Datasheet ixta160n10t7 Datasheet

Preliminary Technical Information

TrenchMV

TM

IXTA160N10T7

Power MOSFET

N-Channel Enhancement Mode Avalanche Rated

Symbol Test Conditions Maximum Ratings

V

DSS

V

DGR

V

GSM

I

D25

I

LRMS

I

DM

I

AR

E

AS

dv/dt I

TJ= 25°C to 175°C 100 V TJ= 25°C to 175°C; RGS = 1 MΩ 100 V

Transient ± 30 V

TC= 25°C 160 A Lead Current Limit, RMS 120 A TC= 25°C, pulse width limited by T

JM

430 A

TC= 25°C25A TC= 25°C 500 mJ

≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ V

S

DSS

3 V/ns

TJ≤ 175°C, RG = 5 Ω

V I

D25

R

DSS

DS(on)

= 100 V = 160 A

≤≤

≤ 7.0 m

≤≤

TO-263 (7-lead) (IXTA..7)

1

7

Pin-out:1 - Gate

2, 3 - Source 4 - NC (cut) 5,6,7 - Source TAB (8) - Drain

(TAB)

ΩΩ

Ω

ΩΩ

P

T T T

T T

D

J

JM

stg

L

SOLD

TC= 25°C 430 W

-55 ... +175 °C 175 °C

-55 ... +175 °C

1.6 mm (0.062 in.) from case for 10 s 300 °C Plastic body for 10 seconds 260 °C

Features



Ultra-low On Resistance



Unclamped Inductive Switching (UIS) rated



Low package inductance

- easy to drive and to protect



175 °C Operating Temperature

Weight 3g

Advantages



Easy to mount



Space savings



High power density

Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max.

BV

V

I

GSS

I

DSS

GS(th)

VGS= 0 V, ID = 250 μA 100 V

VDS= VGS, ID = 1 mA 2.5 4.5 V

VGS= ± 20 V, VDS = 0 V ± 200 nA

VDS= V

DSS

5 μA

VGS= 0 V TJ = 150°C 250 μA

R

DS(on)

VGS= 10 V, ID = 25 A, Notes 1 5.8 7.0 mΩ

Applications



Automotive

- Motor Drives

- 42V Power Bus

- ABS Systems



DC/DC Converters and Off-line UPS



Primary Switch for 24V and 48V

Systems



Distributed Power Architechtures



Electronic Valve Train Systems



High Current Switching

Applications



High Voltage Synchronous Recifier

and VRMs

DS99709 (11/06)

IXTA160N10T7

Symbol Test Conditions Characteristic Values

(TJ = 25°C unless otherwise specified) Min. Typ. Max.

g

C

t

Q

R

fs

iss

oss

rss

d(on)

r

d(off)

f

g(on)

gs

gd

thJC

VDS= 10 V; ID = 60 A, Note 1 65 102 S

6600 pF

VGS = 0 V, VDS = 25 V, f = 1 MHz 880 pF

135 pF

Resistive Switching Times 33 ns

VGS = 10 V, VDS = 0.5 V

, ID = 25 A 61 ns

DSS

RG = 5 Ω (External) 49 ns

42 ns

132 nC

VGS= 10 V, VDS = 0.5 V

, ID = 25 A 37 nC

DSS

40 nC

0.35°C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values TJ = 25°C unless otherwise specified) Min. Typ. Max.

I

S

I

SM

V

SD

t

rr

VGS = 0 V 160 A

Pulse width limited by T

JM

430 A

IF = 25 A, VGS = 0 V, Note 1 1.0 V

IF = 25 A, -di/dt = 100 A/μs 100 ns

VR = 50 V, VGS = 0 V

TO-263 (7-lead) (IXTA...7) Outline

Pins: 1 - Gate

2, 3 - Source 4 - Drain 5,6,7 - Source Tab (8) - Drain

Notes: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %.

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a preproduction design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice.

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2 7,071,537

IXTA160N10T7

Fig. 1. Output Characteristics

@ 25ºC

160

140

120

100

80

- Amperes

D

I

60

40

20

0

0 0.2 0.4 0.6 0.8 1 1.2

V

GS

9V 8V

VDS - Vo lts

= 10V

7V

6V

5V

Fig. 3. Output Characteristics

@ 150ºC

160

140

120

100

80

- Amperes

D

I

60

40

20

0

0 0.4 0.8 1.2 1.6 2 2.4 2.8

V

GS

8V

VDS - Volts

= 10V

7V

6V

5V

Fig. 2. Extended Output Characteristics

@ 25ºC

300

V

= 10V

GS

9V 8V

7V

6V

0

012345678

- Amperes

D

I

275

250

225

200

175

150

125

100

75

50

25

VDS - Volts

Fig. 4. R

Normalized to ID = 160A Value

DS(on)

vs. Junction Temperature

2.8

V

= 10V

GS

2.6

2.4

2.2

2

1.8

- Normalized

1.6

1.4

DS(on)

R

1.2

1

0.8

0.6

-50 -25 0 25 50 75 100 125 150 175

I D = 160A

I D = 80A

TJ - Degrees Centigrade

Fig. 5. R

Normalize d to ID = 80A Value

DS(on)

vs. Drain Current

3.2

V

3

2.8

2.6

2.4

2.2

2

1.8

- Normalized

1.6

DS(on)

1.4

R

1.2

1

0.8

0.6

= 10 V

GS

15V - - - -

0 50 100 150 200 250 300

ID - Amperes

TJ = 175ºC

TJ = 25ºC

Fig. 6. Drain Current vs. Case Temperature

140

External Lead Current Limit for TO-263 (7-Lead)

120

100

80

External Lead Curren t Limit for TO-3P , TO-220, & TO -263

60

- Amperes

D

I

40

20

0

-50 -25 0 25 50 75 100 125 150 175

TC - Degrees Centigrade

IXTA160N10T7

Fig. 7. Input Admittance

200

180

160

140

120

100

- Amperes

80

D

I

60

40

20

0

3.5 4 4.5 5 5.5 6 6.5 7

T

= 150ºC

J

25ºC

- 40ºC

VGS - Volts

Fig. 9. Forward Voltage Drop of

Intrin sic D iode

300

250

200

150

- Amperes

S

I

100

50

0

0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4

T

J

= 150ºC

TJ = 25ºC

VSD - Vo lts

Fig. 8. Transconductance

140

T

= - 40ºC

120

100

80

- Siemens

60

f s

g

40

20

0

0 20 40 60 80 100 120 140 160 180 200 220

J

25ºC

150ºC

ID - Am peres

Fig. 10. Gate Charge

10

V

= 50V

DS

9

8

7

6

- Volts

5

GS

V

4

3

2

1

0

= 25A

I

D

I

= 10mA

G

0 20 40 60 80 100 120 140

QG - NanoCoulombs

Fig. 11. Capacitance

10,000

C

f = 1 MHz

1,000

Capacitance - PicoFarads

100

0 5 10 15 20 25 30 35 40

VDS - Volts

IXYS reserves the right to change limits, test conditions, and dimensions.

iss

C

oss

C

rss

Fig. 12. Maximum Transient Thermal

Impedance

1.00

0.10

- ºC / W

(th)JC

Z

0.01

0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

IXTA160N10T7

Fig. 13. Resistive Turn-on

Rise Time vs. Junction Temperature

90

R

= 5

G

80

70

60

50

- Nanoseconds

r

t

40

30

20

I D = 25A

25 35 45 55 65 75 85 95 105 115 125

I D = 50A

V

= 10V

GS

= 50V

DS

TJ - Degrees Centigrade

Fig. 15. Resistive Turn-on

Switching Times vs. Gate Resistance

170

t

r

TJ = 125ºC, VGS = 10V

V

90

70

50

30

4 6 8 10 12 14 16 18 20

- Nanoseconds

r

t

150

130

110

= 50V

DS

t

d(on)

- - - -

RG - Ohm s

I D = 50A

I D = 25A

Fig. 14. Resistive Turn-on

Rise Time vs. Drain Current

70

Ω

65

60

R

= 5

Ω

G

55

50

45

- Nanoseconds

r

t

40

35

30

V

= 10V

GS

V

= 50V

DS

25 30 35 40 45 50

TJ = 25ºC

TJ = 125ºC

ID - Am peres

Fig. 16. Resistive Turn-off

Switching Times vs. Junction Temperature

65

60

55

50

45

40

35

30

t

d ( o n )

- Nanoseconds

90

t

85

80

75

I D = 25A

70

65

I D = 50A

60

55

- Nanoseconds

f

50

t

I D = 25A

45

40

35

I D = 50A

30

25 35 45 55 65 75 85 95 105 115 125

RG = 5Ω, VGS = 10V

V

f

= 50V

DS

t

d(off)

- - - -

TJ - Degrees Centigrade

120

115

110

105

100

95

90

85

80

75

70

65

60

t

d ( o f f )

- Nanoseconds

Fig. 17. Resistive Turn-off

Switching Times vs. Drain Current

44

43

42

41

- Nanoseconds

f

t

40

39

38

25 30 35 40 45 50

TJ = 125ºC

TJ = 25ºC

ID - Am peres

t

f

RG = 5Ω, VGS = 10V

V

= 50V

DS

TJ = 125ºC

TJ = 25ºC

t

d(off)

- - - -

Fig. 18. Resistive Turn-off

Switching Times vs. Gate Resistance

80

77

74

t

71

d ( o f f )

68

65

- Nanoseconds

62

59

56

53

50

47

44

140

t

130

TJ = 125ºC, VGS = 10V

120

V

110

100

90

80

70

- Nanoseconds

f

t

60

50

40

30

4 6 8 101214161820

f

= 50V

DS

t

d(off)

- - - -

I D = 25A

I D = 50A

RG - Ohm s

IXYS REF: T_160N10T (5V) 11-16-06-A.xls

205

190

175

160

145

130

115

100

85

70

55

40

t

d ( o f f )

- Nanoseconds