Datasheet ixta220n075t7 Datasheet

Preliminary Technical Information

TrenchMV

TM

Power MOSFET

IXTA220N075T7

V I

D25

R

N-Channel Enhancement Mode Avalanche Rated

Symbol Test Conditions Maximum Ratings

V

DSS

V

DGR

V

GSM

I

D25

I

LRMS

I

DM

I

AR

E

AS

dv/dt I

TJ= 25°C to 175°C75V TJ= 25°C to 175°C; RGS = 1 MΩ 75 V

Transient ± 20 V

TC= 25°C 220 A Package Current Limit, RMS 120 A TC= 25°C, pulse width limited by T

JM

600 A

TC= 25°C25A TC= 25°C 1.0 J

≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ V

S

DSS

3 V/ns

TJ≤ 175°C, RG = 3.3 Ω

P

D

T

J

T

JM

T

stg

T

L

T

sold

TC= 25°C 480 W

-55 ... +175 °C 175 °C

-55 ... +175 °C

1.6 mm (0.062 in.) from case for 10 s 300 °C Plastic body for 10 seconds 260 °C

Weight 3g

TO-263 (7-lead) (IXTA..7)

Pin-out:1 - Gate

Features



Ultra-low On Resistance



Unclamped Inductive Switching (UIS) rated



Low package inductance

- easy to drive and to protect



175 °C Operating Temperature

Advantages



Easy to mount



Space savings



High power density

DSS

DS(on)

1

7

2, 3 - Source 4 - NC (cut) 5,6,7 - Source TAB (8) - Drain

=75 V = 220 A

(TAB)

ΩΩ

Ω

ΩΩ

≤≤

≤ 4.5 m

≤≤

Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max.

BV

V

I

GSS

I

DSS

GS(th)

VGS= 0 V, ID = 250 μA75V

VDS= VGS, ID = 250 μA 2.0 4.0 V

VGS= ± 20 V, VDS = 0 V ± 200 nA

VDS= V

DSS

5 μA

VGS= 0 V TJ = 150°C 250 μA

R

DS(on)

VGS= 10 V, ID = 25 A, Note 1 3.6 4.5 mΩ

Applications



Automotive

- Motor Drives

- 42V Power Bus

- ABS Systems



DC/DC Converters and Off-line UPS



Primary Switch for 24V and 48V

Systems



High Current Switching

Applications

DS99693 (11/06)

IXTA220N075T7

Symbol Test Conditions Characteristic Values

(TJ = 25°C unless otherwise specified) Min. Typ. Max.

g

C

t

Q

R

fs

iss

oss

rss

d(on)

r

d(off)

f

g(on)

gs

gd

thJC

VDS= 10 V; ID = 60 A, Note 1 75 120 S

7700 pF

VGS = 0 V, VDS = 25 V, f = 1 MHz 1100 pF

230 pF

Resistive Switching Times 29 ns

VGS = 10 V, VDS = 0.5 V

, ID = 25 A 65 ns

DSS

RG = 3.3 Ω (External) 55 ns

47 ns

165 nC

VGS= 10 V, VDS = 0.5 V

, ID = 25 A 40 nC

DSS

50 nC

0.31°C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values TJ = 25°C unless otherwise specified) Min. Typ. Max.

I

S

I

SM

V

SD

t

rr

VGS = 0 V 220 A

Pulse width limited by T

JM

600 A

IF = 25 A, VGS = 0 V, Note 1 1.0 V

IF = 25 A, -dI/dt = 100 A/μs80ns VR = 40 V, VGS = 0 V

TO-263 (7-lead) (IXTA 7) Outline

Pins: 1 - Gate

2, 3 - Source 4 - Drain 5,6,7 - Source Tab (8) - Drain

Notes: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %.

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a preproduction design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice.

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2 7,071,537

IXTA220N075T7

Fig. 1. Output Characteristics

@ 25ºC

220

200

180

160

140

120

100

- Amperes

D

I

80

60

40

20

0

0 0 .1 0.2 0.3 0.4 0.5 0 .6 0.7 0.8 0.9 1 1 .1

V

GS

8V 7V

VDS - Volts

= 10V

6V

5V

Fig. 3. Output Characteristics

@ 150ºC

220

200

180

160

140

120

100

- Amperes

D

I

80

60

40

20

0

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2

VDS - Volts

V

= 10V

GS

8V 7V

6V

5V

Fig. 2. Extended Output Characteristics

@ 25ºC

300

V

= 10V

GS

8V 7V

6V

5V

0

00.511.522.533.544.5

- Amperes

D

I

270

240

210

180

150

120

90

60

30

VDS - Volts

Fig. 4. R

Normalized to ID = 110A Value

DS(on)

vs. Junction Temperature

2.4

V

2.2

2

1.8

1.6

- Normalized

1.4

DS(on)

1.2

R

1

0.8

0.6

-50 -25 0 25 50 75 100 125 150 175

GS

= 10V

TJ - Degrees Centigrade

I D = 220A

I D = 110A

Fig. 5. R

Normalized to ID = 110A Value

DS(on)

vs. Drain Current

2.6

2.4

2.2

2

V

= 10V

GS

1.8

1.6

- Normalized

1.4

DS(on)

R

1.2

1

0.8

0.6

15V - - - - -

0 30 60 90 120 150 180 210 240 270 300

ID - Amperes

TJ = 175ºC

TJ = 25ºC

Fig. 6. Drain Current vs. Case Temperature

140

External Lead Current Limit for TO-263 (7-Lead)

120

100

80

External Lead Current Limit for TO-3P, TO-220, & TO-263

- Amperes

60

D

I

40

20

0

-50 -25 0 25 50 75 100 125 150 175

TC - Degrees Centigrade

IXTA220N075T7

s

Fig. 7. Input Admittance

220

200

180

160

140

120

100

- Amperes

D

I

80

60

40

20

0

33.544.555.56

T

= 150ºC

J

25 ºC

- 40 ºC

VGS - Volts

Fig. 9. Forward Voltage Drop of

Intrinsic Diode

270

240

210

180

150

120

- Amperes

S

I

90

60

30

0

0.4 0.5 0.6 0.7 0 .8 0.9 1 1.1 1.2 1.3

T

= 150ºC

J

VSD - Volts

TJ = 25ºC

Fig. 8. Transconductance

180

T

= - 40ºC

J

160

140

120

100

- Siemens

80

f s

g

60

40

20

0

0 20 40 60 80 100 120 140 160 180 200 220

25ºC

150ºC

ID - Amperes

Fig. 10. Gate Charge

10

V

= 37.5V

DS

I

= 25A

D

= 10mA

I

G

0 20 40 60 80 100 120 140 160 180

QG - NanoCoulombs

- Volts

GS

V

9

8

7

6

5

4

3

2

1

0

Fig. 12. Maximum Transient Thermal

Impedance

10,000

1,000

Fig. 11. Capacitance

C

iss

C

oss

1.00

0.10

Z(th)JC - ºC / W

Capacitance - PicoFarad

C

f = 1 MHz

100

0 5 10 15 20 25 30 35 40

VDS - Volts

rss

0.01

0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA220N075T7

s

Fig. 13. Resistive Turn-on

Rise Time vs. Junction Temperature

70

R

65

60

55

50

45

40

- Nanoseconds

r

t

35

30

25

20

25 35 45 55 65 75 85 95 105 115 125

I D = 50A

I D = 25A

G

V

GS

V

DS

= 3.3

= 10V

= 37.5V

TJ - Degrees Centigrade

Fig. 15. Resistive Turn-on

Switching Times vs. Gate Resistance

75

t

70

TJ = 125ºC, VGS = 10V

65

V

60

55

50

45

- Nanoseconds

r

t

40

35

30

25

2 4 6 8 101214 161820

r

= 37.5 V

DS

t

d(on)

- - - -

I D = 50A

RG - Ohms

I D = 25A

Fig. 14. Resistive Turn-on

Rise Time vs. Drain Current

75

Ω

70

65

60

R

= 3.3

Ω

G

55

50

45

- Nanosecond

r

40

t

35

30

25

20

V

= 10V

GS

V

= 37.5V

DS

24 26 28 30 32 34 36 38 40 42 44 46 48 50

TJ = 25ºC

TJ = 125ºC

ID - Amperes

Fig. 16. Resistive Turn-off

Switching Times vs. Junction Temperature

220

200

180

160

140

120

100

80

60

40

20

t

d ( o n )

- Nanoseconds

48.5

t

48.0

RG = 3.3Ω, VGS = 10V

V

47.5

47.0

46.5

46.0

- Nanoseconds

f

45.5

t

45.0

44.5

44.0

25 35 45 55 65 75 85 95 105 115 125

f

= 37.5 V

DS

t

d(off)

- - - -

I D = 25A

I D = 50A

TJ - Degrees Centigrade

84

80

t

76

d ( o f f )

72

- Nanoseconds

68

64

60

56

52

48

Fig. 17. Resistiv e Turn-off

Switching Times vs. Drain Current

49

48

47

46

- Nanoseconds

f

t

45

44

24 26 28 30 32 34 36 38 40 42 44 46 48 50

t

RG = 3.3Ω, VGS = 10V

V

TJ = 125ºC

TJ = 25ºC

f

= 37.5 V

DS

t

d(off)

- - - -

ID - Amperes

95

90

85

80

75

70

65

60

55

50

45

t

d ( o f f )

- Nanosecond

210

190

170

150

130

110

- Nanoseconds

f

t

90

70

50

30

2 4 6 8 10 12 14 16 18 20

Fig. 18. Resistive Turn-off

Switching Times vs. Gate Resistance

t

f

TJ = 125ºC, VGS = 10V

V

= 37.5 V

DS

t

d(off)

- - - -

RG - Ohms

I D = 25A

I D = 50A

IXYS REF: T_220N075T (61) 11-20-06-B.xls

340

310

280

250

220

190

160

130

100

70

t

d ( o f f )

- Nanoseconds