Datasheet ixgn72n60c3h1 Datasheet

GenX3TM 600V IGBT

IXGN72N60C3H1

with Diode

High-Speed Low-Vsat PT IGBTs 40-100 kHz Switching

Symbol Test Conditions Maximum Ratings

V

I I I

I E

CES

CGR

GES

GEM

C25

C110

CM

A

AS

T

TJ = 25°C to 150°C, RGE = 1MΩ 600 V

SSOA VGE= 15V, TVJ = 125°C, RG = 2Ω ICM = 150 A

(RBSOA) Clamped Inductive Load @ VCE ≤ V

P

C

T

J

T

JM

T

stg

V

ISOL

M

d

Terminal Connection Torque 1.3/11.5 Nm/lb.in.

Weight 30 g

= 25°C to 150°C 600 V

J

Continuous ±20 V

Transient ±30 V

TC= 25°C 78 A TC= 110°C 52 A TC= 25°C, 1ms 360 A

TC = 25°C50A TC= 25°C 500 mJ

CES

TC= 25°C 360 W

-55 ... +150 °C

150 °C

-55 ... +150 °C

50/60Hz t = 1min 2500 V~ I

≤ 1mA t = 1s 3000 V~

ISOL

Mounting Torque 1.5/13 Nm/lb.in.

V

CES

I

C110

V

CE(sat)

t

fi(typ)

= 600V = 52A

≤≤

≤£ 2.50V

≤≤

= 55ns

SOT-227B, miniBLOC

E153432

E c

G

E c

C

G = Gate, C = Collector, E = Emitter c either emitter terminal can be used as

Main or Kelvin Emitter

Features

z

Optimized for Low Switching Losses

z

Square RBSOA

z

Aluminium Nitride Isolation

- High Power Dissipation

z

Isolation Voltage 3000V~

z

Avalanche Rated

z

Anti-Parallel Ultra Fast Diode

z

International Standard Package

Advantages

z

High Power Density

z

Low Gate Drive Requirement

Symbol Test Conditions Characteristic Values (TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

V

GE(th)

I

CES

I

GES

V

CE(sat)

IC = 250μA, VCE = V

V

= V

CE

TJ = 125°C 3 mA

V

CE

I

C

TJ = 125°C 1.65

, V

CES

= 0V, VGE = ±20V ±100 nA

= 50A, VGE = 15V, Note 1 2.10 2.50 V

GE

= 0V 250 μA

GE

3.0 5.5 V

Applications

z

Power Inverters

z

UPS

z

Motor Drives

z

SMPS

z

PFC Circuits

z

Battery Chargers

z

Welding Machines

z

Lamp Ballasts

DS100053A(11/09)

IXGN72N60C3H1

Symbol Test Conditions Characteristic Values (TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

g

fs

C

ies

C

oes

C

res

Q

g

Q

ge

Q

gc

t

d(on)

t

ri

E

on

t

d(off)

t

fi

E

off

t

d(on)

t

ri

E

on

t

d(off)

t

fi

E

off

R

thJC

R

thCS

IC= 50A, VCE = 10V, Note 1 33 55 S

4780 pF

VCE= 25V, VGE = 0V, f = 1MHz 330 pF

117 pF

174 nC

IC= 50A, VGE = 15V, V

= 0.5 • V

CE

CES

33 nC

72 nC

27 ns

Inductive load, TJ = 25

= 50A, VGE = 15V

I

C

1.03 mJ

VCE = 480V, RG = 2Ω, Note 2

°°

°C

°°

37 ns

77 130 ns

55 110 ns

0.48 0.95 mJ

26 ns

Inductive load, TJ = 125

= 50A, VGE = 15V

I

C

VCE = 480V, RG = 2Ω, Note 2

°°

°C

°°

36 ns

1.48 mJ 120 ns 124 ns

0.93 mJ

0.35 °C/W

0.05 °C/W

SOT-227B miniBLOC

M4 screws (4x) supplied

Reverse Diode (FRED)

Symbol Test Conditions Characteristic Values (TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

V

IF = 60A, VGE = 0V, Note 1 1.6 2.0 V

F

I

RM

trr 140 ns

R

thJC

8.3 A

IF = 60A, VGE = 0V, TJ = 100°C

/dt = 200A/μs, VR = 300V

-di

F

TJ = 150°C 1.4 1.8 V

0.42 °C/W

Notes:

1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

2. Switching times & energy losses may increase for higher V

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

(Clamp), TJ or RG.

CE

IXGN72N60C3H1

Fig. 1. Ou tp u t C haracteristics @ TJ = 25ºC

100

V

= 15V

90

80

70

60

50

- Amperes

C

40

I

30

20

10

0

0.0 0. 4 0.8 1. 2 1.6 2.0 2.4 2.8

GE

13V 11V

VCE - Volts

Fig. 3. Ou tp u t C haracteristics @ TJ = 125ºC

100

90

80

70

60

50

- Amperes

40

C

I

30

20

10

0

0.0 0.4 0.8 1.2 1.6 2. 0 2.4

VCE - Volts

V

= 15V

GE

13V 11V

Fig. 2. Extended Output Characteristics @ TJ = 25ºC

350

V

= 15V

GE

300

9V

7V

5V

Amperes

-

C

I

250

200

150

100

50

13V

11V

9V

7V

5V

0

02468101214

VCE - Volts

Fig. 4. Dependence of V

CE(sat)

on

JunctionTemperature

1.3

V

= 15V

1.2

9V

7V

5V

1.1

1.0

0.9

- Normalized

0.8

CE(sat)

V

0.7

0.6

0.5 0 25 50 75 100 125 150

GE

I C = 100A

I C = 50A

I C = 25A

TJ - Degre es Centigrade

Fig. 5. C o l l ecto r -to -Emitter Vo l tag e

5.0

4.5

4.0

3.5

- Volts

CE

3.0

V

2.5

2.0

1.5 6 7 8 9 10 11 12 13 14 15

vs. Gate-to-Emitter Vol tag e

I

= 100A

C

50A 25A

VGE - Volts

TJ = 25ºC

Fig. 6. Input Admittance

100

90

80

70

60

50

Amperes

-

40

C

I

30

20

10

0

4.0 4.5 5.0 5.5 6. 0 6. 5 7.0 7.5 8.0

VGE - Volts

TJ = 125ºC 25ºC

- 40ºC

IXGN72N60C3H1

Fig. 7. Transconductance

90

T

= - 40ºC

80

70

60

50

Siemens

-

40

f s

g

30

20

10

0

0 102030405060708090100

J

25ºC

125ºC

IC - Amperes

Fig. 9. Capacitance

10,000

C

ies

1,000

C

oes

100

C

Capacitance - PicoFarads

= 1 MHz

f

res

Fig. 8. Gate Charge

16

V

= 300V

CE

- Volts

GE

V

14

12

10

= 50A

I

C

I

= 10mA

G

8

6

4

2

0

0 20 40 60 80 100 120 140 160 180

QG - NanoC oulombs

Fig. 10. R ever se-B i as Safe Op er ati n g Area

160

140

120

100

80

- Amperes

C

60

I

40

T

= 125ºC , RG = 2

J

dv / dt < 10V / ns

20

10

0 5 10 15 20 25 30 35 40

VCE - Volts

0

100 200 300 400 500 600

VCE - Volts

Fig. 11. Maximum Transient Ther mal Imp ed ance

1.00

- ºC / W

0.10

(th)JC

Z

0.01

0.0001 0. 001 0.01 0.1 1 10

Pulse W idth - Seco nds

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXGN72N60C3H1

( )

(

)

Fig. 12. Inductive Switching

Energy L o s s vs. Gate Resistan ce

5.0

E

4.5

4.0

3.5

3.0

2.5

- MilliJoules

2.0

off

E

1.5

1.0

0.5

0.0

E

off

TJ = 125ºC , VGE = 15V

= 480V

V

CE

23456789101112131415

on

- - - -

I C = 100A

I C = 50A

RG - Ohms

Fig. 14. Inductive Switching

Energy Loss vs. Junction Temp erature

3.5

VGE = 15V

,

- - - -

on

TJ - Degrees Centigrade

I C = 100A

I C = 50A

E

3.0

2.5

2.0

1.5

- MilliJoules

off

E

1.0

0.5

0.0

E

off

RG = 2

= 480V

V

CE

25 35 45 55 65 75 85 95 105 115 125

6.0

5.5

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

5.6

4.8

4.0

3.2

2.4

1.6

0.8

0.0

Fig. 13. Inductive Switching

Energy L o ss vs. Collecto r C urrent

2.8



,

- - - -

on

VGE = 15V

E

off

2.4 RG = 2

= 480V

V

CE

E

on

- MilliJoules

2.0

1.6

1.2

- MilliJoules

off

TJ = 125ºC, 25ºC

E

0.8

0.4

0.0

20 30 40 50 60 70 80 90 100

IC - Amperes

5.6

4.8

4.0

3.2

2.4

1.6

0.8

0.0

E

on

- MilliJoules

Fig. 15. Inductive Turn-off

Switchin g Times vs. Gate Resistance

190

180

170

- Nanoseconds

f

t

160

150

140

130

120

110

100

90

E

on

- MilliJoules

t

f

TJ = 125ºC, VGE = 15V

V

= 480V

CE

23456789101112131415

t

d(off)

- - - -

I C = 100A

I C = 50A

RG - Ohms

500

450

400

350

300

250

200

150

100

50

0

d off

t

- Nanoseconds

Fig. 16. Inductive Turn-off

Switchin g Times vs. C ollector Current

180

160

140

120

100

80

- Nanoseconds

f

t

60

40

20

20 30 40 50 60 70 80 90 100

t

RG = 2 , VGE = 15V

V

f

= 480V

CE

t

d(off)

- - - -

IC - Amperes

T

= 25ºC

J

TJ = 125ºC

150

140

130

120

110

100

90

80

70

d off

t

- Nanoseconds

Switching Times vs. Junction Temperature

160

t

f

140

RG = 2 , VGE = 15V

= 480V

V

CE

120

Nanoseconds

-

f

t

100

I C = 100A

80

60

40

25 35 45 55 65 75 85 95 105 115 125

Fig. 17. Inductive Turn-off

t

- - - -

d(off)

TJ - Degrees Centigrade

I C = 50A

125

115

105

95

85

75

65

d(off)

t

-

Nanoseconds

IXGN72N60C3H1

( )

(

)

Fig. 18. Inductive Turn-on

Switching Ti mes vs. Gat e R esistance

160

t

r

140

TJ = 125ºC, VGE = 15V

V

= 480V

CE

120

100

80

- Nanoseconds

r

t

60

40

20

23456789101112131415

t

d(on)

- - - -

I C = 100A

I C = 50A

RG - Ohms

Fig. 20. Inductive Turn-on

Switchin g Times vs. Jun cti o n Temperatu r e

120

110

100

Nanoseconds

-

r

t

RG = 2 , VGE = 15V

V

90

80

70

60

50

40

30

20

25 35 45 55 65 75 85 95 105 115 125

r

= 480V

CE

t

d(on)

I C = 100A

I C = 50A

- - - -

TJ - Degre es Centigrade

Fig. 19. Inductive Turn-on

Switching Ti mes vs. Collecto r C urrent

60

55

t

d

50

on

- Nanoseconds

45

40

35

30

25

35

34

33

t

d(on)

32

-

31

Nanoseconds

30

29

28

27

26

25

110

100

t

r

RG = 2 , VGE = 15V

90

V

CE

80

70

60

Nanoseconds

50

-

r

t

40

30

20

10

20 30 40 50 60 70 80 90 100

= 480V

t

- - - -

d(on)

TJ = 25ºC, 125ºC

IC - Amperes

38

36

34

t

d

32

on

30

-

Nanoseconds

28

26

24

22

20

18

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS REF: G_72N60C3(8D)11-25-09-C

IXGN72N60C3H1

Fig. 21

Fig. 24 Fig. 25

1.00

Fig. 22

Fig. 23

ºC / W

0.10

(th)JC

Z

Z(th)JC - [ ºC / W ]

0.01

0.0001 0.001 0.01 0.1 1 10

0.0001 0.001 0. 01 0.1 1 10

Fig. 26 Maximum transien t th er mal imped an ce j u n cti o n to case (for d i o d e)

Fig. 26. Maximum Transient Thermal Impedance

Pulse Width [ms]

Pulse W idth Se conds

[ s ]

IXYS REF: G_72N60C3(8D)11-25-09-C