Page 1
Advance Technical Data
HiPerFASTTM IGBT
ISOPLUS247
TM
IXGR 60N60B2
IXGR 60N60B2D1
V
I
C25
V
B2-Class High Speed IGBTs
t
(Electrically Isolated Back Surface)
D1
Symbol Test Conditions Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C110
I
CM
SSOA VGE= 15 V, TVJ = 125°C, RG = 10 Ω ICM = 150 A
(RBSOA) Clamped inductive load @ VCE ≤ 600 V
P
C
T
J
T
JM
T
stg
V
ISOL
Weight 5g
Symbol Test Conditions Characteristic Values
V
GE(th)
I
CES
TJ= 25°C to 150°C 600 V
TJ= 25°C to 150°C; RGE = 1 MΩ 600 V
Continuous ±20 V
Transient ±30 V
TC= 25°C (limited by leads) 75 A
TC= 110°C47A
TC= 25°C, 1 ms 300 A
TC= 25°C 250 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
50/60 Hz, RMS, t = 1m 2500 V
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
IC= 250 µA, VCE = V
VCE= V
VGE= 0 V TJ = 125°C 5 mA
CES
GE
3.0 5.0 V
300 µA
fi(typ)
PLUS247(IXGR)
G = Gate C = Collector
E = Emitter
Features
z
z
z
z
z
Applications
z
z
z
z
z
Advantages
z
z
z
CES
= 600 V
= 75 A
CE(sat)
= 2.0 V
= 100 ns
E153432
C
E
DCB Isolated mounting tab
Meets TO-247AD package Outline
High current handling capability
Latest generation HDMOSTM process
MOS Gate turn-on
- drive simplicity
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
Easy assembly
High power density
Very fast switching speeds for high
frequency applications
(ISOLATED TAB)
I
GES
V
CE(sat)
© 2004 IXYS All rights reserved
VCE= 0 V, VGE = ±20 V ±100 nA
IC= 50 A, VGE = 15 V 2.0 V
Note 1
DS99161(04/04)
Page 2
IXGR 60N60B2
IXGR 60N60B2D1
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
g
C
C
C
Q
Q
Q
t
t
t
t
E
t
t
E
t
t
E
R
R
fs
ies
oes
res
g
ge
gc
d(on)
ri
d(off)
fi
off
d(on)
ri
on
d(off)
fi
off
thJC
thCK
IC= 50 A; VCE = 10 V, 40 58 S
Note 1
3900 pF
VCE= 25 V, VGE = 0 V, f = 1 MHz 340 pF
100 pF
170 nC
IC = 50 A, VGE = 15 V, VCE = 0.5 V
CES
25 nC
57 nC
28 ns
Inductive load, TJ = 25
I
= 50 A, VGE = 15 V
C
VCE = 400 V, RG = R
°°
°C
°°
= 3.3 Ω
off
30 ns
160 270 ns
100 170 ns
1.0 2.5 mJ
28 ns
Inductive load, TJ = 125
IC = 50 A, VGE = 15 V
= 400 V, RG = R
V
CE
= 2.0 Ω
off
°°
°C
°°
36 ns
1.5 mJ
310 ns
240 ns
2.8 mJ
0.5 K/W
0.15 K/W
ISOPLUS 247 Outline
Reverse Diode (FRED) Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
V
F
I
RM
t
rr
R
thJC
IF = 60 A, VGE = 0 V, 2.1 V
Note 1 TJ = 150°C 1.4 V
IF = 60 A, VGE = 0 V, -diF/dt = 100 A/µ TJ = 100°C 8.3 A
VR = 100 V
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V 35 ns
0.85 K/W
Note 1: Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 6,683,344
Page 3
Fig. 1. Output Characte ristics
@ 25 Deg. C
100
90
80
70
60
50
- Amperes
40
C
I
30
20
10
0
0.511.522.53
V
= 15V
GE
13V
11V
V
- Volts
C E
9V
7V
5V
IXGR 60N60B2
IXGR 60N60B2D1
Fig. 2. Extended Output Characteristics
@ 25 deg. C
350
300
250
200
150
- Amperes
C
I
100
50
0
012345678
V
= 15V
GE
13V
V
- Volts
C E
11V
9V
7V
5V
Fig. 3. Output Characteristics
@ 125 Deg. C
100
90
80
70
60
50
- Amperes
40
C
I
30
20
10
0
0.511.522.53
V
= 15V
GE
13V
11V
9V
7V
5V
VCE - Volts
Fig. 5. Collector-to-Em itter Voltage
vs. Gate -to-Emitter volt age
3.7
T
= 25ºC
3.4
3.1
2.8
2.5
- Volts
C E
V
2.2
1.9
1.6
1.3
5 6 7 8 9 10 11 12 13 14 15 16 17
IC = 100A
50A
25A
V
G E
- Volts
J
Fig. 4. Dependence of V
CE(sat)
on
Tem perature
1.4
1.3
1.2
1.1
1.0
- Normalized
0.9
C E (s at)
V
0.8
0.7
0.6
VGE = 15V
IC = 100A
IC = 50A
IC = 25A
-50 -25 0 25 50 75 100 125 150
TJ - Degr e es Cen t igr a de
Fig. 6. Input Admittance
300
250
200
150
- Amperes
C
I
100
TJ = 125ºC
50
-40ºC
0
45678910
V
G E
TJ = 25ºC
- Volts
© 2004 IXYS All rights reserved
Page 4
Fig. 7. Transconductance
100
90
TJ = -40ºC
80
25ºC
70
125ºC
60
50
- Siemens
40
f s
g
30
20
10
0
0 50 100 150 200 250 300
I C - Amperes
IXGR 60N60B2
IXGR 60N60B2D1
Fig. 8. Depe ndence of Turn-Off
Energy on R
10
TJ = 125ºC
9
8
7
6
5
- milliJoules
off
4
E
3
2
1
= 15V
V
GE
V
= 400V
CE
0 5 10 15 20 25 30 35 40 45 50
R G - Ohms
G
IC = 100A
IC = 50A
IC = 25A
Fig. 9. Dependence of Turn-Off
En e r g y
7
RG = 3.3Ω
= 15V
V
6
GE
V
= 400V
CE
5
4
- MilliJoules
3
off
E
2
1
0
20 30 40 50 60 70 80 90 100
TJ = 125ºC
on I
c
TJ = 25ºC
I C - Amperes
Fig. 11. De pendence of Turn-Off
Switching Time on R
1200
1100
1000
Switching Time - nanosecond
900
800
700
600
500
400
300
200
t
d(off)
tfi -
- - - - -
T
= 125ºC
J
= 15V
V
GE
= 400V
V
CE
IC = 50A
IC = 100A
0 5 10 15 20 25 30 35 40 45 50
G
IC = 25A
R G - Ohms
IXYS reserves the right to change limits, test conditions, and dimensions.
Fig. 10. De pendence of Turn-Off
Energy on Tem perature
7
RG = 3.3Ω
V
= 15V
6
5
4
3
- milliJ oules
off
E
2
1
0
25 35 45 55 65 75 85 95 105 115 125
V
GE
= 400V
CE
IC = 100A
IC = 50A
IC = 25A
TJ - Degrees Centigrade
Fig. 12. Dependence of Turn-Off
Switching Time
400
350
300
250
200
150
Switching Time - nanosecond
100
50
20 30 40 50 60 70 80 90 100
TJ = 125ºC
TJ = 25ºC
on I
c
t
d(off)
t
fi
R
V
V
I C - Amperes
- - - - - -
= 3.3Ω
G
= 15V
GE
= 400V
CE
Page 5
IXGR 60N60B2
F
IXGR 60N60B2D1
Fig. 13. De pendence of Turn-Off
Switching Time on Tem perature
350
t
d(off)
tfi -
- - - - -
= 3. 3Ω
R
G
= 15V
V
GE
= 400V
V
CE
50
25 35 45 55 65 75 85 95 105 115 125
IC = 25A
50A
100A
IC = 100A
50A
25A
Switching Time - nanosecond
300
250
200
150
100
TJ - Degrees Centigrade
Fig. 15. Capacitance
10000
f = 1 MHz
1000
Fig. 14. Gate Charge
15
V
= 300V
CE
= 50A
12
- Volts
GE
V
I
C
= 10m A
I
G
9
6
3
0
0 20 40 60 80 100 120 140 160 180
QG - nanoCoulombs
C
ies
C
oes
Capacitance - p
100
C
res
10
0 5 10 15 20 25 30 35 40
VCE - Volts
Fig. 13. Maximum Transient Thermal Resistance
0.55
0.5
0.45
0.4
0.35
ºC / W
0.3
-
0.25
( t h ) J C
0.2
R
0.15
0.1
0.05
0
1 10 100 1000
Pulse Width - milliseconds
© 2004 IXYS All rights reserved
Page 6
160
A
140
4000
nC
TVJ= 100°C
V
= 300V
R
80
A
IXGR 60N60B2
IXGR 60N60B2D1
TVJ= 100°C
VR = 300V
120
I
F
TVJ= 25°C
100
TVJ=100°C
80
TVJ=150°C
60
40
20
0
012
V
F
Fig. 17. Forward current IF versus V
2.0
1.5
K
f
1.0
I
RM
0.5
Q
r
0.0
0 40 80 120 160
°C
T
VJ
Fig. 20. Dynamic parameters Qr, I
Z
0.01
versus T
1
K/W
0.1
thJC
VJ
3000
Q
r
2000
IF=120A
= 60A
I
F
I
= 30A
F
1000
0
V
100 1000
A/µs
-diF/dt
F
Fig. 18. Reverse recovery charge Q
versus -diF/dt
140
ns
TVJ= 100°C
VR = 300V
r
130
t
rr
120
IF=120A
60
I
RM
40
IF=120A
I
= 60A
F
= 30A
I
F
20
0
-di
F
A/µs
/dt
200 600 10000 400 800
Fig. 19. Peak reverse current I
versus -diF/dt
20
V
V
FR
15
t
fr
V
FR
RM
1.6
µs
t
fr
1.2
IF= 60A
110
IF= 30A
10
0.8
100
90
5
TVJ= 100°C
0.4
IF = 60A
80
200 600 10000 400 800
RM
Fig. 21. Recovery time trr versus -diF/dt Fig. 22. Peak forward voltage VFR and
-di
A/µs
/dt
F
0
0 200 400 600 800 1000
diF/dt
t
fr
Constants for Z
versus diF/dt
calculation:
thJC
iR
(K/W) ti (s)
thi
A/µs
0.0
1 0.3073 0.0055
2 0.3533 0.0092
3 0.0887 0.0007
4 0.1008 0.0399
0.001
0.0001
0.00001 0.0001 0.001 0.01 0.1 1
t
Fig. 23. Transient thermal resistance junction to case
IXYS reserves the right to change limits, test conditions, and dimensions.
DSEP 2x61-06A
s
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