Datasheet ixta80n10t7 Datasheet

Preliminary Technical Information

TrenchMV

TM

IXTA80N10T7

Power MOSFET

N-Channel Enhancement Mode Avalanche Rated

Symbol Test Conditions Maximum Ratings

V

DSS

V

DGR

V

GSM

I

D25

I

DM

I

AR

E

AS

dv/dt I

TJ= 25°C to 175°C 100 V TJ= 25°C to 175°C; RGS = 1 MΩ 100 V

Transient ± 30 V

TC= 25°C80A TC= 25°C, pulse width limited by T

JM

220 A

TC= 25°C25A TC= 25°C 400 mJ

≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ V

S

DSS

3 V/ns

TJ≤ 175°C, RG = 15 Ω

P

T T T

T T

D

J

JM

stg

L

SOLD

TC= 25°C 230 W

-55 ... +175 °C 175 °C

-55 ... +175 °C

1.6 mm (0.062 in.) from case for 10 s 300 °C Plastic body for 10 seconds 260 °C

Weight 3g

TO-263 (7-lead) (IXTA..7)

Pin-out:1 - Gate

Features



Ultra-low On Resistance



Unclamped Inductive Switching (UIS) rated



Low package inductance

- easy to drive and to protect



175 °C Operating Temperature

V

DSS

I

D25

R

DS(on)

1

7

2, 3 - Source 4 - NC (cut) 5,6,7 - Source TAB (8) - Drain

= 100 V =80 A

(TAB)

ΩΩ

Ω

ΩΩ

≤≤

≤ 14 m

≤≤

Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max.

BV

V

I

GSS

I

DSS

GS(th)

VGS= 0 V, ID = 250 μA 100 V

VDS= VGS, ID = 100 μA 2.5 4.5 V

VGS= ± 20 V, VDS = 0 V ± 200 nA

VDS= V

DSS

5 μA

VGS= 0 V TJ = 150°C 150 μA

R

DS(on)

VGS= 10 V, ID = 25 A, Note 1 11.5 14 mΩ

Advantages



Easy to mount



Space savings



High power density

Applications



Automotive

- Motor Drives

- 42V Power Bus

- ABS Systems



DC/DC Converters and Off-line UPS



Primary Switch for 24V and 48V

Systems



Distributed Power Architechtures

and VRMs



Electronic Valve Train Systems



High Current Switching

Applications



High Voltage Synchronous Recifier

DS99706 (11/06)

IXTA80N10T7

Symbol Test Conditions Characteristic Values

(TJ = 25°C unless otherwise specified) Min. Typ. Max.

g

C

t

Q

R

fs

iss

oss

rss

d(on)

r

d(off)

f

g(on)

gs

gd

thJC

VDS= 10 V; ID = 40 A, Note 1 33 55 S

3040 pF

VGS = 0 V, VDS = 25 V, f = 1 MHz 420 pF

90 pF

Resistive Switching Times 31 ns

VGS = 10 V, VDS = 0.5 V

, ID = 10 A 54 ns

DSS

RG = 15 Ω (External) 40 ns

48 ns

60 nC

VGS= 10 V, VDS = 0.5 V

, ID = 25 A 21 nC

DSS

15 nC

0.65°C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values TJ = 25°C unless otherwise specified) Min. Typ. Max.

I

S

I

SM

V

SD

t

rr

VGS = 0 V 80 A

Pulse width limited by T

JM

220 A

IF = 25 A, VGS = 0 V, Note 1 1.1 V

IF = 25 A, -di/dt = 100 A/μs 100 ns

VR = 25 V, VGS = 0 V

TO-263 (7-lead) (IXTA 7) Outline

Pins: 1 - Gate

2, 3 - Source 4 - Drain 5,6,7 - Source Tab (8) - Drain

Notes: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %.

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a preproduction design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice.

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2 7,071,537

IXTA80N10T7

Fig. 1. Output Characteristics

@ 25ºC

80

70

60

50

40

- Amperes

D

I

30

20

10

0

0 0.2 0.4 0.6 0.8 1 1.2

V

GS

9 V 8 V

VDS - Volts

= 10V

7V

6V

Fig. 3. Output Characteristics

@ 150ºC

80

70

60

50

40

- Amperes

D

I

30

20

10

0

0 0.2 0.4 0.6 0.8 1 1.2 1 .4 1.6 1 .8 2 2.2 2.4

V 9V

8V

VDS - Volts

GS

= 10V

7V

6V

5V

Fig. 2. Extended Output Characteristics

@ 25ºC

250

225

200

175

150

125

- Amperes

100

D

I

75

50

25

0

0 2 4 6 8 101214161820

Fig. 4. R

V

= 10V

GS

9V

8V

7V

6V

VDS - Volts

Nor m alized to ID = 40A Value

DS(on)

vs. Junction Temperature

2.8

V

= 10V

GS

2.6

2.4

2.2

2.0

1.8

- Normalized

1.6

1.4

DS(on)

R

1.2

1.0

0.8

0.6

-50 -25 0 25 50 75 100 125 150 175

I D = 80A

I D = 40A

TJ - Degrees Centigrade

Fig. 5. R

Normalized to ID = 40A Value

DS(on)

vs. Drain Current

4.6

4.2

3.8

3.4

2.6

- Normalized

2.2

DS(on)

R

1.8

1.4

0.6

V

= 10 V

GS

1 5V - - - -

3

1

0 25 50 75 100 125 150 175 200 225 250

ID - Amperes

TJ = 175ºC

TJ = 25ºC

Fig. 6. Drain Current vs. Case Temperature

90

80

70

60

50

40

- Amperes

D

I

30

20

10

0

-50 -25 0 25 50 75 100 125 150 175

TC - Degrees Centigrade

IXTA80N10T7

s

Fig. 7. Input Admittance

140

120

100

80

- Amperes

60

D

I

T

= 150ºC

J

40

20

0

4 4.5 5 5.5 6 6.5 7 7 .5 8

25 ºC

- 40 ºC

VGS - Volts

Fig. 9. Forward Voltage Drop of

Intrins ic Diod e

250

225

200

175

150

125

- Amperes

S

100

I

75

50

25

0

0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5

T

= 150ºC

J

VSD - Volts

TJ = 25ºC

Fig. 8. Transconductance

80

T

= - 40ºC

J

70

60

50

40

- Siemens

f s

30

g

20

10

0

0 20 40 60 80 100 120 140 160

25ºC

150ºC

ID - Amperes

Fig. 10. Gate Charge

10

9

V

= 50V

DS

= 25A

I

D

8

7

6

5

- Volts

GS

V

4

3

2

1

0

= 10mA

I

G

0 102030405060

QG - NanoCoulombs

Fig. 11. Capacitance

10,000

f = 1 MHz

C

iss

1,000

C

oss

100

Capacitance - PicoFarad

10

0 5 10 15 20 25 30 35 40

C

VDS - Volts

rss

1.00

0.10

- ºC / W

(th)JC

Z

0.01

0.0001 0.001 0.01 0.1 1 10

Fig. 12. Maximum Transient Thermal

Impedance

Pulse W idth - Seconds

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA80N10T7

Fig. 13. Resistive Turn-on

Rise Time vs. Junction Temperature

70

R

= 15

G

65

60

55

50

- Nanoseconds

r

t

45

I D = 10A

40

35

25 35 45 55 65 75 85 95 105 115 125

I D = 30A

V

= 10V

GS

= 50V

DS

TJ - Degrees Centigrade

Fig. 15. Resistive Turn-on

Switching Times vs. Gate Resistance

260

240

220

200

180

160

140

120

100

- Nanoseconds

r

t

r

TJ = 125ºC, VGS = 10V

V

80

60

40

20

0

15 20 25 30 35 40 45 50 55

= 50V

DS

t

d(on)

- - - -

I D = 30A

I D = 10A

RG - Ohms

Fig. 14. Resistive Turn-on

Rise Time vs. Drain Current

70

R

= 15

Ω

G

Ω

65

60

55

50

- Nanoseconds

r

t

45

40

35

V

= 10V

GS

V

= 50V

DS

10 12 14 16 18 20 22 24 26 28 30

TJ = 25ºC

TJ = 125ºC

ID - Amperes

Fig. 16. Resistive Turn-off

Switching Times vs. Junction Temperature

95

90

85

80

75

70

65

60

55

50

45

40

35

30

d ( o n )

t

- Nanoseconds

49

48

t

f

= 50V

DS

I D = 30A

t

d(off)

- - - -

I D = 10A

47

RG =15Ω, VGS = 10V

46

V

45

44

43

- Nanoseconds

f

t

42

41

40

39

25 35 45 55 65 75 85 95 105 115 125

TJ - Degrees Centigrade

76

72

68

64

60

56

52

48

44

40

36

t

d ( o f f )

- Nanoseconds

Fig. 17. Resistive Turn-off

Switching Times vs. Drain Current

50

49

48

47

46

45

44

43

- Nanoseconds

f

42

t

41

40

39

38

10 12 14 16 18 20 22 24 26 28 30

t

RG = 15Ω, VGS = 10V

V

ID - Amperes

f

= 50V

DS

t

d(off)

TJ = 125ºC

TJ = 25ºC

- - - -

78

74

70

66

62

58

54

50

46

42

38

34

30

Fig. 18. Resistive Turn-off

Switching Times vs. Gate Resistance

160

t

150

t

d ( o f f )

- Nanoseconds

140

130

120

110

100

- Nanoseconds

f

t

f

TJ = 125ºC, VGS = 10V

V

90

80

70

60

50

40

15 20 25 30 35 40 45 50 55

= 50V

DS

I D = 10A

t

d(off)

I D = 30A

- - - -

RG - Ohms

IXYS REF: T_80N10T (3V) 6-21-06.xls

270

250

230

210

190

170

150

130

110

90

70

50

30

t

d ( o f f )

- Nanoseconds