Page 1
HiPerFASTTM IGBT
LightspeedTM Series
IXGH 32N60C V
IXGT 32N60C I
V
t
CES
C25
CE(sat)typ
fi typ
= 600 V
= 60 A
= 2.1 V
= 55 ns
Symbol Test Conditions Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C110
I
CM
SSOA V
(RBSOA) Clamped inductive load, L = 100 mH @ 0.8 V
P
C
T
J
T
JM
T
stg
TJ= 25°C to 150°C 600 V
TJ= 25°C to 150°C; RGE = 1 MW 600 V
Continuous ±20 V
Transient ±30 V
TC= 25°C60A
TC= 110°C32A
TC= 25°C, 1 ms 120 A
= 15 V, TVJ = 125°C, RG = 10 W ICM = 64 A
GE
CES
TC= 25°C 200 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
M
d
Mounting torque (M3) 1.13/10 Nm/lb.in.
Weight TO-247 AD 6 g
TO-268 4 g
TO-268
(IXGT)
G
E
C (TAB)
TO-247 AD
(IXGH)
C (TAB)
G
C
E
G = Gate, C = Collector,
E = Emitter, TAB = Collector
Features
• International standard packages
JEDEC TO-247 and surface
mountable TO-268
• High current handling capability
• Latest generation HDMOSTM process
• MOS Gate turn-on
- drive simplicity
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
IXYS reserves the right to change limits, test conditions, and dimensions.
IC= 250 mA, VGE = 0 V 600 V
IC= 250 mA, VCE = V
VCE= 0.8 • V
VGE= 0 V TJ = 150°C1mA
CES
GE
TJ = 25°C 200 mA
2.5 5 V
VCE= 0 V, VGE = ±20 V ±100 nA
IC= I
, VGE = 15 V 2.1 2.5 V
C110
© 2000 IXYS All rights reserved
Applications
• PFC circuits
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
power supplies
• AC motor speed control
• DC servo and robot drives
• DC choppers
Advantages
• High power density
• Very fast switching speeds for high
frequency applications
97538B (7/00)
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Page 2
IXGH 32N60C
IXGT 32N60C
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
g
C
C
C
Q
Q
Q
t
t
t
t
E
t
t
E
t
t
E
R
R
fs
ies
oes
res
g
ge
gc
d(on)
ri
d(off)
fi
off
d(on)
ri
on
d(off)
fi
off
thJC
thCK
IC= I
Pulse test, t £ 300 ms, duty cycle £ 2 %
; VCE = 10 V, 25 S
C110
2700 pF
VCE = 25 V, VGE = 0 V, f = 1 MHz 190 pF
50 pF
110 nC
IC = I
, VGE = 15 V, VCE = 0.5 V
C110
CES
22 nC
40 nC
Inductive load, TJ = 25°C
IC = I
VCE = 0.8 V
, VGE = 15 V, L = 100 mH,
C110
, RG = R
CES
= 4.7 W
off
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • V
higher TJ or increased R
G
Inductive load, TJ = 150°C
IC = I
V
, VGE = 15 V, L = 100 mH
C110
= 0.8 V
CE
, RG = R
CES
= 4.7 W
off
Remarks: Switching times may
increase for V
higher TJ or increased R
(Clamp) > 0.8 • V
CE
G
CES
CES
,
,
25 ns
20 ns
85 ns
55 ns
0.32 mJ
25 ns
25 ns
0.30 mJ
110 170 ns
105 160 ns
0.85 1.25 mJ
0.62 K/W
(IXGH32N60C) 0.25 K/W
TO-247 AD (IXGH) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
TO-268AA (D3 PAK)
© 2000 IXYS All rights reserved
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.9 5.1 .193 .201
2.7 2.9 .106 .114
A
1
A2.02 .25 .001 .010
b 1.15 1.45 .045 .057
b
1.9 2.1 .75 .83
2
C .4 .65 .016 .026
D 13.80 14.00 .543 .551
E 15.85 16.05 .624 .632
E
13.3 13.6 .524 .535
1
e 5.45 BSC .215 BSC
H 18.70 19.10 .736 .752
L 2.40 2.70 .094 .106
L1 1.20 1.40 .047 .055
L2 1.00 1.15 .039 .045
L3 0.25 BSC .010 BSC
L4 3.80 4.10 .150 .161
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
Min. Recommended Footprint
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Page 3
IXGH 32N60C
IXGT 32N60C
100
TJ = 25°C
VGE = 15V
13V
11V
80
60
40
- Amperes
C
I
20
0
012345
VCE - Volts
Fig. 1. Output Characteristics
100
TJ = 125°C
80
VGE = 15V
13V
60
40
- Amperes
C
I
20
0
012345
VCE - Volts
11V
7V
9V
5V
5V
7V
9V
200
160
TJ = 25°C
VGE = 15V
13V
120
80
- Amperes
C
I
40
0
0246810
VCE - Volts
Fig. 2. Extended Output Characteristics
1.50
VGE = 15V
1.25
1.00
- Normalized
CE (sat)
0.75
V
I
= 64A
C
I
= 32A
C
IC = 16A
0.50
25 50 75 100 125 150
TJ - Degrees C
11V
9V
7V
5V
Fig. 3. High Temperature Output Characteristics Fig. 4. Temperature Dependence of V
100
V
= 10V
CE
80
60
40
- Amperes
C
I
T
= 125°C
J
20
0
345678910
VGE - Volts
Fig. 5. Admittance Curves
© 2000 IXYS All rights reserved
TJ = 25°C
Capacitance - pF
10000
C
iss
1000
C
oss
100
C
rss
10
0 5 10 15 20 25 30 35 40
VCE-Volts
Fig. 6. Capacitance Curves
CE(sat)
f = 1Mhz
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Page 4
IXGH 32N60C
IXGT 32N60C
1.00
TJ = 125°C
RG = 10
E
(OFF)
0.75
E
(ON)
0.50
- millijoules
(ON)
E
0.25
0.00
0 20406080
IC - Amperes
Fig. 7. Dependence of EON and E
OFF
16
I
= 32A
C
V
= 300V
CE
12
8
- Volts
GE
V
4
4
E
(OFF)
3
- milliJoules
2
1
0
4
TJ = 125°C
3
E
(ON)
IC = 64A
2
- millijoules
E
(ON)
E
(ON)
1
E
(ON)
IC = 32A
= 16A
I
C
0
0 102030405060
RG - Ohms
on IC. Fig. 8. Dependence of EON and E
100
64
10
- Amperes
C
1
I
TJ = 125°C
RG = 4.7
dV/dt < 5V/ns
E
(OFF)
E
(OFF)
E
(OFF)
on RG.
OFF
8
E
6
(OFF)
- millijoules
4
2
0
0
0 25 50 75 100 125
Qg - nanocoulombs
Fig. 9. Gate Charge
0.1
0 100 200 300 400 500 600
VCE - Volts
Fig. 10. Turn-off Safe Operating Area
1
D=0.5
D=0.2
0.1
D=0.1
D=0.05
(K/W)
D=0.02
thJC
D=0.01
Z
0.01
Single pulse
D = Duty Cycle
0.001
0.00001 0.0001 0.001 0.01 0.1 1
Pulse Width - Seconds
Fig. 11. Transient Thermal Resistance
© 2000 IXYS All rights reserved
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