Datasheet IXGR48N60C3D1 Specification

GenX3

TM

600V IGBT

with Diode

(Electrically Isolated Back Surface)

High Speed PT IGBTs for 40-100kHz Switching

IXGR48N60C3D1

V

CES

I

C25

V

CE(sat)

t

fi(typ)

= 600V = 56A

≤≤

≤ 2.7V

≤≤

= 38ns

Symbol Test Conditions Maximum Ratings V

CES

V

CGR

V

GES

V

GEM

I

C25

I

C110

I

D110

I

CM

I

A

E

AS

SSOA V (RBSOA) Clamped Inductive Load @ V

P

C

T

J

T

JM

T

stg

T

L

T

SOLD

V

ISOL

F

C

TJ= 25°C to 150°C 600 V

TJ= 25°C to 150°C, RGE = 1MΩ 600 V

Continuous ±20 V

Transient ±30 V

TC= 25°C 56 A

TC= 110°C 26 A

TC= 110°C 27 A

TC= 25°C, 1ms 230 A

TC= 25°C 30 A

TC= 25°C 300 mJ

= 15V, TVJ = 125°C, RG = 3Ω ICM = 100 A

GE

≤ 600 V

CE

TC= 25°C 125 W

-55 ... +150 °C

150 °C

-55 ... +150 °C

1.6mm (0.062 in.) from Case for 10s 300 °C

Plastic Body for 10 Seconds 260 °C

50/60 Hz RMS, t = 1min 2500 V~

Mounting Force 20..120 / 4.5..27 N/lb.

Weight 5 g

ISOPLUS 247

TM

G

C

E

ISOLATED TAB

G = Gate C = Collector E = Emitter

Features

z

Silicon Chip on Direct-Copper Bond (DCB) Substrate

- UL Recognized Package

- Isolated Mounting Surface

- 2500V Electrical Isolation

z

Avalanche Rated

z

Square RBSOA

z

Anti-Parallel Ultra Fast Diode

z

Fast Switching

z

International Standard Package

Advantages

z

High Power Density

z

Low Gate Drive Requirement

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified)

Min. Typ. Max.

V

GE(th)

I

CES

I

GES

V

CE(sat)

IC = 250μA, VCE = V

VCE = V VGE = 0V TJ = 125°C 1.75 mA

CES

GE

3.0 5.5 V

300 μA

VCE = 0V, VGE = ±20V ±100 nA

IC = 30A, VGE = 15V, Note 1 2.3 2.7 V

TJ = 125°C 1.8 V

Applications

z

High Frequency Power Inverters

z

UPS

z

Motor Drives

z

SMPS

z

PFC Circuits

z

Battery Chargers

z

Welding Machines

z

Lamp Ballasts

DS99810B(01/09)

IXGR48N60C3D1

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified)

Min. Typ. Max.

g C

C C

Q Q Q

t

d(on)

t

ri

E t

d(off)

t

fi

E t

d(on)

t

ri

E t

d(off)

t

fi

E R

R

fs

ies

oes

res

g

ge

gc

on

off

on

off

thJC thCS

IC= 30A VCE = 10V, Note 1 20 30 S

1960 pF

VCE= 25V, VGE = 0V, f = 1MHz 220 pF

66 pF

77 nC

IC = 30A, VGE = 15V, VCE = 0.5 • V

CES

16 nC

32 nC

19 ns

Inductive Load, T

IC = 30A, VGE = 15V

V

= 400V, RG = 3Ω

CE

= 25°C

J

26 ns

0.41 mJ

60 100 ns

38 ns

0.23 0.55 mJ

19 ns

Inductive Load, T

IC = 30A, VGE = 15V

V

= 400V, RG = 3Ω

CE

= 125°C

J

26 ns

0.65 mJ 92 ns 95 ns

0.57 mJ

1.0 °C/W

0.15 °C/W

ISOPLUS247 (IXGR) Outline

Reverse Diode (FRED) Characteristic Values

(TJ = 25°C, Unless Otherwise Specified)

Symbol Test Conditions Min. Typ. Max. V

IF = 30A, VGE = 0V, Note 1 TJ =25°C 2.7 V

F

I

RM

t

rr VR

IF = 1A, -di/dt = 100A/μs; VR = 30V 25 ns

R

thJC

= 30A, VGE = 0V, -diF/dt =100A/μs, TJ = 100°C 4 A

F

= 100V TJ =100°C 100 ns

1.5 °C/W

Note 1: Pulse test, t ≤ 300μs, Duty cycle, d ≤ 2 %.

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

IXGR48N60C3D1

Fig. 1. Output Characteristics

@ 25ºC

60

55

50

45

40

35

30

- Amperes

25

C

I

20

15

10

5

0

0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3

VCE - Volts

V

= 15V

GE

13V 11V

Fig. 3. Output Characteristics

@ 125ºC

60

55

50

45

40

35

30

25

- Amperes

C

I

20

15

10

5

0

0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3

V 13V

11V

VCE - Volts

GE

= 15V

Fig. 2. Extended Output Characteristics

@ 25ºC

300

270

240

210

180

9V

7V

150

Amperes

-

120

C

I

90

60

30

V

= 15V

GE

13V

11V

9V

7V

0

02468101214161820

VCE - Volts

Fig. 4. Dependence of V

CE(sat)

on

Junction Temperature

1.2

V

= 15V

GE

1.1

9V

7V

1.0

0.9

- Normalized

0.8

CE(s at)

V

0.7

0.6

0.5 25 50 75 100 125 150

I C = 60A

I C = 30A

I C = 15A

TJ - Degrees Centigrade

Fig. 5. Collector-to-Emitter Voltage

vs. Gate-to-Emitter Voltage

5.0

4.5

4.0

3.5

- Volts

CE

V

3.0

2.5

2.0 7 8 9 101112131415

I

= 60A

C

30A 15A

VGE - Volts

TJ = 25ºC

Fig. 6. Input Admittance

100

90

80

70

60

50

Amperes

-

40

C

I

30

20

10

0

5 5.5 6 6.5 7 7.5 8 8.5 9 9 .5 1 0

TJ = -125ºC 25ºC

- 40ºC

VGE - Volts

IXGR48N60C3D1

Fig. 7. Transconductance

50

45

40

35

30

25

Siemens

-

20

f s

g

15

10

5

0

0 1020304050 60708090100110120

IC - Amperes

T

J

= - 40ºC

125ºC

Fig. 9. Capacitance

10,000

= 1 MHz

f

C

ies

1,000

C

oes

100

Capacitance - PicoFarads

10

0 5 10 15 20 25 30 35 40

VCE - Volts

C

res

25ºC

Fig. 8. Gate Charge

16

V

= 300V

14

12

10

- Volts

GE

V

CE

I

= 30A

C

I

= 10 mA

G

8

6

4

2

0

0 102030 4050607080

QG - NanoCoulombs

Fig. 10. Reverse-Bias Safe Operating Area

110

100

90

80

70

60

50

- Amperes

C

I

40

30

T

= 125ºC

J

R

= 3Ω

20

10

G

dV / dt < 10V / ns

0

200 250 300 350 400 450 500 550 600 650

VCE - Volts

Fig. 11. Maximum Transient Thermal Impedance

10.00

1.00

- ºC / W

(th)JC

Z

0.10

0.01

0.00001 0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS REF: G_48N60C3D1(5D)01-23-09-B

IXGR48N60C3D1

Fig. 12. Inductive Switching

Energy Loss vs. Gate Resistance

2.4

E

2.2

2.0

1.8

1.6

1.4

1.2

- MilliJoules

1.0

off

E

0.8

0.6

0.4

0.2

0.0

E

off

TJ = 125ºC , VGE = 15V

= 400V

V

CE

0 5 10 15 20 25 30 35

on

- - - -

I C = 60A

I C = 30A

I C = 15A

RG - Ohms

Fig. 14. Inductive Swiching

Energy Loss vs. Junction Temperature

2.0

E

1.8

1.6

1.4

1.2

1.0

- MilliJoules

0.8

off

E

0.6

0.4

0.2

0.0

off

RG = 3

V

= 400V

CE

25 35 45 55 65 75 85 95 105 115 125

- - - -

on

VGE = 15V

,

Ω

TJ - Degrees Centigrade

I C = 60A

I C = 30A

I

= 15A

C

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

2.6

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

Fig. 13. Inductive Swiching

Energy Loss vs. Collector Current

2.0

E

1.8

1.6

E

on

- MilliJoules

1.4

1.2

1.0

- MilliJoules

0.8

off

E

0.6

0.4

0.2

0.0

off

RG = 3

= 400V

V

CE

TJ = 125ºC, 25ºC

15 20 25 30 35 40 45 50 55 60

Ω ,

- - - -

on

VGE = 15V

IC - Amperes

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

E

on

- MilliJoules

Fig. 15. Inductive Turn-off

Switching Times vs. Gate Resistance

130

125

120

115

E

on

- Mill iJoules

110

105

100

95

- Nanoseconds

f

90

t

85

80

75

70

0 5 10 15 20 25 30 35

t

f

TJ = 125ºC,

= 400V

V

CE

I C = 60A

I C = 15A

t

d(off)

V

GE

- - - -

= 15V

I C = 30A

RG - Ohms

350

325

300

275

250

225

200

175

150

125

100

75

50

t

d(off)

- Nanoseconds

Fig. 16. Inductive Turn-off

Switching Times vs. Collector Current

140

t

130

120

110

100

90

80

70

- Nanoseconds

f

60

t

50

40

30

20

15 20 25 30 35 40 45 50 55 60

RG = 3

V

f

Ω

= 400V

CE

TJ = 125ºC

T

= 25ºC

J

t

- - - -

d(off)

, VGE = 15V

IC - Amperes

110

105

100

95

90

85

80

75

70

65

60

55

50

Fig. 17. Inductive Turn-off

Switching Times vs. Junction Temperature

160

t

140

t

d(off)

120

RG = 3

V

f

Ω

= 400V

CE

t

- - - -

d(off)

, VGE = 15V

- Nanoseconds

100

80

- Nanoseconds

f

t

60

40

20

25 35 45 55 65 75 85 95 105 115 125

I C = 60A

I C = 30A

I C = 15A

TJ - Degrees Centigrade

120

110

100

90

80

70

60

50

d(off)

t

- Nanoseconds

IXGR48N60C3D1

Fig. 18. Inductive Turn-on

Switching Times vs. Gate Resistance

140

t

r

TJ = 125ºC, VGE = 15V

V

CE

0

0 5 10 15 20 25 30 35

t

- Nanoseconds

r

120

100

80

60

40

20

t

d(on)

= 400V

I C = 15A, 30A

- - - -

I C = 60A

RG - Ohms

Fig. 20. Inductive Turn-on

Switching Times vs. Junction Temperature

80

70

60

50

40

t

r

RG = 3

V

CE

t

d(on)

, VGE = 15V

Ω

= 400V

- - - -

I C = 60A

Fig. 19. Inductive Turn-on

Switching Times vs. Collector Cur rent

50

45

t

d(on)

40

- Nanoseconds

35

30

25

20

15

25

24

t

23

d(on)

- Nanoseconds

22

21

110

- Nanoseconds

t

r

100

90

80

70

60

50

40

30

20

10

t

RG = 3

V 25ºC < TJ < 125ºC

0

15 20 25 30 35 40 45 50 55 60

r

Ω

= 400V

CE

t

- - - -

d(on)

, VGE = 15V

IC - Amperes

26

25

24

t

d(on)

23

- Nanoseconds

22

21

20

19

18

17

16

15

30

- Nanoseconds

r

t

20

10

0

25 35 45 55 65 75 85 95 105 115 125

I C = 30A

I C = 15A

TJ - Degrees Centigrade

20

19

18

17

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS REF: G_48N60C3D1(5D)01-23-09-B

IXGR48N60C3D1

60

A

50

I

F

40

TVJ=150°C

30

TVJ=100°C

20

TVJ=25°C

10

0

0123

V

F

Fig. 21. Forward current IF versus V

2.0

1.5

K

f

1.0

I

RM

0.5

Q

r

1000

Q

r

nC

800

600

TVJ= 100°C VR = 300V

IF= 60A IF= 30A

= 15A

I

F

I

RM

30

TVJ= 100°C

A

V

25

20

= 300V

R

IF= 60A IF= 30A IF= 15A

15

400

10

200

0

V

100 1000

A/μs

-diF/dt

F

Fig. 22. Reverse recovery charge Q

versus -diF/dt

90

ns

t

rr

TVJ= 100°C VR = 300V

r

80

5

0

200 600 10000 400 800

-di

Fig. 23. Peak reverse current I

versus -diF/dt

20

TVJ= 100°C IF = 30A

V

FR

15

t

fr

V

FR

F

A/μs

/dt

RM

1.00

μs

0.75

t

fr

IF= 60A IF= 30A

10

0.50

IF= 15A

70

5

0.25

0.0 0 40 80 120 160

T

VJ

Fig. 24. Dynamic parameters Qr, I

versus T

VJ

°C

RM

60

200 600 10000 400 800

-di

A/μs

/dt

F

Fig. 25. Recovery time trr versus -diF/dt Fig. 26. Peak forward voltage VFR and

1

K/W

1

0.1

Z

thJC

0.1

- K/W

0.01

thJC

Z

0.01

0.001

0.00001 0.0001 0.001 0.01 0.1 1

0.001

s

t

0.0001 0.001 0.01 0.1 1

Time - Seconds

Fig. 27. Transient thermal resistance junction to case

DSEP 29-06

0

0 200 400 600 800 1000

A/μs

diF/dt

t

versus diF/dt

fr

0.00