Page 1
High Voltage MOSFET
IXTA 2N80
V
DSS
= 800 V
IXTP 2N80
N-Channel Enhancement Mode
Avalanche Energy Rated
Preliminary Data
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt I
P
D
T
J
T
JM
T
stg
M
d
Weight 4 g
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
Symbol Test Conditions Characteristic Values
T
= 25°C to 150°C 800 V
J
T
= 25°C to 150°C; RGS = 1 MΩ 800 V
J
Continuous ±20 V
Transient ±30 V
T
= 25°C2A
C
T
= 25°C, pulse width limited by T
C
JM
8A
2 A
T
= 25°C6mJ
C
T
= 25°C 200 mJ
C
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
S
TJ≤ 150°C, RG = 18 Ω
T
= 25°C54W
C
, 5 V/ns
DSS
-55 ... +150 °C
150 °C
-55 ... +150 °C
Mounting torque 1.13/10 Nm/lb.in.
(T
= 25°C, unless otherwise specified)
J
min. typ. max.
I
D25
R
DS(on)
= 2 A
= 6.2
Ω Ω
Ω
Ω Ω
TO-220AB (IXTP)
G
D
S
D (TAB)
TO-263 AA (IXTA)
G
S
D (TAB)
G = Gate, D = Drain,
S = Source, TAB = Drain
Features
y International standard packages
y Low R
HDMOSTM process
DS (on)
y Rugged polysilicon gate cell structure
y Low package inductance (< 5 nH)
- easy to drive and to protect
y Fast switching times
Applications
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
© 2003 IXYS All rights reserved
VGS= 0 V, I
VDS= VGS, I
V
= ±20 V
GS
VDS= V
VGS= 0 V T
= 250 µA 800 V
D
= 250 µA 2.5 5.5 V
D
DC
DSS
VGS= 10 V, ID = 0.5 I
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
, V
= 0 ±100 nA
DS
= 125°C 500 µA
J
D25
25 µA
6.2 Ω
y Switch-mode and resonant-mode
power supplies
y Flyback inverters
y DC choppers
Advantages
y Space savings
y High power density
98541B(01/03)
Page 2
IXTA 2N80
IXTP 2N80
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
J
VDS= 20 V; ID = 0.5 • I
, pulse test 1.0 2.0 S
D25
VGS= 0 V, VDS = 25 V, f = 1 MHz 56 pF
VGS= 10 V, VDS = 0.5 • V
R
= 18Ω, (External) 30 ns
G
VGS= 10 V, VDS = 0.5 • V
, ID = 0.5 I
DSS
, ID = 0.5 I
DSS
(IXTP) 0.5 K/W
min. typ. max.
440 pF
15 pF
15 ns
D25
18 ns
15 ns
22 nC
D25
5.5 nC
12 nC
2.3 K/W
Source-Drain Diode Characteristic Values
(T
= 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
J
TO-220 AD Dimensions
Pins: 1 - Gate 2 - Drain
3 - Source 4 - Drain
Bottom Side
I
S
I
SM
V
SD
t
rr
VGS= 0 V 2 A
Repetitive; pulse width limited by T
JM
8A
IF= IS, VGS = 0 V, 1.8 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IF= I
, -di/dt = 100 A/µs, V
S
= 100 V 510 ns
R
TO-263 AA Outline
1. Gate
2. Drain
3. Source
4. Drain
Bottom Side
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.06 4.83 .160 .190
A1 2.03 2.79 .080 .110
b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055
c 0.46 0.74 .018 .029
c2 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 7.11 8.13 .280 .320
E 9.65 10.29 .380 .405
E1 6.86 8.13 .270 .320
e 2.54 BSC .100 BSC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.38 0 .015
R 0.46 0.74 .018 .029
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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