Datasheet ixta200n085t7 Datasheet

Preliminary Technical Information

TrenchMV

TM

IXTA200N085T7

Power MOSFET

N-Channel Enhancement Mode
Avalanche Rated

Symbol Test Conditions Maximum Ratings

V

DSS

V

DGR

V

GSM

I

D25

I

LRMS

I

DM

I

AR

E

AS

dv/dt I

TJ= 25°C to 175°C85V
TJ= 25°C to 175°C; RGS = 1 MΩ 85 V

Transient ± 20 V

TC= 25°C 200 A
Lead Limited, RMS 120 A
TC= 25°C, pulse width limited by T

JM

540 A

TC= 25°C25A
TC= 25°C 1.0 mJ

≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ V

S

DSS

3 V/ns

TJ≤ 175°C, RG = 5 Ω

V

DSS

I

D25

R

DS(on)

=85 V
= 200 A

≤≤

≤ 5.0 m

≤≤

TO-263 (7-lead) (IXTA..7)

1

7

Pin-out:1 - Gate

2, 3 - Source
4 - NC (cut)
5,6,7 - Source
TAB (8) - Drain

(TAB)

ΩΩ

Ω

ΩΩ

P

D

T

J

T

JM

T

stg

T

L

T

SOLD

Weight 3g

TC= 25°C 480 W

-55 ... +175 °C
175 °C

-55 ... +175 °C

1.6 mm (0.062 in.) from case for 10 s 300 °C
Plastic body for 10 seconds 260 °C

Features



Ultra-low On Resistance



Unclamped Inductive Switching (UIS)
rated



Low package inductance

- easy to drive and to protect



175 °C Operating Temperature

Advantages



Easy to mount



Space savings



High power density

Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.

BV

V

I

GSS

I

DSS

DSS

GS(th)

VGS= 0 V, ID = 250 μA85V

VDS= VGS, ID = 250 μA 2.0 4.0 V

VGS= ± 20 V, VDS = 0 V ± 200 nA

VDS= V

DSS

5 μA

VGS= 0 V TJ = 150°C 250 μA

R

DS(on)

VGS= 10 V, ID = 25 A, Note 1 4.0 5.0 mΩ

Applications



- Motor Drives

- 42V Power Bus

- ABS Systems



DC/DC Converters and Off-line UPS



Primary Switch for 24V and 48V

Systems



High Current Switching

Applications

Automotive

© 2006 IXYS CORPORATION All rights reserved

DS99702 (11/06)

IXTA200N085T7

Symbol Test Conditions Characteristic Values

(TJ = 25°C unless otherwise specified) Min. Typ. Max.

g

C

C

C

t

t

t

t

Q

Q

Q

R

fs

iss

oss

rss

d(on)

r

d(off)

f

g(on)

gs

gd

thJC

VDS= 10 V; ID = 60 A, Note 1 75 125 S

7600 pF

VGS = 0 V, VDS = 25 V, f = 1 MHz 1040 pF

200 pF

Resistive Switching Times 32 ns

VGS = 10 V, VDS = 0.5 V

, ID = 25 A 80 ns

DSS

RG = 5 Ω (External) 65 ns

64 ns

152 nC

VGS= 10 V, VDS = 0.5 V

, ID = 25 A 37 nC

DSS

42 nC

0.31°C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values
TJ = 25°C unless otherwise specified) Min. Typ. Max.

I

S

I

SM

V

SD

t

rr

VGS = 0 V 200 A

Pulse width limited by T

JM

540 A

IF = 25 A, VGS = 0 V, Note 1 1.0 V

IF = 25 A, -di/dt = 100 A/μs90ns

VR = 40 V, VGS = 0 V

TO-263 (7-lead) (IXTA...7) Outline

Pins: 1 - Gate

2, 3 - Source
4 - Drain
5,6,7 - Source
Tab (8) - Drain

Notes: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %.

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre­production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2 7,071,537

IXTA200N085T7

Fig. 1. Output Characteristics

@ 25ºC

200

180

160

140

120

100

- Amperes

D

80

I

60

40

20

0

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 .9 1 1.1

V

GS

8V
7V

VDS - Volts

= 10V

6V

5V

Fig. 3. Output Characteristics

@ 150ºC

200

180

160

140

120

100

- Amperes

D

80

I

60

40

20

0

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4

V

GS

8V
7V

VDS - Volts

= 10V

6V

5V

Fig. 2. Extended Output Characteristics

@ 25ºC

300

V

= 10V

GS

270

240

210

180

150

- Amperes

D

120

I

90

60

30

8V
7V

6V

5V

0

0123456

VDS - Volts

Fig. 4. R

Normalized to ID = 100A Value

DS(on)

vs. Junction Temperature

2.6

V

= 10V

GS

2.4

2.2

2.0

1.8

1.6

- Normalized

1.4

DS(on)

R

1.2

1.0

0.8

0.6

-50 -25 0 25 50 75 100 125 150 175

I D = 200A

I D = 100A

TJ - Degrees Centigrade

Fig. 5. R

Normalized to ID = 100A Value

DS(on)

vs. Drain Current

2.8

2.6

2.4

2.2

2

V

= 10V

GS

1.8

- Normalized

1.6

1.4

DS(on)

R

1.2

1

0.8

0.6

15V - - - -

0 40 80 120 160 200 240 280 320

ID - Amperes

© 2006 IXYS CORPORATION All rights reserved

TJ = 175ºC

TJ = 25ºC

Fig. 6. Drain Current vs. Case Temperature

140

External Lead Current Limit for TO-263 (7-Lead)

120

100

80

External Lead Current Limit for TO-3P, TO-220, & TO-263

- Amperes

60

D

I

40

20

0

-50 -25 0 25 50 75 100 125 150 175

TC - Degrees Centigrade

IXTA200N085T7

s

Fig. 7. Input Admittance

270

240

210

180

150

120

- Amperes

D

I

90

60

30

0

3 3.5 4 4.5 5 5.5 6 6.5

T

= -40ºC

J

25 ºC
150ºC

VGS - Volts

Fig. 9. Forward Voltage Drop of

Intrinsic Diode

270

240

210

180

150

120

- Amperes

S

I

90

60

30

0

0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3

T

= 150ºC

J

VSD - Volts

TJ = 25ºC

Fig. 8. Transconductance

180

160

140

120

100

- Siemens

80

f s

g

60

40

20

0

0 30 60 90 120 150 180 210 240 270 300

T

J

= - 40ºC

25ºC

150ºC

ID - Amp eres

Fig. 10. Gate Charge

10

9

V

= 43V

DS

I

= 25A

D

8

I

= 10mA

G

7

6

5

- Volts

GS

V

4

3

2

1

0

0 20 40 60 80 100 120 140 160

QG - NanoCoulombs

Fig. 12. Maximum Transient Thermal

Impedance

10,000

1,000

Fig. 11. Capacitance

C

iss

C

oss

- ºC / W

(th)JC

Z

1.00

0.10

Capacitance - PicoFarad

f = 1 MHz

100

0 5 10 15 20 25 30 35 40

C

VDS - Volts

rss

0.01

0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA200N085T7

s

s

Fig. 13. Resistive Turn-on

Rise Time vs. Junction Temperature

100

R

= 5

G

90

80

70

60

- Nanoseconds

r

t

50

40

30

25 35 45 55 65 75 85 95 105 115 125

I D = 25A

I D = 50A

V

V

= 10V

GS

= 43V

DS

TJ - Degrees Centigrade

Fig. 15. Resistive Turn-on

Switching Times vs. Gate Resistance

180

t

r

160

TJ = 125ºC, VGS = 10V

V

140

120

100

- Nanoseconds

80

r

t

60

40

20

4 6 8 101214161820

= 43V

DS

I D = 50A

t

d(on)

- - - -

I D = 25A

RG - Ohms

Fig. 14. Resistive Turn-on

Rise Time vs. Drain Current

100

Ω

90

80

R

= 5

Ω

G

V

= 10V

GS

V

= 43V

DS

25 30 35 40 45 50

- Nanosecond

r

t

70

60

50

40

30

TJ = 25ºC

TJ = 125ºC

ID - Amperes

Fig. 16. Resistive Turn-off

Switching Times vs. Junction Temperature

65

60

55

50

45

40

35

30

25

t

d ( o n )

- Nanoseconds

70

68

66

64

62

t

f

= 43V

DS

t

d(off)

- - - -

RG = 5Ω, VGS = 10V

60

V

- Nanoseconds

f

t

58

56

54

52

25 35 45 55 65 75 85 95 105 115 125

I D = 25A

I D = 50A

TJ - Degrees Centigrade

97

94

t

91

d ( o f f )

88

- Nanoseconds

85

82

79

76

73

70

Fig. 17. Resistive Turn-off

Switching Times vs. Drain Current

72

70

68

66

64

t

t

f

62

RG = 5Ω, VGS = 10V

- Nanosecond

f

t

60

58

56

54

52

50

= 43V

V

DS

24 26 28 30 32 34 36 38 40 42 44 46 48 50

d(off)

- - - -

TJ = 25ºC

TJ = 125ºC

TJ =125ºC

TJ = 25ºC

105

100

95

90

85

80

75

70

65

60

55

50

d ( o f f )

t

- Nanoseconds

ID - Amperes

© 2006 IXYS CORPORATION All rights reserved

200

180

160

140

120

- Nanoseconds

100

f

t

80

60

40

4 6 8 101214161820

Fig. 18. Resistive Turn-off

Switching Times vs. Gate Resistance

t

f

TJ = 125ºC, VGS = 10V

V

= 43V

DS

t

d(off)

I D = 50A

- - - -

I D = 25A

RG - Ohms

IXYS REF: T_200N085T (61) 11-20-06-A.xls

320

290

260

230

200

170

140

110

80

d ( o f f )

t

- Nanoseconds