Datasheet ixta200n075t7 Datasheet

Preliminary Technical Information

TrenchMV

TM

Power MOSFET

IXTA200N075T7

V
I

D25

R

N-Channel Enhancement Mode
Avalanche Rated

Symbol Test Conditions Maximum Ratings

V

DSS

V

DGR

V

GSM

I

D25

I

LRMS

I

DM

I

AR

E

AS

dv/dt I

TJ= 25° C to 175° C75V
TJ= 25° C to 175° C; RGS = 1 MΩ 75 V

Transient ± 20 V

TC= 25° C 200 A
Package Current Limit, RMS 120 A
TC= 25° C, pulse width limited by T

JM

540 A

TC= 25° C25A
TC= 25° C 500 mJ

≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V

S

DSS

3 V/ns

TJ≤ 175° C, RG = 5 Ω

P

T
T
T

T
T

D

J

JM

stg

L

SOLD

TC= 25° C 430 W

-55 ... +175 °C
175 °C

-55 ... +175 °C

1.6 mm (0.062 in.) from case for 10 s 300 °C
Plastic body for 10 seconds 260 °C

Weight 3g

TO-263 (7-lead) (IXTA..7)

Pin-out:1 - Gate

Features



Ultra-low On Resistance



Unclamped Inductive Switching (UIS)
rated



Low package inductance

- easy to drive and to protect



175 ° C Operating Temperature

Advantages



Easy to mount



Space savings



High power density

DSS

DS(on)

1

7

2, 3 - Source
4 - NC (cut)
5,6,7 - Source
TAB (8) - Drain

=75 V
= 200 A

(TAB)

ΩΩ

Ω

ΩΩ

≤≤

≤ 5.0 m

≤≤

Symbol Test Conditions Characteristic Values
(TJ = 25° C unless otherwise specified) Min. Typ. Max.

BV

V

I

GSS

I

DSS

DSS

GS(th)

VGS= 0 V, ID = 250 µA75V

VDS= VGS, ID = 250 µA 2.0 4.0 V

VGS= ± 20 V, VDS = 0 V ± 200 nA

VDS= V

DSS

5 µA

VGS= 0 V TJ = 150° C 250 µA

R

DS(on)

© 2006 IXYS CORPORATION All rights reserved

VGS= 10 V, ID = 25 A, Note 1 4.0 5.0 m Ω

Applications



Automotive

- Motor Drives

- 42V Power Bus

- ABS Systems



DC/DC Converters and Off-line UPS



Primary Switch for 24V and 48V

Systems



High Current Switching

Applications

DS99691 (11/06)

IXTA200N075T7

Symbol Test Conditions Characteristic Values

(TJ = 25° C unless otherwise specified) Min. Typ. Max.

g

C

C

C

t

t

t

t

Q

Q

Q

R

fs

iss

oss

rss

d(on)

r

d(off)

f

g(on)

gs

gd

thJC

VDS= 10 V; ID = 60 A, Note 1 70 115 S

6800 pF

VGS = 0 V, VDS = 25 V, f = 1 MHz 1040 pF

190 pF

Resistive Switching Times 31 ns

VGS = 10 V, VDS = 0.5 V

, ID = 25 A 57 ns

DSS

RG = 5 Ω (External) 54 ns

52 ns

160 nC

VGS= 10 V, VDS = 0.5 V

, ID = 25 A 35 nC

DSS

43 nC

0.35°C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values
TJ = 25° C unless otherwise specified) Min. Typ. Max.

I

S

I

SM

V

SD

t

rr

VGS = 0 V 200 A

Pulse width limited by T

JM

540 A

IF = 25 A, VGS = 0 V, Note 1 1.0 V

IF = 25 A, -di/dt = 100 A/µs80ns

VR = 25 V, VGS = 0 V

TO-263 (7-lead) (IXTA 7) Outline

Pins: 1 - Gate

2, 3 - Source
4 - Drain
5,6,7 - Source
Tab (8) - Drain

Notes: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %.

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre­production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2 7,071,537

IXTA200N075T7

Fig. 1. Output Characteristics

@ 25ºC

200

180

160

140

120

100

- Amperes

D

80

I

60

40

20

0

0 0.1 0.2 0.3 0.4 0.5 0 .6 0.7 0.8 0.9 1

V

= 10V

GS

9V
8V
7V

VDS - Volts

6V

5V

Fig. 3. Output Characteristics

@ 150ºC

200

180

160

140

120

100

- Amperes

D

80

I

60

40

20

0

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2

V

GS

9V
8V
7V

VDS - Volts

= 10V

6V

5V

Fig. 2. Extended Output Characteristics

@ 25ºC

350

V

= 10V

GS

9V

300

8V

250

200

- Amperes

150

D

I

100

50

0

0123456

7V

6V

5V

VDS - Volts

Fig. 4. R

Normalized to ID = 100A Value

DS(on)

vs. Junction Temperature

2.6

V

= 10V

GS

I D = 200A

I D = 100A

-50 -25 0 25 50 75 100 125 150 175

TJ - Degrees Centigrade

- Normalized

DS(on)

R

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

Fig. 5. R

Normalized to ID = 100A Value

DS(on)

vs. Drain Current

2.6

2.4

2.2

2

V

= 10V

GS

1.8

- Normalized

1.6

DS(on)

1.4

R

1.2

1

0.8

© 2006 IXYS CORPORATION All rights reserved

15 V

0 50 100 150 200 250 300 350

- - - -

ID - Amperes

TJ = 175ºC

TJ = 25ºC

Fig. 6. Drain Current vs. Case Temperature

140

External Lead Current Limit for TO-263 (7-Lead)

120

100

80

External Lead Current Limit for TO-3P, TO-220, & TO-263

- Amperes

60

D

I

40

20

0

-50 -25 0 25 50 75 100 125 150 175

TC - Degrees Centigrade

IXTA200N075T7

s

Fig. 7. Input Admittance

300

270

240

210

180

150

- Amperes

D

120

I

90

60

30

0

3 3.5 4 4.5 5 5 .5 6 6.5 7

VGS - Volts

T

= - 40ºC

J

25ºC
150ºC

Fig. 9. Forward Voltage Drop of

Intrins ic Diode

350

300

250

200

T

= 150ºC

J

150

- Amperes

S

I

100

50

0

0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4

TJ = 25ºC

VSD - Volts

Fig. 8. Transconductance

160

140

120

100

80

- Siemens

f s

60

g

40

20

0

0 50 100 150 200 250 300 350

T

J

= - 40ºC

25ºC

150ºC

ID - Amp ere s

Fig. 10. Gate Charge

10

V

= 38V

DS

9

8

7

6

5

- Volts

GS

V

4

3

2

1

0

= 25A

I

D

= 10mA

I

G

0 20 40 60 80 100 120 140 160

QG - NanoCoulombs

Fig. 12. Maximum Transient Thermal

Impedance

10,000

1,000

Fig. 11. Capacitance

C

iss

C

oss

- ºC / W

Z

1.00

0.10

(th)JC

Capacitance - PicoFarad

f = 1 MHz

100

0 5 10 15 20 25 30 35 40

C

VDS - Volts

rss

0.01

0.0001 0.001 0.01 0.1 1 10

Puls e Width - Se cond s

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA200N075T7

Fig. 13. Resistive Turn-on

Rise Time vs. Junction Temperature

65

R

= 5

G

60

55

50

45

40

- Nanoseconds

r

t

35

30

I D = 25A

25

20

25 35 45 55 65 75 85 95 105 115 125

I D = 50A

V

V

= 10V

GS

= 38V

DS

TJ - Degrees Centigrade

Fig. 15. Resistive Turn-on

Switching Times vs. Gate Resistance

130

t

r

TJ = 125ºC, VGS = 10V

V

4 6 8 10121416 1820

- Nanoseconds

r

t

120

110

100

90

80

70

60

50

40

30

20

= 38V

DS

I D = 50A

t

- - - -

d(on)

RG - Ohms

I D = 25A

Fig. 14. Resistive Turn-on

Rise Time vs. Drain Current

70

Ω

65

60

55

R

= 5

Ω

G

50

45

40

- Nanoseconds

r

t

35

30

25

20

V

= 10V

GS

V

= 38V

DS

25 30 35 40 45 50

TJ = 25ºC

TJ = 125ºC

ID - Amperes

Fig. 16. Resistive Turn-off

Switching Times vs. Junction Temperature

60

57

54

t

d ( o n )

51

48

- Nanoseconds

45

42

39

36

33

30

27

58

57

56

55

54

53

52

- Nanoseconds

f

t

51

50

49

48

25 35 45 55 65 75 85 95 105 115 125

I D = 25A

I D = 50A

t

f

= 38V

DS

t

d(off)

RG = 5Ω, VGS = 10V

V

- - - -

TJ - Degrees Centigrade

95

90

85

t

d ( o f f )

80

- Nanoseconds

75

70

65

60

55

50

45

Fig. 17. Resistive Turn-off

Switching Times vs. Drain Current

58

57

56

t

f

55

RG = 5Ω, VGS = 10V

54

V

53

52

- Nanoseconds

f

t

51

50

49

48

25 30 35 40 45 50

= 38V

DS

t

d(off)

- - - -

ID - Amperes

© 2006 IXYS CORPORATION All rights reserved

TJ = 125ºC

TJ = 25ºC

Fig. 18. Resistive Turn-off

Switching Times vs. Gate Resistance

95

90

85

t

d ( o f f )

80

75

- Nanoseconds

70

65

60

55

50

45

170

t

f

TJ = 125ºC, VGS = 10V

150

V

130

110

- Nanoseconds

f

t

90

70

50

4 6 8 10121416 1820

= 38V

DS

t

d(off)

- - - -

I D = 25A

I D = 50A

RG - Ohms

IXYS REF: T_200N075T (5V) 6-20-06.xls

300

260

220

180

140

100

60

t

d ( o f f )

- Nanoseconds