Datasheet ixta160n075t7 Datasheet

Preliminary Technical Information

TrenchMV

TM

IXTA160N075T7

Power MOSFET

N-Channel Enhancement Mode
Avalanche Rated

Symbol Test Conditions Maximum Ratings

V

DSS

V

DGR

V

GSM

I

D25

I

LRMS

I

DM

I

AR

E

AS

dv/dt I

P

D

T

J

T

JM

T

stg

T

L

T

SOLD

M

d

Weight TO-263 types 3 g

Symbol Test Conditions Characteristic Values
(TJ = 25° C unless otherwise specified) Min. Typ. Max.

BV

DSS

V

GS(th)

I

GSS

I

DSS

R

DS(on)

TJ= 25° C to 175° C75V
TJ= 25° C to 175° C; RGS = 1 MΩ 75 V

Transient ± 20 V

TC= 25° C 160 A
Lead Current Limit, RMS 120 A
TC= 25° C, pulse width limited by T

JM

430 A

TC= 25° C25A
TC= 25° C 750 mJ

≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V

S

DSS

3 V/ns

TJ≤ 175° C, RG = 5 Ω

TC= 25° C 360 W

-55 ... +175 °C
175 °C

-55 ... +175 °C

1.6 mm (0.062 in.) from case for 10 s 300 °C
Plastic body for 10 seconds 260 °C

Mounting torque (TO-3P, TO-220) 1.13 / 10 Nm/lb.in.

VGS= 0 V, ID = 250 µA75V

VDS= VGS, ID = 250 µA 2.0 4.0 V

VGS= ± 20 V, VDS = 0 V ± 200 nA

VDS= V

DSS

25 µA

VGS= 0 V TJ = 150° C 250 µA

VGS= 10 V, ID = 25 A, Note 1 4.8 6.0 m Ω

V
I

D25

R

DSS

DS(on)

=75 V
= 160 A

≤≤

≤ 6.0 m

≤≤

ΩΩ

Ω

ΩΩ

TO-263 (7-lead) (IXTA..7)

1

7

TAB

Pins: 1 - Gate

2, 3 - Source
4 - NC (cut)
5,6,7 - Source
TAB (8) - Drain

Features



Ultra-low On Resistance



Unclamped Inductive Switching (UIS)
rated



Low package inductance

- easy to drive and to protect



175 ° C Operating Temperature

Advantages



Easy to mount



Space savings



High power density

Applications



Automotive

- Motor Drives

- 42V Power Bus

- ABS Systems



DC/DC Converters and Off-line UPS



Primary Switch for 24V and 48V

Systems



High Current Switching

Applications

© 2006 IXYS CORPORATION All rights reserved

DS99689 (11/06)

IXTA160N075T7

Symbol Test Conditions Characteristic Values

(TJ = 25° C unless otherwise specified) Min. Typ. Max.

g

C

C

C

t

t

t

t

Q

Q

Q

R

fs

iss

oss

rss

d(on)

r

d(off)

f

g(on)

gs

gd

thJC

VDS= 10 V; ID = 60 A, Note 1 65 100 S

4950 pF

VGS = 0 V, VDS = 25 V, f = 1 MHz 790 pF

145 pF

Resistive Switching Times 29 ns

VGS = 10 V, VDS = 0.5 V

, ID = 25 A 64 ns

DSS

RG = 5 Ω (External) 60 ns

60 ns

112 nC

VGS= 10 V, VDS = 0.5 V

, ID = 25 A 30 nC

DSS

30 nC

0.42°C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values
TJ = 25° C unless otherwise specified) Min. Typ. Max.

I

S

I

SM

V

SD

t

rr

VGS = 0 V 160 A

Pulse width limited by T

JM

430 A

IF = 25 A, VGS = 0 V, Note 1 1.0 V

IF = 25 A, -di/dt = 100 A/µs80ns

VR = 40 V, VGS = 0 V

TO-263 (7-lead) (IXTA 7) Outline

Pins: 1 - Gate

2, 3 - Source
4 - Drain
5,6,7 - Source
Tab (8) - Drain

Notes: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %.

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre­production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2 7,071,537

IXTA160N075T7

Fig. 1. Output Characteristics

@ 25ºC

160

140

120

100

80

- Amperes

D

I

60

40

20

0

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 .8 0.9 1

V

= 10V

GS

9V
8V
7V

VDS - Volts

6V

5V

Fig. 3. Output Characteristics

@ 150ºC

160

140

120

100

80

- Amperes

D

I

60

40

20

0

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2

V

= 10V

GS

9V
8V
7V

VDS - Volts

6V

5V

Fig. 2. Extended Output Characteristics

@ 25ºC

280

V

= 10V

GS

9V

240

8V

200

160

120

- Amperes

D

I

80

40

0

0123456

7V

6V

5V

VDS - Volts

Fig. 4. R

Normalize d to ID = 80A Value

DS(on)

vs. Junction Temperature

2.6

V

= 10V

GS

2.4

2.2

2.0

1.8

1.6

- Normalized

1.4

DS(on)

R

1.2

1.0

0.8

0.6

I D = 160A

I D = 80A

-50 -25 0 25 50 75 100 125 150 175

TJ - Degrees Centigrade

Fig. 5. R

Normalized to ID = 80A Value

DS(on)

vs. Drain Current

2.8

V

= 10V

GS

2.6

2.4

2.2

2

1.8

- Normalized

1.6

1.4

DS(on)

R

1.2

1

0.8

0.6

© 2006 IXYS CORPORATION All rights reserved

15V

0 50 100 150 200 250 300

- - - -

ID - Amperes

TJ = 175ºC

TJ = 25ºC

Fig. 6. Drain Current vs. Case Temperature

140

External Lead Current Limit for TO-263 (7-Lead)

120

100

80

External Lead Curr ent Limit for TO-3P, TO-220, & TO-263

- Amperes

60

D

I

40

20

0

-50 -25 0 25 50 75 100 125 150 175

TC - Degrees Centigrade

IXTA160N075T7

s

Fig. 7. Input Admittance

270

240

210

180

150

120

- Amperes

D

I

90

60

30

0

3 3.5 4 4.5 5 5.5 6 6.5 7

T

= -40ºC

J

25ºC
150ºC

VGS - Volts

Fig. 9. Forward Voltage Drop of

Intrinsic Diode

270

240

210

180

150

120

- Amperes

S

I

90

60

30

0

0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3

T

= 150ºC

J

VSD - Volts

TJ = 25ºC

Fig. 8. Transconductance

140

T

= - 40ºC

J

120

100

80

- Siemens

60

f s

g

40

20

0

0 50 100 150 200 250 300

25ºC

150ºC

ID - Amperes

Fig. 10. Gate Charge

10

V

= 37V

DS

9

8

7

6

5

- Volts

GS

V

4

3

2

1

0

0 102030405060708090100110120

I

= 25A

D

I

= 10mA

G

QG - NanoCoulombs

Fig. 12. Maximum Transient Thermal

Impedance

10,000

1,000

f = 1 MHz

Fig. 11. Capacitance

C

iss

C

oss

1.00

0.10

- ºC / W

(th)JC

Z

Capacitance - PicoFarad

C

rss

100

0 5 10 15 20 25 30 35 40

VDS - Volts

0.01

0.0001 0.001 0.01 0.1 1 10

Puls e Width - Sec onds

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA160N075T7

Fig. 13. Resistive Turn-on

Rise Time vs. Junction Temperature

75

70

65

60

55

50

45

40

- Nanoseconds

r

t

35

30

25

20

15

25 35 45 55 65 75 85 95 105 115 125

I D = 25A

I D = 50A

R

V

V

= 5

G

= 10V

GS

= 38V

DS

TJ - Degrees Centigrade

Fig. 15. Resistive Turn-on

Switching Times vs. Gate Resistance

100

t

90

80

70

60

50

- Nanoseconds

r

t

40

30

20

10

r

TJ = 125ºC, VGS = 10V

V

4 6 8 101214161820

= 38V

DS

t

- - - -

d(on)

RG - Ohms

I D = 25A

I D = 50A

Ω

42

40

38

t

d ( o n )

36

- Nanoseconds

34

32

30

28

26

24

Fig. 14. Resistive Turn-on

Rise Time v s. Drain Current

80

70

TJ = 25ºC

60

R

= 5

Ω

G

= 10V

V

GS

50

40

- Nanoseconds

r

t

30

20

10

= 38V

V

DS

TJ = 125ºC

25 30 35 40 45 50

ID - Amperes

Fig. 16. Resistive Turn-off

Switching Times vs. Junction Temperature

62

60

58

t

RG = 5Ω, VGS = 10V

56

V

54

52

50

- Nanoseconds

f

t

48

46

44

42

25 35 45 55 65 75 85 95 105 115 125

t

f

= 38V

DS

d(off)

- - - -

TJ - Degrees Centigrade

I D = 25A

I D = 50A

85

82

79

t

d ( o f f )

76

- Nanoseconds

73

70

67

64

61

58

55

Fig. 17. Resistive Turn-off

Switching Times vs. Drain Current

62

60

58

t

56

RG = 5Ω, VGS = 10V

54

V

52

50

- Nanoseconds

f

t

48

46

44

42

25 30 35 40 45 50

f

= 38V

DS

t

d(off)

- - - -

I D - Amperes

© 2006 IXYS CORPORATION All rights reserved

T J = 125ºC

T J = 25ºC

T J = 25ºC

T J = 125ºC

Fig. 18. Resistive Turn-off

Switching Times vs. Gate Resistance

90

86

82

t

d ( o f f )

78

- Nanoseconds

74

70

66

62

58

54

50

130

t

120

110

100

- Nanoseconds

f

t

f

TJ = 125ºC, VGS = 10V

V

90

80

70

60

50

40

4 6 8 101214 161820

= 38V

DS

t

d(off)

- - - -

I D = 25A

I D = 50A

RG - Ohms

IXYS REF: T_160N075T (4V) 6-16-06.xls

230

210

190

170

150

130

110

90

70

50

t

d ( o f f )

- Nanoseconds