Page 1
HiPerFASTTM IGBT
ISOPLUS247
TM
IXGR 50N60B2
IXGR 50N60B2D1
B2-Class High Speed IGBTs
(Electrically Isolated Back Surface)
V
CES
I
C25
V
CE(sat)
t
fi(typ)
= 600 V
= 68 A
= 2.2 V
= 65 ns
Preliminary Data Sheet
IXGR_B2 IXGR_B2D1
Symbol Test Conditions Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C110
I
F110
I
CM
SSOA V
(RBSOA) Clamped inductive load @ V
P
C
T
J
T
JM
T
stg
V
ISOL
TJ = 25°C to 150°C 600 V
TJ = 25°C to 150°C; RGE = 1 MΩ 600 V
Continuous ±20 V
Transient ±30 V
TC = 25°C (limited by leads) 68 A
TC = 110°C 36 A
TC = 110°C (50N60B2D1 Diode) 39 A
TC = 25°C, 1 ms 300 A
= 15 V, TVJ = 125°C, RG = 10 Ω ICM = 100 A
GE
≤ 600 V
CE
TC = 25°C 200 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
50/60 Hz RMS, t = 1m 2500 V
Weight 5g
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
ISOPLUS247
(IXGR)
G
C
E
(ISOLATED TAB)
G = Gate C = Collector
E = Emitter
Features
z
DCB Isolated mounting tab
z
Meets TO-247AD package Outline
z
High current handling capability
z
Latest generation HDMOSTM process
z
MOS Gate turn-on
- drive simplicity
Applications
z
Uninterruptible power supplies (UPS)
z
Switched-mode and resonant-mode
power supplies
z
AC motor speed control
z
DC servo and robot drives
z
DC choppers
Advantages
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
V
GE(th)
I
CES
I
GES
V
CE(sat)
© 2004 IXYS All rights reserved
IC = 250 µA, VCE = V
VCE= V
VGE= 0 V 50N60B2D1 650 µA
CES
VCE= 0 V, VGE = ±20 V ±100 nA
IC = 40 A, VGE = 15 V 1.8 2.2 V
Note 1 TJ = 125°C 1.7 V
GE
50N60B2 50 µA
3.0 5.0 V
z
Easy assembly
z
High power density
z
Very fast switching speeds for high
frequency applications
DS99144A(05/04)
Page 2
IXGR 50N60B2
IXGR 50N60B2D1
Symbol Test Conditions Characteristic Values
= 25°C, unless otherwise specified)
(T
J
g
fs
C
ies
C
oes
IC = 40 A; VCE = 10 V, 40 55 S
Note 1
VCE= 25 V, VGE = 0 V, f = 1 MHz 50N60B2 240 pF
Min. Typ. Max.
3500 pF
50N60B2D1 280 pF
C
Q
Q
Q
t
t
t
t
E
t
t
E
t
t
E
R
R
R
d(on)
ri
d(off)
fi
d(on)
ri
d(off)
fi
res
g
ge
gc
off
on
off
thJ-DCB
thJC
thCS
IC = 40 A, VGE = 15 V, VCE = 0.5 V
CES
Inductive load, TJ = 25°C
I
= 40 A, VGE = 15 V
C
VCE = 480 V, RG = R
= 5.0 Ω
off
Inductive load, TJ = 125°C
IC = 40 A, VGE = 15 V
= 480 V, RG = R
V
CE
= 5.0 Ω
off
(Note 2) 0.31 K/W
(Note 3) 0.62 K/W
0.15 K/W
50 pF
140 nC
23 nC
44 nC
18 ns
25 ns
190 300 ns
65 ns
0.55 0.85 mJ
18 ns
25 ns
0.9 mJ
290 ns
140 ns
1.55 mJ
ISOPLUS 247 Outline
Reverse Diode (FRED) Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
V
F
I
RM
t
rr
R
thJC
IF = 60 A, VGE = 0 V, 2.0 V
Note 1 TJ = 150°C 1.39
IF = 60 A, VGE = 0 V, -diF/dt = 100 A/µ TJ = 100°C 8.3 A
VR = 100 V
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V 35 ns
0.85 K/W
Notes 1: Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
2: R
3: R
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 6,683,344
is the thermal resistance junction-to-internal side of DCB substrate.
thJ-DCB
is the thermal resistance junction-to-external side of DCB substrate.
thJC
Page 3
IXGR 50N60B2
IXGR 50N60B2D1
Fig. 1. Output Characte r is tics
@ 25 Deg. C
80
70
60
50
40
- Amperes
C
30
I
20
10
0
0.5 1 1.5 2 2.5 3
V
= 15V
GE
13V
11V
V
- Volts
C E
9V
7V
6V
5V
Fig. 3. Output Characte r is tics
@ 125 Deg. C
80
70
60
V
= 15V
GE
13V
11V
9V
7V
Fig. 2. Exte nde d Output Char acte ris t ics
@ 25 deg. C
320
280
240
200
160
- Amperes
120
C
I
80
40
0
012345678
V
= 15V
GE
13V
V
C E
11V
9V
7V
5V
- Volts
Fig. 4. Dependence of V
CE(sat)
Tem pe rature
1.4
1.3
1.2
VGE = 15V
IC = 80A
on
50
40
- Amperes
C
30
I
20
10
0
0.5 1 1.5 2 2.5 3
VCE - Volts
Fig. 5. Collector -to-Em itte r Voltage
vs. Gate-to-Emitter voltage
3.7
T
3.4
3.1
2.8
2.5
- Volts
C E
V
2.2
1.9
1.6
1.3
567891011121314151617
IC = 80A
40A
20A
V
G E
- Volts
J
6V
5V
= 25ºC
1.1
1.0
- Normalized
0.9
C E (s at)
V
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
IC = 40A
IC = 20A
TJ - Degrees Centigrade
Fig. 6. Input Adm ittance
200
180
160
140
120
100
- Amperes
80
C
I
TJ = 125ºC
60
25ºC
40
-40ºC
20
0
4 4.5 5 5.5 6 6.5 7 7.5 8 8.5
V
- Volts
G E
© 2004 IXYS All rights reserved
Page 4
IXGR 50N60B2
IXGR 50N60B2D1
Fig. 7. Transconductance
80
TJ = -40ºC
70
25ºC
60
125ºC
50
40
- Siemens
f s
30
g
20
10
0
0 20 40 60 80 100 120 140 160 180 200
I C - Amperes
Fig. 9. Dependence of Turn-Off
En e r g y
4
RG = 5Ω
= 24.4 Ω - - - -
R
3.5
2.5
- MilliJoules
off
1.5
E
G
= 15V
V
GE
3
2
1
V
= 480V
CE
TJ = 125ºC
on I
TJ = 25ºC
C
Fig. 8. Dependence of Turn-Off
En e r g y o n R
5
4.5
3.5
2.5
- milliJoules
off
E
1.5
0.5
TJ = 125ºC
V
= 15V
GE
= 480V
V
4
3
2
1
0
CE
5 101520253035404550
G
IC = 80A
IC = 40A
IC = 20A
R G - Ohms
Fig. 10. Dependence of Turn-Off
Energy on Tem perature
4
3.5
3
2.5
2
- milliJoules
1.5
off
E
1
RG = 5Ω
= 24.4Ω - - -
R
G
= 15V
V
GE
= 480V
V
CE
IC = 80A
IC = 40A
0.5
0
20 30 40 50 60 70 80
I C - Amperes
Fig. 11. Dependence of Turn-Off
1000
500
t
d(off)
tfi -
T
= 125ºC
J
V
GE
V
CE
Switching Time on R
- - - - -
= 15V
= 480V
IC = 40A
IC = 80A
G
IC = 20A
Switching Time - nanos econd
100
5 101520253035404550
R G - Ohms
0.5
0
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 12. Dependence of Turn-Off
Switching Tim e
400
350
300
250
200
150
100
Switching Time - nanos econd
TJ = 125ºC
TJ = 25ºC
50
0
20 30 40 50 60 70 80
on I
C
t
t
R
V
V
I C - Amperes
IC = 20A
d(off)
- - - - - -
fi
= 5Ω
G
= 15V
GE
= 480V
CE
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 6,683,344
Page 5
IXGR 50N60B2
IXGR 50N60B2D1
Fig. 13. Dependence of Turn-Off
Switching Time on Tem pe rature
350
t
d(off)
tfi -
- - - - -
= 5Ω
R
G
= 15V
V
GE
= 480V
V
CE
IC = 40A
IC = 80A
0
25 35 45 55 65 75 85 95 105 115 125
Switching Time - nanosecond
300
250
200
150
100
50
TJ - Degrees Centigrade
Fig. 15. Gate Char ge
16
V
= 300V
14
12
10
I
C
I
G
CE
= 40A
= 10mA
IC = 20A
Fig. 14. Re ve rs e -Bias
Safe Oper ating Ar e a
90
80
70
60
50
40
- Amperes
C
I
30
20
10
0
TJ = 125ºC
= 10Ω
R
G
dV/dT < 10V/ns
100 200 300 400 500 600
V
- Volts
C E
Fig. 16. Capacitance
10000
f = 1 MHz
1000
C
ies
8
- Volts
G E
6
V
4
2
0
0306090120150
Q G - nanoCoulombs
Fig. 17. Maxim um Trans ient The rm al Res is tan ce
0.70
0.60
0.50
ºC / W
0.40
-
0.30
( t h ) J C
R
0.20
0.10
C
100
Capacitance - p F
10
0 5 10 15 20 25 30 35 40
V
- Volts
C E
oes
C
res
0.00
1 10 100 1000
© 2004 IXYS All rights reserved
Pulse Width - milliseconds
Page 6
IXGR 50N60B2
IXGR 50N60B2D1
160
A
140
120
I
F
TVJ= 25°C
100
TVJ=100°C
80
TVJ=150°C
60
40
20
0
012
V
F
Fig. 18 Forward current I
versus V
F
2.0
1.5
K
f
1.0
I
RM
0.5
Q
r
0.0
0 40 80 120 160
°C
T
VJ
Fig. 21 Dynamic parameters Qr, I
Z
0.01
versus T
1
K/W
0.1
thJC
VJ
4000
TVJ= 100°C
VR = 300V
nC
3000
Q
r
IF=120A
I
= 60A
F
IF= 30A
2000
1000
0
V
100 1000
A/µs
-diF/dt
F
Fig. 19 Reverse recovery charge Q
versus -diF/dt
140
ns
TVJ= 100°C
VR = 300V
r
130
t
rr
120
IF=120A
80
TVJ= 100°C
= 300V
V
R
A
60
I
RM
IF=120A
IF= 60A
40
IF= 30A
20
0
-di
F
A/µs
/dt
200 600 10000 400 800
Fig. 20 Peak reverse current I
versus -diF/dt
20
V
V
FR
15
t
fr
V
FR
RM
1.6
µs
t
fr
1.2
IF= 60A
110
IF= 30A
10
0.8
100
90
5
TVJ= 100°C
0.4
IF = 60A
80
200 600 10000 400 800
RM
Fig. 22 Recovery time trr versus -diF/dt Fig. 23 Peak forward voltage VFR and
-di
A/µs
/dt
F
0
0 200 400 600 800 1000
diF/dt
t
fr
Constants for Z
versus diF/dt
calculation:
thJC
iR
(K/W) ti (s)
thi
A/µs
0.0
1 0.3073 0.0055
2 0.3533 0.0092
3 0.0887 0.0007
4 0.1008 0.0399
0.001
0.0001
0.00001 0.0001 0.001 0.01 0.1 1
DSEP 2x61-06A
s
t
Fig. 24 Transient thermal resistance junction to case
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 6,683,344
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