Datasheet IXGN 50N60BD2, IXGN 50N60BD3 Datasheet (IXYS)

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HiPerFASTTM IGBT with HiPerFRED

Buck & boost configurations

Symbol Test Conditions Maximum Ratings

V

CES

V

CGR

V

GES

V

GEM

I

C25

IGBT

I

C90

I

CM

SSOA VGE= 15 V, TVJ = 125°C, RG = 10 W ICM = 100 A (RBSOA) Clamped inductive load, L = 30 mH @ 0.8 V

P

C

V

RRM

I

FAVM

I

Diode

FRM

P

D

T

J

T

JM

T

stg

M

d

Case

Weight 30 g

Maximum lead temperature for soldering 300 °C

1.6 mm (0.062 in.) from case for 10 s

TJ = 25°C to 150°C 600 V TJ = 25°C to 150°C; RGE = 1 MW 600 V

Continuous ±20 V Transient ±30 V

TC = 25°C75A TC = 90°C50A TC = 25°C, 1 ms 200 A

TC = 25°C 250 W

TC = 70°C; rectangular, d = 50% 60 A tP z<10 ms; pulse width limited by TJ 600 A TC = 25°C 150 W

Mounting torque 1.5/13 Nm/lb.in. Terminal connection torque (M4) 1.5/13 Nm/lb.in.

IXGN 50N60BD2 IXGN 50N60BD3

...BD2 ...BD3

CES

600 V

-40 ... +150 °C 150 °C

-40 ... +150 °C

V

CES

I

C25

V

CE(sat)

t

fi

= 600 V = 75 A = 2.5 V = 150 ns

SOT-227B, miniBLOC

E 153432

IXGN50N60BD2

1 = Emitter; 2 = Gate 3 = Collector; 4 = Diode cathode

IXGN50N60BD3

1 = Emitter/Diode Cathode; 2 = Gate 3 = Collector; 4 = Diode anode

1

2

3

Features

• International standard package miniBLOC

• Aluminium nitride isolation

- high power dissipation

• Isolation voltage 3000 V~

• Very high current, fast switching IGBT & FRED diode

• MOS Gate turn-on

- drive simplicity

• Low collector-to-case capacitance

• Low package inductance (< 10 nH)

- easy to drive and to protect

• Molding epoxies meet UL 94 V-0 flammability classification

4

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

BV

CES

V

GE(th)

I

CES

I

GES

V

CE(sat)

IXYS reserves the right to change limits, test conditions, and dimensions.

IC= 250 mA, VGE = 0 V 600 V IC= 250 mA, VCE = V

VCE= 0.8 • V VGE= 0 V TJ = 125°C1mA

CES

GE

TJ = 25°C 200 mA

2.5 5 V

VCE= 0 V, VGE = ±20 V ±100 nA IC= I

, VGE = 15 V 2.5 V

C90

Applications

• AC motor speed control

• DC servo and robot drives

• DC choppers

• Buck converters

Advantages

• Easy to mount with 2 screws

• Space savings

• High power density

98502C (8/99)

1 - 5

IXGN 50N60BD2 IXGN 50N60BD3

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

g

C C C

Q Q Q

t t t t E

t t E t t E

R R

fs

ies

oes

res

g

ge

gc

d(on)

ri

d(off)

fi

off

d(on)

ri

on

d(off)

fi

off

thJC

thCK

IC= I Pulse test, t £ 300 ms, duty cycle £ 2 %

; VCE = 10 V, 35 50 S

C90

4100 pF

VCE = 25 V, VGE = 0 V, f = 1 MHz 290 pF

50 pF

110 nC

IC = I

, VGE = 15 V, VCE = 0.5 V

C90

CES

30 nC 35 nC

Inductive load, TJ = 25°C

IC = I

, VGE = 15 V, L = 100 mH,

C90

VCE = 0.8 V

, RG = R

CES

= 2.7 W

off

Remarks: Switching times may increase for VCE (Clamp) > 0.8 • V increased R

G

, higher TJ or

CES

Inductive load, TJ = 125°C

IC = I

, VGE = 15 V, L = 100 mH

C90

V

= 0.8 V

CE

, RG = R

CES

= 2.7 W

off

Remarks: Switching times may increase for VCE (Clamp) > 0.8 • V increased R

G

, higher TJ or

CES

50 ns

50 ns 110 250 ns 150 220 ns

3.0 4.0 mJ 50 ns

60 ns

3.0 mJ

200 ns 250 ns

4.2 mJ

0.50 K/W

0.05 K/W

miniBLOC, SOT-227 B

M4 screws (4x) supplied

Dim. Millimeter Inches

Min. Max. Min. Max.

A 31.50 31.88 1.240 1.255 B 7.80 8.20 0.307 0.323

C 4.09 4.29 0.161 0.169 D 4.09 4.29 0.161 0.169

E 4.09 4.29 0.161 0.169 F 14.91 15.11 0.587 0.595

G 30.12 30.30 1.186 1.193 H 38.00 38.23 1.496 1.505

J 11.68 12.22 0.460 0.481 K 8.92 9.60 0.351 0.378

L 0.76 0.84 0.030 0.033 M 12.60 12.85 0.496 0.506

N 25.15 25.42 0.990 1.001 O 1.98 2.13 0.078 0.084

P 4.95 5.97 0.195 0.235 Q 26.54 26.90 1.045 1.059

R 3.94 4.42 0.155 0.174 S 4.72 4.85 0.186 0.191

T 24.59 25.07 0.968 0.987 U -0.05 0.1 -0.002 0.004

Reverse Diode (FRED) Characteristic Values

= 25°C, unless otherwise specified)

(T

J

Symbol Test Conditions typ. max. I

R

TVJ = 25°C VR= V

RRM

650 uA

TVJ = 150°C 2.5 mA

V

F

I

RM

IF= 60 A, TVJ = 150°C 1.75 V Pulse test, t £ 300 ms, duty cycle d £ 2 % T

IF= I

, VGE = 0 V, -diF/dt = 100 A/ms 8.0 A

C90

= 25°C 2.40 V

VJ

VR= 540 V

t

rr

R

thJC

IF= 1 A, -di/dt = 50 A/ms, VR = 30 V TJ = 25°C35 ns

0.85 K/W

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

2 - 5

IXGN 50N60BD2 IXGN 50N60BD3

100

TJ = 25°C

80

V

= 15V

GE

13V 11V 9V

7V

60

40

- Amperes

C

I

20

5V

0

012345

VCE - Volts

Fig. 1. Saturation Voltage Characteristics

100

TJ = 125°C

80

60

40

- Amperes

C

I

20

VGE = 15V 13V

11V

9V

7V

5V

- Amperes

C

I

- Normalized

CE (sat)

V

200

160

TJ = 25°C

VGE = 15V 13V

11V

9V

120

80

7V

40

5V

0

0246810

VCE - Volts

Fig. 2. Extended Output Characteristics

1.6

1.4

1.2

1.0

0.8

0.6

VGE = 15V

IC = 25A

I

C

= 50A

I

= 100A

C

0

012345

VCE - Volts

Fig. 3. Saturation Voltage Characteristics

100

80

V

= 10V

CE

0.4

25 50 75 100 125 150

TJ - Degrees C

Fig. 4. Temperature Dependence of V

10000

C

iss

f = 1Mhz

CE(sat)

1000

60

40

- Amperes

C

I

T

= 125°C

J

TJ = 25°C

100

Capacitance - pF

20

0

0246810

VGE - Volts

Fig. 5. Saturation Voltage Characteristics

10

0 5 10 15 20 25 30 35 40

VCE-Volts

Fig. 6. Junction Capacitance Curves

C

oss

C

rss

3 - 5

IXGN 50N60BD2 IXGN 50N60BD3

6

TJ = 125°C

RG = 4.7

5



E

4 3

E

- millijoules

2

(ON)

E

1 0

0 20406080100

IC - Amperes

Fig. 7. Dependence of EON and E

20

15

10

- Volts

GE

V

=50A

I

C

V

= 250V

CE

5

OFF

(ON)

(OFF)

on IC.

12

10

8

6

4

2

0

(OFF)

E

- milliJoules

6

TJ = 125°C

5

E

(ON)

I

4

3

E

- millijoules

(ON)

E

(ON)

2

E

(OFF)

1

E

(ON)

0

0 102030405060

RG - Ohms

Fig. 8. Dependence of tfi and E

600

100

10

- Amperes

C

I

1

TJ = 125°C

RG = 5.2 dV/dt < 5V/ns

= 100A

C

IC = 50A

IC =25A



on RG.

OFF

12

10

E

(OFF)

8

- millijoules

6

4

E

(OFF)

2

0

0 50 100 150 200 250 300

Qg - nanocoulombs

Fig. 9. Gate Charge

0.1 0 100 200 300 400 500

VCE - Volts

Fig. 10. Turn-off Safe Operating Area

1

0.1

(K/W)

thJC

Z

0.01

0.001

0.00001 0.0001 0.001 0.01 0.1 1

Pulse Width - Seconds

Fig. 11. Transient Thermal Resistance

4 - 5

IXGN 50N60BD2 IXGN 50N60BD3

160

A

140 120

I

F

TVJ= 25°C

100

TVJ=100°C

80

TVJ=150°C

60 40 20

0

012

V

F

Fig. 12Forward current IF versus V

2.0

1.5

K

f

1.0

I

RM

0.5

Q

r

0.0 0 40 80 120 160

T

VJ

Fig. 15Dynamic parameters Qr, I

versus T

VJ

4000

TVJ= 100°C VR = 300V

nC

3000

Q

r

IF=120A IF= 60A IF= 30A

2000

1000

0

V

100 1000

A/ms

-diF/dt

F

Fig. 13Reverse recovery charge Q

versus -diF/dt

140

ns

TVJ= 100°C VR = 300V

r

130

t

rr

120

IF=120A

80

TVJ= 100°C VR = 300V

A

60

I

RM

IF=120A IF= 60A

40

IF= 30A

20

0

200 600 10000 400 800

-di

Fig. 14Peak reverse current I

versus -diF/dt

20

V

FR

15

t

fr

V

F

FR

A/ms

/dt

RM

4

µs

t

fr

3

IF= 60A

110

IF= 30A

10

2

100

90

5

TVJ= 100°C

1

IF = 60A

80

°C

RM

Fig. 16Recovery time trr versus -diF/dt Fig. 17Peak forward voltage VFR and t

200 600 10000 400 800

-di

A/ms

/dt

F

0

0 200 400 600 800 1000

A/ms

diF/dt

versus diF/dt

0

fr

1

K/W

0.1

Z

thJC

0.01

0.001

0.0001

0.00001 0.0001 0.001 0.01 0.1 1 t

Fig. 18Transient thermal resistance junction to case

DSEP 60-06A

s

Constants for Z

iR

calculation:

thJC

(K/W) ti (s)

thi

1 0.324 0.0052 2 0.125 0.0003 3 0.201 0.0385

5 - 5