Datasheet ixgn60n60c2 Datasheet

Advance Technical Data

HiPerFAST

TM

IGBT with Diode

IXGN 60N60C2 IXGN60N60C2D1

C2-Class High Speed IGBTs

E

Symbol Test Conditions Maximum Ratings

V

I

CES

CGR

GES

GEM

C25

C110

CM

TJ= 25°C to 150°C 600 V

TJ= 25°C to 150°C; RGE = 1 MW 600 V

Continuous ±20 V

Transient ±30 V

TC= 25°C (limited by leads) 100 A

TC= 110°C 60 A

TC= 25°C, 1 ms 300 A

SSOA VGE= 15 V, TVJ = 125°C, RG = 10 W ICM = 100 A

(RBSOA) Clamped inductive load @ VCE ≤ 600 V

P

C

T

J

T

JM

T

stg

V

ISOL

M

d

TC= 25°C 480 W

-55 ... +150 °C

50/60 Hz t = 1 min 2500 V~ I

≤ 1 mA t = 1 s 3000 V~

ISOL

Mounting torque 1.15/13 Nm/lb.in. Terminal connection torque (M4) 1.5/13 Nm/lb.in.

Weight 30 g

E

150 °C

D1

V

CES

I

C25

V

CE(sat)

t

fi(typ)

= 600 V = 75 A = 2.5 V = 35 ns

SOT-227B, miniBLOC

E c

G

C

G = Gate, C = Collector, E = Emitter c either emitter terminal can be used as

Main or Kelvin Emitter

Features

z

International standard package miniBLOC

z

Aluminium nitride isolation

- high power dissipation

z

Isolation voltage 3000 V~

z

Very high current IGBT

z

Low V conduction losses

z

MOS Gate turn-on

- drive simplicity

z

Low collector-to-case capacitance (< 50 pF)

z

Low package inductance (< 5 nH)

for minimum on-state

CE(sat)

- easy to drive and to protect

E c

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

Min. Typ. Max.

V

GE(th)

I

CES

I

GES

V

CE(sat)

IC= 250 mA, VCE = V

VCE= V VGE= 0 V TJ = 125°C 5 mA

CES

VCE= 0 V, VGE = ±20 V ±100 nA

IC= 50 A, VGE = 15 V TJ = 25°C 2.1 2.5 V Note 1 TJ = 125°C 1.8 V

GE

TJ = 25°C 650 mA

3.0 5.0 V

Applications

z

AC motor speed control

z

DC servo and robot drives

z

DC choppers

z

Uninterruptible power supplies (UPS)

z

Switch-mode and resonant-mode power supplies

Advantages

z

Easy to mount with 2 screws

z

Space savings

z

High power density

DS990177(06/04)

IXGN 60N60C2

IXGN 60N60C2D1

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

Min. Typ. Max.

g

C

Q

t

E

t t E t t E

R R

fs

ies

oes

res

g

ge

gc

d(on)

ri

d(off)

fi

off

d(on)

ri

on

d(off)

fi

off

thJC

thCK

IC= 50 A; VCE = 10 V, 40 58 S Note 1

3900 pF

VCE= 25 V, VGE = 0 V, f = 1 MHz 280 pF

97 pF

146 nC

IC = 50 A, VGE = 15 V, VCE = 0.5 V

CES

28 nC

50 nC

18 ns

Inductive load, TJ = 25°C

I

= 50 A, VGE = 15 V

C

VCE = 400 V, RG = R

= 2.0 Ω

off

25 ns

95 150 ns

35 ns

0.48 0.8 mJ

18 ns

Inductive load, TJ = 125°C

IC = 50 A, VGE = 15 V

= 400 V, RG = R

V

CE

= 2.0 Ω

off

25 ns

0.9 mJ

130 ns

80 ns

1.2 mJ

0.26 K/W

0.05 K/W

SOT-227B miniBLOC

Reverse Diode (FRED) Characteristic Values

(TJ = 25°C, unless otherwise specified)

Symbol Test Conditions min. typ. max.

V

F

I

RM

t

rr

R

thJC

IF = 60 A, VGE = 0 V, 2.1 V Note 1 TJ = 150°C 1.4

IF = 60 A, VGE = 0 V, -diF/dt = 100 A/µ TJ = 100°C 8.3 A VR = 100 V IF = 1 A; -di/dt = 200 A/ms; VR = 30 V 35 ns

0.85 K/W

Note 1: Pulse test, t ≤ 300 ms, duty cycle ≤ 2 %

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505 of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 6,683,344

IXGK 60N60C2

IXGX 60N60C2D1

Fig. 1. Output Characteristics

@ 25 Deg. C

10 0

V

= 1 5V

90

80

70

60

50

- Amperes

40

C

I

30

20

10

0

0.511.522.533.5

G E

1 3 V 1 1V

9V

7V

5V

VCE - Volts

Fig. 3. Output Characteristics

@ 125 Deg. C

10 0

90

80

70

60

50

40

- Amperes

C

I

30

20

10

0

0.511.522.533.5

V

= 1 5V

G E

1 3 V 1 1V

9V

7V

5V

VCE - Volts

Fig. 2. Extended Output Characteristics

@ 25 deg. C

200

17 5

15 0

12 5

10 0

- Amperes

75

C

I

50

25

0

11.5 22.533.544.5

V

= 1 5V

G E

1 3 V 1 1V

VCE - Volts

9V

7V

Fig. 4. Temperature Dependence of V

1. 2

1. 1 V

= 1 5V

G E

1

0.9

- Nor malized

0.8

C E (s at)

0.7

V

0.6

0.5

25 50 75 100 125 150

TJ - Degrees Centigrade

I C = 1 00A

I C = 50A

I C = 25A

5V

CE(sat)

Fig. 5. Collector-to-Emitter Voltage

vs. Gate-to-Emitter voltage

5

4.5

4

3.5

3

- Volts

CE

2.5

V

2

1. 5

1

5 6 7 8 9101112131415

I C = 1 00A

VGE - Volts

50A

25A

T

J

= 25ºC

Fig. 6. Input Admittance

200

17 5

15 0

12 5

10 0

- Amperes

C

75

I

TJ = 1 25ºC

50

25

0

3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5

25

-40

º

C

º

C

VGE - Volts

IXGN 60N60C2

IXGN 60N60C2D1

Fig. 7. Transconductance

10 0

90

80

70

60

50

- Siemens

40

f s

g

30

20

10

TJ = -40ºC

º

25

1 25

0

0 255075100125150175200

C

º

C

I C - Amperes

5

R G = 2 Ohm s

= 1 0 Ohms - - - - -

R

G

4

V

G E

V

C E

3

Fig. 9. Dependence of E

= 1 5V = 400V

TJ = 1 2 5 ºC

off

on I

Fig. 8. Dependence of E

off

on R

G

6

TJ = 1 25ºC V

= 1 5V

GE

5

V

= 400V

CE

I C = 1 00A

4

I C = 75A

3

- milliJoules

off

2

E

1

I C = 50A

I C = 25A

0

246810121416

R G - Ohms

C

Fig. 10. Dependence of E

5

R G = 2 Ohm s

= 1 0 Ohms - - - - -

R

G

4

V

= 1 5 V

G E

= 400V

V

C E

3

on Temperature

off

I C = 1 0 0A

I C = 75A

- MilliJoules

2

off

E

1

0

20 30 40 50 60 70 80 90 100

TJ = 25 ºC

I C - Amperes

Fig. 11. Gate Charge

15

V

= 300V

C E

= 50A

I

12

- Volts

G E

V

C

= 1 0mA

I

G

9

6

3

0

0 20406080100120140160

Q G - nanoCoulombs

- milliJoules

2

off

E

1

0

25 50 75 100 125

TJ - Degrees Centigrade

Fig. 12. Capacitance

10 0 0 0

10 0 0

10 0

Capacitance - pF

10

f = 1 MHz

C

0 5 10 15 20 25 30 35 40

VCE - Volts

I C = 50A

I C = 25A

ies

C

oes

C

res

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505 of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 6,683,344

160

A

140

4000

nC

TVJ= 100°C V

= 300V

R

80

A

IXGN 60N60C2

IXGN 60N60C2D1

TVJ= 100°C VR = 300V

120

I

F

TVJ= 25°C

100

TVJ=100°C

80

TVJ=150°C

60

40

20

0

012

V

F

Fig. 12 Forward current IF versus V

2.0

1.5

K

f

1.0

I

RM

0.5

Q

r

0.0 0 40 80 120 160

°C

T

VJ

Fig. 15 Dynamic parameters Qr, I

Z

versus T

1

K/W

0.1

thJC

0.01

VJ

3000

Q

r

2000

IF=120A

= 60A

I

F

I

= 30A

F

1000

0

V

100 1000

A/µs

-diF/dt

F

Fig. 13 Reverse recovery charge Q

versus -diF/dt

140

ns

TVJ= 100°C VR = 300V

r

130

t

rr

120

IF=120A

60

I

RM

40

IF=120A I

= 60A

F

= 30A

I

F

20

0

-di

F

A/µs

/dt

200 600 10000 400 800

Fig. 14 Peak reverse current I

versus -diF/dt

20

V

FR

15

t

fr

V

FR

RM

1.6

µs

t

fr

1.2

IF= 60A

110

IF= 30A

10

0.8

100

90

5

TVJ= 100°C

0.4

IF = 60A

80

200 600 10000 400 800

RM

Fig. 16 Recovery time trr versus -diF/dt Fig. 17 Peak forward voltage VFR and

-di

A/µs

/dt

F

0

0 200 400 600 800 1000

diF/dt

t

fr

Constants for Z

versus diF/dt

calculation:

thJC

iR

(K/W) ti (s)

thi

A/µs

0.0

1 0.3073 0.0055 2 0.3533 0.0092 3 0.0887 0.0007 4 0.1008 0.0399

0.001

0.0001

0.00001 0.0001 0.001 0.01 0.1 1

Fig. 18 Transient thermal resistance junction to case

DSEP 2x61-06A

s

t