Datasheet ixta182n055t7 Datasheet

Preliminary Technical Information

TrenchMV

TM

Power MOSFET

IXTA182N055T7

V I

D25

R

N-Channel Enhancement Mode Avalanche Rated

Symbol Test Conditions Maximum Ratings

V

DSS

V

DGR

V

GSM

I

D25

I

LRMS

I

DM

I

AR

E

AS

dv/dt I

TJ= 25° C to 175° C55V TJ= 25° C to 175° C; RGS = 1 MΩ 55 V

Transient ± 20 V

TC= 25° C 182 A Package Current Limit, RMS 160 A TC= 25° C, pulse width limited by T

JM

490 A

TC= 25° C25A TC= 25° C 1.0 J

≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V

S

DSS

3 V/ns

TJ≤ 175° C, RG = 5 Ω

P

T T T

T T

D

J

JM

stg

L

SOLD

TC= 25° C 360 W

-55 ... +175 °C 175 °C

-55 ... +175 °C

1.6 mm (0.062 in.) from case for 10 s 300 °C Plastic body for 10 seconds 260 °C

Weight 3g

TO-263 (7-lead) (IXTA..7)

Pin-out:1 - Gate

Features



Ultra-low On Resistance



Unclamped Inductive Switching (UIS) rated



Low package inductance

- easy to drive and to protect



175 ° C Operating Temperature

DSS

DS(on)

1

7

2, 3 - Source 4 - NC (cut) 5,6,7 - Source TAB (8) - Drain

=55 V = 182 A

(TAB)

ΩΩ

Ω

ΩΩ

≤≤

≤ 5.0 m

≤≤

Symbol Test Conditions Characteristic Values (TJ = 25° C unless otherwise specified) Min. Typ. Max.

BV

V

I

GSS

I

DSS

GS(th)

VGS= 0 V, ID = 250 µA55V

VDS= VGS, ID = 250 µA 2.0 4.0 V

VGS= ± 20 V, VDS = 0 V ± 100 nA

VDS= V

DSS

5 µA

VGS= 0 V TJ = 150° C 250 µA

R

DS(on)

VGS= 10 V, ID = 25 A, Note 1 3.5 5.0 m Ω

Advantages



Easy to mount



Space savings



High power density

Applications



Automotive

- Motor Drives

- High Side Switch

- 12V Battery

- ABS Systems



DC/DC Converters and Off-line UPS



Primary- Side Switch



High Current Switching

Applications

DS99681 (11/06)

IXTA182N055T7

Symbol Test Conditions Characteristic Values

(TJ = 25° C unless otherwise specified) Min. Typ. Max.

g

C

t

Q

R

fs

iss

oss

rss

d(on)

r

d(off)

f

g(on)

gs

gd

thJC

VDS= 10 V; ID = 60 A, Note 1 65 100 S

4850 pF

VGS = 0 V, VDS = 25 V, f = 1 MHz 954 pF

212 pF

Resistive Switching Times 36 ns

VGS = 10 V, VDS = 30 V, ID = 25 A 35 ns

RG = 5 Ω (External) 53 ns

38 ns

114 nC

VGS= 10 V, VDS = 0.5 V

, ID = 25 A 30 nC

DSS

32 nC

0.42°C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values TJ = 25° C unless otherwise specified) Min. Typ. Max.

I

S

I

SM

V

SD

t

rr

VGS = 0 V 182 A

Pulse width limited by T

JM

490 A

IF = 25 A, VGS = 0 V, Note 1 1.0 V

IF = 25 A, -di/dt = 100 A/µs70ns

VR = 25 V, VGS = 0 V

TO-263 (7-lead) (IXTA...7) Outline

Pins: 1 - Gate

2, 3 - Source 4 - Drain 5,6,7 - Source Tab (8) - Drain

Notes: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %.

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a preproduction design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice.

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2 7,071,537

IXTA182N055T7

Fig. 1. Output Characteristics

@ 25ºC

200

180

160

140

120

100

- Amperes

D

80

I

60

40

20

0

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9

V

GS

9V 8V

VDS - Volts

= 10V

7V

6V

5V

Fig. 3. Output Characteristics

@ 150ºC

200

180

160

140

120

100

- Amperes

D

80

I

60

40

20

0

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8

V

= 10V

GS

9V 8V

VDS - Volts

7V

6V

5V

Fig. 2. Extended Output Characteristics

@ 25ºC

320

V

= 10V

GS

9V

280

240

200

160

- Amperes

D

I

120

80

40

0

0123456

8V

7V

6V

5V

VDS - Volts

Fig. 4. R

Normalized to ID = 91A Value

DS(on)

vs. Junction Temperature

2.2

V

= 10V

GS

I D = 182A

I D = 91A

-50 -25 0 25 50 75 100 125 150 175

TJ - Degrees Centigrade

- Normalized

DS(on)

R

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

Fig. 5. R

Normalized to ID = 91A Value

DS(on)

vs. Drain Current

2.4

V

= 10V

GS

2.2

2

1.8

1.6

- Normalized

1.4

DS(on)

1.2

R

1

0.8

0.6

15V

0 40 80 120 160 200 240 280 320

- - - -

ID - Amperes

TJ = 175ºC

TJ = 25ºC

Fig. 6. Drain Current vs. Case Temperature

140

External Lead Current Limit for TO-263 (7-Lead)

120

100

80

External Lead Current Limit for TO-3P, TO-220, & TO-263

- Amperes

60

D

I

40

20

0

-50 -25 0 25 50 75 100 125 150 175

TC - Degrees Centigrade

IXTA182N055T7

s

Fig. 7. Input Admittance

270

240

210

180

150

120

- Amperes

D

I

90

60

30

0

3.5 4 4.5 5 5.5 6 6.5 7 7.5

T

= -40ºC

J

25ºC 125ºC

VGS - Volts

Fig. 9. Forward Voltage Drop of

Intrinsic Diode

300

270

240

210

180

150

- Amperes

S

120

I

90

60

30

0

0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3

T

= 150ºC

J

VSD - Volts

TJ = 25ºC

Fig. 8. Transconductance

140

T

= - 40ºC

J

120

100

80

- Siemens

60

f s

g

40

20

0

0 30 60 90 120 150 180 210 240 270

25ºC

150ºC

ID - Amperes

Fig. 10. Gate Charge

10

9

V

= 27.5V

DS

= 25A

I

D

8

I

= 10mA

G

7

6

- Volts

5

GS

V

4

3

2

1

0

0 102030405060 708090100110120

QG - NanoC oulom bs

Fig. 11. Capacitance

10,000

1,000

f = 1 MHz

C

iss

C

oss

Capacitance - PicoFarad

C

rss

100

0 5 10 15 20 25 30 35 40

VDS - Volts

1,000

- Amperes

D

I

Fig. 12. Forward-Bias Safe Operating Area

R

Limit @ VGS = 10V

DS(on)

100

TJ = 175ºC

= 25ºC

T

C

10

1 10 100

DC

VDS - Volts

25µs

100µs

1ms

10ms

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA182N055T7

s

Fig. 13. Resistive Turn-on

Rise Time vs. Junction Temperature

36

R

= 5

G

34

32

30

28

- Nanoseconds

r

t

26

24

22

25 35 45 55 65 75 85 95 105 115 125

I D = 25A

V

I D = 50A

= 10V

GS

= 30V

DS

TJ - Degrees Centigrade

Fig. 15. Resistive Turn-on

Switching Times vs. Gate Resistance

160

140

120

100

80

- Nanoseconds

r

t

60

t

r

TJ = 125ºC, VGS = 10V

V

= 30V

DS

t

d(on)

- - - -

I D = 50A

I D = 25A

Ω

58

54

50

46

42

38

t

d ( o n )

- Nanoseconds

Fig. 14. Resistive Turn-on

Rise Time vs. Drain Current

38

36

34

R

= 5

Ω

G

32

30

- Nanosecond

28

r

t

26

24

22

V

= 10V

GS

V

= 30V

DS

25 30 35 40 45 50

TJ = 25ºC

TJ = 125ºC

ID - Amperes

Fig. 16. Resistive Turn-off

Switching Times vs. Junction Temperature

50

t

f

= 30V

DS

t

d(off)

- - - -

I D = 25A

I D = 50A

48

RG = 5Ω, VGS = 10V

V

46

44

42

40

- Nanosecond

f

t

38

74

71

d ( o f f )

68

65

62

59

56

t

- Nanosecond

40

20

4 6 8 101214161820

RG - Ohms

Fig. 17. Resistive Turn-off

Switching Times vs. Drain Current

48

46

44

42

40

- Nanoseconds

f

t

38

36

34

24 28 32 36 40 44 48

TJ = 125ºC

TJ = 25ºC

ID - Amperes

t

RG = 5Ω, VGS = 10V

V

f

= 30V

DS

t

d(off)

- - - -

34

30

36

34

25 35 45 55 65 75 85 95 105 115 125

53

50

TJ - Degrees Centigrade

Fig. 18. Resistive Turn-off

Switching Times vs. Gate Resistance

74

70

66

62

58

54

50

46

t

d ( o f f )

- Nanoseconds

180

t

f

TJ = 125ºC, VGS = 10V

160

V

140

120

100

- Nanoseconds

f

t

80

60

40

4 6 8 101214161820

= 30V

DS

t

d(off)

- - - -

I D = 25A

I D = 50A

RG - Ohms

200

175

t

d ( o f f )

150

- Nanoseconds

125

100

75

50

25

IXTA182N055T7

Fig. 19. Maximum Transient Thermal Impedance

1.00

0.10

- ºC / W

(th)JC

Z

0.01

0.0001 0.001 0.01 0.1 1

Pulse Width - Second

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS REF: T_182N055T (4V) 6-01-06-A.xls