Page 1
HiPerFASTTM IGBT
ISOPLUS247
TM
IXGR 40N60C2
IXGR 40N60C2D1
C2-Class High Speed IGBTs
(Electrically Isolated Back Surface)
V
CES
I
C25
V
CE(SAT)
t
fi(typ
= 600 V
=56 A
= 2.7 V
=32ns
Preliminary Data Sheet
ISOPLUS 247
IXGR_C2D1IXGR_C2
Symbol Test Conditions Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C110
I
D110
I
CM
SSOA V
(RBSOA) Clamped inductive load @ V
P
C
T
J
T
JM
T
stg
TJ= 25°C to 150°C 600 V
TJ= 25°C to 150°C; RGE = 1 MΩ 600 V
Continuous ±20 V
Transient ±30 V
TC= 25°C56A
TC= 110°C26A
TC= 110°C (40N60C2D1) 27 A
TC= 25°C, 1 ms 200 A
= 15 V, TVJ = 125°C, RG = 10 Ω ICM = 80 A
GE
≤ 600 V
CE
TC= 25°C 170 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
Maximum Lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
V
ISOL
F
C
50/60 Hz, RMS, t = 1 minute, I
Mounting force 20..120/4.5..25 N/lb.
< 1 mA 2500 V~
ISOL
Weight 4g
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified)
min. typ. max.
(IXGR)
G = Gate C = Collector
E = Emitter
Features
z
DCB Isolated mounting tab
z
Meets TO-247AD package Outline
z
High current handling capability
z
Latest generation HDMOSTM process
z
MOS Gate turn-on
- drive simplicity
Applications
z
Uninterruptible power supplies (UPS)
z
Switched-mode and resonant-mode
power supplies
z
AC motor speed control
z
DC servo and robot drives
z
DC choppers
Advantages
z
Easy assembly
z
High power density
z
Very fast switching speeds for high
frequency applications
TM
G
C
E
ISOLATED TAB
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
© 2005 IXYS All rights reserved
IC= 250μA, VGE = 0 V 600 V
IC= 250 μA, VCE = V
VCE= V
VGE= 0 V 40N60C2/D1 100 μA
CES
VCE= 0 V, VGE = ±20 V ±100 nA
IC= 30 A, VGE = 15 V TJ = 25°C 2.2 2.7 V
GE
3.0 5.0 V
40N60C2 50 μA
TJ = 125°C 2.0 V
DS99052C(10/05)
Page 2
IXGR 40N60C2
IXGR 40N60C2D1
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified)
min. typ. max.
g
C
C
C
Q
Q
Q
t
t
t
t
E
t
t
E
t
t
E
R
R
R
fs
d(on)
ri
d(off)
fi
off
d(on)
ri
on
d(off)
fi
off
ies
oes
res
g
ge
gc
thJ-DCB
thJC
thCS
IC = 30 A; VCE = 10 V, 20 36 S
Pulse test, t ≤ 300 μs, duty cycle ≤ 2 %
2500 pF
VCE = 25 V, VGE = 0 V, f = 1 MHz 40N60C2 180 pF
40N60C2D1 220 pF
54 pF
95 nC
IC = 30 A, VGE = 15 V, VCE = 0.5 V
CES
14 nC
36 nC
18 ns
= 3 Ω
off
°°
°C
°°
20 ns
90 140 ns
32 ns
Inductive load, TJ = 25
IC = 30 A, VGE = 15 V
VCE = 400 V, RG = R
0.20 0.37 mJ
18 ns
Inductive load, TJ = 125
I
= 30 A, VGE = 15 V
C
VCE = 400 V, RG = R
= 3 Ω
off
°°
°C
°°
40N60C2 0.3 mJ
40N60C2D1 0.6 mJ
20 ns
130 n s
80 240 ns
0.50 mJ
(Note 1) 0.26 K/W
(Note 2) 0.74 K/W
0.15 K/W
ISOPLUS 247 Outline
Reverse Diode (FRED) (D1 Version Only) Characteristic Values
(TJ = 25°C unless otherwise specified)
Symbol Test Conditions min. typ. max.
V
F
I
RM
t
rr
t
rr
R
thJC
R
thCS
IF = 30 A, VGE = 0 V, Pulse test TJ =150°C 1.6 V
t ≤ 300 μs, duty cycle d ≤ 2 % TJ = 25°C 2.5 V
IF = 30 A, VGE = 0 V, -diF/dt =100 A/μs, TJ = 100°C4A
VR = 100 V 100 ns
IF = 1 A; -di/dt = 100 A/μs; VR = 30 V 25 ns
1.5 K/W
0.15 K/W
Notes:
1. R
2. R
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
is the thermal resistance junction-to-internal side of DCB substrate
thJ-DCB
is the thermal resistance junction-to-external side of DCB substrate
thJC
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2
Page 3
- Amperes
d
V
V
lt
I
IXGR 40N60C2
IXGR 40N60C2D1
Fig. 1. Output Characteristics
@ 25 Deg. C
60
V
= 1 5V
G E
50
40
30
C
20
1 3V
1 1 V
9V
7V
- Amperes
I
C
Fig. 2. Extended Output Characteristics
@ 25 deg. C
210
18 0
15 0
12 0
90
60
V
= 1 5V
G E
1 3V
1 1 V
9V
7V
10
5V
0
0.511.522.533.5
V
- Volts
C E
Fig. 3. Output Characteristics
@ 125 Deg. C
60
50
40
30
- Amperes
C
I
20
10
0
0.5 1 1.5 2 2.5 3
V
= 1 5V
G E
1 3V
1 1 V
VCE - Volts
9V
7V
5V
30
5V
0
0123 45 67
V
- Volts
C E
Fig. 4. T emperature Dependence of V
1. 3
1. 2
1. 1
V
= 1 5V
G E
1
- Normalize
0.9
C E (s at)
0.8
V
0.7
0.6
25 50 75 100 125 150
TJ - Degrees Centigrade
I C = 60A
I C = 30A
I C = 1 5A
CE(sat)
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emiiter voltage
4
T
= 25ºC
3.5
3
s
J
o
2.5
-
C E
2
1. 5
1
5 6 7 8 9101112131415
V
- Volts
G E
I C = 60A
30A
1 5 A
© 2005 IXYS All rights reserved
210
18 0
15 0
12 0
90
- Amperes
C
I
60
30
0
45678910
Fig. 6. Input Admittance
TJ = 1 25ºC
º
25
-40
C
º
C
V
G E
- Volts
Page 4
IXGR 40N60C2
F
IXGR 40N60C2D1
Fig. 7. Transconductance
70
60
TJ = -40ºC
25
50
1 25
40
30
- Siemens
f s
g
20
10
0
0306090120150180
1. 6
1. 4
1. 2
1
º
C
º
C
I C - Amperes
Fig. 9. Dependence of E
RG = 3 Ohm s
= 1 0 Ohm s
R
V
V
G
G E
C E
= 1 5V
= 400V
- - - - -
off
on I
c
Fig. 8. Dependence of E
off
on R
1.8
1.6
TJ = 1 25ºC
1.4
V
= 1 5V
V
G E
= 400V
C E
1.2
1
0.8
- milliJoules
off
0.6
E
0.4
0.2
0
246810121416
R G - Ohms
Fig. 10. Dependence of E
1. 6
RG = 3 Ohm s
= 1 0 Ohm s
R
1. 4
1. 2
G
V
= 1 5V
G E
= 400V
V
C E
1
- - - - -
on Temperature
off
G
I C = 60A
I C = 45A
I C = 30A
I C = 1 5A
I C = 60A
0.8
- MilliJoules
off
0.6
E
0.4
0.2
0
10 20 30 40 50 60
TJ = 1 25ºC
TJ = 25ºC
I C - Amperes
Fig. 11. Gate Charge
15
V
= 300V
C E
= 30A
I
12
- Volts
G E
V
C
I
= 1 0mA
G
9
6
3
0.8
- milliJoules
0.6
off
E
0.4
0.2
0
25 50 75 100 125
TJ - Degrees Centigrade
Fig. 12. Capacitance
10 0 0 0
f = 1 MHz
10 0 0
10 0
Capacitance - p
I C = 45A
I C = 30A
I C = 1 5A
C
ies
C
oes
C
res
0
0 20406080100
IXYS reserves the right to change limits, test conditions, and dimensions.
Q G - nanoCoulombs
10
0 5 10 15 20 25 30 35 40
V
- Volts
C E
Page 5
IXGR 40N60C2
IXGR 40N60C2D1
Fig. 13. Maximum Transient Thermal Resistance
0.8
0.7
0.6
0.5
(ºC/W)
-
0.4
(th) J C
0.3
R
0.2
0.1
0
110100 1000
Pulse Width - milliseconds
© 2005 IXYS All rights reserved
Page 6
IXGR 40N60C2
IXGR 40N60C2D1
60
A
50
I
F
40
TVJ=150°C
30
TVJ=100°C
20
TVJ=25°C
10
0
0123
V
V
F
Fig. 14. Forward current IF versus V
2.0
1.5
K
f
1.0
0.5
I
RM
Q
r
I
RMQ
30
A
25
20
TVJ= 100°C
VR = 300V
IF= 60A
I
F
IF= 15A
= 30A
1000
nC
800
r
TVJ= 100°C
= 300V
V
R
IF= 60A
IF= 30A
= 15A
I
F
600
15
400
10
200
0
100 1000
A/μs
-diF/dt
F
Fig. 15. Reverse recovery charge Q
versus -diF/dt
90
TVJ= 100°C
r
VR = 300V
ns
t
rr
80
5
0
200 600 10000 400 800
/dt
-di
Fig. 16. Peak reverse current I
F
versus -diF/dt
20
TVJ= 100°C
IF = 30A
V
V
FR
15
t
fr
V
FR
A/μs
RM
1.00
μs
t
fr
0.75
IF= 60A
IF= 30A
IF= 15A
10
0.50
70
5
0.25
0.0
0 40 80 120 160
°C
T
VJ
Fig. 17. Dynamic parameters Qr, I
versus T
VJ
RM
60
200 600 10000 400 800
-di
A/μs
/dt
F
Fig. 18. Recovery time trr versus -diF/dt Fig. 19. Peak forward voltage VFR and
1
K/W
1
0.1
Z
thJC
0.1
- K/W
thJC
Z
0.01
0.01
0.001
0.00001 0.0001 0.001 0.01 0.1 1
0.001
0.0001 0.001 0.01 0.1 1
s
t
Time - Seconds
Fig. 20. Transient thermal resistance junction to case
IXYS reserves the right to change limits, test conditions, and dimensions.
DSEP 29-06
0
0 200 400 600 800 1000
A/μs
diF/dt
t
versus diF/dt
fr
0.00
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