Datasheet ixtc110n25t Datasheet

Trench Gate Power MOSFET

IXTC110N25T

V I

R

D25

DSS

DS(on)

(Electrically Isolated Back Surface)

N-Channel Enhancement Mode Avalanche Rated

ISOPLUS220 (IXTC)

Symbol Test Conditions Maximum Ratings

V

DSS

V

DGR

V

GSS

V

GSM

I

D25

I

DM

I

A

E

AS

dV/dt IS≤ IDM, VDD ≤ V

P

D

T

J

T

JM

T

stg

T

L

T

SOLD

V

ISOL

F

C

TJ= 25°C to 150°C 250 V

TJ= 25°C to 150°C, RGS = 1MΩ 250 V

Continuous ± 20 V

Transient ± 30 V

TC= 25°C 50 A

TC= 25°C, pulse width limited by T

JM

300 A

TC= 25°C25A

TC= 25°C 1 J

, TJ ≤ 150°C 10 V/ns

DSS

TC= 25°C 180 W

-55 ... +150 °C

150 °C

-55 ... +150 °C

1.6mm (0.062 in.) from case for 10s 300 °C

Plastic body for 10 seconds 260 °C

50/60Hz, t = 1 minute, I

< 1mA, RMS 2500 V

ISOL

Mounting force 11..65 / 2.5..14.6 N/lb.

Weight 4g

E153432

G

G = Gate D = Drain S = Source

Features



Silicon chip on Direct-Copper-Bond substrate



Isolated mounting surface



2500V electrical isolation



Low drain to tab capacitance (< 30pF)

Advantages

= 250V

= 50A

≤≤

≤

27m

≤≤

D

S

Isolated Tab

ΩΩ

Ω

ΩΩ

Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max.

BV

V

I

GSS

I

DSS

GS(th)

VGS= 0V, ID = 250μA 250 V

VDS= VGS, ID = 1mA 2.5 4.5 V

VGS= ± 20V, VDS = 0V ± 200 nA

VDS= V

DSS

5 μA

VGS= 0V TJ = 125°C 250 μA

R

DS(on)

VGS= 10V, ID = 55A, Note 1 22 27 mΩ



Easy assembly



Space savings



High power density

Applications



DC-DC converters



Battery chargers



Switched-mode and resonant-mode power supplies



DC choppers



AC motor drives



Uninterruptible power supplies



High speed power switching applications

DS99841B(08/08)

IXTC110N25T

Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max.

g

C

t

d(on)

t

r

t

d(off)

t

f

Q

R

fs

iss

oss

rss

g(on)

gs

gd

thJC

thCS

VDS= 10V, ID = 55A, Note 1 65 110 S

9400 pF

VGS = 0V, VDS = 25V, f = 1MHz 850 pF

55 pF

Resistive Switching Times 19 ns

VGS = 15V, VDS = 0.5  V

, ID = 55A 27 ns

DSS

RG = 2Ω (External) 60 ns

27 ns

157 nC

VGS= 10V, VDS = 0.5  V

, ID = 25A 40 nC

DSS

50 nC

0.69 °C/W

0.21 °C/W

Source-Drain Diode Characteristic Values

(T

Symbol Test Conditions Min. Typ. Max.

= 25°C unless otherwise specified)

J

ISOPLUS220 (IXTC) Outline

1.Gate 2. Drain

3.Source

Note: Bottom heatsink (Pin 4) is electrically isolated from Pins 1, 2 and 3.

I

S

I

SM

V

SD

t

rr

Q

RM

I

RM

VGS = 0V 110 A

Repetitive, pulse width limited by T

JM

IF = 55A, VGS = 0V, Note 1 1.2 V

170 ns

IF = 55A, -di/dt = 250A/μs V

= 100V, VGS = 0V

R

27 A

Notes: 1. Pulse test: t ≤ 300μs; duty cycle, d ≤ 2%.

350 A

2.3 μC

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

IXTC110N25T

Fig. 1. Ou tp u t C h aracter isti cs

@ 25ºC

110

100

90

80

70

60

50

- Amperes

D

I

40

30

20

10

0

0 0. 2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6

V

= 10V

GS

8V 7V 6V

VDS - Volts

5.5V

5V

Fig. 3. Output Ch ar ac ter i sti c s

@ 125ºC

110

100

90

80

70

60

50

- Amperes

D

I

40

30

20

10

0

0123456

V

= 10V

GS

8V 7V

VDS - Volts

6V

5V

Fig. 2. Extended Output Characteristics

@ 25ºC

250

225

200

175

150

125

- Amperes

100

D

I

75

50

25

0

V

= 10V

GS

8V 7V

6V

5V

0 2 4 6 8 10 12 14 16 18 20

VDS - Volts

Fig. 4. R

Normalized to ID = 55A Value

DS(on)

vs. Junction Temperature

3.0

2.8

V

= 10V

2.6

2.4

2.2

2.0

1.8

1.6

- Normalized

1.4

DS(on)

1.2

R

1.0

0.8

0.6

0.4

GS

I D = 110A

I D = 55A

-50 -25 0 25 50 75 100 125 150

TJ - De grees C entigrade

Fig. 5. R

Normalized to ID = 55A Value

DS(on)

vs. Drain Current

3.4

V

= 10V

3.0

2.6

2.2

- Normalized

1.8

DS(on)

R

1.4

1.0

0.6

GS

0 20 40 60 80 100 120 140 160 180 200 220 240 260

ID - Amperes

TJ = 125ºC

TJ = 25ºC

Fig. 6. Maximum Drain C u r r ent vs.

Case Temperature

55

50

45

40

35

30

25

- Amperes

D

I

20

15

10

5

0

-50 -25 0 25 50 75 100 125 150

TC - Degrees Centigrade

IXTC110N25T

Fig. 7. Input Admittance

160

140

120

T

= 125ºC

100

80

- Amperes

D

I

60

40

20

0

3.4 3.8 4.2 4.6 5.0 5.4 5.8 6.2

J

25ºC

- 40ºC

VGS - Volts

Fig. 9. Forward Voltage Drop of

Intrinsic Diode

300

250

200

150

- Amperes

S

I

100

50

0

0.4 0. 5 0.6 0.7 0.8 0. 9 1 1.1 1. 2 1.3

T

= 125ºC

J

TJ = 25ºC

VSD - Volts

Fig. 8. Transconductance

180

160

140

120

100

- Siemens

80

f s

g

60

40

20

0

0 20 40 60 80 100 120 140 160

T

= - 40ºC

J

ID - Amperes

Fig. 10. Gate Charge

10

V

9

8

7

6

5

- Volts

GS

4

V

3

2

1

0

0 20 40 60 80 100 120 140 160

DS

I

D

I

G

= 125V

= 25A

= 10mA

QG - NanoCoulombs

25ºC

125ºC

Fig. 11. Capacitance

100,000

= 1 MHz

f

C

10,000

1,000

100

Capacitance - PicoFarads

10

0 5 10 15 20 25 30 35 40

iss

C

oss

C

rss

VDS - Volts

IXYS reserves the right to change limits, test conditions, and dimensions.

Fig. 12. Maximum Tr an si en t Thermal

Impedance

1.00

0.10

- ºC / W

(th)JC

Z

0.01

0.0001 0. 001 0.01 0.1 1 10

Pulse W idth - Seco nds

IXYS REF: T_110N25T(8W)8-11-08-A

IXTC110N25T

Fig. 13. R esi sti ve Turn -o n

Rise Time vs. Junct i o n Temperatu r e

29

R

= 2

28

27

26

25

24

- Nanoseconds

r

t

23

22

21

25 35 45 55 65 75 85 95 105 115 125

I D = 55A

I D = 110A

V

G

= 15V

GS

= 125V

DS

TJ - Degrees Centigrade

Fig. 15. R esi st iv e Turn -o n

Switching Times vs. Gate Resistance

50

t

r

45

TJ = 125ºC, VGS = 15V

V

= 125V

DS

40

35

- Nanoseconds

30

r

t

25

20

2345678910

t

d(on)

- - - -

I D = 110A, 55A

RG - Ohms

Fig. 14. Resi stive Turn-on

Rise Ti me vs. Drai n C u rr en t

29

28

27

26

R

= 2

25

24

- Nanoseconds

r

23

t

22

21

20

G

V

= 15V

GS

V

= 125V

DS

20 30 40 50 60 70 80 90 100 110 120

TJ = 25ºC

TJ = 125ºC

ID - Amperes

Fig. 16. R esi sti ve Turn- o ff

Switching Times vs. Junction Temperature

31

30

29

t

d ( o n )

28

27

- Nanoseconds

26

25

24

23

22

21

20

19

38

t

f

36

RG = 2, VGS = 15V

34

V

= 125V

DS

32

30

28

26

24

- Nanoseconds

f

22

t

20

18

16

14

25 35 45 55 65 75 85 95 105 115 125

t

d(off)

- - - -

I D = 55A

I D = 110A

TJ - Degrees Centigrade

74

72

70

t

d ( o f f )

68

66

64

- Nanoseconds

62

60

58

56

54

52

50

Fig. 17. Resistive Tur n -o ff

Switchin g Times vs. Dr ai n C u r r en t

30

29

28

27

26

25

- Nanoseconds

f

24

t

23

22

21

20 30 40 50 60 70 80 90 100 110 120

t

f

RG = 2, VGS = 15V

V

DS

TJ = 25ºC

TJ = 125ºC

= 125V

t

- - - -

)

d(off

ID - Amperes

TJ = 25ºC

TJ = 125ºC

Fig. 18. Resistive Tur n -o ff

Switchin g Times vs. Gate R esi stan ce

90

85

t

d ( o f f )

80

75

- Nanoseconds

70

65

60

55

50

45

100

t

f

90

TJ = 125ºC, VGS = 15V

80

V

= 125V

DS

70

60

50

- Nanoseconds

f

40

t

30

20

10

2345 67 8910

t

d(off)

- - - -

I D = 55A, 110A

RG - Ohms

IXYS REF: T_110N25T(8W)8-11-08-A

220

200

180

160

140

120

100

80

60

40

t

d ( o f f )

- Nanoseconds