 ns

132 nC

40 nC

1.06°C/W

0.5 °C/W

Source-Drain Diode Characteristic Values

T

Symbol Test Conditions Min. Typ. Max.

= 25°C unless otherwise specified)

J

ISOPLUS220 (IXTC) Outline

1.Gate 2. Drain

3.Source

Note: Bottom heatsink (Pin 4) is electrically isolated from Pins 1,2, and 3.

I

S

I

SM

V

SD

t

rr

VGS = 0 V 160 A

Pulse width limited by T

JM

430 A

IF = 25 A, VGS = 0 V, Note 1 1.0 V

IF = 25 A, -di/dt = 100 A/μs60ns

VR = 30 V, VGS = 0 V

Notes: 1. Pulse test: t ≤ 300 μs, duty cycle d ≤ 2 %;

2. Drain and Source Kelvin contacts must be located less than 5 mm

from the plastic body.

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a preproduction design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice.

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

IXTC160N10T

Fig. 1. Output Characteristics

@ 25ºC

160

140

120

100

80

- Amperes

D

I

60

40

20

0

0 0.2 0.4 0.6 0.8 1 1.2

V

GS

9V 8V

VDS - Volts

= 10V

7V

6V

5V

Fig. 3. Output Characteristics

@ 150ºC

160

140

120

100

80

- Amperes

D

I

60

40

20

0

0 0.4 0.8 1.2 1.6 2 2.4 2.8

V

GS

8V

VDS - Volts

= 10V

7V

6V

5V

Fig. 2. Extended Output Characteristics

@ 25ºC

300

V

= 10V

GS

9V 8V

7V

6V

0

012345 678

- Amperes I

275

250

225

200

175

150

125

D

100

75

50

25

VDS - Volts

Fig. 4. R

Normalized to ID = 160A Value

DS(on)

vs. Junction Temperature

2.8

V

= 10V

GS

2.6

2.4

2.2

2

1.8

- Normalized

1.6

1.4

DS(on)

R

1.2

1

0.8

0.6

-50 -25 0 25 50 75 100 125 150 175

I D = 160A

I D = 80A

TJ - Degrees Centigrade

Fig. 5. R

Normalized to ID = 80A Value

DS(on)

vs. Drain Current

3.2

V

= 10V

GS

3

2.8

2.6

2.4

2.2

2

- Normalized

1.8

1.6

DS(on)

R

1.4

1.2

1

0.8

0.6

15V - - - -

0 50 100 150 200 250 300

ID - Amperes

TJ = 175ºC

TJ = 25ºC

Fig. 6. Drain Current vs. Case Temperature

90

External Lead Current Limit

80

70

60

50

40

- Amperes

D

I

30

20

10

0

-50 -25 0 25 50 75 100 125 150 175

TC - Degrees Centigrade

IXTC160N10T

s

Fig. 7. Input Admittance

200

180

160

140

120

100

- Amperes

D

80

I

60

40

20

0

3.5 4 4.5 5 5.5 6 6.5 7

T

= 150ºC

J

25 ºC

- 40 ºC

VGS - Volts

Fig. 9. Forward Voltage Drop of

Intrinsic Diode

300

250

200

150

- Amperes

S

I

100

50

0

0.4 0.5 0 .6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4

T

J

= 150ºC

TJ = 25ºC

VSD - Volts

Fig. 8. Transconductance

140

T

120

100

80

- Siemens

60

f s

g

40

20

0

0 20 40 60 80 100 120 140 160 180 200 220

= - 40ºC

J

25ºC

150ºC

ID - Amp eres

Fig. 10. Gate Charge

10

V

= 50V

DS

9

8

7

6

- Volts

5

GS

V

4

3

2

1

0

I

= 25A

D

I

= 10mA

G

0 20 40 60 80 100 120 140

QG - NanoCoulombs

Fig. 12. Maximum Transient Thermal

Impedance

10,000

1,000

f = 1 MHz

Fig. 11. Capacitance

10.00

C

iss

1.00

C

oss

- ºC / W

(th)JC

Z

0.10

Capacitance - PicoFarad

C

rss

100

0 5 10 15 20 25 30 35 40

VDS - Volts

0.01

0.0001 0.001 0.01 0.1 1 10

Pulse W idth - Sec ond s

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTC160N10T

Fig. 13. Resistive Turn-on

Rise Time vs. Junction Temperature

90

R

= 5

G

80

70

60

50

- Nanoseconds

r

t

40

30

20

I D = 25A

25 35 45 55 65 75 85 95 105 115 125

I D = 50A

V

= 10V

GS

= 50V

DS

TJ - Degrees Centigrade

Fig. 15. Resistive Turn-on

Switching Times vs. Gate Resistance

170

t

r

TJ = 125ºC, VGS = 10V

V

90

70

50

30

4 6 8 10 12 14 16 18 20

- Nanoseconds

r

t

150

130

110

= 50V

DS

t

d(on)

- - - -

RG - Ohm s

I D = 50A

I D = 25A

Fig. 14. Resistive Turn-on

Rise Time vs. Drain Current

70

Ω

65

60

R

= 5

Ω

G

55

50

45

- Nanoseconds

r

t

40

35

30

= 10V

V

GS

V

= 50V

DS

25 30 35 40 45 50

TJ = 25ºC

TJ = 125ºC

ID - Am pere s

Fig. 16. Resistive Turn-off

Switching Times vs. Junction Temperature

65

60

55

50

45

40

35

30

t

d ( o n )

- Nanoseconds

90

t

85

80

75

I D = 25A

70

65

I D = 50A

60

55

- Nanoseconds

f

50

t

I D = 25A

45

40

35

I D = 50A

30

25 35 45 55 65 75 85 95 105 115 125

RG = 5Ω, VGS = 10V

V

f

= 50V

DS

t

d(off)

- - - -

TJ - Degrees Centigrade

120

115

110

105

100

95

90

85

80

75

70

65

60

t

d ( o f f )

- Nanoseconds

Fig. 17. Resistive Turn-off

Switching Times vs. Drain Current

44

43

42

41

- Nanoseconds

f

t

40

39

38

25 30 35 40 45 50

TJ = 125ºC

TJ = 25ºC

ID - Am pere s

t

f

RG = 5Ω, VGS = 10V

V

= 50V

DS

TJ = 125ºC

TJ = 25ºC

t

d(off)

- - - -

Fig. 18. Resistive Turn-off

Switching Times vs. Gate Resistance

80

77

74

t

71

d ( o f f )

68

65

- Nanoseconds

62

59

56

53

50

47

44

140

t

130

TJ = 125ºC, VGS = 10V

120

V

110

100

90

80

70

- Nanoseconds

f

t

60

50

40

30

4 6 8 101214161820

f

= 50V

DS

t

d(off)

- - - -

I D = 25A

I D = 50A

RG - Ohm s

IXYS REF: T_160N10T (5V) 11-16-06-A.xls

205

190

175

160

145

130

115

100

85

70

55

40

t

d ( o f f )

- Nanoseconds