Page 1
Advance Technical Information
HiPerFASTTM IGBT
IXGR 32N90B2D1
with Fast Diode
Electrically Isolated Base
Symbol Test Conditions Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C110
I
CM
SSOA V
(RBSOA) Clamped inductive load: VCL < 600V
P
C
T
J
T
JM
T
stg
Maximum lead temperature for soldering 300
1.6 mm (0.062 in.) from case for 10 s
V
ISOL
F
C
Weight 5g
TJ= 25OC to 150OC 900 V
TJ= 25OC to 150OC; RGE = 1 MΩ 900 V
Continuous ±20 V
Transient ±30 V
TC= 25OC47A
TC= 110OC22A
TC= 25OC, 1 ms 200 A
= 15 V, TVJ = 125OC, RG = 10 Ω ICM = 64 A
GE
TC= 25OC 160 W
-55 ... +150
150
-55 ... +150
50/60Hz, RMS, T= I minute 2500 V~
I
< 1mA 3000 V~
isol
Mounting force 20..120/4.5..26 N/lb
ISOPLUS247 (IXGR)
E153432
G = Gate C = Collector
E = Emitter
Features
y Electrically isolated mounting tab
O
y High frequency IGBT
C
y High current handling capability
O
C
y MOS Gate turn-on
O
C
O
C
Applications
y PFC circuits
y Uninterruptible power supplies (UPS)
y Switched-mode and resonant-mode
y AC motor speed control
y DC servo and robot drives
y DC choppers
V
CES
I
C25
V
CE(sat)
t
fi typ
G
C
E
- drive simplicity
power supplies
= 900 V
= 47 A
= 2.9 V
= 150 ns
ISOLATED TAB
Symbol Test Conditions Characteristic Values
(TJ = 25OC unless otherwise specified)
min. typ. max.
V
GE(th)
I
CES
I
GES
V
CE(sat)
© 2005 IXYS All rights reserved
IC = 250 μA, VCE = V
VCE= V
VGE= 0 V TJ = 150OC 1.5 mA
VCE= 0 V, VGE = ± 20 V ±100 nA
IC = IT, VGE = 15 V, Note 1 2.9 V
CES
GE
TJ = 125OC 2.1 V
3.0 5.0 V
300 μA
Advantages
y High power density
y Very fast switching speeds for high
frequency applications
DS99457(12/05)
Page 2
IXGR 32N90B2D1
Symbol Test Conditions Characteristic Values
(T
= 25OC unless otherwise specified)
g
C
C
C
Q
Q
Q
t
t
t
t
E
t
t
E
t
t
E
R
R
fs
ies
oes
res
g
ge
gc
d(on)
ri
d(off)
fi
off
d(on)
ri
on
d(off)
fi
off
thJC
thCS
J
IC= IT; VCE = 10 V, 18 28 S
VCE = 25 V, VGE = 0 V, f = 1 MHz 146 pF
IC = IT , VGE = 15 V, VCE = 0.5 V
CES
Inductive load, TJ = 25OC
IC = IT , VGE = 15 V
V
= 720 V, RG = R
CE
= 5 Ω
off
Inductive load, TJ = 125OC
I
= IT , VGE = 15 V
C
VCE = 720 V, RG = R
= 5 Ω
off
min. typ. max.
1790 pF
49 pF
89 nC
15 nC
34 nC
20 ns
22 ns
260 400 ns
150 ns
2.2 4.5 mJ
20 ns
22 ns
3.8 mJ
360 ns
330 ns
5.75 mJ
0.8 K/W
0.15 K/W
ISOPLUS247 Outline
1- GATE
2 - COLLECTOR / CATHODE
3 - EMITTER / ANODE
4 - NO CONNECTION
Ultrafast Diode
Symbol Conditions Maximum Ratings
I
FRMS
I
F110
TC = 110OC22A
60 A
Symbol Conditions Characteristic Values
min. typ. max.
V
F
I
RM
t
rr
R
thJC
R
thCS
IF = 30 A 2.75 V
TVJ = 125OC 1.8 V
IF = 50 A; diF/dt = -100 A/μs; TVJ = 100OC 5.5 11.4 A
VR = 100 V; VGE = 0 V 190 ns
1.1 K/W
0.15 K/W
Notes:
1. Pulse test: Pulse width < 300 μs, duty cycle < 2 %;
2. Test current I
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
= 32 A.
T
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2
Page 3
d
IXGR 32N90B2D1
Fig. 1. Output Char acte r istics
@ 25 ºC
70
V
= 15V
GE
60
50
40
30
- Amperes
C
I
20
10
0
00.511.522.533.544.5
13V
11V
V
- Volts
C E
9V
7V
5V
Fig. 3. Output Characteristics
@ 125 ºC
70
V
= 15V
60
50
40
30
- Amperes
C
I
20
10
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
GE
13V
11V
5V
VCE - Volts
9V
7V
Fig. 2. Extended Output Characteristics
@ 25 ºC
240
200
160
120
- Amperes
C
80
I
40
0
0 2 4 6 8 101214161820
V
= 15V
GE
V
- Volts
C E
Fig. 4. Dependence of V
13V
11V
9V
7V
CE(sat)
Tem perature
1.5
VGE = 15V
1.4
1.3
1.2
1.1
- Normalize
1.0
C E (sat)
V
0.9
0.8
0.7
-50 -25 0 25 50 75 100 125 150
T
- Degrees Centigrade
J
IC = 64A
IC = 32A
IC = 16A
on
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter voltage
6
T
5.5
5
4.5
4
- Volts
3.5
C E
V
3
2.5
2
1.5
6 7 8 9 10 11 12 13 14 15 16 17
© 2005 IXYS All rights reserved
IC = 64A
32A
16A
V
G E
- Volts
= 25ºC
J
140
120
100
80
60
- Amperes
C
I
40
20
0
Fig. 6. Input Admittance
T
= 125ºC
J
25
-40
45 678 910
º
C
º
C
V
- Volts
G E
Page 4
IXGR 32N90B2D1
- Siemens
f s
g
10000
Fig. 7. Transconductance
35
30
25
20
15
10
5
0
020406080100
=
T
J
-40ºC
25ºC
12 5ºC
I
- A mperes
C
Fig. 9. Capacitance
f = 1 MHz
C
ies
Fig. 8. Gate Char ge
16
V
= 450V
CE
I
= 32A
C
= 10mA
I
G
8
6
4
2
0
0 102030405060708090100
Q
- nanoCoulombs
G
- Volts
V
14
12
10
G E
Fig. 10. Reve rs e-Bias Safe
Operating Area
70
60
1000
C
oes
100
Capacitance - p F
C
res
10
0 5 10 15 20 25 30 35 40
V
C E
- Volts
Fig. 11. M axim um Transient Therm al Res istance
1
ºC / W
-
0.1
( t h ) J C
R
50
40
- Amperes
30
C
I
20
10
0
TJ = 125ºC
= 10Ω
R
G
dV/dT < 10V/ns
100 200 300 400 500 600 700 800 900
V
- Volts
C E
0.01
0.1 1 10 100 1000
Pulse Width - milliseconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2
Page 5
IXGR 32N90B2D1
Fig. 12. Dependence of Turn-off
Energy Loss on Gate Resistance
18
16
I
14
12
TJ = 125ºC
10
V
= 15V
GE
V
- MilliJoules
8
o f f
6
E
4
2
0
0 5 10 15 20 25 30 35 40 45 50
CE
= 720V
C
IC = 32A
IC = 16A
R G - Ohms
Fig. 14. Dependence of Turn-off
Energy Loss on Collector Current
16
14
12
10
- MilliJoules
o f f
E
RG = 5Ω
V
= 15V
GE
V
= 720V
CE
8
6
4
2
0
10 20 30 40 50 60 70
I
- Amperes
C
TJ = 125ºC
TJ = 25ºC
= 64A
Fig. 13. Dependence of Turn-on
Energy Loss on Gate Resistance
16
14
TJ = 125ºC
12
V
= 15V
GE
10
V
= 720V
CE
8
- MilliJoules
6
o n
E
4
2
0
0 5 10 15 20 25 30 35 40 45 50
I
= 64A
C
IC = 32A
I
= 16A
R G - Ohms
Fig. 15. Dependence of Turn-on
Energy Loss on Collector Current
9
= 5Ω
R
8
7
6
5
4
- MilliJoules
o n
3
E
2
1
0
10 20 30 40 50 60 70
G
V
= 15V
GE
V
= 720V
CE
I
- Amperes
C
TJ = 125ºC
TJ = 25ºC
Fig. 16. Dependence of Turn-off
Energy Loss on Temperature
16
= 5Ω
R
14
12
10
8
V
V
G
GE
CE
= 15V
= 720V
- MilliJoules
6
o f f
E
4
2
0
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
© 2005 IXYS All rights reserved
I
= 64A
C
IC = 32A
IC = 16A
Fig. 17. Dependence of Turn-on
Energy Loss on Temperature
10
RG = 5Ω
9
V
= 15V
GE
V
= 720V
CE
25 35 45 55 65 75 85 95 105 115 125
- MilliJoules
o n
E
8
7
6
5
4
3
2
1
0
I
= 64A
C
IC = 32A
IC = 16A
TJ - Degrees Centigrade
Page 6
IXGR 32N90B2D1
Fig. 18. Dependence of Turn-off
Switching Time on Gate Resistance
550
525
500
d(of f)
T
= 125ºC, VGE = 15V
J
= 720V
V
CE
- - - - -
t
tfi
475
450
Nanoseconds
-
IC = 16A, 32A, 64A
425
400
d ( o f f )
t
IC = 32A, 16A
375
350
468101214161820
R
- Ohms
G
Fig. 20. Dependence of Turn-off
Switching Time
500
450
400
350
300
- Nanoseconds
f i
t
250
/
200
d ( o f f )
t
150
100
15 20 25 30 35 40 45 50 55 60 65
on Collector Current
t
t
d(of f)
R
= 5 Ω, V
G
V
CE
I
- Amperes
C
= 720V
fi
GE
= 15V
400
390
380
370
360
350
340
330
320
- - - - -
TJ = 125ºC
TJ = 25ºC
Fig. 19. Dependence of Turn-on
Switching Time on Gate Resistance
45
t
tri
d(on)
T
40
t
f i
-
Nanoseconds
35
30
Nanoseconds
-
= 125ºC, VGE = 15V
J
= 720V
V
CE
- - - - -
IC = 64A
IC = 32A
25
d ( o n )
t
20
IC = 16A
15
468101214161820
R
- Ohms
G
180
150
120
90
60
30
0
t
r i
-
Nanoseconds
Fig. 21. Dependence of Turn-on
Switching Time
30
28
26
24
22
20
18
- Nanoseconds
16
d ( o n )
14
t
12
10
t
t
d(on)
R
= 5 Ω, V
G
V
= 720V
CE
TJ = 125ºC
10 20 30 40 50 60 70
on Collector Current
- - - -
ri
= 15V
GE
TJ = 25ºC
I
- Amperes
C
10 0
90
80
70
60
50
40
30
20
10
0
t
r i
- Nanoseconds
Fig. 22. Depende nce of Turn-off
Switching Time on Temperature
400
- Nanosec onds
f i
t
/
d ( o f f )
t
350
300
250
200
150
100
IC = 64A, 32A, 16A
IC = 64A, 32A, 16A
t
tfi
d(off)
= 5Ω , VGE = 15V
R
G
= 720V
V
CE
25 35 45 55 65 75 85 95 105 115 125
T
- Degrees Centigrade
J
- - - - -
- Nanoseconds
d ( o n )
t
Fig. 23. Dependence of Turn-on
Switching Time on Temperature
40
t
tri
d(on)
R
35
30
25
= 5 Ω , V
G
V
= 720V
CE
IC = 64A
IC = 32A
20
15
10
25 35 45 55 65 75 85 95 105 115 125
T
- Degrees Centigrade
J
GE
- - - - -
= 15V
IC = 1 6A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2
150
125
100
75
50
25
0
t
r i
- Nanoseconds
Page 7
IXGR 32N90B2D1
70
A
60
TVJ=150°C
I
50
F
TVJ=100°C
TVJ= 25°C
40
30
20
10
0
01234
V
F
Fig. 24. Forward current I
versus V
F
2.0
1.5
K
f
I
1.0
0.5
RM
Q
r
Ultrafast Diode Characteristics
5
TVJ= 100°C
μC
Q
r
= 600V
V
R
4
IF= 60A
= 30A
I
3
F
I
= 15A
F
2
1
0
V
100 1000
A/μs
-diF/dt
Fig. 25. Reverse recovery charge Q
F
versus -diF/dt
220
ns
200
t
rr
180
TVJ= 100°C
VR = 600V
IF= 60A
IF= 30A
IF= 15A
160
140
60
TVJ= 100°C
A
VR = 600V
50
I
RM
40
IF= 60A
IF= 30A
IF= 15A
30
20
10
0
200 600 10000 400 800
Fig. 26. Peak reverse current I
r
versus -diF/dt
120
t
fr
V
V
FR
80
40
A/μs
-di
/dt
F
TVJ= 100°C
IF = 30A
V
FR
RM
1.2
μs
t
fr
0.8
0.4
0.0
0 40 80 120 160
°C
T
VJ
Fig. 27. Dynamic parameters Qr, I
versus T
2
VJ
RM
120
200 600 10000 400 800
-di
A/μs
/dt
F
Fig. 28. Recovery time trr versus
-diF/dt
DSEP 30-12AR
1
K/W
Z
thJC
DSEP 30-12A
0.1
0.01
0.001
0.00001 0.0001 0.001 0.01 0.1 1
s
t
Fig. 30. Transient thermal resistance junction-to-case
© 2005 IXYS All rights reserved
0
0 200 400 600 800 1000
A/μs
diF/dt
Fig. 29. Peak forward voltage V
and t
versus diF/dt
fr
Constants for Z
isolated diode (DSEP 30-12A):
iR
calculation for non-
thJC
(K/W) ti (s)
thi
1 0.465 0.0052
2 0.179 0.0003
3 0.256 0.0397
Constants for Z
isolated diode (DSEP 30-12AR):
iR
calculation for
thJC
(K/W) ti (s)
thi
1 0.368 0.0052
2 0.1417 0.0003
3 0.0295 0.0004
4 0.5604 0.0092
0.0
FR
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