Datasheet ixta180n10t7 Datasheet

PreliminaryTechnical Information

TrenchMV

TM

Power MOSFET

IXTA180N10T7

V I

D25

R

N-Channel Enhancement Mode Avalanche Rated

Symbol Test Conditions Maximum Ratings

V

DSS

V

DGR

V

GSM

I

D25

I

LRMS

I

DM

I

AR

E

AS

dv/dt I

TJ= 25° C to 175° C 100 V TJ= 25° C to 175° C; RGS = 1 MΩ 100 V

Transient ± 30 V

TC= 25° C 180 A Package Current Limit, RMS 120 A TC= 25° C, pulse width limited by T

JM

450 A

TC= 25° C25A TC= 25° C 750 mJ

≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V

S

DSS

3 V/ns

TJ≤ 175° C, RG =3.3 Ω

P

T T T

T T

D

J

JM

stg

L

SOLD

TC= 25° C 480 W

-55 ... +175 °C 175 °C

-55 ... +175 °C

1.6 mm (0.062 in.) from case for 10 s 300 °C Plastic body for 10 seconds 260 °C

Weight 3g

TO-263 (7-lead) (IXTA..7)

Pin-out:1 - Gate

Features



Ultra-low On Resistance



Unclamped Inductive Switching (UIS) rated



Low package inductance

- easy to drive and to protect



175 ° C Operating Temperature

Advantages



Easy to mount



Space savings



High power density

DSS

DS(on)

1

7

2, 3 - Source 4 - NC (cut) 5,6,7 - Source TAB (8) - Drain

= 100 V = 180 A

(TAB)

ΩΩ

Ω

ΩΩ

≤≤

≤ 6.4 m

≤≤

Symbol Test Conditions Characteristic Values (TJ = 25° C unless otherwise specified) Min. Typ. Max.

BV

V

I

GSS

I

DSS

GS(th)

VGS= 0 V, ID = 250 µA 100 V

VDS= VGS, ID = 250 µA 2.5 4.5 V

VGS= ± 20 V, VDS = 0 V ± 200 nA

VDS= V

DSS

5 µA

VGS= 0 V TJ = 150° C 250 µA

R

DS(on)

VGS= 10 V, ID = 25 A, Note 1 5.4 6.4 m Ω

Applications



Automotive

- Motor Drives

- 42V Power Bus

- ABS Systems



DC/DC Converters and Off-line UPS



Primary Switch for 24V and 48V

Systems



Distributed Power Architechtures

and VRMs



Electronic Valve Train Systems



High Current Switching

Applications



High Voltage Synchronous Recifier

DS99711 (11/06)

IXTA180N10T7

Symbol Test Conditions Characteristic Values

(TJ = 25° C unless otherwise specified) Min. Typ. Max.

g

C

t

Q

R

fs

iss

oss

rss

d(on)

r

d(off)

f

g(on)

gs

gd

thJC

VDS= 10 V; ID = 60 A, Note 1 70 110 S

6900 pF

VGS = 0 V, VDS = 25 V, f = 1 MHz 923 pF

162 pF

Resistive Switching Times 33 ns

VGS = 10 V, VDS = 0.5 V

, ID = 25 A 54 ns

DSS

RG = 3.3 Ω (External) 42 ns

31 ns

151 nC

VGS= 10 V, VDS = 0.5 V

, ID = 25 A 39 nC

DSS

45 nC

0.31°C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values TJ = 25° C unless otherwise specified) Min. Typ. Max.

I

S

I

SM

V

SD

t

rr

VGS = 0 V 180 A

Pulse width limited by T

JM

450 A

IF = 25 A, VGS = 0 V, Note 1 0.95 V

IF = 25 A, -di/dt = 100 A/µs 100 ns

VR = 50 V, VGS = 0 V

TO-263 (7-lead) (IXTA...7) Outline

Pins: 1 - Gate

2, 3 - Source 4 - Drain 5,6,7 - Source Tab (8) - Drain

Notes: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %.

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a preproduction design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice.

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2 7,071,537

IXTA180N10T7

Fig. 1. Output Characteristics

@ 25ºC

180

160

140

120

100

80

- Amperes

D

I

60

40

20

0

0 0.2 0.4 0.6 0.8 1 1.2

V

GS

9V 8V

VDS - Volts

= 10V

7V

6V

Fig. 3. Output Characteristics

@ 150ºC

180

160

140

120

100

80

- Amperes

D

I

60

40

20

0

0 0.4 0.8 1.2 1.6 2 2.4 2.8

V

GS

9V 8V

VDS - Volts

= 10V

7V

6V

5V

Fig. 2. Extended Output Characteristics

@ 25ºC

300

V

= 10V

GS

275

250

225

200

175

150

- Amperes

125

D

I

100

9V 8V

7V

75

50

25

0

01234567

6V

VDS - Volts

Fig. 4. R

Normalized to ID = 90A Value

DS(on)

vs. Junction Temperature

2.8

V

2.6

2.4

2.2

2

1.8

1.6

- Normalized

1.4

DS(on)

1.2

R

1

0.8

0.6

0.4

-50 -25 0 25 50 75 100 125 150 175

GS

= 10V

TJ - Degrees Centigrade

I D = 180A

I D = 90A

Fig. 5. R

Normalize d to ID = 90A Value

DS(on)

vs. Drain Current

3

2.8

2.6

2.4

2.2

2

V

1.8

- Normalized

1.6

DS(on)

1.4

R

1.2

1

0.8

0.6 0 50 100 150 200 250 300

= 10V

GS

15V

- - - -

ID - Amperes

TJ = 175ºC

TJ = 25ºC

Fig. 6. Drain Current vs. Case Temperature

140

External Lead Current Limit for TO-263 (7-Lead)

120

100

External Lead Current Lim it for TO -3P, TO -220, & TO-263

80

- Amperes

60

D

I

40

20

0

-50 -25 0 25 50 75 100 125 150 175

TC - Degrees Centigrade

IXTA180N10T7

s

Fig. 7. Input Admittance

225

200

175

150

125

100

- Amperes

D

I

75

50

25

0

3.5 4 4.5 5 5.5 6 6.5 7 7.5

T

= 150ºC

J

25ºC

- 40ºC

VGS - Volts

Fig. 9. Forward Voltage Drop of

Intrins ic Diode

275

250

225

200

175

150

125

- Amperes

S

I

100

75

50

25

0

0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2

T

J

= 150ºC

TJ = 25ºC

VSD - Volts

Fig. 8. Transconductance

150

T

135

120

105

90

75

- Siemens

f s

60

g

45

30

15

0

0 25 50 75 100 125 150 175 200 225 250

= - 40ºC

J

25ºC

150ºC

ID - Amperes

Fig. 10. Gate Charge

10

V

= 50V

DS

= 25A

I

D

= 10mA

I

G

0 20 40 60 80 100 120 140 160

QG - NanoCoulombs

- Volts

GS

V

9

8

7

6

5

4

3

2

1

0

Fig. 12. Maximum Transient Thermal

Impedance

10,000

1,000

f = 1 MHz

Fig. 11. Capacitance

C

iss

oss

- ºC / W

Z

1.00

0.10

(th)JC

Capacitance - PicoFarad

C

rss

100

0 5 10 15 20 25 30 35 40

VDS - Volts

0.01

0.0001 0.001 0.01 0.1 1 10

Pulse Width - Second

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA180N10T7

s

Fig. 13. Resistive Turn-on

Rise Time vs. Junction Temperature

70

65

60

55

50

45

40

35

- Nanosecond

r

t

30

25

20

15

10

I D = 25A

25 35 45 55 65 75 85 95 105 115 125

I D = 50A

R

V

= 3.3

G

= 10V

GS

= 50V

DS

TJ - Degrees Centigrade

Fig. 15. Resistive Turn-on

Switching Times vs. Gate Resistance

180

t

r

160

TJ = 125ºC, VGS = 10V

V

140

120

100

80

- Nanosecond

r

t

60

40

20

0

4 6 8 101214161820

= 50V

DS

t

d(on)

- - - -

RG - Ohms

I D = 50A

I D = 25A

Fig. 14. Resistive Turn-on

Rise Time vs. Drain Current

70

Ω

65

60

55

50

R

45

40

35

- Nanosecond

r

t

30

25

20

15

10

= 3.3

Ω

G

V

= 10V

GS

= 50V

V

DS

24 26 28 30 32 34 36 38 40 42 44 46 48 50

TJ = 25ºC

TJ = 125ºC

ID - Amperes

Fig. 16. Resistive Turn-off

Switching Times vs. Junction Temperature

75

70

65

t

d ( o n )

60

- Nanosecond

55

50

45

40

35

30

38

t

f

= 50V

DS

t

- - - -

d(off)

I D = 25A, 50A

25A < I D < 50A

37

RG = 3.3Ω, VGS = 10V

V

36

35

34

33

- Nanosecond

f

t

32

31

30

25 35 45 55 65 75 85 95 105 115 125

TJ - Degrees Centigrade

64

61

t

d ( o f f )

58

55

- Nanosecond

52

49

46

43

40

Fig. 17. Resistive Turn-off

Switching Times vs. Drain Current

38

37

36

t

f

35

RG = 3.3Ω, VGS = 10V

34

V

33

- Nanoseconds

f

t

32

31

30

25 30 35 40 45 50

= 50V

DS

t

d(off)

- - - -

TJ = 125ºC

TJ = 25ºC

64

61

t

d ( o f f )

58

55

- Nanoseconds

52

49

46

43

40

ID - Amperes

160

140

120

100

80

- Nanoseconds

f

t

60

40

20

2 4 6 8 10 12 14 16 18 20

Fig. 18. Resistive Turn-off

Switching Times vs. Gate Resistance

t

f

TJ = 125ºC, VGS = 10V

V

= 50V

DS

25A < I D < 50A

t

d(off)

- - - -

RG - Ohms

I D = 25A, 50A

IXYS REF: T_180N10T (61) 11-20-06-A.xls

250

220

190

160

130

100

70

40

t

d ( o f f )

- Nanoseconds