Page 1
Advance Technical Data
HiPerFASTTM IGBT
IXGP 30N60B2
Optimized for 10-25 KHz hard
switching and up to 150 KHz
resonant switching
Symbol Test Conditions Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C110
I
CM
SSOA V
TJ= 25°C to 150°C 600 V
TJ= 25°C to 150°C; RGE = 1 MΩ 600 V
Continuous ±20 V
Transient ±30 V
TC= 25°C (limited by leads) 70 A
TC= 110°C30A
TC= 25°C, 1 ms 150 A
= 15 V, TVJ = 125°C, RG = 10 Ω ICM = 60 A
GE
(RBSOA) Clamped inductive load @ ≤ 600 V
P
C
T
J
T
JM
T
stg
TC= 25°C 190 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
M
d
Mounting torque 1.13/10Nm/lb.in.
Weight 4g
TO-220 (IXSP)
G = Gate, C = Collector,
E = Emitter, TAB = Collector
Features
z
z
z
z
Applications
z
z
z
z
z
z
V
CES
I
C25
V
CE(sat)
t
fi typ
G
= 600 V
= 70 A
< 1.8 V
= 82 ns
C
E
C (TAB)
Medium frequency IGBT
Square RBSOA
High current handling capability
MOS Gate turn-on
- drive simplicity
PFC circuits
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
GE(th)
I
CES
I
GES
V
CE(sat)
© 2004 IXYS All rights reserved
IC= 250 µA, VCE = V
VCE= V
VGE= 0 V TJ = 150°C1mA
CES
GE
TJ = 25°C50µA
2.5 5.0 V
VCE= 0 V, VGE = ±20 V ±100 nA
IC= 24 A, VGE = 15 V TJ = 25°C 1.8 V
DS99167(04/04)
Page 2
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
J
min. typ. max.
IXGP 30N60B2
g
C
C
C
Q
Q
Q
t
t
t
t
E
t
t
E
t
t
E
R
R
fs
ies
oes
res
g
ge
gc
d(on)
ri
d(off)
fi
off
d(on)
ri
on
d(off)
fi
off
thJC
thCH
IC= 24 A; VCE = 10 V, 18 26 S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
1500 pF
VCE = 25 V, VGE = 0 V, f = 1 MHz 115 pF
40 pF
66 nC
IC = 24 A, VGE = 15 V, VCE = 300 V 9 nC
22 nC
13 ns
Inductive load, TJ = 25
IC = 24 A, VGE = 15 V
VCE = 400 V, RG = 5 Ω
°°
°C
°°
15 ns
110 200 n s
82 150 n s
0.32 0.6 mJ
13 ns
Inductive load, TJ = 125
IC = 24 A, VGE = 15 V
VCE = 400 V, RG = 5 Ω
°°
°C
°°
17 ns
0.22 mJ
200 ns
150 ns
0.9 mJ
0.65 K/W
0.25 K/W
Pins: 1 - Gate 2 - Drain
3 - Source 4 - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 6,683,344
Page 3
d
IXGP 30N60B2
Fig. 1. Output Ch aracte r is tics
@ 25 Deg. C
50
45
40
35
30
25
- Amperes
20
C
I
15
10
5
0
0.511.522.53
V
= 15V
GE
13V
11V
V
- Volts
C E
9V
7V
5V
Fig. 3. Output Ch aracte r is tics
@ 125 Deg. C
50
45
40
35
30
25
- Amperes
20
C
I
15
10
5
0
0.5 1 1.5 2 2.5 3
V
= 15V
GE
13V
11V
9V
7V
5V
VCE - Volts
Fig. 2. Extended Output Characte ris tics
@ 25 de g. C
300
250
200
150
- Amperes
C
I
100
50
0
0 2 4 6 8 10 12 14 16 18
V
Fig. 4. Dependence of V
- Volts
C E
V
= 15V
GE
13V
11V
9V
7V
5V
CE(sat)
Tem perature
1.3
1.2
1.1
1.0
- Normalize
0.9
C E (s at)
VGE = 15V
IC = 48A
IC = 24A
V
0.8
IC = 12A
0.7
-50 -25 0 25 50 75 100 125 150
TJ - Degrees Centigrade
on
Fig. 5. Collector -to-Em itte r V oltage
vs. Gate -to-Emitter voltage
4.2
T
= 25ºC
3.9
3.6
3.3
3
2.7
- Volts
C E
2.4
V
2.1
1.8
1.5
1.2
567891011121314151617
© 2004 IXYS All rights reserved
IC = 48A
24A
12A
V
G E
- Volts
J
250
225
200
175
150
125
- Amperes
100
C
I
75
50
25
0
Fig. 6. Input Admittance
TJ = -40ºC
25ºC
125ºC
45678910111213
V
- Volts
G E
Page 4
IXGP 30N60B2
Fig. 7. Transconductance
45
TJ = -40ºC
40
25ºC
35
125ºC
30
25
20
- Siemens
f s
g
15
10
5
0
0 25 50 75 100 125 150 175 200 225 250
I C - Amperes
Fig. 9. Dependence of Turn-Off
En e r g y
2
RG = 5Ω
1.8
1.6
1.4
1.2
1
- MilliJoules
0.8
off
E
0.6
0.4
0.2
0
10 15 20 25 30 35 40 45 50
V
GE
V
CE
= 15V
= 400V
on I
C
TJ = 125ºC
TJ = 25ºC
I C - Amperes
Fig. 8. Dependence of Turn-Off
2.7
En e r g y o n R
2.4
2.1
- milliJoules
E
1.8
1.5
1.2
off
0.9
0.6
0.3
TJ = 125ºC
= 15V
V
GE
= 400V
V
CE
0
0 1020304050607080
G
IC = 48A
IC = 24A
IC = 12A
R G - Ohms
Fig. 10. Dependence of Turn-Off
Energy on Temperature
2
1.8
1.6
1.4
1.2
- milliJoules
0.8
off
E
0.6
0.4
0.2
RG = 5Ω
V
= 15V
GE
V
= 400V
CE
1
0
25 35 45 55 65 75 85 95 105 115 125
IC = 48A
IC = 24A
IC = 12A
TJ - Degrees Centigrade
Fig. 11. Dependence of Turn-Off
Switching Time on R
700
t
d(off)
tfi -
- - - - -
T
= 125ºC
J
= 15V
V
GE
= 400V
V
CE
IC = 24A
IC = 48A
0 1020304050607080
Switching Time - nanos econd
600
500
400
300
200
100
G
R G - Ohms
IC = 12A
260
240
220
200
180
160
140
120
100
Switching Time - nanos econd
Fig. 12. Depende nce of Turn-Off
Switching Tim e
TJ = 125ºC
TJ = 25ºC
80
60
10 15 20 25 30 35 40 45 50
on I
C
t
d(off)
t
fi
R
V
V
- - - - - -
= 5Ω
G
= 15V
GE
= 400V
CE
I C - Amperes
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 6,683,344
Page 5
IXGP 30N60B2
Fig. 13. Dependence of Turn-Off
Switching Time on Temperature
220
t
d(off)
tfi -
- - - - -
R
= 5Ω
G
V
= 15V
GE
= 400V
V
CE
80
25 35 45 55 65 75 85 95 105 115 125
IC = 12A
24A
48A
Switching Time - nanos econd
200
180
160
140
120
100
TJ - Degrees Centigrade
Fig. 15. Capacitance
10000
f = 1 MHz
1000
IC = 48A
24A
12A
C
ies
Fig. 14. Gate Char ge
15
V
= 300V
CE
= 24A
I
12
9
- Volts
6
G E
V
3
0
C
I
= 10mA
G
0 10203040506070
Q G - nanoCoulombs
C
C
oes
res
100
Capacitance - p F
10
0 5 10 15 20 25 30 35 40
V
- Volts
C E
Fig. 16. Maximum Tr ans ie nt The r m al Res is tance
1.0
0.5
(ºC/W)
-
(th) J C
R
0.1
1 10 100 1000
Pulse Width - millisec onds
© 2004 IXYS All rights reserved
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