Datasheet ixta240n055t7 Datasheet

Preliminary Technical Information

TrenchMV

TM

IXTA240N055T7

Power MOSFET

N-Channel Enhancement Mode
Avalanche Rated

Symbol Test Conditions Maximum Ratings

V

DSS

V

DGR

V

GSM

I

D25

I

LRMS

I

DM

I

AR

E

AS

dv/dt I

TJ= 25°C to 175°C55V
TJ= 25°C to 175°C; RGS = 1 MΩ 55 V

Transient ± 20 V

TC= 25°C 240 A
Package Current Limit, RMS 120 A
TC= 25°C, pulse width limited by T

JM

650 A

TC= 25°C25A
TC= 25°C 1.0 J

≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ V

S

DSS

3 V/ns

TJ≤ 175°C, RG = 5 Ω

V
I

D25

R

DSS

DS(on)

=55 V
= 240 A

≤≤

≤ 3.6 m

≤≤

TO-263 (7-lead) (IXTA..7)

1

7

Pin-out:1 - Gate

2, 3 - Source
4 - NC (cut)
5,6,7 - Source
TAB (8) - Drain

(TAB)

ΩΩ

Ω

ΩΩ

P

D

T

J

T

JM

T

stg

T

L

T

SOLD

Weight 3g

TC= 25°C 480 W

-55 ... +175 °C
175 °C

-40 ... +175 °C

1.6 mm (0.062 in.) from case for 10 s 300 °C
Plastic body for 10 seconds 260 °C

Features



Ultra-low On Resistance



Unclamped Inductive Switching (UIS)
rated



Low package inductance

- easy to drive and to protect



175 °C Operating Temperature

Advantages



Easy to mount



Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.

BV

V

I

GSS

I

DSS

DSS

GS(th)

VGS= 0 V, ID = 250 μA55V

VDS= VGS, ID = 250 μA 2.0 4.0 V

VGS= ± 20 V, VDS = 0 V ± 200 nA

VDS= V

DSS

5 μA

VGS= 0 V TJ = 150°C 250 μA

R

DS(on)

VGS= 10 V, ID = 25 A, Note 1 2.7 3.6 mΩ

Space savings



High power density

Applications



Automotive

- Motor Drives

- High Side Switch

- 12V Battery

- ABS Systems



DC/DC Converters and Off-line UPS



Primary- Side Switch



High Current Switching

Applications

© 2006 IXYS CORPORATION All rights reserved

DS99685 (11/06)

IXTA240N055T7

Symbol Test Conditions Characteristic Values

(TJ = 25°C unless otherwise specified) Min. Typ. Max.

g

C

C

C

t

t

t

t

Q

Q

Q

R

fs

iss

oss

rss

d(on)

r

d(off)

f

g(on)

gs

gd

thJC

VDS= 10 V; ID = 60 A, Note 1 75 132 S

7600 pF

VGS = 0 V, VDS = 25 V, f = 1 MHz 1240 pF

260 pF

Resistive Switching Times 39 ns

VGS = 10 V, VDS = 0.5 V

, ID = 25 A 54 ns

DSS

RG = 5 Ω (External) 63 ns

75 ns

170 nC

VGS= 10 V, VDS = 0.5 V

, ID = 25 A 32 nC

DSS

48 nC

0.31°C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values
TJ = 25°C unless otherwise specified) Min. Typ. Max.

I

S

I

SM

V

SD

t

rr

VGS = 0 V 240 A

Pulse width limited by T

JM

650 A

IF = 50 A, VGS = 0 V, Note 1 1.2 V

IF = 25 A, -di/dt = 100 A/μs70ns

VR = 25 V, VGS = 0 V

TO-263 (7-lead) (IXTA...7) Outline

Pins: 1 - Gate

2, 3 - Source
4 - Drain
5,6,7 - Source
Tab (8) - Drain

Notes: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %;

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre­production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2 7,071,537

IXTA240N055T7

Fig. 1. Output Characteristics

@ 25ºC

200

180

160

140

120

100

- Amperes

D

80

I

60

40

20

0

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7

V

GS

9V
8V
7V

VDS - Volts

= 10V

6V

5V

Fig. 3. Output Characteristics

@ 150ºC

200

180

160

140

120

100

- Amperes

D

80

I

60

40

20

0

0 0.2 0.4 0.6 0.8 1 1.2 1.4

V

= 10V

GS

9V
8V
7V

VDS - Volts

6V

5V

Fig. 2. Extended Output Characteristics

@ 25ºC

330

V

= 10V

GS

8V

7V

6V

90

60

30

0

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

5V

- Amperes

D

I

300

270

240

210

180

150

120

VDS - Volts

Fig. 4. R

Normalized to ID = 120A Value

DS(on)

vs. Junction Temperature

2.2

V

= 10V

GS

2.0

1.8

1.6

1.4

- Normalized

1.2

DS(on)

R

1.0

0.8

0.6

-50 -25 0 25 50 75 100 125 150 175

I D = 240A

I D = 120A

TJ - Degrees Centigrade

Fig. 5. R

Normalized to ID = 120A Value

DS(on)

vs. Drain Current

2.2

2

1.8
V

= 10V

GS

15V - - - -

1.6

- Normalized

1.4

DS(on)

R

1.2

1

0.8

0 40 80 120 160 200 240 280 320

ID - Amperes

© 2006 IXYS CORPORATION All rights reserved

TJ = 175ºC

TJ = 25ºC

Fig. 6. Drain Current vs. Case Temperature

140

External Lead Current Limit for TO-263 (7-Lead)

120

100

80

External Lead Current Limit for TO-3P, TO-220, & TO-263

- Amperes

60

D

I

40

20

0

-50 -25 0 25 50 75 100 125 150 175

TC - Degrees Centigrade

IXTA240N055T7

s

Fig. 7. Input Admittance

270

240

210

180

150

120

- Amperes

D

I

90

60

30

0

33.544.555.566.5

T

= 150ºC

J

25 ºC

- 40 ºC

VGS - Volts

Fig. 9. Forward Voltage Drop of

Intrinsic Diode

300

270

240

210

180

150

- Amperes

S

120

I

90

60

30

0

0.4 0.5 0.6 0.7 0.8 0 .9 1 1.1 1.2 1.3

T

= 150ºC

J

VSD - Volts

TJ = 25ºC

Fig. 8. Transconductance

200

T

= - 40ºC

J

180

160

140

120

100

- Siemens

f s

80

g

60

40

20

0

0 40 80 120 160 200 240 280

25ºC

150ºC

ID - Amperes

Fig. 10. Gate Charge

10

V

= 27.5V

DS

9

8

7

6

- Volts

5

GS

V

4

3

2

1

0

I

= 25A

D

I

= 10mA

G

0 20 40 60 80 100 120 140 160 180

QG - Nano Co ulo mb s

Fig. 12. Maximum Transient Thermal

Impedance

10,000

1,000

Fig. 11. Capacitance

C

iss

C

oss

1.00

0.10

- ºC / W

(th)JC

Z

Capacitance - PicoFarad

C

f = 1 MHz

100

0 5 10 15 20 25 30 35 40

VDS - Volts

rss

0.01

0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA240N055T7

s

s

s

s

Fig. 13. Resistive Turn-on

Rise Time vs. Junction Temperature

57

R

= 5

G

54

51

48

45

42

- Nanosecond

r

t

39

36

33

30

25 35 45 55 65 75 85 95 105 115 125

I D = 25A

I D = 50A

V

GS

V

DS

TJ - Degrees Centigrade

Fig. 15. Resistive Turn-on

Switching Times vs. Gate Resistance

180

t

r

160

TJ = 125ºC, VGS = 10V

V

140

120

100

- Nanoseconds

80

r

t

I D = 50A

60

25 A

40

20

4 6 8 101214161820

= 30V

DS

t

d(on)

- - - -

RG - Ohms

I D = 50A
25 A

Ω

= 10V

= 30V

Fig. 14. Resistive Turn-on

Rise Time vs. Drain Current

60

57

54

51

R

= 5

Ω

G

= 10V

V

GS

- Nanosecond

r

t

48

45

42

39

36

33

30

= 30V

V

DS

25 30 35 40 45 50

TJ = 25ºC

TJ = 125ºC

ID - Amperes

Fig. 16. Resistive Turn-off

Switching Times vs. Junction Temperature

66

62

t

58

d ( o n )

54

- Nanoseconds

50

46

42

38

34

78

76

74

72

70

68

66

- Nanosecond

f

t

64

62

60

58

25 35 45 55 65 75 85 95 105 115 125

t

f

= 30V

DS

I D = 25A

t

d(off)

- - - -

RG = 5Ω, VGS = 10V

V

I D = 50A

TJ - Degrees Centigrade

100

96

92

88

84

80

76

72

68

64

60

d ( o f f )

t

- Nanosecond

Fig. 17. Resistive Turn-off

Switching Times vs. Drain Current

78

76

74

72

70

68

t

RG = 5Ω, VGS = 10V

66

- Nanos econds

f

V

t

64

62

60

58

24 28 32 36 40 44 48

f

= 30V

DS

t

d(off)

- - - -

TJ = 25ºC, 125ºC

TJ = 25ºC, 125ºC

ID - Amperes

© 2006 IXYS CORPORATION All rights reserved

100

96

92

88

84

80

76

72

68

64

60

d ( o f f )

t

- Nanos econds

225

200

175

150

125

- Nanoseconds

f

t

100

75

50

4 6 8 101214161820

Fig. 18. Resistive Turn-off

Switching Times vs. Gate Resistance

t

f

TJ = 125ºC, VGS = 10V

V

= 30V

DS

t

d(off)

- - - -

RG - Ohms

I D = 25A

I D = 50A

IXYS REF: T_240N055T (61) 11-16-06-B.xls

340

300

260

220

180

140

100

60

t

d ( o f f )

- Nanoseconds