Datasheet ixta88n085t7 Datasheet

Preliminary Technical Information

TrenchMV

TM

IXTA88N085T7

Power MOSFET

N-Channel Enhancement Mode Avalanche Rated

Symbol Test Conditions Maximum Ratings

V

DSS

V

DGR

V

GSM

I

D25

I

DM

I

AR

E

AS

dv/dt I

TJ= 25°C to 175°C85V TJ= 25°C to 175°C; RGS = 1 MΩ 85 V

Transient ± 20 V

TC= 25°C88A TC= 25°C, pulse width limited by T

JM

240 A

TC= 25°C25A TC= 25°C 500 mJ

≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ V

S

DSS

3 V/ns

TJ≤ 175°C, RG = 5 Ω

P

T T T

T T

D

J

JM

stg

L

SOLD

TC= 25°C 230 W

-55 ... +175 °C 175 °C

-40 ... +175 °C

1.6 mm (0.062 in.) from case for 10 s 300 °C Plastic body for 10 seconds 260 °C

Weight 3g

TO-263 (7-lead) (IXTA..7)

Pin-out:1 - Gate

Features



Ultra-low On Resistance



Unclamped Inductive Switching (UIS) rated



Low package inductance

- easy to drive and to protect



175 °C Operating Temperature

Advantages



Easy to mount



Space savings



High power density

V

DSS

I

D25

R

DS(on)

1

7

2, 3 - Source 4 - NC (cut) 5,6,7 - Source TAB (8) - Drain

=85 V =88 A

(TAB)

ΩΩ

Ω

ΩΩ

≤≤

≤ 11 m

≤≤

Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max.

BV

V

I

GSS

I

DSS

GS(th)

VGS= 0 V, ID = 250 μA85V

VDS= VGS, ID = 100 μA 2.0 4.0 V

VGS= ± 20 V, VDS = 0 V ± 200 nA

VDS= V

DSS

2 μA

VGS= 0 V TJ = 150°C 150 μA

R

DS(on)

VGS= 10 V, ID = 25 A, Note 1 8 11 mΩ

Applications



Automotive

- Motor Drives

- 42V Power Bus

- ABS Systems



DC/DC Converters and Off-line UPS



Primary Switch for 24V and 48V

Systems



High Current Switching

Applications

DS99641 (11/06)

IXTA88N085T7

Symbol Test Conditions Characteristic Values

(TJ = 25°C unless otherwise specified) Min. Typ. Max.

g

C

t

Q

R

fs

iss

oss

rss

d(on)

r

d(off)

f

g(on)

gs

gd

thJC

VDS= 10 V; ID = 0.5 I

, Note 1 40 63 S

D25

3140 pF

VGS = 0 V, VDS = 25 V, f = 1 MHz 484 pF

105 pF

Resistive Switching Times 20 ns

VGS = 10 V, VDS = 0.5 V

, ID = 25 A 54 ns

DSS

RG = 5 Ω (External) 42 ns

29 ns

69 nC

VGS= 10 V, VDS = 0.5 V

, ID = 25 A 18 nC

DSS

15 nC

0.65°C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values TJ = 25°C unless otherwise specified) Min. Typ. Max.

I

S

I

SM

V

SD

t

rr

VGS = 0 V 88 A

Pulse width limited by T

JM

240 A

IF = 25 A, VGS = 0 V, Note 1 1.0 V

IF = 25 A, -di/dt = 100 A/μs90ns

VR = 40 V, VGS = 0 V

TO-263 (7-lead) (IXTA...7) Outline

Pins: 1 - Gate

2, 3 - Source 4 - Drain 5,6,7 - Source Tab (8) - Drain

Notes: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %;

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a preproduction design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice.

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2 7,071,537

IXTA88N085T7

Fig. 1. Output Characteristics

@ 25ºC

90

80

70

60

50

40

- Amperes

D

I

30

20

10

0

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9

V

= 10V

GS

9V 8V 7V

VDS - Volts

6V

5V

Fig. 3. Output Characteristics

@ 150ºC

90

80

70

60

50

40

- Amperes

D

I

30

20

10

0

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1 .8

V

= 10V

GS

9V 8V 7V

VDS - Volts

6V

5V

Fig. 2. Extended Output Characteristics

@ 25ºC

320

V

= 10V

GS

280

240

200

160

- Amperes

D

I

120

80

40

0

024681012141618

9V

8V

7V

6V

5V

VDS - Volts

Fig. 4. R

Normalized to ID = 44A Value

DS(on)

vs. Junction Temperature

2.6

V

= 10V

GS

2.4

2.2

2.0

1.8

1.6

- Normalized

1.4

DS(on)

R

1.2

1.0

0.8

0.6

-50 -25 0 25 50 75 100 125 150 175

I D = 88A

I D = 44A

TJ - Degrees Centigrade

Fig. 5. R

Normalized to ID = 44A Value

DS(on)

vs. Drain Current

3.2

V

= 10V

GS

3

2.8

2.6

2.4

2.2

2

- Normalized

1.8

DS(on )

1.6

R

1.4

1.2

1

0.8

15 V - - - -

0 40 80 120 160 200 240 280

ID - Amperes

TJ = 175ºC

TJ = 25ºC

Fig. 6. Drain Current vs. Case Temperature

100

90

80

External Lead Current Limit

70

TO-263 & TO-220

60

50

- Amperes

D

40

I

30

20

10

0

-50 -25 0 25 50 75 100 125 150 175

TC - Degrees Centigrade

IXTA88N085T7

s

Fig. 7. Input Admittance

160

140

120

100

80

- Amperes

D

I

60

40

20

0

3 3 .5 4 4.5 5 5.5 6 6.5 7

T

= -40ºC

J

25 ºC 15 0ºC

VGS - Volts

Fig. 9. Forward Voltage Drop of

Intrinsic Diode

200

180

160

140

120

100

- Amperes

S

80

I

60

40

20

0

0.4 0.5 0.6 0.7 0 .8 0.9 1 1.1 1.2 1.3 1.4

T

J

= 150ºC

TJ = 25ºC

VSD - Volts

Fig. 8. Transconductance

90

80

70

60

50

- Siemens

40

f s

g

30

20

10

0

0 20 40 60 80 100 120 140 160

T

J

= - 40ºC

25ºC

150ºC

ID - Amperes

Fig. 10. Gate Charge

10

V

= 43V

DS

9

8

7

6

5

- Volts

GS

V

4

3

2

1

0

= 25A

I

D

I

= 10mA

G

0 5 10 15 20 25 30 35 40 45 50 55 60 65 70

QG - NanoCoulombs

Fig. 11. Capacitance

10,000

f = 1 MHz

C

iss

1,000

C

oss

100

Capacitance - PicoFarad

10

0 5 10 15 20 25 30 35 40

C

VDS - Volts

rss

1.00

0.10

- ºC / W

(th)JC

Z

0.01

0.0001 0.001 0.01 0.1 1 10

Fig. 12. Maximum Transient Thermal

Impedance

Pulse Width - Seconds

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA88N085T7

s

Fig. 13. Resistive Turn-on

Rise Time vs. Junction Temperature

70

R

= 5

G

V

= 10V

GS

= 44V

DS

65

60

55

50

45

40

- Nanosecond

r

35

t

30

25

20

15

I D = 20A

25 35 45 55 65 75 85 95 105 115 125

I D = 40A

TJ - Degrees Centigrade

Fig. 15. Resistive Turn-on

Switching Times vs. Gate Resistance

120

t

110

100

- Nanoseconds

r

t

r

TJ = 125ºC, VGS = 10V

V

90

80

70

60

50

40

30

20

10

5 7 9 111315171921232527293133

= 44V

DS

t

- - - -

d(on)

RG - Ohms

I D = 40A, 20A

Fig. 14. Resistive Turn-on

Rise Time vs. Drain Current

70

Ω

65

60

55

50

R

= 5

Ω

G

V

= 10V

GS

V

= 44V

DS

20 22 24 26 28 30 32 34 36 38 40

- Nanosecond

r

t

45

40

35

30

25

20

15

TJ = 25ºC

TJ = 125ºC

ID - Amperes

Fig. 16. Resistive Turn-off

Switching Times vs. Junction Temperature

41

39

37

t

d ( o n )

35

33

- Nanoseconds

31

29

27

25

23

21

19

33

32

31

30

- Nanosecond

f

t

29

28

27

25 35 45 55 65 75 85 95 105 115 125

I D = 20A

I D = 40A

t

f

= 44V

DS

t

d(off)

RG = 5Ω, VGS = 10V

V

TJ - Degrees Centigrade

- - - -

52

49

t

d ( o f f )

46

- Nanosecond

43

40

37

34

Fig. 17. Resistive Turn-off

Switching Times vs. Drain Current

33

t

32

TJ = 125ºC

31

RG = 5Ω, VGS = 10V

V

f

= 44V

DS

t

d(off)

- - - -

58

54

t

d ( o f f )

50

- Nanoseconds

30

- Nanoseconds

f

29

t

28

27

20 22 24 26 28 30 32 34 36 38 40

TJ = 25ºC

46

42

38

34

ID - Amperes

130

120

110

100

90

80

70

- Nanoseconds

60

f

t

50

40

30

20

5 7 9 11 13 15 17 19 21 23 25 27 29 31 33

Fig. 18. Resistive Turn-off

Switching Times vs. Gate Resistance

t

f

TJ = 125ºC, VGS = 10V

V

= 44V

DS

t

d(off)

- - - -

RG - Ohms

I D = 20A

I D = 40A

IXYS REF: T_88N085T (3V) 9-15-06-A.xls

220

200

180

160

140

120

100

80

60

40

20

0

d ( o f f )

t

- Nanoseconds