Page 1
HiPerFAST
TM
IGBT with Diode
C2-Class High Speed IGBTs
Preliminary Data Sheet
IXGR 50N60C2
IXGR 50N60C2D1
V
CES
I
C25
V
CE(sat)
t
fi(typ)
= 600 V
= 75 A
= 2.7 V
= 48 ns
Symbol Test Conditions Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C110
I
CM
SSOA VGE= 15 V, TVJ = 125°C, RG = 10 Ω ICM = 100 A
(RBSOA) Clamped inductive load @ VCE ≤ 600 V
P
C
V
ISOL
T
J
T
JM
T
stg
Weight 5g
TJ= 25°C to 150°C 600 V
TJ= 25°C to 150°C; RGE = 1 MΩ 600 V
Continuous ±20 V
Transient ±30 V
TC= 25°C75A
TC= 110°C36A
TC= 25°C, 1 ms 300 A
TC= 25°C 200 W
50/60 Hz RMS, t = 1m 2500 V
-55 ... +150 °C
150 °C
-55 ... +150 °C
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
ISOPLUS247
(IXGR)
G = Gate C = Collector
E = Emitter
Features
• Very high frequency IGBT and
anti-parallel FRED in one package
• Square RBSOA
• High current handling capability
• MOS Gate turn-on for drive simplicity
• Fast Recovery Epitaxial Diode (FRED)
Applications
• Switch-mode and resonant-mode
• Uninterruptible power supplies (UPS)
• DC choppers
• AC motor speed control
• DC servo and robot drives
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
V
I
I
V
CES
GES
GE(th)
CE(sat)
IC= 250 µA, VCE = V
VCE= V
VGE= 0 V TJ = 125°C 5 mA
VCE= 0 V, VGE = ±20 V ±100 nA
IC= 40 A, VGE = 15 V TJ = 25°C 2.7 V
Note 1 TJ = 125°C 1.8 V
CES
GE
TJ = 25°C 650 µA
3.0 5.0 V
Advantages
• Space savings (two devices in one
• Easy to mount with 1 screw
(ISOLATED TAB)
with soft recovery and low I
power supplies
package)
RM
© 2004 IXYS All rights reserved
DS99163(04/04)
Page 2
IXGR 50N60C2
IXGR 50N60C2D1
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
g
C
C
C
Q
Q
Q
t
t
t
t
E
t
t
E
t
t
E
R
R
fs
ies
oes
res
g
ge
gc
d(on)
ri
d(off)
fi
off
d(on)
ri
on
d(off)
fi
off
thJC
thCK
IC= 40 A; VCE = 10 V, 40 51 S
Note 1
3700 pF
VCE= 25 V, VGE = 0 V, f = 1 MHz 290 pF
50 pF
138 nC
IC = 40 A, VGE = 15 V, VCE = 0.5 V
CES
25 nC
40 nC
18 ns
Inductive load, TJ = 25
I
= 40 A, VGE = 15 V
C
VCE = 480 V, RG = R
°°
°C
°°
= 2.0 Ω
off
25 ns
115 150 n s
48 ns
0.38 0.7 mJ
18 ns
Inductive load, TJ = 125
IC = 40 A, VGE = 15 V
= 480 V, RG = R
V
CE
= 2.0 Ω
off
°°
°C
°°
25 ns
1.4 mJ
170 ns
60 ns
0.74 mJ
0.62 K/W
0.15 K/W
ISOPLUS 247 Outline
Reverse Diode (FRED) Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
V
F
I
RM
t
rr
R
thJC
IF = 60 A, VGE = 0 V, 2.1 V
Note 1 TJ = 150°C 1.4
IF = 60 A, VGE = 0 V, -diF/dt = 100 A/µ TJ = 100°C 8.3 A
VR = 100 V
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V 35 ns
0.85 K/W
Note 1: Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 6,683,344
Page 3
IXGR 50N60C2
IXGR 50N60C2D1
Fig. 1. Output Characte r is tics
@ 25 Deg. C
80
70
60
50
40
- Amperes
C
30
I
20
10
0
0.5 1 1.5 2 2.5 3 3.5 4
V
= 15V
GE
13V
11V
V
- Volts
C E
Fig. 3. Output Characte r is tics
@ 125 Deg. C
80
70
60
50
40
- Amperes
C
30
I
20
10
0
0.5 1 1. 5 2 2.5 3 3.5 4
V
= 15V
GE
13V
11V
9V
7V
6V
5V
VCE - Volts
9V
5V
7V
6V
Fig. 2. Extended Output Characte ristics
@ 25 deg. C
320
280
240
200
160
- Amperes
120
C
I
80
40
0
012345678910
V
= 15V
GE
13V
V
- Volts
C E
Fig. 4. Depe ndence of V
11V
9V
7V
5V
CE(sat)
Tem pe rature
1.2
VGE = 15V
1.1
1.0
0.9
- Normalized
0.8
C E ( s a t )
0.7
V
0.6
0.5
25 50 75 100 125 150
IC = 20A
IC = 40A
IC = 80A
TJ - Degrees Centigrade
on
Fig. 5. Collector -to-Em itter Voltage
vs. Gate-to-Emitter voltage
4.8
4.5
4.2
3.9
3.6
- Volts
C E
V
3.3
3
2.7
2.4
567891011121314151617
IC = 80A
40A
20A
© 2004 IXYS All rights reserved
V
- Volts
G E
T
J
= 25ºC
Fig. 6. Input Adm ittance
200
180
160
140
120
100
- Amperes
80
C
I
60
TJ = 125ºC
40
25ºC
20
0
4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9
V
- Volts
G E
Page 4
IXGR 50N60C2
IXGR 50N60C2D1
Fig. 7. Transconductance
70
TJ = 25ºC
60
125ºC
50
40
- Siemens
30
f s
g
20
10
0
0 20 40 60 80 100 120 140 160 180 200
I C - Amperes
Fig. 9. Dependence of Turn-Off
En e r g y
2.2
1.8
1.6
1.4
1.2
- MilliJoules
o f f
0.8
E
0.6
0.4
0.2
RG = 2Ω
2
R
= 10Ω - - - -
G
= 15V
V
GE
V
= 480V
CE
1
0
20 30 40 50 60 70 80
TJ = 125ºC
on I
c
I C - Amperes
TJ = 25ºC
Fig. 8. Depende nce of Turn-Off
En e r g y o n R
3
2.7
2.4
2.1
1.8
1.5
- milliJoules
1.2
o f f
E
0.9
0.6
0.3
TJ = 125ºC
= 15V
V
GE
= 480V
V
CE
0
2 4 6 8 10 12 14 16 18
G
IC = 80A
IC = 40A
IC = 20A
R G - Ohms
Fig. 10. Dependence of Turn-Off
Energy on Temperature
2.4
RG = 2Ω
2.1
1.8
1.5
1.2
- milliJoules
0.9
o f f
E
0.6
0.3
0
= 10Ω - - - -
R
G
= 15V
V
GE
= 480V
V
CE
IC = 80A
IC = 40A
IC = 20A
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 11. Depe ndence of Turn-Off
Switching Time on R
450
t
400
350
300
250
200
150
Switching Time - nanos econds
100
d(off)
tfi -
- - - - -
= 125ºC
T
J
= 15V
V
GE
= 480V
V
CE
IC = 40A
IC = 80A
50
2 4 6 8 10 12 14 16 18
R G - Ohms
G
IC = 20A
200
180
160
140
120
100
Switching Time - nanoseconds
Fig. 12. Dependence of Turn-Off
Switching Tim e
t
d(off)
t
- - - - - -
fi
= 2Ω
R
G
= 15V
V
GE
= 480V
V
CE
80
60
40
20 30 40 50 60 70 80
TJ = 25ºC
on I
TJ = 125ºC
c
I C - Amperes
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 6,683,344
Page 5
IXGR 50N60C2
IXGR 50N60C2D1
Fig. 13. Dependence of Turn-Off
Switching Time on Tem perature
200
t
180
160
140
120
100
Switching Time - nanoseconds
d(off)
tfi -
- - - - -
R
= 2Ω
G
= 15V
V
GE
= 480V
V
CE
80
60
40
20
IC = 40A
25 35 45 55 65 75 85 95 105 115 125
IC = 20A
IC = 20A
TJ - Degrees Centigrade
Fig. 15. Gate Charge
16
V
= 300V
14
12
10
CE
= 40A
I
C
= 10mA
I
G
IC = 80A
Fig. 14. Re ve r s e -Bias
Safe Operating Area
90
80
70
60
50
40
- Amperes
C
30
I
20
10
0
100 200 300 400 500 600
TJ = 125ºC
R
= 10Ω
G
dV/dT < 10V/ns
V
C E
- Volts
Fig. 16. Capacitance
10000
f = 1 MHz
1000
C
ies
8
- Volts
G E
6
V
4
2
0
0 30 60 90 120 150
Q G - nanoCoulombs
Fig. 16. Maximum Transient Thermal Resistance
0.70
0.60
0.50
ºC / W
0.40
-
0.30
( t h ) J C
R
0.20
0.10
C
100
oes
Capacitance - picoFar rads
C
res
10
0 5 10 15 20 25 30 35 40
V
- Volts
C E
0.00
1 10 100 1000
© 2004 IXYS All rights reserved
Pulse Width - milliseconds
Page 6
160
A
140
4000
nC
TVJ= 100°C
V
= 300V
R
80
A
IXGR 50N60C2
IXGR 50N60C2D1
TVJ= 100°C
VR = 300V
120
I
F
TVJ= 25°C
100
TVJ=100°C
80
TVJ=150°C
60
40
20
0
012
V
F
Fig. 18 Forward current IF versus V
2.0
1.5
K
f
1.0
I
RM
0.5
Q
r
0.0
0 40 80 120 160
°C
T
VJ
Fig. 21 Dynamic parameters Qr, I
Z
versus T
1
K/W
0.1
thJC
0.01
VJ
3000
Q
r
2000
IF=120A
= 60A
I
F
I
= 30A
F
1000
0
V
100 1000
A/µs
-diF/dt
F
Fig. 19 Reverse recovery charge Q
versus -diF/dt
140
ns
TVJ= 100°C
VR = 300V
r
130
t
rr
120
IF=120A
60
I
RM
40
IF=120A
I
= 60A
F
= 30A
I
F
20
0
-di
F
A/µs
/dt
200 600 10000 400 800
Fig. 20 Peak reverse current I
versus -diF/dt
20
V
V
FR
15
t
fr
V
FR
RM
1.6
µs
t
fr
1.2
IF= 60A
110
IF= 30A
10
0.8
100
90
5
TVJ= 100°C
0.4
IF = 60A
80
200 600 10000 400 800
RM
Fig. 22 Recovery time trr versus -diF/dt Fig. 23 Peak forward voltage VFR and
-di
A/µs
/dt
F
0
0 200 400 600 800 1000
diF/dt
t
fr
Constants for Z
versus diF/dt
calculation:
thJC
iR
(K/W) ti (s)
thi
A/µs
0.0
1 0.3073 0.0055
2 0.3533 0.0092
3 0.0887 0.0007
4 0.1008 0.0399
0.001
0.0001
0.00001 0.0001 0.001 0.01 0.1 1
DSEP 2x61-06A
s
t
Fig. 24 Transient thermal resistance junction to case
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 6,683,344
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