Page 1
Preliminary Technical Information
Linear Power MOSFET
IXTB62N50L
With Extended FBSOA
N-Channel Enhancement Mode
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
F
c
Weight 10 g
TJ= 25°C to 150°C 500 V
TJ= 25°C to 150°C; RGS = 1 MΩ 500 V
Continuous ±30 V
Transient ±40 V
TC= 25°C 62 A
TC= 25°C, pulse width limited by TJM 150 A
TC= 25°C 62 A
TC= 25°C 80 mJ
5.0 J
TC= 25°C 800 W
-55 to +150 °C
150 °C
-55 to +150 °C
1.6 mm (0.063 in) from case for 10 s 300 °C
Plastic body for 10 s 260 °C
Mounting force 20...120/4.5...27 N/lb.
V
I
D25
R
DSS
DS(on)
= 500 V
= 62 A
≤≤
≤ 0.1
≤≤
ΩΩ
Ω
ΩΩ
PLUS 264TM (IXTB)
G
D
S
(TAB)
G = Gate D = Drain
S = Source TAB = Drain
Features
z
Designed for linear operation
z
International standard package
z
Unclamped Inductive switching (UIS)
rated
z
Molding epoxies meet UL 94 V-0
flammability classification
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
© 2007 IXYS CORPORATION, All rights reserved
VGS= 0 V, ID = 1 mA 500 V
VDS= VGS, ID = 250 μA35V
VGS= ±30 V, VDS = 0 V ±200 nA
VDS= V
VGS= 0 V TJ = 125°C1mA
VGS= 20 V, ID = 0.5 I
Note 1
DSS
D25
TJ = 25°C50μA
0.10 Ω
Applications
z
Programmable loads
z
Current regulators
z
DC-DC converters
z
Battery chargers
z
DC choppers
z
Temperature and lighting controls
Advantages
z
Easy to mount
z
Space savings
z
High power density
DS99336A(03/07)
Page 2
IXTB62N50L
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCS
VDS= 10 V; ID = 0.5 • I
, Note 1 10 15 20 S
D25
11500 pF
VGS= 0 V, VDS = 25 V, f = 1 MHz 1460 pF
210 pF
36 ns
VGS= 15 V, VDS = 0.5 • V
, ID = 0.5 • I
DSS
D25
85 ns
RG= 2 Ω (External), 110 ns
75 ns
550 nC
VGS= 20 V, VDS = 0.5 • V
, ID = 0.5 • I
DSS
D25
115 nC
180 nC
0.156 °C/W
0.15 °C/W
Safe Operating Area Specification
Symbol Test Conditions Min. Typ. Max.
PLUS 264TM (IXTB) Outline
SOA VDS = 400 V, ID = 0.75 A, TC = 90°C 300 W
Source-Drain Diode Characteristic Values
= 25°C, unless otherwise specified)
(T
Symbol Test Conditions Min. Typ. Max.
I
S
I
SM
V
SD
t
rr
VGS= 0 V 62 A
Repetitive; pulse width limited by T
IF = IS, VGS = 0 V, 1.5 V
Note 1
IF = IS, -di/dt = 100 A/μs, VR = 100V 500 ns
J
JM
176 A
Note 1: Pulse test, t ≤ 300 μs, duty cycle, d ≤ 2 %
Ref: IXYS CO 0113 R0
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from data gathered during objective characterizations of preliminary engineering lots; but
also may yet contain some information supplied during a pre-production design evaluation. IXYS
reserves the right to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Page 3
IXTB62N50L
V
Fig. 1. Output Characteristics
@ 25ºC
70
V
= 20V
GS
60
50
40
30
- A mpe res
D
I
20
10
0
0123456
18V
16V
14V
V
- Volts
D S
12V
10V
9V
8V
7V
Fig. 3. Output Characteristics
@ 125ºC
70
V
= 20V
GS
60
50
40
30
- A mpe res
D
I
20
10
0
02468101214
16V
14V
12V
V
- Volts
D S
10V
9V
8V
7V
6V
Fig. 2. Extended Output Characteristics
@ 25ºC
160
V
= 20V
GS
140
120
100
80
- A mperes
60
D
I
40
20
0
0 2 4 6 8 101214161820
Fig. 4. R
DS(on)
18V
16V
14V
12V
10V
9V
8V
V
- Volts
D S
Normalized to 0.5 I
D25
vs. Junction Temperature
3.1
V
= 20V
GS
ID = 62A
I
= 31A
D
1
-50-25 0 255075100125150
T
- Degrees Centigrade
J
- Normalized
(on)
R
2.8
2.5
2.2
1.9
1.6
1.3
D S
0.7
0.4
alue
Fig. 5. R
0.5 I
3
2.8
VGS = 20V
2.6
2.4
2.2
2
1.8
- Normalized
(on)
1.6
D S
1.4
R
1.2
1
0.8
0 153045607590105120135150
Normalized to
DS(on)
Value vs. I
D25
D
TJ = 125ºC
TJ = 25ºC
I D - Amperes
70
60
50
40
30
- A mperes
D
I
20
10
0
-50-250 255075100125150
Fig. 6. Drain Current vs. Case
Tempe r ature
T
- Degrees Centigrade
C
© 2007 IXYS CORPORATION, All rights reserved
Page 4
IXTB62N50L
Fig. 7. I nput Admittance
100
90
80
70
60
50
- A mperes
40
D
I
30
20
10
0
5 678 91011121314
T
= 125ºC
J
25ºC
-40ºC
V
G S
- Volts
Fig. 9. Source Current vs.
Source-To-Drain Voltage
250
225
200
175
150
125
- A mperes
100
S
I
75
T
= 125ºC
J
50
25
0
T
= 25ºC
J
0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5
V
S D
- Volts
Fig. 8. Transconductance
30
27
- Siemens
f s
g
24
21
18
15
12
9
6
3
0
TJ = -40 ºC
25ºC
125ºC
0 102030405060708090100
I
- Amperes
D
Fig. 10. Gate Charge
20
V
18
16
14
12
10
- V o lts
G S
8
V
6
4
2
0
0 100 200 300 400 500
DS
I
= 31A
D
= 10m A
I
G
= 250V
Q G - nanoCoulombs
Fig. 11. Capacitance
100,000
f = 1MHz
C
iss
10,000
C
oss
Capacitance - pF
1,000
C
rss
100
0 5 10 15 20 25 30 35 40
V
- Volts
D S
IXYS reserves the right to change limits, test conditions, and dimensions.
Page 5
IXTB62N50L
Fig. 12. Forward-Bias Safe
Operati ng Area @ T
1000
R
Limit
DS(on)
100
10
- Amperes
D
I
1
0.1
10 100 1000
V
- Volts
D S
= 25ºC
C
DC
T
Fig. 14. M ax imum Transien t Thermal Impedance
1.000
= 150ºC
J
25µs
100µs
1ms
10ms
Fig. 13. Forward-Bias Safe
- Volts
= 90ºC
C
DC
TJ = 150ºC
Operating Area @ T
1000
R
100
10
- Amperes
D
I
1
0.1
10 100 1000
DS(on)
Limit
V
D S
25µs
100µs
1ms
10ms
(ºC/W)
-
Z
(th) J C
0.100
0.010
0.001
0.1 1 10 100 1000
Pulse Width - milliseconds
© 2007 IXYS CORPORATION, All rights reserved
IXYS REF: T_62N50L (9N) 4-05-07-A.xls
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